1.3 A, 20 V. R DS(ON) = 25 C unless otherwise noted. Symbol Parameter NDS331N Units V DSS. Drain-Source Voltage 20 V V GSS
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1 NSN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These N-Channel logic level enhancemen mode power field effec ransisors are produced using ON Semiconducor's proprieary, high cell densiy, MOS echnology. This very high densiy process is especially ailored o minimize onsae resisance. These devices are paricularly suied for low volage applicaions in noebook compuers, porable phones, PCMCIA cards, and oher baery powered circuis where fas swiching, and low in-line power loss are needed in a very small ouline surface moun package. Absolue Maximum Raings T A = 5 C unless oherwise noed Symbol Parameer NSN Unis V SS rain-source Volage V S Gae-Source Volage - Coninuous 8 V I Maximum rain Curren - Coninuous (Noe a). A - Pulsed P Maximum Power issipaion (Noe a).5 W (Noe b).6,t STG Operaing and Sorage Temperaure Range -55 o 5 C THERMAL CHARACTERISTICS R θja Thermal Resisance, Juncion-o-Ambien (Noe a). A, V. R S(ON) =. =.7 V R S(ON) =.6 =.5 V. Indusry sandard ouline SOT- surface moun package using poprieary SuperSOT TM - design for superior hermal and elecrical capabiliies. High densiy cell design for exremely low R S(ON). Excepional on-resisance and maximum C curren capabiliy. 5 C/W R θjc Thermal Resisance, Juncion-o-Case (Noe ) 75 C/W G S NSN N-Channel Logic Level Enhancemen Mode Field Effec Transisor 7 Semiconducor Componens Indusries, LLC. Sepember-7, Rev. 5 Publicaion Order Number: NSN/
2 ELECTRICAL CHARACTERISTICS (T A = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis OFF CHARACTERISTICS BV SS rain-source Breakdown Volage = V, I = 5 µa V I SS Zero Gae Volage rain Curren V S = 6 V, = V µa =5 C µa I GSSF Gae - Body Leakage, Forward = 8 V, V S = V na I GSSR Gae - Body Leakage, Reverse = -8 V, V S = V - na ON CHARACTERISTICS (Noe ) (h) Gae Threshold Volage V S =, I = 5 µa.5.7 V =5 C..5.8 R S(ON) Saic rain-source On-Resisance =.7 V, I =. A.5. Ω =5 C.. =.5 V, I =.5 A..6 I (ON) On-Sae rain Curren =.7 V, V S = 5 V A =.5 V, V S = 5 V g FS Forward Transconducance V S = 5 V, I =. A,.5 S YNAMIC CHARACTERISTICS C iss Inpu Capaciance V S = V, = V, 6 pf C oss Oupu Capaciance f =. MHz 85 pf C rss Reverse Transfer Capaciance 8 pf SWITCHING CHARACTERISTICS (Noe ) (on) Turn - On elay Time V = 5 V, I = A, 5 ns r Turn - On Rise Time = 5 V, R Gen = 6 Ω 5 ns (off) Turn - Off elay Time ns f Turn - Off Fall Time 5 ns Q g Toal Gae Charge V S = 5 V, I =. A,.5 5 nc Q gs Gae-Source Charge =.5 V. nc Q gd Gae-rain Charge nc NSN N-Channel Logic Level Enhancemen Mode Field Effec Transisor
3 Elecrical Characerisics (T A = 5 C unless oherwise noed) Symbol Parameer Condiions Min Typ Max Unis RAIN-SOURCE IOE CHARACTERISTICS AN MAXIMUM RATINGS I S Maximum Coninuous rain-source iode Forward Curren. A I SM Maximum Pulsed rain-source iode Forward Curren A V S rain-source iode Forward Volage = V, I S =. A (Noe ).8. V Noes:. R θja is he sum of he juncion-o-case and case-o-ambien hermal resisance where he case hermal reference is defined as he solder mouning surface of he drain pins. R θjc is guaraneed by design while R θca is deermined by he user's board design. P () = TA = TA = RθJ A() RθJ C+RθCA() I () R S(ON ) TJ Typical R θja using he board layous shown below on.5"x5" FR- PCB in a sill air environmen: a. 5 o C/W when mouned on a. in pad of oz copper. b. 7 o C/W when mouned on a. in pad of oz copper. a b Scale : on leer size paper. Pulse Tes: Pulse Widh < µs, uy Cycle <.%. NSN N-Channel Logic Level Enhancemen Mode Field Effec Transisor
4 I, RAIN-SOURCE CURRENT (A) R S(ON), NORMALIZE Typical Elecrical Characerisics =.5V..7.5 V, RAIN-SOURCE VOLTAGE (V) S RAIN-SOURCE ON-RESISTANCE I, RAIN CURRENT (A) Figure. On-Region Characerisics. I =.A =.7V T J, JUNCTION TEMPERATURE ( C) Figure. On-Resisance Variaion wih Temperaure. V = 5.V S T = -55 C J 5 C 5 C V, GATE TO SOURCE VOLTAGE (V) GS R S(on), NORMALIZE R S(on), NORMALIZE RAIN-SOURCE ON-RESISTANCE V, NORMALIZE RAIN-SOURCE ON-RESISTANCE h.75 GATE-SOURCE THRESHOL VOLTAGE I, RAIN CURRENT (A) Figure. On-Resisance Variaion wih rain Curren and Gae Volage. =.7 V T = 5 C J 5 C -55 C I, RAIN CURRENT (A) V =.V GS.5.7 Figure. On-Resisance Variaion wih rain Curren and Temperaure. V S= I = 5µA , JUNCTION TEMPERATURE ( C)..5.5 NSN N-Channel Logic Level Enhancemen Mode Field Effec Transisor Figure 5. Transfer Characerisics. Figure 6. Gae Threshold Variaion wih Temperaure.
5 S SS Typical Elecrical Characerisics (coninued) BV, NORMALIZE RAIN-SOURCE BREAKOWN VOLTAGE CAPACITANCE (pf) I = 5µA T, JUNCTION TEMPERATURE ( C) J Figure 7. Breakdown Volage Variaion wih Temperaure. 6 5 f = MHz = V C iss C oss C rss V, RAIN TO SOURCE VOLTAGE (V) S Figure 9. Capaciance Characerisics. V IN V R L V OUT I, REVERSE RAIN CURRENT (A), GATE-SOURCE VOLTAGE (V)... = V T = 5 C J 5 C -55 C V, BOY IOE FORWAR VOLTAGE (V) S Figure 8. Body iode Forward Volage Variaion wih Source Curren and Temperaure. 5 I =.A V S = 5V 5V V 5 Q, GATE CHARGE (nc) g Figure. Gae Charge Characerisics. d(on) on r 9% d(off) off 9% f NSN N-Channel Logic Level Enhancemen Mode Field Effec Transisor R GEN G UT V OUT % 9% % INVERTE S V IN 5% 5% % PULSE WITH Figure. Swiching Tes Circui. Figure. Swiching Waveforms. 5
6 Typical Elecrical Characerisics (coninued) 8 g, TRANSCONUCTANCE (SIEMENS) FS STEAY-STATE POWER ISSIPATION (W) 6 V = 5.V S T = -55 C J 5 C 5 C I, RAIN CURRENT (A) Figure. Transconducance Variaion wih rain Curren and Temperaure b a..5"x5" FR- Board o T A = 5 C Sill Air.... oz COPPER MOUNTING PA AREA (in ) Figue 5. SuperSOT TM _ Maximum Seady-Sae Power issipaion. versus Copper Mouning Pad Area. NORMALIZE THERMAL IMPEANCE, ZθJA.. UTY CYCLE-ESCENING ORER = SINGLE PULSE I, RAIN CURRENT (A) V S, RAIN o SOURCE VOLTAGE (V) Figure. Maximum Safe Operaing Area. I, STEAY-STATE RAIN CURRENT (A). R θja = 7 o C/W CURVE BENT TO T A = 5 o C MEASURE ATA b THIS AREA IS LIMITE BY r S(on) a SINGLE PULSE = MAX RATE μs ms ms ms.5"x5" FR- Board o T A = 5 C Sill Air V =.7V GS.... oz COPPER MOUNTING PA AREA (in ) Figure 6. Maximum Seady-Sae rain Curren versus Copper Mouning Pad. Area NOTES: P M Z θja () = r() x R θja R θja = 7 o C/W Peak = P M x Z θja () + T A uy Cycle, = / NSN N-Channel Logic Level Enhancemen Mode Field Effec Transisor , RECTANGULAR PULSE URATION (sec) Figure 7. Transien Thermal Response Curve. Noe : Thermal characerizaion performed using he condiions described in noe b. response will change depending on he circui board design. 6
7 ON Semiconducor and are rademarks of Semiconducor Componens Indusries, LLC dba ON Semiconducor or is subsidiaries in he Unied Saes and/or oher counries. ON Semiconducor owns he righs o a number of paens, rademarks, copyrighs, rade secres, and oher inellecual propery. A lising of ON Semiconducor s produc/paen coverage may be accessed a /sie/pdf/paen Marking.pdf. ON Semiconducor reserves he righ o make changes wihou furher noice o any producs herein. ON Semiconducor makes no warrany, represenaion or guaranee regarding he suiabiliy of is producs for any paricular purpose, nor does ON Semiconducor assume any liabiliy arising ou of he applicaion or use of any produc or circui, and specifically disclaims any and all liabiliy, including wihou limiaion special, consequenial or incidenal damages. Buyer is responsible for is producs and applicaions using ON Semiconducor producs, including compliance wih all laws, regulaions and safey requiremens or sandards, regardless of any suppor or applicaions informaion provided by ON Semiconducor. Typical parameers which may be provided in ON Semiconducor daa shees and/or specificaions can and do vary in differen applicaions and acual performance may vary over ime. All operaing parameers, including Typicals mus be validaed for each cusomer applicaion by cusomer s echnical expers. ON Semiconducor does no convey any license under is paen righs nor he righs of ohers. ON Semiconducor producs are no designed, inended, or auhorized for use as a criical componen in life suppor sysems or any FA Class medical devices or medical devices wih a same or similar classificaion in a foreign jurisdicion or any devices inended for implanaion in he human body. Should Buyer purchase or use ON Semiconducor producs for any such uninended or unauhorized applicaion, Buyer shall indemnify and hold ON Semiconducor and is officers, employees, subsidiaries, affiliaes, and disribuors harmless agains all claims, coss, damages, and expenses, and reasonable aorney fees arising ou of, direcly or indirecly, any claim of personal injury or deah associaed wih such uninended or unauhorized use, even if such claim alleges ha ON Semiconducor was negligen regarding he design or manufacure of he par. ON Semiconducor is an Equal Opporuniy/Affirmaive Acion Employer. This lieraure is subjec o all applicable copyrigh laws and is no for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Lieraure isribuion Cener for ON Semiconducor 95 E. nd Pkwy, Aurora, Colorado 8 USA Phone: or 8 86 Toll Free USA/Canada Fax: or Toll Free USA/Canada orderli@onsemi.com Semiconducor Componens Indusries, LLC N. American Technical Suppor: Toll Free USA/Canada Europe, Middle Eas and Africa Technical Suppor: Phone: 79 9 Japan Cusomer Focus Cener Phone: ON Semiconducor Websie: Order Lieraure: hp:///orderli For addiional informaion, please conac your local Sales Represenaive
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