CoolMOS 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode
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- Nora Mathews
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1 IXKF 4N6SCD1 CoolMOS 1) Power MOSFET wih Series Schoky Diode and Ulra Fas niparallel Diode in High olage ISOPLUS i4-pc S = 6 2 = 41 yp. = 6 mω rr = 7 ISOPLUS i4-pc Preliminary daa 1 D S T D F 1 2 E MOSFET T Symbol Condiio Maximum Raings S o 1 C 6 ± T C T C = 9 C Symbol Condiio Characerisic alues MOSFET 'T' only: = 1 ; = 2 MOSFET 'T & D S ' in series (pin, pin 2): = 1 ; = 1 = 1 ; = (, unless oherwise specified) min. yp. max (h) = 2 ; = 3 m SS = S ; = = 1 C 1.3 m m I GSS = ± 2 ; = 1 n Q g Q gs Q gd = 1 ; = 3 ; = nc nc nc d(on) r 3 18 d(off) Inducive load f = 1 ; = 38 = 2 ; = 1 Ω.7 mj E rec(off).3.22 mj mj R hjc R hjh wih heasink compound (IXYS es seup)..4.7 Feaures fas CoolMOS 1) power MOSFET 3 rd generaion - high blocking volage - low on resisance - low hermal resisance due o reduced chip hickness Series Schoky diode prevens curren flow hrough MOSFET s body diode - very low forward volage - fas swiching Ulra fas HiPerFRED ani parallel diode - low operaing forward volage - fas and sof reverse recovery - low swiching losses ISOPLUS i4-pc high volage package - isolaed back surface - low coupling capaciy beween pi and heasink - enlarged creepage owards heasink - enlarged creepage bew. high volage pi - applicaion friendly pinou - high reliabiliy - indusry sandard ouline - UL regisered E pplicaio Converers wih circui operaion leading o curren flow hrough swiches in reverse direcion - e. g. - phaseleg wih inducive load - resonan circuis high swiching frequency Examples swiched mode power supplies (SMPS) uninerrupable power supplies (UPS) DC-DC converers welding converers converers for inducive heaing drive converers 1) CoolMOS is a rademark of Infineon Technologies G b 211 IXYS ll righs reserved 1-7
2 IXKF 4N6SCD1 Series Schoky Diode D S Symbol Condiio Maximum Raings 2 9 T C T C = 9 C Symbol Condiio Characerisic alues (, unless oherwise specified) min. yp. max. T = 1 C F = 2 ; T C T C. T r T J for power loss calculaion only R hjc R hjh wih heasink compound (IXYS es seup) Free Wheeling Diode D F Symbol Condiio Maximum Raings 2 9 T C T C = 9 C 4 23 Symbol Condiio Characerisic alues (, unless oherwise specified) yp. max. F = 3 ; T C T C T = 1 C r T for power loss calculaion only I RM = 2 ; di F /d = -4 /µs; rr R = 38 ; GE = R hjc R hjh wih heasink compound (IXYS es seup) Componen Symbol Condiio Maximum Raings T sg operaing sorage ISOL I ISOL = 1 m, /6 Hz, = 1 min 3 ~ F C mouning force wih clip 2-12 N Symbol Condiio Characerisic alues min. yp. max. C P coupling capaciy beween shored pi and mouning ab in he case 4 pf d S, d d S, d D pin - S pin pin - backside meal 7. C C mm mm Weigh 6 g 21121b 211 IXYS ll righs reserved 2-7
3 IXKF 4N6SCD1 ISOPLUS i4-pc Ouline L D R L1 E 1 2 Q W 2 D3 c 1 D1 3x b e1 E1 b4 e D2 3x b2 Dim. Millimeer Inches min max min max b b b c D D D D E E e 3.81 BSC.1 BSC e1 13 BSC.4 BSC L L Q R W Die konvexe Form des Subsraes is yp. <. mmüber der Kusoffoberfläche der Baueilunerseie The convexbow of subsrae is yp. <. mm over plasic surface level ofdevice boom side 21121b 211 IXYS ll righs reserved 3-7
4 IXKF 4N6SCD SS = 1 m 1 8 S Fig. 1 Drain source breakdown volage S vs. juncion emperaure Fig. 2 Typical rafer characerisic = 2/1/8/ = 2/1/8/ Fig. 3 Typical oupu characerisic (beween pin and pin 2) Fig. 4 Typical oupu characerisic (beween pin and pin 2) = 1 = 2 normalized Fig. Drain source on-sae resisance versus juncion emperaure (beween pin and pin 2) [mω] Fig. 6 Drain source on-sae resisance versus (beween pin and pin 2) 21121b 211 IXYS ll righs reserved 4-7 normalized =
5 IXKF 4N6SCD1 24 = f ( ); P = 1 µs, 14 = f ( ); = 1 C P = 1 µs, 4 Fig. 7 Typical oupu characerisic Fig. 8 Typical oupu characerisic = f ( ) = 47, = 1 4 = f ( ) = 1 C, Fig. 9 Drain source on-sae resisance versus juncion emperaure Fig. 1 Drain source on-sae resisance versus 21121b 211 IXYS ll righs reserved - 7
6 IXKF 4N6SCD = 47 pulsed.2 max.8 max 1 8 Schoky Diode Free Wheeling Diode MOSFET Q G [nc] Fig.11 Gae charge characerisic T C Fig. 12 Drain curren vs. case emperaure T C [mj] = 1 Ω = 38 = 1 d(on). E rec boos Fig. 13 Typ. urn-on energy & swiching imes vs. collecor curren, inducive swiching r [] [mj].4.2 = 1 Ω = 38 = 1 d (off) Fig. 14 Typ. urn-off energy & swiching imes vs. collecor curren, inducive swiching f [], E rec [mj] = 2 = 38 = 1 2x E rec boos d(on) Fig. 1 Typ. urn-on energy & swiching imes vs. gae resisor, inducive swiching r [] [mj] = 2 = 38 = d(off) x f 8 [] Fig. 16 Typ. urn-off energy & swiching imes vs. gae resisor, inducive swiching 21121b 211 IXYS ll righs reserved 6-7
7 IXKF 4N6SCD I RM 6 4 = 47 Ω 33 Ω 22 Ω 1 Ω rr =12 C I RM 47 Ω 33 Ω 22 Ω = 2 R = 38 rr [] F di F /d [/µs] Fig. 17 Typ. forward characerisics of reverse diode Fig. 18 Typ. reverse recovery characerisics of aniparallel diode I rr = 1 Ω R = 38 I rr Q rr Q rr [µc] C F Fig. 19 Typ. reverse recovery characerisics Fig. 2 Typ. forward characerisics of diode D S. MOSFET 2. Schoky Diode.4 2. Z hjh.3 Z hjh 1. FWD [].2 [] [ms] Fig. 21 Typ. hermal impedance juncion o heasink Z hjh of he MOSFET wih hea rafer pase [ms] Fig. 22 Typ. hermal impedance juncion o heasink Z hjh of he Diodes wih hea rafer pase 21121b 211 IXYS ll righs reserved 7-7
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GENERAL DESCRIPTION High volage, high speed swiching npn ransisor in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers. Feaures excepional olerance
Six-Pack XPT IGBT MIXA30W1200TED. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TED
MIX3W2TED Six-Pack XPT IGBT CES = 2 2 = 43 CE(sat) =.8 Part name (Marking on product) MIX3W2TED 2, 2, 9 7 NTC 2 23, 24 2, 22 9, 2 E 72873 8 3 7 Pin configuration see outlines. 4 27, 28 8 2 3, 4 Features:
ABSOLUTE MAXIMUM RATINGS (TC=25 ) Item Symbol Unit MBL400E33D. DC IC 400 A 1ms ICp. 800 Forward Current. DC IF 400 A 1ms IFM
IGBT MODULE Spec.No.IGBT-SP-68 R4 P1/7 MBL4E33D Silicon N-channel IGBT FEATURES High hermal faigue durabiliy.(dela Tc=7,N>3,cycles) High speed, low loss IGBT module. Low noise due o buil-in free-wheeling
T1 T3 T5 D1 D3 D5 G1 G3 G5 U V W G2 G4 G6 EU EV EW
MIXW1TMH Six-Pack XPT IGBT S = 1 2 = 28 (sat) = 1.8 Part name (Marking on product) MIXW1TMH P T1 T3 T D1 D3 D NTC1 G1 G3 G U W NTC2 T2 T4 T6 D2 D4 D6 G2 G4 G6 E 72873 Pin configuration see outlines. EU
Smart Highside Power Switch
Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion
Trench Gate Power MOSFET
Preliminary Technical Information Trench ate Power MOSFET N-Channel Enhancement Mode IXTI76N25T IXTP76N25T IXTQ76N25T V DSS = 2V I D25 = 76A R DS(on) 39mΩ Typical avalanche BV = V TO-3 (IXTA) TO-7 (IXTH)
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection
Feaures Logic Level Inpu Inpu Proecion (ESD) Thermal shudown Green produc (RoHS complian) Overload proecion Shor circui proecion Overvolage proecion Curren limiaion nalog driving possible Produc Summary
Six-Pack XPT IGBT MIXA80W1200TEH V CES I C25 = 1200 V. Part name (Marking on product) MIXA80W1200TEH
MIXW1TEH Six-Pack XPT IGBT CES = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIXW1TEH 3, 31, 3 1, 17, 1 1 T1 D1 T3 D3 9 T D 19 NTC 3 T D 7 9 7 T D 1 11 T D 1 3 E773 Pin configuration see outlines.
L1, L2, N1 N2. + Vout. C out. Figure 2.1.1: Flyback converter
page 11 Flyback converer The Flyback converer belongs o he primary swiched converer family, which means here is isolaion beween in and oupu. Flyback converers are used in nearly all mains supplied elecronic
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection
HITFET BTS N Feaures Logic Level Inpu Inpu Proecion (ESD) Thermal shudown Green produc (RoHS complian) Overload proecion Shor circui proecion Overvolage proecion Curren limiaion nalog driving possible
Converter - Brake - Inverter Module XPT IGBT
MIX3WBTED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = Three Phase Inverter CES = I DM = 5 5 = 7 5 = 43 I FSM = 3 CE(sat) =. CE(sat) =. Part name (Marking
Type Marking Pin Configuration Package SMBT3904/MMBT3904 SOT23 SMBT3904S 2=E 1=B 3=C 1=E1 2=B1 3=C2
SMBT94...MMBT94 NPN Silicon Swiching Transisors High D curren gain:. ma o ma Low collecoremier sauraion volage For SMBT94S: Two (galvanic) inernal isolaed ransisors wih good maching in one package omplemenary
SOTiny TM LVDS High-Speed Differential Line Receiver. Features. Description. Applications. Pinout. Logic Diagram. Function Table
67890678906789067890678906789067890678906789067890678906789067890 SOTiny TM LVDS High-Speed Differenial Line Receiver Feaures Mees or Exceeds he Requiremens of NSI TI/EI-6-99 Sandard Signaling raes up
Silicon Diffused Power Transistor
PHE39 GENERAL DESCRIPTION The PHE39 is a silicon npn power swiching ransisor in he TO22AB envelope inended for use in high frequency elecronic lighing ballas applicaions, converers, inverers, swiching
IXFR230N20T V DSS. GigaMOS TM Power MOSFET = 200V = 156A. 8.0m t rr. 200ns. (Electrically Isolated Tab)
GigaMOS TM Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFR23N2T V DSS = 2V I D25 = 156A R DS(on) 8.m t rr 2ns ISOPLUS247 E153432 Symbol Test
Item Symbol Unit MBN800E33D Collector Emitter Voltage V CES V 3,300 Gate Emitter Voltage V GES V ±20 Collector Current. DC I C 800 A 1ms I Cp
IGBT MODULE Spec.No.IGBT-SP-312 R4 P1 Silicon N-channel IGBT OUTLINE DRAWING FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas
Silicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper diode in a plasic full-pack envelope inended for use in horizonal deflecion
Converter - Brake - Inverter Module (CBI 1) Trench IGBT
Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32
TrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information IXTPN7T IXTYN7T S = 7 V I D = A R DS(on) 9. mω N-Channel Enhancement Mode Avalanche Rated TO-22 (IXTP) G D S D (TAB) Symbol Test Conditions Maximum
MBN1200E33D. DC I C 1,200 A 1ms I Cp. 2,400 Forward Current. DC I F 1,200 A 1ms I FM. 2,400 Junction Temperature. o C -40 ~ +125
IGBT MODULE Spec.No.IGBT-SP-25 R8 P1/6 MBN12E33D Silicon N-channel IGBT FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas recovery
HiPerFAST TM IGBT with Diode
HiPerFAST TM IGBT with Diode C-Class High Speed IGBTs IXGK 6N6CD IXGX 6N6CD S = 6 V = 7 A (sat) =. V t fi(typ) = ns Symbol Test Conditions Maximum Ratings S = C to C 6 V V CGR = C to C; R GE = MΩ 6 V V
IXFH400N075T2 IXFT400N075T2
Advance Technical Information TrenchT2 TM HiperFET TM Power MOSFET IXFH4N75T2 IXFT4N75T2 V DSS I D25 R DS(on) = 75V = 4A 2.3mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH)
TrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information V DSS = 55 V I D25 = A R DS(on) 8.8 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS = 25 C to 175
Features / Advantages: Applications: Package: SOT-227B (minibloc)
IX7R1N XPT CS 1 I C5 1 1.8 C(sat) Boost Chopper Part number IX7R1N Backside: isolated 3 1 Features / dvantages: pplications: Package: SOT-7B (minibloc) asy paralleling due to the positive temperature coefficient
IXXH75N60C3D1 V CES = 600V I C110. XPT TM 600V IGBT GenX3 TM w/ Diode. = 75A V CE(sat) 2.3V t fi(typ) = 75ns
XPT TM 6V IGBT GenX TM w/ Diode Extreme Light Punch Through IGBT for -6 khz Switching IXXH7N6CD S = 6V = 7A (sat).v t fi(typ) = 7ns Symbol Test Conditions Maximum Ratings S = C to 7 C 6 V V CGR = C to
Smart Highside Power Switch PROFET
Smar ighside Power Swich PROFET BTS 410E2 Feaures TO220AB/ Overload proecion Curren limiaion Shor circui proecion Thermal shudown 1 1 Overvolage proecion (including Sandard Sraigh leads SMD load dump)
TrenchMV TM Power MOSFET
TrenchMV TM Power MOSFET Preliminary Technical Information IXTA182N55T IXTP182N55T V DSS = 55 V I D25 = 182 A R DS(on) 5. m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings
IGBT Module H Bridge MIXA81H1200EH. = 1200 V = 120 A V CE(sat) = 1.8 V V CES I C25. Part name (Marking on product) MIXA81H1200EH.
MIX1H1EH IGBT Module H Bridge CES 5 = 1 = 1 CE(sat) = 1. Part name (Marking on product) MIX1H1EH 13, 1 1 9 1 19 15 E773 3 11 1 1, Features: pplication: Package: Easy paralleling due to the positive temperature
Six-Pack XPT IGBT MIXA30W1200TML. V CES = 1200 V I C25 = 43 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA30W1200TML
MIX3WTML Six-Pack XPT IGBT S = = 3 (sat) =.8 Part name (Marking on product) MIX3WTML, 3 8 8 NTC 3 7,, 9, E7873 7 Pin configuration see outlines. 3 9, Features: High level of integration Rugged XPT design
HiPerFAST TM IGBT ISOPLUS247 TM
HiPerFAST TM IGBT ISOPLUS7 TM Lightspeed TM Series (Electrically Isolated Back Surface) IXGR 6N6C IXGR 6N6CD S = 6 V = 7 A (sat) =.7 V t fi(typ) = ns Preliminary Data Sheet IXGR_C IXGR_CD Symbol Test Conditions
IXYL40N250CV1 V CES. High Voltage XPT TM IGBT w/ Diode = 2500V I C110. = 40A V CE(sat) 4.0V = 134ns. t fi(typ) Advance Technical Information
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYLN2CV1 S = 2V 11 = A (sat).v = 13ns t fi(typ) (Electrically Isolated Tab) ISOPLUS i-pak TM Symbol Test Conditions Maximum Ratings S =
IXFK120N30T IXFX120N30T
GigaMOS TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Advance Technical Information IXFK12N3T IXFX12N3T S = 3V I D25 = 12A R DS(on) 24mΩ t rr 2ns TO-264 (IXFK) Symbol
MC74HC138A. 1 of 8 Decoder/ Demultiplexer. High Performance Silicon Gate CMOS
of 8 Decoder/ Demuliplexer High Performance Silicon Gae CMOS The is idenical in pinou o he LS8. The device inpus are compaible wih sandard CMOS oupus; wih pullup resisors, hey are compaible wih LSTTL oupus.
IXYN82N120C3H1 V CES
V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYNNC3H S = V = A (sat) 3.V t fi(typ) = 93ns SOT-B, minibloc E33 Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C,
Six-Pack XPT IGBT MIXA80W1200TED V CES I C25. = 1200 V = 120 A V CE(sat) = 1.8 V. Part name (Marking on product) MIXA80W1200TED
MIXW12TED SixPack XPT IGBT CES 2 = 12 = 12 CE(sat) = 1. Part name (Marking on product) MIXW12TED 2, 2 1, 1 1 9 17 NTC 2 1 23, 24 21, 22 19, 2 E 7273 1 3 7 11 Pin configuration see outlines. 4 27, 2 12
TrenchT2 TM Power MOSFET
Preliminary Technical Information TrenchT2 TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N4T2-7 V DSS = V I D = 3A 2.5mΩ R DS(on) TO-263 (7-lead) Symbol Test Conditions Maximum Ratings
IXTA50N25T IXTQ50N25T
Trench Gate Power MOSFET N-Channel Enhancement Mode IXTANT IXTQNT IXTPNT IXTHNT V DSS = V I D = A R DS(on) 6mΩ TO-3 AA (IXTA) TO-2AB (IXTP) TO-3P (IXTQ) G S G D S G D S Symbol Test Conditions Maximum Ratings