Silicon Diffused Power Transistor

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1 GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision receivers. Feaures excepional olerance o base drive and collecor curren load variaions resuling in a very low wors case dissipaion. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V CESM Collecor-emier volage peak value V BE = V - 5 V V CEO Collecor-emier volage (open base) - 8 V I C Collecor curren (DC) - 5 A I CM Collecor curren peak value - 8 A P o Toal power dissipaion T hs 25 C - 45 W V CEsa Collecor-emier sauraion volage I C = 3 A; I B =.75 A - 3. V I Csa Collecor sauraion curren f = 6 khz 3. - A f Fall ime I Csa = 3. A;f = 6 khz 3 45 ns PINNING - SOT99 PIN CONFIGURATION SYMBOL PIN base DESCRIPTION case c 2 collecor 3 emier b case isolaed 2 3 e LIMITING VALUES Limiing values in accordance wih he Absolue Maximum Raing Sysem (IEC 34) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CESM Collecor-emier volage peak value V BE = V - 5 V V CEO Collecor-emier volage (open base) - 8 V I C Collecor curren (DC) - 5 A I CM Collecor curren peak value - 8 A I B Base curren (DC) - 3 A I BM Base curren peak value - 5 A -I BM Reverse base curren peak value - 4 A P o Toal power dissipaion T hs 25 C - 45 W T sg Sorage emperaure C T j Juncion emperaure - 5 C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R h j-hs Juncion o heasink wih heasink compound K/W R h j-a Juncion o ambien in free air 32 - K/W Turn-off curren. July 999 Rev.

2 ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Repeiive peak volage from all hree erminals o exernal R.H. 65 % ; clean and dusfree V heasink C isol Capaciance from T2 o exernal heasink f = MHz pf STATIC CHARACTERISTICS T hs = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collecor cu-off curren 2 V BE = V; V CE = V CESMmax - -. ma I CES V BE = V; V CE = V CESMmax ; ma T j = 25 C BV EBO Emier-base breakdown volage I B = ma V V CEOsus Collecor-emier susaining volage I B = A; I C = ma; V L = 25 mh V CEsa Collecor-emier sauraion volage I C = 3. A; I B =.75 A V V BEsa Base-emier sauraion volage I C = 3. A; I B =.75 A V h FE DC curren gain I C =.5 A; V CE = 5 V - - h FE I C = 3 A; V CE = 5 V DYNAMIC CHARACTERISTICS T hs = 25 C unless oherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Swiching imes (6kHz line deflecion circui) I Csa = 3. A; I B =.6 A; (I B2 = -.5 A) s Turn-off sorage ime µs f Turn-off fall ime 3 45 ns + 5v -2R IC / ma 25 Horizonal 2 Oscilloscope Verical 3-6 Hz R R 6V VCE / V min VCEOsus Fig.. Tes circui for V CEOsus. Fig.2. Oscilloscope display for V CEOsus. 2 Measured wih half sine-wave volage (curve racer). July Rev.

3 IC TRANSISTOR DIODE ICsa hfe VCE = V IB IB 2us 26us IB2 64us VCE Fig.3. Swiching imes waveforms (6 khz)... IC / A Fig.6. High and low DC curren gain. ICsa 9 % hfe IC VCE = 5 V IB s IB % f - IB2.. IC / A Fig.4. Swiching imes definiions. Fig.7. High and low DC curren gain. + 5 v nominal adjus for ICsa VCESAT / V.8 Lc.6 IBend LB T.U.T. Cfb.4 -VBB.2 Fig.5. Swiching imes es circui.. IC / A Fig.8. Typical collecor-emier sauraion volage. July Rev.

4 .2 VBESAT / V..9 IC = 3 A IB / A 4 Fig.9. Typical base-emier sauraion volage PD% Normalised Power Deraing wih heasink compound Ths / C Fig.. Normalised power dissipaion. PD% = P D /P D 25 C s/f/ us ICsa = 3 A Freq = 6 khz.5.5 IB / A 2 Fig.. Typical collecor sorage and fall ime. I C =3 A; T j = 85 C; f = 6kHz... `Zh (K/W) D = D = P D BU456DF/DX E-6 E-5 E-4 E-3 E-2 E- E+ E+ / s Fig.2. Transien hermal impedance. p T D = p/t July Rev.

5 MECHANICAL DATA Dimensions in mm Ne Mass: 5.5 g max max o 2.5 max seaing plane max no inned 5.7 min max.2..4 M.7 max Noes. Refer o mouning insrucions for F-pack envelopes. 2. Epoxy mees UL94 V a /8". Fig.3. SOT99; The seaing plane is elecrically isolaed from all erminals. July Rev.

6 DEFINITIONS Daa shee saus Objecive specificaion This daa shee conains arge or goal specificaions for produc developmen. Preliminary specificaion This daa shee conains preliminary daa; supplemenary daa may be published laer. This daa shee conains final produc specificaions. Limiing values Limiing values are given in accordance wih he Absolue Maximum Raing Sysem (IEC 34). Sress above one or more of he limiing values may cause permanen damage o he device. These are sress raings only and operaion of he device a hese or a any oher condiions above hose given in he Characerisics secions of his specificaion is no implied. Exposure o limiing values for exended periods may affec device reliabiliy. Applicaion informaion Where applicaion informaion is given, i is advisory and does no form par of he specificaion. Philips Elecronics N.V. 999 All righs are reserved. Reproducion in whole or in par is prohibied wihou he prior wrien consen of he copyrigh owner. The informaion presened in his documen does no form par of any quoaion or conrac, i is believed o be accurae and reliable and may be changed wihou noice. No liabiliy will be acceped by he publisher for any consequence of is use. Publicaion hereof does no convey nor imply any license under paen or oher indusrial or inellecual propery righs. LIFE SUPPORT APPLICATIONS These producs are no designed for use in life suppor appliances, devices or sysems where malfuncion of hese producs can be reasonably expeced o resul in personal injury. Philips cusomers using or selling hese producs for use in such applicaions do so a heir own risk and agree o fully indemnify Philips for any damages resuling from such improper use or sale. July Rev.

Silicon Diffused Power Transistor

Silicon Diffused Power Transistor GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision