TrenchMV TM Power MOSFET
|
|
- Thomasina Benson
- 5 years ago
- Views:
Transcription
1 Preliminary Technical Informaion TrenchMV TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed V DSS = V I D25 = A R DS(on) 7. mω TO-263 (IXTA) Symbol Tes Condiions Maximum Raings V DSS = 25 C o 175 C V V DGR = 25 C o 175 C; R GS = 1 MΩ V M Transien ± 3 V I D25 = 25 C A I LRMS Lead Curren Limi, RMS 75 A I DM = 25 C, pulse widh limied by M 43 A G S TO-2 (IXTP) G D S (TAB) (TAB) I AR = 25 C 25 A E AS = 25 C 5 mj dv/d I S I DM, di/d A/μs, V DD V DSS 3 V/ns 175 C, R G = 5 Ω P D = 25 C 43 W C M 175 C T sg C T L 1.6 mm (.62 in.) from case for 1 s 3 C T SOLD Plasic body for 1 seconds 2 C M d Mouning orque (TO-2) 1.13 / 1 Nm/lb.in. Weigh TO-2 3 g TO g Symbol Tes Condiions Characerisic Values ( = 25 C unless oherwise specified) Min. Typ. Max. BV DSS = V, I D = 25 μa V (h) V DS =, I D = 25 μa V I GSS = ± V, V DS = V ± na I DSS V DS = V DSS 5 μa = V = 15 C 25 μa R DS(on) = 1 V, I D = 25 A, Noes 1, mω G = Gae S = Source D = Drain TAB = Drain Feaures Ulra-low On Resisance Unclamped Inducive Swiching (UIS) raed Low package inducance - easy o drive and o proec 175 C Operaing Temperaure Advanages Easy o moun Space savings High power densiy Applicaions Auomoive - Moor Drives - 42V Power Bus - ABS Sysems DC/DC Converers and Off-line UPS Primary Swich for 24V and 48V Sysems Disribued Power Archiechures and VRMs Elecronic Valve Train Sysems High Curren Swiching Applicaions High Volage Synchronous Recifier 6 IXYS CORPORATION All righs reserved DS99 (11/6)
2 Symbol Tes Condiions Characerisic Values ( = 25 C unless oherwise specified) Min. Typ. Max. TO-263 (IXTA) Ouline g fs V DS = 1 V; I D = A, Noe 1 12 S C iss 6 pf C oss = V, V DS = 25 V, f = 1 MHz 8 pf C rss 135 pf d(on) Resisive Swiching Times 33 ns r = 1 V, V DS =.5 V DSS, I D = 25 A 61 ns d(off) R G = 5 Ω (Exernal) 49 ns f 42 ns Q g(on) 132 nc Q gs = 1 V, V DS =.5 V DSS, I D = 25 A 37 nc Q gd nc R hjc.35 C/W R hch TO-2.5 C/W Source-Drain Diode Symbol Tes Condiions Characerisic Values = 25 C unless oherwise specified) Min. Typ. Max. I S = V A I SM Pulse widh limied by M 43 A V SD I F = 25 A, = V, Noe 1 1. V Pins: 1 - Gae 2 - Drain 3 - Source 4, TAB - Drain Dim. Millimeer Inches Min. Max. Min. Max. A A b b c c D D E E e 2.54 BSC. BSC L L L L L R TO-2 (IXTP) Ouline rr I F = 25 A, -di/d = A/μs ns V R = 5 V, = V Noes: 1. Pulse es, 3 μs, duy cycle d 2 %; 2. On hrough-hole packages, R DS(on) Kelvin es conac locaion mus be 5 mm or less from he package body. Pins: 1 - Gae 2 - Drain 3 - Source 4, TAB - Drain PRELIMINARY TECHNICAL INFORMATION The produc presened herein is under developmen. The Technical Specificaions offered are derived from daa gahered during objecive characerizaions of preliminary engineering los; bu also may ye conain some informaion supplied during a pre-producion design evaluaion. IXYS reserves he righ o change limis, es condiions, and dimensions wihou noice. IXYS reserves he righ o change limis, es condiions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,49,961 5,237,481 6,162,6 6,4, B1 6,683,344 6,727,585 7,5,734 B2 one or moreof he following U.S. paens: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,5 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583, 6,71,463 6,771,478 B2 7,71,537
3 Fig. 1. Oupu 25ºC 5V = 1V 9V 8V 7V 6V Fig. 2. Exended Oupu 25ºC = 1V 9V 8V 7V 6V Fig. 3. Oupu 15ºC = 1V 8V 7V 6V RDS(on) - Normalized Fig. 4. R DS(on) Normalized o I D = A Value vs. Juncion Temperaure = 1V I D = A I D = A 5V Degrees Cenigrade RDS(on) - Normalized Fig. 5. R DS(on) Normalized o I D = A Value vs. Drain Curren = 1V 15V = 175ºC = 25ºC Fig. 6. Drain Curren vs. Case Temperaure Exernal Lead Curren Limi for TO-263 (7-Lead) Exernal Lead Curren Limi for TO-3P, TO-2, & TO Degrees Cenigrade 6 IXYS CORPORATION All righs reserved
4 Fig. 7. Inpu Admiance Fig. 8. Transconducance 1 = - ºC 25ºC g f s - Siemens 15ºC = 15ºC 25ºC - ºC Vols 1 2 Fig. 9. Forward Volage Drop of Inrinsic Diode Fig. 1. Gae Charge V DS = 5V 25 8 I G = 1mA IS - Amperes 15 = 15ºC VGS - Vols = 25ºC V SD - Vols Q G - NanoCoulombs Fig. 11. Capaciance Fig. 12. Maximum Transien Thermal Impedance 1, 1. Capaciance - PicoFarads 1, f = 1 MHz Ciss Coss Z(h)JC - ºC / W.1 Crss Pulse Widh - Seconds IXYS reserves he righ o change limis, es condiions, and dimensions.
5 Fig. 13. Resisive Turn-on Rise Time vs. Juncion Temperaure Fig. 14. Resisive Turn-on Rise Time vs. Drain Curren 9 7 R G = 5Ω = 1V = 25ºC r I D = 5A V DS = 5V r R G = 5Ω = 1V V DS = 5V = 125ºC Degrees Cenigrade Fig. 15. Resisive Turn-on Swiching Times vs. Gae Resisance Fig. 16. Resisive Turn-off Swiching Times vs. Juncion Temperaure r d(on) = 125ºC, = 1V 85 f d(off) R G = 5Ω, = 1V r V DS = 5V I D = 5A 5 45 d ( o n ) f I D = 5A V DS = 5V d ( o f f ) I D = 5A R G - Ohms Degrees Cenigrade Fig. 17. Resisive Turn-off Swiching Times vs. Drain Curren Fig. 18. Resisive Turn-off Swiching Times vs. Gae Resisance f = 125ºC = 25ºC = 125ºC f d(off) R G = 5Ω, = 1V V DS = 5V d ( o f f ) f f d(off) = 125ºC, = 1V V DS = 5V I D = 5A d ( o f f ) = 25ºC IXYS CORPORATION All righs reserved R G - Ohms IXYS REF:T_N1T (5V) xls
6 Mouser Elecronics Auhorized Disribuor Click o View Pricing, Invenory, Delivery & Lifecycle Informaion: IXYS:
IXTA96P085T IXTP96P085T IXTH96P085T
TrenchP TM Power MOSFETs P-Channel Enhancemen Mode Avalanche Raed IXTA96P85T IXTP96P85T V DSS = - 85V I D25 = - 96A R DS(on) 13mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Tes Condiions Maximum Raings V DSS
More informationIXFK120N65X2 IXFX120N65X2
X2-Class HiPerFET TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed Fas Inrinsic iode Preliminary Technical Informaion IXFK2N65X2 IXFX2N65X2 V SS = 6 I 25 = 2A R S(on) 24m TO-264 (IXFK) Symbol Tes
More informationTrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information V DSS = 55 V I D25 = A R DS(on) 8.8 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS = 25 C to 175
More informationIXGH48N60C3D1. GenX3 TM 600V IGBT with Diode V CES = 600V I C110. = 48A V CE(sat) 2.5V t fi(typ) = 38ns. High speed PT IGBT for kHz Switching
GenX3 TM 6V IGBT wih Diode High speed PT IGBT for 4-1kHz Swiching IXGH48N6C3D1 V CES = 6V 11 = 48A V CE(sa) 2.V fi(yp) = 38ns TO-247 Symbol Tes Condiions Maximum Raings V CES = C o C 6 V V CGR = C o C,
More informationTrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information IXTA182N55T IXTP182N55T V DSS = 55 V I D25 = 182 A R DS(on) 5. m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings
More informationTrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information IXTPN7T IXTYN7T S = 7 V I D = A R DS(on) 9. mω N-Channel Enhancement Mode Avalanche Rated TO-22 (IXTP) G D S D (TAB) Symbol Test Conditions Maximum
More informationTrenchT2 TM Power MOSFET
Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated V DSS I D25 R DS(on) TO-263 (IXTA) = V = A 7mΩ Symbol Test Conditions Maximum Ratings V DSS T J = 25
More informationIXTA180N10T IXTP180N10T
Trench TM Power MOSFET IXTA8NT IXTP8NT V DSS I D25 R DS(on) = V = 8A 6.4m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings V DSS = 25 C to 75 C V V DGR
More informationTrenchT2 TM Power MOSFET
Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N4T2-7 V DSS = V I D = 3A 2.5mΩ R DS(on) TO-263 (7-lead) Symbol Test Conditions Maximum Ratings
More informationIXFH400N075T2 IXFT400N075T2
Advance Technical Information TrenchT2 TM HiperFET TM Power MOSFET IXFH4N75T2 IXFT4N75T2 V DSS I D25 R DS(on) = 75V = 4A 2.3mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH)
More informationIXTT440N04T4HV V DSS
Advance Technical Information TrenchT4 TM Power MOSFET IXTT44N4T4HV V DSS = 4V I D25 = 44A R DS(on).25m N-Channel Enhancement Mode Avalanche Rated TO-268HV Symbol Test Conditions Maximum Ratings V DSS
More informationIXTA50N25T IXTQ50N25T
Trench Gate Power MOSFET N-Channel Enhancement Mode IXTANT IXTQNT IXTPNT IXTHNT V DSS = V I D = A R DS(on) 6mΩ TO-3 AA (IXTA) TO-2AB (IXTP) TO-3P (IXTQ) G S G D S G D S Symbol Test Conditions Maximum Ratings
More informationIXTY4N65X2 IXTA4N65X2 IXTP4N65X2
Preliminary Technical Information X-Class Power MOSFET IXTYNX IXTANX IXTPNX S I D R DS(on) = V = A m N-Channel Enhancement Mode TO- (IXTY) G S Symbol Test Conditions Maximum Ratings S = C to C V V DGR
More informationIXTY18P10T IXTA18P10T IXTP18P10T
TrenchP TM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY18P1T IXTA18P1T IXTP18P1T V DSS = - 1V I D = - 18A R DS(on) 12m TO52 (IXTY) G S Symbol Test Conditions Maximum Ratings V DSS = C to
More informationIXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T
Trench TM Power MOSFET N-Channel Enhancement Mode IXTA76N25T IXTP76N25T IXTQ76N25T IXTH76N25T V DSS = 2V I D25 = 76A R DS(on) 44m Typical Avalanched BV = V TO-3 AA (IXTA) TO-2AB (IXTP) TO-3P (IXTQ) G S
More informationIXTA24N65X2 IXTP24N65X2 IXTH24N65X2
Preliminary Technical Information X2-Class Power MOSFET S I D25 R DS(on) = 65V = A 15m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 65 V V DGR = 25
More informationTrench Gate Power MOSFET
Preliminary Technical Information Trench ate Power MOSFET N-Channel Enhancement Mode IXTI76N25T IXTP76N25T IXTQ76N25T V DSS = 2V I D25 = 76A R DS(on) 39mΩ Typical avalanche BV = V TO-3 (IXTA) TO-7 (IXTH)
More informationPower MOSFET Stage for Boost Converters
UM 33-5N Power MOSFET Sage for Boos Converers Module for Power Facor Correcion 5 = 7 DSS = 5 R DS(on) =. Ω RRM (Diode) DSS Type 5 3 7 3 5 UM 33-5N 5 7 Symbol Condiions Maximum Raings DSS T J = 5 C o 5
More informationIXFH42N60P3. Polar3 TM HiperFET TM Power MOSFET. = 600V = 42A 185m. Preliminary Technical Information. R DS(on)
Polar3 TM HiperFET TM Power MOSFET Preliminary Technical Information V DSS I D2 R DS(on) = V = 42A 8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum
More informationIXFK120N30T IXFX120N30T
GigaMOS TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Advance Technical Information IXFK12N3T IXFX12N3T S = 3V I D25 = 12A R DS(on) 24mΩ t rr 2ns TO-264 (IXFK) Symbol
More informationIXTK5N250 IXTX5N250 = 2500V = 5A < 8.8Ω. High Voltage Power MOSFET w/ Extended FBSOA. Advance Technical Information. R DS(on)
High Voltage Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA Advance Technical Information IXTKN IXTXN S = V I D = A R DS(on)
More informationIXFK360N15T2 IXFX360N15T2
GigaMOS TM TrenchT2 HiperFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK36N15T2 IXFX36N15T2 V DSS = 15V I D25 = 36A R DS(on) 4.m t rr 15ns TO-264 (IXFK) Symbol
More informationIXFN140N30P. Polar TM Power MOSFET HiPerFET TM = 300V = 110A V DSS I D ns. t rr. N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Polar TM Power MOSFET HiPerFET TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S I D25 R DS(on) t rr = 3V = 11A 24mΩ ns Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 3 V V
More informationMMIX1F520N075T2 = 75V = 500A. 1.6m. TrenchT2 TM GigaMOS TM HiperFET TM Power MOSFET. (Electrically Isolated Tab)
TrenchT2 TM GigaMOS TM HiperFET TM Power MOSFET MMIXF52N75T2 V DSS = 75V I D25 = 5A R DS(on).6m (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G S Symbol
More informationIXFR18N90P V DSS. Polar TM HiPerFET TM Power MOSFET = 900V I D25 = 10.5A. R DS(on) 300ns. t rr
Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode S = 9V I D5 =.5A R DS(on) mω 3ns t rr Symbol Test Conditions Maximum Ratings S = 5 C to 15 C 9 V V DGR
More informationIXTN600N04T2. TrenchT2 TM GigaMOS TM Power MOSFET = 40V = 600A. N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TrenchT2 TM GigaMOS TM Power MOSFET IXTN6N4T2 V DSS = 4V I D25 = 6A R DS(on) 1.3mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode minibloc, SOT-227 E153432 Symbol Test Conditions Maximum
More informationIXTH80N65X2 V DSS. X2-Class Power MOSFET = 650V I D25. = 80A 38m. R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 G D S
X2-Class Power MOSFET V DSS = 6V I D25 = A 38m R DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings V DSS = 25 C to 1 C 6 V V DGR = 25 C to 1 C, R GS = 1M 6
More informationIXTH3N150 V DSS. High Voltage Power MOSFET = 1500V I D25 = 3A 7.3. R DS(on) N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode TO-247
High Voltage Power MOSFET S = 5V I D5 = 3A R DS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-7 Symbol Test Conditions Maximum Ratings S = 5 C to 5 C 5 V V DGR = 5 C to 5 C,
More informationAdvance Technical Information IXFN80N60P3 V DSS. High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T J
Advance Technical Information Polar3 TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN8N6P3 S = I D25 = 66A R DS(on) 7mΩ t rr 25ns minibloc E53432 G S Symbol Test Conditions
More informationIXFT100N30X3HV IXFH100N30X3
X3-Class HiPerFET TM Power MOSFET Advance Technical Information IXFTN3X3HV IXFHN3X3 V DSS = 3V I D25 = A R DS(on) 13.5m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXFT) Symbol Test Conditions
More informationIXFR230N20T V DSS. GigaMOS TM Power MOSFET = 200V = 156A. 8.0m t rr. 200ns. (Electrically Isolated Tab)
GigaMOS TM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR23N2T V DSS = 2V I D25 = 156A R DS(on) 8.m t rr 2ns ISOPLUS247 E153432 Symbol Test
More informationIXFA7N100P IXFP7N100P IXFH7N100P
Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7NP IXFP7NP V DSS = V I D = 7A R DS(on).9 TO-3 (IXFA) Symbol Test Conditions Maximum Ratings V
More informationIXFL32N120P. Polar TM HiPerFET TM Power MOSFET V DSS I D25 = 1200V = 24A. 300ns. Preliminary Technical Information. R DS(on) t rr
Preliminary Technical Information Polar TM HiPerFET TM Power MOSFET ( Electrically Isolated Tab) V DSS I D25 R DS(on) t rr = V = 2A 3mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
More informationIXFK78N50P3 IXFX78N50P3
Preliminary Technical Information Polar3 TM HiPerFET TM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK78N5P3 IXFX78N5P3 S = I D25 = 78A R DS(on) 68m t rr 25ns TO-264
More informationIXTN200N10L2 V DSS = 100V = 178A. Linear L2 TM Power MOSFET w/ Extended FBSOA. Advance Technical Information
Advance Technical Information Linear L2 TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated IXTN2N1L2 S = V I D25 = 178A R DS(on) 11mΩ minibloc, SOT-227 E153432
More informationNDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
April 996 NP45L / NB45L N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These logic level N-Channel enhancemen mode power field effec ransisors are produced using
More informationV DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2
3V Dual PChannel MOSFET General Descripion The AO483 uses advanced rench echnology o provide excellen R DS(ON) wih low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More informationIXFN56N90P. = 900V = 56A 145m 300ns. Polar TM HiPerFET TM Power MOSFET V DSS I D25. R DS(on) t rr
Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S I D25 R DS(on) t rr = 9V = 56A 145m ns Symbol Test Conditions Maximum Ratings S = 25 C to 1 C 9 V
More informationIXTH30N60L2 IXTQ30N60L2 IXTT30N60L2
Preliminary Technical Information Linear L2 TM Power MOSFET with extended FBSOA IXTH3NL2 IXTQ3NL2 IXTT3NL2 S I D25 R DS(on) = V = 3A mω N-Channel Enhancement Mode Avalanche rated TO-7 Symbol Test Conditions
More informationTop View. Top View S2 G2 S1 G1
AO49 3V Complemenary MOSFET General Descripion AO49 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. This complemenary N and P channel MOSFET configuraion is ideal for low
More informationAO V Complementary Enhancement Mode Field Effect Transistor
AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used
More informationTop View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.
V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion
More informationPolarHT TM HiPerFET Power MOSFET
PoarHT TM HiPerFET Power MOSFET N-Channe Enhancement Mode Fast Intrinsic Diode Avaanche Rated S = V I D25 = 17 A R DS(on) 9. mω t rr 15 ns Symbo Test Conditions Maximum Ratings S = 25 C to 175 C V V DGR
More informationIXTF1N450 = 4500V. High Voltage Power MOSFET = 0.9A 80. R DS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode.
High Voltage Power MOSFET (Electrically Isolated Tab) S = 4500V I D25 = 0.9A 80 R DS(on) N-Channel Enhancement Mode ISOPLUS i4-pak TM Symbol Test Conditions Maximum Ratings S T J = 25 C to 50 C 4500 V
More informationPolarHT TM Power MOSFET
PoarHT TM Power MOSFET N-Channe Enhancement Mode Avaanche Rated S = 6 V I D = A R DS(on) 6. mω Symbo Test Conditions Maximum Ratings TO-3P (IXTQ) S = C to C 6 V V DGR = C to C; R GS = MΩ 6 V Transient
More informationConverter - Brake - Inverter Module (CBI3)
MUBW 35-12 8 Converer - Brake - Inverer Module (CBI3) 21 22 D11 D13 D15 1 2 3 7 D7 1 15 T1 D1 T3 D3 T5 D5 18 2 17 5 19 4 D12 D14 D1 23 14 24 T7 11 1 T2 D2 T4 D4 T D 12 13 See ouline drawing for pin arrangemen
More informationPolarHT TM Power MOSFET
PoarHT TM Power MOSFET = 5 V I D25 = A R DS(on) m Ω N-Channe Enhancement Mode Avaanche Rated Symbo Test Conditions Maximum Ratings TO-264 (IXTK) = 25 C to 75 C V V DGR = 25 C to 75 C; R GS = MΩ V Continuous
More informationIXFK240N25X3 IXFX240N25X3
Preliminary Technical Information X3-Class HiPerFET TM Power MOSFET IXFK24N25X3 IXFX24N25X3 V SS I 25 R S(on) = 25V = 24A 5.m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode TO-264 (IXFK)
More informationS G V DS V GS Pulsed Drain Current B -15 Schottky reverse voltage Continuous Forward Current A F I DM V KA
ON473 2V PChannel MOSFET wih Schoky Diode General Descripion The ON473 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. Schoky diode is provided o faciliae he implemenaion
More informationIXFT170N25X3HV IXFH170N25X3 IXFK170N25X3
Advance Technical Information X3-Class HiPerFET TM Power MOSFET IXFT7N25X3HV IXFH7N25X3 IXFK7N25X3 V SS I 25 R S(on) = 25V = 7A 7.4m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode Symbol
More informationNDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's
More informationIXFA270N06T3 IXFP270N06T3 IXFH270N06T3
TrenchT3 TM HiperFET TM Power MOSFET Advance Technical Information IXFA27N6T3 IXFP27N6T3 IXFH27N6T3 V SS I 25 R S(on) = 6V = 27A 3.1m N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier
More informationNDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 996 NS356P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationCoolMOS 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode
IXKF 4N6SCD1 CoolMOS 1) Power MOSFET wih Series Schoky Diode and Ulra Fas niparallel Diode in High olage ISOPLUS i4-pc S = 6 2 = 41 yp. = 6 mω rr = 7 ISOPLUS i4-pc Preliminary daa 1 D S T D F 1 2 E72873
More informationp h a s e - o u t Dual Power MOSFET Module VMM X2 V DSS = 75 V I D25 = 1560 A R DS(on) = 0.38 mω Phaseleg Configuration
MM 5-75X Dual Power MOSFET Module S = 75 5 = 5 =. mω Phaseleg Configuraion Gae Conrol Pi 9 Power Screw Terminals 9 MOSFET T + T Symbol Condiio Maximum Raings S = 5 C o 5 C 75 ± 5 T C = 5 C j 5 T C = C
More informationNDH834P P-Channel Enhancement Mode Field Effect Transistor
May 997 NH834P P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -8 P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationIXFT50N60P3 IXFQ50N60P3 IXFH50N60P3
Polar3 TM HiperFET TM Power MOFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Preliminary Technical Information IXFTNP3 IXFQNP3 V D I D2 R D(on) TO-268 (IXFT) = V = A 4mΩ ymbol
More informationNDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor
January 997 NS3AN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -3 N-Channel logic level enhancemen mode power field effec ransisors are produced using
More informationp h a s e - o u t Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VVZB 135 = 1600 V = 135 A Recommended replacement:
VVZB 5 Three Phase Recifier Bridge wih IGBT and Fas Recovery Diode for Braking Sysem V RRM I dvm = 6 V = 5 V RRM Type + 6 5 4 NTC 9 + V 6 VVZB 5-6 NO 6+7 4+5 + Symbol Condiions Maximum Raings V RRM 6 V
More informationIXFK300N20X3 IXFX300N20X3
Preliminary Technical Information X3-Class HiPerFET TM Power MOSFET IXFK3N2X3 IXFX3N2X3 V SS I 25 R S(on) = 2V = 3A 4m N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Symbol Test Conditions Maximum
More informationIXFT150N30X3HV IXFH150N30X3 IXFK150N30X3
Advance Technical Information X3-Class HiPerFET TM Power MOSFET IXFT5N3X3HV IXFH5N3X3 IXFK5N3X3 V SS I 25 R S(on) = 3V = 5A 8.3m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum
More informationIXFH42N65X2A V DSS = 650V I D25. X2-Class HiPerFET TM Power MOSFET. = 42A 72m. Advance Technical Information. R DS(on) AEC Q101 Qualified
Advance Technical Information X2-Class HiPerFET TM Power MOSFET AEC Q Qualified N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode IXFH42N5X2A V SS = 5V I 25 = 42A 72m R S(on) TO-247 Symbol
More informationConverter - Brake - Inverter Module (CBI2)
Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D1 1 2 3 7 D7 16 1 T1 D1 T3 D3 T D 18 2 6 17 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 1 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase
More informationIXTN660N04T4. TrenchT4 TM Power MOSFET = 40V = 660A. 0.85m. Advance Technical Information
TrenchT4 TM Power MOFET Advance Technical Information IXTN66N4T4 D V D = 4V I D25 = 66A R D(on).85m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G minibloc, OT-227 E53432 ymbol Test
More informationConverter - Brake - Inverter Module (CBI2)
MUBW 5-6 7 Converer - Brake - Inverer Module (CBI2) 2 22 D D3 D5 2 3 7 D7 6 5 T D T3 D3 T5 D5 8 2 6 7 5 9 4 D2 D4 D6 T7 T2 D2 T4 D4 T6 D6 23 4 24 2 3 NTC 8 9 Three Phase Brake Chopper Three Phase Recifier
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor IXBK55N3 IXBX55N3 V CES = 3V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C 3 V
More informationIXTN660N04T4. TrenchT4 TM Power MOSFET = 40V = 660A. 0.85m. Advance Technical Information
TrenchT4 TM Power MOFET Advance Technical Information D V D = 4V I D25 = 66A R D(on).85m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode G minibloc, OT-227 E53432 ymbol Test Conditions
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = 12 I C2 = 16 = 2.2 CE(sa) Boos Chopper + free wheeling Diode Par number MID14-123 Backside: isolaed 1 3 4 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low sauraion
More informationIXBK55N300 IXBX55N300
High Voltage, High Gain BiMOSFET TM Monolithic Bipolar MOS Transistor V CES = V 11 = 55A V CE(sat) 3.2V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C,
More informationConverter - Brake - Inverter Module (CBI2)
Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D15 1 2 3 7 D7 16 15 T1 D1 T3 D3 T5 D5 18 6 17 5 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase
More informationV DS I D (at V GS =-10V) R DS(ON) (at V GS = -4.5V) 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The combines advanced rench MOFET echnology wih a low resisance package o provide exremely low R (ON). This device is ideal for load swich and baery proecion applicaions.
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = 12 I C25 = 16 = 2.2 CE(sa) Buck Chopper + free wheeling Diode Par number MDI145-123 Backside: isolaed 1 7 6 3 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low
More informationIXBH42N170 IXBT42N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor S = V = 42A (sat) 2.8V Symbol Test Conditions Maximum Ratings TO-247 (IXBH) S = 25 C to 1 C V V CGR T J = 25 C to 1 C, R GE = 1MΩ V
More informationp h a s e - o u t Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM X2
GWM 18-4X2 Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 4 V 25 = 18 R DSon yp. = 1.9 mw Preliminary daa G1 G3 G5 L+ S1 G2 S3 G4 S5 G6 L1 L2 L3 Sraigh leads Surface
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = x 1 I C = 9 =. CE(sa) Phase leg Par number MII7-13 1 Backside: isolaed 7 3 Feaures / dvanages: pplicaions: Package: Y NPT IGBT echnology low sauraion volage low swiching losses
More informationV DS. 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The AO4449 uses advanced rench echnology o provide excellen R(ON), and ulralow low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More information500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
More informationIXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T
TrenchP TM Power MOFET P-Channel Enhancement Mode Avalanche Rated IXTT76P1THV IXTA76P1T IXTP76P1T IXTH76P1T ymbol Test Conditions Maximum Ratings V = 25 C to 15 C - 1 V V R = 25 C to 15 C, R = 1M - 1 V
More informationPolarHT TM HiPerFET Power MOSFET
PoarHT TM HiPerFET Power MOSFET N-Channe Enhancement Mode Avaanche Rated Fast Intrinsic Diode = 15 V I D25 = 15 A R DS(on) 11 mω t rr ns Symbo Test Conditions Maximum Ratings = 25 C to 175 C 15 V V DGR
More informationIXTT16N10D2 IXTH16N10D2
epletion Mode MOSFET N-Channel V SX = V I (on) > 16A R S(on) 6m G TO-268 (IXTT) S G S (Tab) Symbol Test Conditions Maximum Ratings V SX = C to 17 C V V GX = C to 17 C, R GS = 1M V X Continuous 2 V M Transient
More informationIXXH75N60C3D1 V CES = 600V I C110. XPT TM 600V IGBT GenX3 TM w/ Diode. = 75A V CE(sat) 2.3V t fi(typ) = 75ns
XPT TM 6V IGBT GenX TM w/ Diode Extreme Light Punch Through IGBT for -6 khz Switching IXXH7N6CD S = 6V = 7A (sat).v t fi(typ) = 7ns Symbol Test Conditions Maximum Ratings S = C to 7 C 6 V V CGR = C to
More informationGenX3 TM 1200V IGBT IXGH50N120C3 V CES = 1200V I C110 = 50A. 4.2V t fi(typ) = 64ns. Preliminary Technical Information
Preliminary Technical Information GenX3 TM 12V IGBT High speed PT IGBTs for 2 - khz switching IXGHN12C3 V CES = 12V 11 = A V CE(sat).2V t fi(typ) = ns Symbol Test Conditions Maximum Ratings V CES = C to
More informationMMIX4B12N300 V CES = 3000V. = 11A V CE(sat) 3.2V. High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Information V CES = 3V 11 = 11A V CE(sat) 3.2V C1 C2 (Electrically Isolated Tab) G1 E1C3 G2 E2C G3 G E3E C1 C2
More informationIXBT24N170 IXBH24N170
High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBT24N17 IXBH24N17 S 11 = 1 = 24A (sat) 2. TO-26 (IXBT) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 17 V V CGR = 25 C
More informationIXYH10N170CV1 V CES = 1700V I C110. High Voltage XPT TM IGBT w/ Diode. = 10A V CE(sat) 3.8V = 70ns. t fi(typ) Advance Technical Information TO-247 AD
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYHN7CV V CES = 7V = A V CE(sat).V = 7ns t fi(typ) Symbol Test Conditions Maximum Ratings V CES = C to 7 C 7 V V CGR = C to 7 C, R GE =
More informationP-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source
More informationXPT IGBT Module MIXA450PF1200TSF. Phase leg + free wheeling Diodes + NTC MIXA450PF1200TSF. Part number
XPT IGBT Module CS 2x 12 I C25 1.8 C(sa) Phase leg + free wheeling Diodes + NTC Par number Backside: isolaed 5 2 1 8 7 9 3 4 /11 Feaures / dvanages: pplicaions: Package: SimBus F High level of inegraion
More informationIXFT60N50P3 IXFQ60N50P3 IXFH60N50P3
Preliminary Technical Information Polar3 TM HiperFET TM Power MOFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT6N5P3 IXFQ6N5P3 IXFH6N5P3 I D25 R D(on) = = 6A m TO-268 (IXFT)
More informationIXYH40N120C3D1 V CES
V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYHNC3D S = V 9 = A (sat).v t fi(typ) = 38ns Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
More informationIXBT20N360HV IXBH20N360HV
High Voltage, High Gain BIMOSFT TM Monolithic Bipolar MOS Transistor Advance Technical Information V CS = V = A V C(sat).V TO-HV (IXBT) Symbol Test Conditions Maximum Ratings V CS = C to C V V CGR = C
More informationIXYK100N120B3 IXYX100N120B3
V XPT TM IGBTs GenX3 TM Extreme Light Punch Through IGBT for 5-3 khz Switching Preliminary Technical Information IXYKNB3 IXYXNB3 S = V 11 = A (sat).v t fi(typ) = ns TO- (IXYK) Symbol Test Conditions Maximum
More informationIXYH82N120C3 V CES = 1200V I C V XPT TM IGBT GenX3 TM. = 82A V CE(sat) 3.2V t fi(typ) = 93ns. High-Speed IGBT for khz Switching
V XPT TM IGBT GenX TM High-Speed IGBT for - khz Switching IXYHNC S = V = A (sat).v t fi(typ) = 9ns Symbol Test Conditions Maximum Ratings S = C to 7 C V V CGR = C to 7 C, R GE = MΩ V V GES Continuous ±
More informationAdvance Technical Information IXFN110N85X V DSS. High Power Density Easy to Mount Space Savings BV DSS. = 3mA 850 V. = 8mA
Advance Technical Information X-Class HiPerFET TM Power MOFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN11N85X V D = 85V I D25 = 11A R D(on) 33m D minibloc, OT-227 E153432 ymbol
More informationIXFT50N60X IXFQ50N60X IXFH50N60X
Preliminary Technical Information X-Class HiPerFET TM Power MOFET IXFT5N6X IXFQ5N6X IXFH5N6X V I 25 R (on) = 6V = 5A 73m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic iode TO-268 (IXFT) G (Tab)
More informationIXGK75N250 IXGX75N250
High Voltage IGBTs For Capacitor Discharge Applications Preliminary Technical Information IXGKN25 IXGXN25 S = 25V 11 = A (sat) 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C
More informationIXYH16N250CV1HV. High Voltage XPT TM IGBT w/ Diode V CES I C110. = 2500V = 16A V CE(sat) 4.0V = 250ns. t fi(typ) Advance Technical Information
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYH1N5CV1HV S 11 = 5V = 1A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5 V V CGR = 5 C to 175 C, R GE
More informationNDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor
February 99 NS9959 ual N-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures These N-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary, high
More informationHiPerFAST TM IGBT with Diode
HiPerFAST TM IGBT with Diode C-Class High Speed IGBTs IXGK 6N6CD IXGX 6N6CD S = 6 V = 7 A (sat) =. V t fi(typ) = ns Symbol Test Conditions Maximum Ratings S = C to C 6 V V CGR = C to C; R GE = MΩ 6 V V
More informationIXGH60N60C3 = 600V I C110. GenX3 TM 600V IGBT V CES. = 60A V CE(sat) 2.5V t fi (typ) = 50ns. High Speed PT IGBT for kHz Switching TO-247 AD
GenX3 TM V IGBT High Speed PT IGBT for -khz Switching IXGHNC3 V CES = V 11 = A V CE(sat) V t fi (typ) = 5ns Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C, R GE = 1MΩ
More informationIXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1
High Voltage IGBT w/ Sonic Diode IXGTN7A IXGHN7A IXGTN7AH IXGHN7AH S = 7V 9 = A (sat).v t fi(typ) = ns H Symbol Test Conditions Maximum Ratings S = C to C 7 V V CGR = C to C, R GE = M 7 V TO- (IXGT) V
More information