O10 W10. Features / Advantages: Applications: Package: V2-Pack. 3~ Rectifier with brake unit for drive inverters
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- Brittany Waters
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1 ZB-ioX hyrisor Module M = = 8 D SM = 7 3~ ecifier Brake hopper ES = = 8 5 E(sa) =.7 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni Par number ZB-ioX Backside: isolaed O S E M L7 G7 7 O eaures / dvanages: pplicaions: Package: -Pack Package wih DB ceramic base plae mproved emperaure and power cycling Planar passivaed chips ery low forward volage drop ery low leakage curren XP - nd generaion Xreme ligh Punch hrough ugged XP design resuls in: - shor circui raed for µsec. - very low gae charge - low EM - square x c hin wafer echnology combined wih XP design resuls in a compeiive low E(sa) and low hermal resisance 3~ ecifier wih brake uni for drive inverers solaion olage: 3 ~ ndusry sandard ouline ohs complian Soldering pins for PB mouning Heigh: 7 mm Base plae: DB ceramic educed weigh dvanced power cycling erms and ondiions of Usage he daa conained in his produc daa shee is exclusively inended for echnically rained saff. he user will have o evaluae he suiabiliy of he produc for he inended applicaion and he compleeness of he produc daa wih respec o his applicaion. he specificaions of our componens may no be considered as an assurance of componen characerisics. he informaion in he valid applicaion- and assembly noes mus be considered. Should you require produc informaion in excess of he daa given in his produc daa shee or which concerns he specific applicaion of your produc, please conac your local sales office. Due o echnical requiremens our produc may conain dangerous subsances. or informaion on he ypes in quesion please conac your local sales office. Should you inend o use he produc in aviaion, in healh or life endangering or life suppor applicaions, please noify. or any such applicaion we urgenly recommend - o perform join risk and qualiy assessmens; - he conclusion of qualiy agreemens; - o esablish join measures of an ongoing produc survey, and ha we may make delivery dependen on he realizaion of any such measures. XYS reserves he righ o change limis, condiions and dimensions. 7 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 745f
2 ZB-ioX ecifier Symbol SM/DSM M/DM /D Definiion ondiions = = J = 5 aings yp. max. 7 forward volage drop =.7 D = = = 8 8 = 85 J J hreshold volage J = 5.83 for power loss calculaion only r slope resisance.9 mω hermal resisance juncion o case.5 K/ hj P o oal power dissipaion 5 P GM P G J J = 5 SM max. forward surge curren = ms; (5 Hz), sine J = 45 = 8,3 ms; ( Hz), sine = J juncion capaciance = 4 f = MHz 54 max. gae power dissipaion P= 3 µs = 5 average gae power dissipaion = ms; (5 Hz), sine = 8,3 ms; ( Hz), sine J min = 3 µs 5 P J = 5 ² value for fusing = ms; (5 Hz), sine = 45 (di/d) cr bridge oupu curren criical rae of rise of curren recangular d = ⅓ = 8,3 ms; ( Hz), sine = ms; (5 Hz), sine = 8,3 ms; ( Hz), sine J = 5 = = = 5 J J =.5 Uni µ m k²s k²s k²s k²s J p J = 5 ; f = 5 Hz P= µs; di G /d =.45 /µs; G =.45; = ⅔ repeiive, = 8 (dv/d) criical rae of rise of volage = ⅔ DM J = 5 cr max. non-repeiive reverse/forward blocking volage max. repeiive reverse/forward blocking volage reverse curren, drain curren /D /D hh hermal resisance case o heasink. GK = ; mehod (linear volage rise) G gae rigger volage = D DM J J = /µs /µs /µs.5 G gae rigger curren D = J = 5 95 m J = -4. m GD gae non-rigger volage = ⅔ J =. D DM 5 GD gae non-rigger curren m L laching curren p = µs J = 5 45 m G =.45; di G /d =.45 /µs H holding curren D = GK = J = 5 m gd gae conrolled delay ime = ½ J = 5 µs D DM G =.45; di G /d =.45/µs non-repe., = q urn-off ime = ; = ; = ⅔ DM J = 5 5 µs di/d = /µs dv/d = /µs p = µs K/ XYS reserves he righ o change limis, condiions and dimensions. 7 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 745f
3 ZB-ioX Brake GB + Diode Symbol ES GES GEM 5 8 Definiion collecor emier volage collecor curren ondiions = 5 max. P o oal power dissipaion = 5 5 E(sa) collecor emier sauraion volage = ; GE = 5 J = 5.7. GE(h) gae emier hreshold volage = 4 m; = ES collecor emier leakage curren = ; = GES BSO max. D gae volage max. ransien gae emier volage J min. aings yp. 8 4 Uni 7.5 urn-on delay ime 3 ns reverse bias safe operaing area GE E E ES GE gae emier leakage curren = ± GE J = 8 J = 5 = 5 J.9.8 ± ±3. 3 m. m QG(on) oal gae charge E = ; GE = 5 ; = 34 n E E d(on) r d(off) f on off M SSO S curren rise ime urn-off delay ime curren fall ime urn-on energy per pulse urn-off energy per pulse shor circui safe operaing area shor circui duraion inducive load = ; = E = ±5 ; =.8 Ω GE = ±5 ; =.8 Ω GE EK = EK = = 7 ; = ±5 E G G GE = 5 J 5 7 ns 38 ns 3 ns.5 mj.5 mj shor circui curren S G =.8Ω; non-repeiive 45 hj hh hermal resisance juncion o case hermal resisance case o heasink J = 5 J J..5 n µs K/ K/ Brake Diode M 5 max. repeiive reverse volage J forward curren 8 = 8 forward volage = 3 reverse curren = M Q rr M rr reverse recovery charge max. reverse recovery curren reverse recovery ime = -di /d = /µs = 3 J = 5 J J = 5 J = 5 J m m 5. µ 5 3 ns reverse recovery energy.9 mj hj hermal resisance juncion o case.9 K/ hh hermal resisance case o heasink.3 K/ XYS reserves he righ o change limis, condiions and dimensions. 7 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 745f
4 ZB-ioX Package aings Symbol Definiion ondiions min. yp. max. Uni MS MS curren per erminal J virual juncion emperaure -4 5 op operaion emperaure -4 5 eigh M D dspp/pp dspb/pb -Pack sg sorage emperaure -4 5 SOL mouning orque creepage disance on surface sriking disance hrough air isolaion volage = second = minue erminal o erminal erminal o backside 5/ Hz, MS; SOL m g Nm mm mm Daa Marix: yp (-9), D+Prod.ndex (-5), K# (-3) leer (33), lfd.# (33-3) Par Number Lo.No: xxxxxx yyww UL Dae code Prod. ndex Ordering Sandard Ordering Number Marking on Produc Delivery Mode Quaniy ode No. ZB-ioX ZB-ioX Box 55 Equivalen ircuis for Simulaion * on die level = 5 J hyrisor Brake Diode max hreshold volage.83 max slope resisance * mω XYS reserves he righ o change limis, condiions and dimensions. 7 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 745f
5 ZB-ioX Deail X Ø.5 Ø. M : 7 3 ±.5 4.5±.5 (4). Oulines -Pack emarks: EJO P self-apping screws of he dimension K5 are recommended for he mechanical connecion beween module and PB. hoose he righ lengh according o your board hickness a a maximum deph of mm of he module holes. he recommended mouning orque is.5 Nm..5 Deail Y M 5: Ø.5 (DN 4 43).5±. Ø X Y x ±.3 4. ± ±.3. ±.3.8 ±.3.7±.3 9.8±.3 7.±.3.4 ±.3.8 ±.3 ± ± ± B B D D E G H E H G M N K L M N K L O O P S U P S U ±..5 4 ±.5 8 ±.3 Marking O S E M L7 G7 7 O XYS reserves he righ o change limis, condiions and dimensions. 7 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 745f
6 ZB-ioX hyrisor J = [] 5 J = 5 5 SM 4 [] 3 J = 5 J = [ s] 5 J = 45 J = [] ig. orward curren vs. volage drop per hyrisor 5Hz, 8% M... [s] ig. Surge overload curren vs. ime per hyrisor [ms] ig. 3 vs. ime per hyrisor G [] : G, J = 5 : G, J = 5 3: G, J = gd [μs] yp. Limi J = 5 4 ()M 8 [] 4 D = : P G =.5 5: P GM = 5 GD, 4 = 5 : P GM =. 3 4 G [m] ig. 4 Gae rigger characerisics G [m] ig. 5 Gae rigger delay ime 5 5 [ ] ig. 5 Max. forward curren vs. case emperaure per hyrisor 8 P o [] 4 D = ()M [] h :.. K/.4 K/.5. K/.8 K/. K/.4. K/ Z hj.3 onsans for Z hj calc.: [K/] i h (K/) i (s) amb [ ] [ms] ig. 4 Power dissipaion vs. forward curren and ambien emperaure per hyrisor ig. ransien hermal impedance juncion o case vs. ime per hyrisor XYS reserves he righ o change limis, condiions and dimensions. 7 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 745f
7 ZB-ioX Brake GB + Diode GE = E = [] 5 [] J = 5 [] E on [mj] E [] ig. Oupu characerisics GB G =.8 Ohm E = GE = ±5 J = 5 E on d(on) 5 5 [] 4 3 r ig. 4 yp. urn-on energy & swich. imes vs. collecor curren r [ns] E off 3 [mj] E [] ig. yp. oupu characerisics GB E off G =.8 Ohm E = GE = ±5 J = 5 d(off) 5 5 [] [ns] ig. 5 yp. urn-off energy & swich. imes vs. collecor curren f [] GE [] ig. 3 yp. ransfer charac. GB [] ig. yp. forward characerisics Diode 8 4 [mj] G =.8 Ohm = J = [] ig. 7 yp. reverse recovery characerisics Diode rr 8 rr 4 [].5..5 [mj]..5 J = 5 = = G [Ohm] ig. 8 yp. reverse recovery characerisics Diode rr 5 75 rr 5 5 [] Z hj. [K/] Diode GB GB Diode i i i i [s] ig. 9 ransien hermal resisance juncion o case XYS reserves he righ o change limis, condiions and dimensions. 7 XYS all righs reserved Daa according o E 747and per semiconducor unless oherwise specified 745f
8 Mouser Elecronics uhorized Disribuor lick o iew Pricing, nvenory, Delivery & Lifecycle nformaion: XYS: ZB-ioX
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