NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor

Transcription

1 January 997 NS3AN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -3 N-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high cell densiy, MOS echnology. This very high densiy process is especially ailored o minimize on-sae resisance. These devices are paricularly suied for low volage applicaions in noebook compuers, porable phones, PCMCIA cards, and oher baery powered circuis where fas swiching, and low in-line power loss are needed in a very small ouline surface moun package..7a, 3 V, R S(ON) =. V GS =. V R S(ON) =.8 V GS = V. Indusry sandard ouline SOT-3 surface moun package using proprieary SuperSOT TM -3 design for superior hermal and elecrical capabiliies. High densiy cell design for exremely low R S(ON). Excepional on-resisance and maximum C curren capabiliy. Compac indusry sandard SOT-3 surface moun package. G S Absolue Maximum Raings T A = C unless oherwise noed Symbol Parameer NS3AN Unis V SS rain-source Volage 3 V V GSS Gae-Source Volage - Coninuous ± V I Maximum rain Curren - Coninuous (Noe a).7 A - Pulsed P Maximum Power issipaion (Noe a). W (Noe b).6,t STG Operaing and Sorage Temperaure Range - o C THERMAL CHARACTERISTICS R θja Thermal Resisance, Juncion-o-Ambien (Noe a) C/W R θjc Thermal Resisance, Juncion-o-Case (Noe ) 7 C/W 997 Fairchild Semiconducor Corporaion NS3AN Rev.C

2 Elecrical Characerisics (T A = C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis OFF CHARACTERISTICS BV SS rain-source Breakdown Volage V GS = V, I = µa 3 V I SS Zero Gae Volage rain Curren V S = V, V GS = V µa = C µa I GSSF Gae - Body Leakage, Forward V GS = V S = V na I GSSR Gae - Body Leakage, Reverse V GS = - V, V S = V - na ON CHARACTERISTICS (Noe ) V GS(h) Gae Threshold Volage V S = V GS, I = µa.6 V = C... R S(ON) Saic rain-source On-Resisance V GS =. V, I =.7 A.. Ω = C.3 V GS = V, I =.9 A.6.8 I (ON) On-Sae rain Curren V GS =. V, V S = V 6 A g FS Forward Transconducance V S = V, I =.7 A 3. S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = V, V GS = V, 9 pf C oss Oupu Capaciance f =. MHz 3 pf C rss Reverse Transfer Capaciance 8 pf SWITCHING CHARACTERISTICS (Noe ) d(on) Turn - On elay Time V = V, I = A, ns r Turn - On Rise Time V GS = V, R GEN = 6 Ω 3 ns d(off) Turn - Off elay Time 3 ns f Turn - Off Fall Time ns d(on) Turn - On elay Time V = V, I = A, ns r Turn - On Rise Time V GS =. V, R GEN = 6 Ω 3 6 ns d(off) Turn - Off elay Time ns f Turn - Off Fall Time ns Q g Toal Gae Charge V S = V, I =.7 A, 3. nc Q gs Gae-Source Charge V GS = V.8 nc Q gd Gae-rain Charge.7 nc NS3AN Rev.C

3 Elecrical Characerisics (T A = C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Coninuous rain-source iode Forward Curren. A I SM Maximum Pulsed rain-source iode Forward Curren A V S rain-source iode Forward Volage V GS = V, I S =. A (Noe ).8. V Noes:. R θja is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he solder mouning surface of he drain pins. R θjc is guaraneed by design while R θca is deermined by he user's board design. P () = TJ T A = TJ T A = RθJ A() RθJ C+RθCA() I () R S (ON ) TJ Typical R θja using he board layous shown below on."x" FR- PCB in a sill air environmen: a. o C/W when mouned on a. in pad of oz copper. b. 7 o C/W when mouned on a. in pad of oz copper. a b Scale : on leer size paper. Pulse Tes: Pulse Widh < 3µs, uy Cycle <.%. NS3AN Rev.C

4 Typical Elecrical Characerisics I, RAIN-SOURCE CURRENT (A) 8 6 V =V GS RAIN-SOURCE R S(on), NORMALIZE ON-RESISTANCE V = 3.V GS V S, RAIN-SOURCE VOLTAGE (V). 6 8 I, RAIN CURRENT (A) Figure. On-Region Characerisics. Figure. On-Resisance Variaion wih rain Curren and Gae Volage. R S(ON), NORMALIZE RAIN-SOURCE ON-RESISTANCE I =.6A VGS =.V R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V GS =. V T = C J C - C T, JUNCTION TEMPERATURE ( C) J Figure 3. On-Resisance Variaion wih Temperaure.. 3 I, RAIN CURRENT (A) Figure. On-Resisance Variaion wih rain Curren and Temperaure. I, RAIN CURRENT (A) 3 V =.V S T = - C J C C V, GATE TO SOURCE VOLTAGE (V) GS V h, NORMALIZE GATE-SOURCE THRESHOL VOLTAGE V S= V GS I = µa - - 7, JUNCTION TEMPERATURE ( C) Figure. Transfer Characerisics. Figure 6. Gae Threshold Variaion wih Temperaure. NS3AN Rev.C

5 S SS Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE I = µa T, JUNCTION TEMPERATURE ( C) J I, REVERSE RAIN CURRENT (A)... V GS = V T = C J C - C V, BOY IOE FORWAR VOLTAGE (V) S Figure 7. Breakdown Volage Variaion wih Temperaure. Figure 8. Body iode Forward Volage Variaion wih Source Curren and Temperaure. CAPACITANCE (pf) 3 6 f = MHz V GS = V C iss C oss C rss V, GATE-SOURCE VOLTAGE (V) GS 8 6 I =.6A V S = V V V... 3 V, RAIN TO SOURCE VOLTAGE (V) S 6 8 Q g, GATE CHARGE (nc) Figure 9. Capaciance Characerisics. Figure. Gae Charge Characerisics. V IN V R L V OUT d(on) on r 9% d(off) off 9% f V GS R GEN G UT V OUT % 9% % INVERTE S V IN % % % PULSE WITH Figure. Swiching Tes Circui. Figure. Swiching Waveforms. NS3AN Rev.C

6 Typical Elecrical Characerisics (coninued) g, TRANSCONUCTANCE (SIEMENS) FS V =.V S T = - C J C C 6 8 I, RAIN CURRENT (A) I, RAIN CURRENT (A) RS(ON) LIMIT s C ms ms us ms. V GS =.V SINGLE PULSE.3 R θja =See Noeb T A = C V, RAI N-SOURCE VOLTAGE (V) S Figure 3. Transconducance Variaion wih rain Curren and Temperaure. Figure. Maximum Safe Operaing Area. STEAY-STATE POWER ISSIPATION (W).8. b a.."x" FR- Board o T A = C Sill Air...3. oz COPPER MOUNTING PA AREA (in ) I, STEAY-STATE RAIN CURRENT (A).8.6 a. b."x" FR- Board o T A = C Sill Air V =.V GS oz COPPER MOUNTING PA AREA (in ) Figue. SuperSOT TM _ 3 Maximum Seady-Sae Power issipaion versus Copper Mouning Pad Area. Figure 6. Maximum Seady-Sae rain Curren versus Copper Mouning Pad Area. r(), NORMALIZE EFFECTIVE TRANSIENT THERMAL RESISTANCE = Single Pulse R θja () = r() * R θja R θja = See Noe b - T A = P * R θja () uy Cycle, = / , TIME (sec) P(pk) Figure 7. Transien Thermal Response Curve. Noe : Characerizaion performed using he condiions described in noe b. Transien hermal response will change depending on he circui board design. NS3AN Rev.C