IGBT Highspeed5IGBTinTRENCHSTOP TM 5technology. IGZ100N65H5 650VIGBThighspeedseriesfifthgeneration. Datasheet. IndustrialPowerControl

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1 IGBT HighspeedIGBTinTRENCHSTOP TM echnology IGZ1NH VIGBThighspeedseriesfifhgeneraion Daashee IndusrialPowerConrol

2 IGZ1NH Highspeedseriesfifhgeneraion HighspeedIGBTinTRENCHSTOP TM echnology FeauresandBenefis: HighspeedHechnologyoffering UlralowlossswichinghanksoKelvinemierpinin combinaionwihtrenchstop TM Besinclassefficiencyinhardswichingandresonan opologies PlugandplayreplacemenofpreviousgeneraionIGBTs Vbreakdownvolage LowgaechargeQG Maximumjuncionemperaure17 C QualifiedaccordingoJEDECforargeapplicaions Pbfreeleadplaing;RoHScomplian CompleeproducspecrumandPSpiceModels: hp:// Applicaions Uninerrupiblepowersupplies Weldingconverers Midohighrangeswichingfrequencyconverers Solarsringinverers Packagepindefiniion: PinC&backsidecollecor PinEemier PinKKelvinemier PinGgae Pleasenoe:TheemierandKelvinemierpinsareno exchangeable.theirexchangemighleadomalfuncion. KeyPerformanceandPackageParameers Type VCE IC VCEsa,Tvj=2 C Tvjmax Marking Package IGZ1NH V 1A 1.V 17 C G1EH PGTO Rev.2.1,214131

3 IGZ1NH Highspeedseriesfifhgeneraion TableofConens Descripion Table of Conens Maximum Raings Thermal Resisance Elecrical Characerisics Elecrical Characerisics Diagrams Package Drawing Tesing Condiions Revision Hisory Disclaimer Rev.2.1,214131

4 IGZ1NH Highspeedseriesfifhgeneraion MaximumRaings Foropimumlifeimeandreliabiliy,Infineonrecommendsoperaingcondiionshadonoexceed8%ofhemaximumraingssaedinhisdaashee. Parameer Symbol Value Uni Collecoremiervolage,Tvj 2 C VCE V DCcollecorcurren,limiedbyTvjmax TC=2 C TC=1 C IC Pulsedcollecorcurren,plimiedbyTvjmax 1) ICpuls 4. A Turn off safe operaing area VCE V,Tvj 17 C,p=1µs 1) 4. A Gaeemier volage TransienGaeemiervolage(p 1µs,D<.1) PowerdissipaionTC=2 C PowerdissipaionTC=1 C VGE Po ±2 ± Operaing juncion emperaure Tvj C Sorage emperaure Tsg...+1 C Soldering emperaure, wave soldering 1.mm (.3in.) from case for 1s 2 Mouning orque, M3 screw Maximum of mouning processes: 3 A V W C M. Nm ThermalResisance Parameer Symbol Condiions Max.Value Uni Characerisic IGBT hermal resisance, juncion case Thermal resisance juncion ambien Rh(jc).28 K/W Rh(ja) 4 K/W ElecricalCharacerisic,aTvj=2 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni SaicCharacerisic Collecoremier breakdown volage V(BR)CES VGE=V,IC=.2mA V Collecoremier sauraion volage VCEsa VGE=1.V,IC=1.A Tvj=2 C Tvj=1 C Tvj=1 C Gaeemier hreshold volage VGE(h) IC=1.mA,VCE=VGE V Zero gae volage collecor curren ICES VCE=V,VGE=V Tvj=2 C Tvj=17 C Gaeemier leakage curren IGES VCE=V,VGE=2V 1 na Transconducance gfs VCE=2V,IC=1.A 2. S V µa 1) Defined by design. No subjec o producion es. 4 Rev.2.1,214131

5 IGZ1NH Highspeedseriesfifhgeneraion ElecricalCharacerisic,aTvj=2 C,unlessoherwisespecified Parameer Symbol Condiions Value min. yp. max. Uni DynamicCharacerisic Inpu capaciance Cies Oupu capaciance Coes VCE=2V,VGE=V,f=1MHz 97 Reverse ransfer capaciance Cres 21 Gae charge Inernal emier inducance 1) measured mm (.197 in.) from case QG VCC=2V,IC=1.A, VGE=1V pf 21. nc LE 13. nh SwichingCharacerisic,InduciveLoad Parameer Symbol Condiions Value min. yp. max. Uni IGBTCharacerisic,aTvj=2 C Turnon delay ime d(on) Tvj=2 C, 3 ns Rise ime VCC=4V,IC=.A, r 9 ns VGE=./1.V, Turnoff delay ime d(off) RG(on)=8.Ω,RG(off)=18.Ω, 421 ns Fall ime Lσ=3nH,Cσ=2pF f 1 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include ail and.8 mj Turnoff energy diode reverse recovery. Diode Eoff.77 mj from IKZ7NEH. Toal swiching energy Es 1.2 mj SwichingCharacerisic,InduciveLoad Parameer Symbol Condiions Value min. yp. max. Uni IGBTCharacerisic,aTvj=1 C Turnon delay ime d(on) Tvj=1 C, 28 ns Rise ime VCC=4V,IC=.A, r 12 ns VGE=./1.V, Turnoff delay ime d(off) RG(on)=8.Ω,RG(off)=18.Ω, 48 ns Fall ime Lσ=3nH,Cσ=2pF f 17 ns Lσ,CσfromFig.E Turnon energy Eon Energy losses include ail and 1.43 mj Turnoff energy diode reverse recovery. Diode Eoff.7 mj from IKZ7NEH. Toal swiching energy Es 2.19 mj 1) The inernal emier inducance does no affec he gae conrol circuiry if bypassed by using he emier sense pin. Rev.2.1,214131

6 IGZ1NH Highspeedseriesfifhgeneraion 1 IC,COLLECTORCURRENT[A] 1 1 Po,POWERDISSIPATION[W] no for linear use VCE,COLLECTOREMITTERVOLTAGE[V] Figure 1. Forwardbiassafeoperaingarea (D=,TC=2 C,Tvj 17 C,VGE=1V,p=1µs, ICmaxdefinedbydesignnosubjeco producion es) TC,CASETEMPERATURE[ C] Figure 2. Powerdissipaionasafuncionofcase emperaure (Tvj 17 C) IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE = 2V 18V 1V 12V 1V 7V V V 4V TC,CASETEMPERATURE[ C] Figure 3. Collecorcurrenasafuncionofcase emperaure (VGE 1V,Tvj 17 C) VCE,COLLECTOREMITTERVOLTAGE[V] Figure 4. Typicaloupucharacerisic (Tvj=2 C) Rev.2.1,214131

7 IGZ1NH High speed series fifh generaion VGE = 2V IC, COLLECTOR CURRENT [A] IC, COLLECTOR CURRENT [A] 32 18V 28 14V 12V 24 9V 8V 2 V 1 V Tvj = 2 C Tvj = 17 C VCE, COLLECTOREMITTER VOLTAGE [V] VGE, GATEEMITTER VOLTAGE [V] Figure. Typical oupu characerisic (Tvj=17 C) Figure. Typical ransfer characerisic (VCE=2V) 2. 1 IC = 2A IC = A IC = 1A , SWITCHING TIMES [ns] VCEsa, COLLECTOREMITTER SATURATION [V] d(off) f d(on) r Tvj, JUNCTION TEMPERATURE [ C] IC, COLLECTOR CURRENT [A] Figure 7. Typical collecoremier sauraion volage as Figure 8. Typical swiching imes as a funcion of a funcion of juncion emperaure collecor curren (VGE=1V) (inducive load, Tvj=1 C, VCE=4V, VGE=/1V, RG(on)=8Ω, RG(off)=18Ω, dynamic es circui in Figure E) 7 Rev. 2.1,

8 IGZ1NH High speed series fifh generaion 1 d(off) f d(on) r, SWITCHING TIMES [ns], SWITCHING TIMES [ns] d(off) f d(on) r RG, GATE RESISTANCE [Ω] Figure 9. Typical swiching imes as a funcion of gae resisance (inducive load, Tvj=1 C, VCE=4V, VGE=/1V, IC=A, dynamic es circui in Figure E) yp. min. max.. Eoff Eon Es 11 E, SWITCHING ENERGY LOSSES [mj] VGE(h), GATEEMITTER THRESHOLD VOLTAGE [V] 7 Figure 1. Typical swiching imes as a funcion of juncion emperaure (inducive load, VCE=4V, VGE=/1V, IC=A, RG(on)=8Ω, RG(off)=18Ω, dynamic es circui in Figure E) Tvj, JUNCTION TEMPERATURE [ C] Tvj, JUNCTION TEMPERATURE [ C] IC, COLLECTOR CURRENT [A] Figure 11. Gaeemier hreshold volage as a funcion of juncion emperaure (IC=1mA) 8 Figure 12. Typical swiching energy losses as a funcion of collecor curren (inducive load, Tvj=1 C, VCE=4V, VGE=/1V, RG(on)=8Ω, RG(off)=18Ω, dynamic es circui in Figure E) Rev. 2.1,

9 IGZ1NH High speed series fifh generaion. 2. Eoff Eon Es Eoff Eon Es 2.2 E, SWITCHING ENERGY LOSSES [mj] E, SWITCHING ENERGY LOSSES [mj] RG, GATE RESISTANCE [Ω] Figure 13. Typical swiching energy losses as a funcion of gae resisance (inducive load, Tvj=1 C, VCE=4V, VGE=/1V, IC=A, dynamic es circui in Figure E) VCE = 13V VCE = 2V 14 VGE, GATEEMITTER VOLTAGE [V] E, SWITCHING ENERGY LOSSES [mj] 1 1 Eoff Eon Es Figure 14. Typical swiching energy losses as a funcion of juncion emperaure (inducive load, VCE=4V, VGE=/1V, IC=A, RG(on)=8Ω, RG(off)=18Ω, dynamic es circui in Figure E) Tvj, JUNCTION TEMPERATURE [ C] VCE, COLLECTOREMITTER VOLTAGE [V] Figure 1. Typical swiching energy losses as a funcion of collecor emier volage (inducive load, Tvj=1 C, VGE=/1V, IC=A, RG(on)=8Ω, RG(off)=18Ω, dynamic es circui in Figure E) QG, GATE CHARGE [nc] Figure 1. Typical gae charge (IC=1A) 9 Rev. 2.1,

10 IGZ1NH High speed series fifh generaion Zh(jc), TRANSIENT THERMAL IMPEDANCE [K/W] C, CAPACITANCE [pf] 1E Cies Coes Cres single pulse.1.1 1E 3 VCE, COLLECTOREMITTER VOLTAGE [V] D =..1 i: ri[k/w]: 4.7E E3 τi[s]: 2.7E 2.E4 2.2E E 1E p, PULSE WIDTH [s] Figure 17. Typical capaciance as a funcion of collecoremier volage (VGE=V, f=1mhz) Figure 18. IGBT ransien hermal impedance (D=p/T) 1 Rev. 2.1,

11 IGZ1NH High speed series fifh generaion 89:;<=>?:> $'( $%& 987 8"! !! 8 # 8# 8 8# " # ! ! 98# 89!8 98!8 " " 7 8!7 8# !8#!89 #8 # ! 8 $%& # ! 8 7 8" 8 8!# 8 " ! 1 )*3 $'( " # 8 7" 8"! ! 8!9 899# " 8## 8#! 89" 8 8!" 87# 87 87! " 87!" 11,)+3 4.,3 4" " 7 ) #89 3+,3.,/3)41, ! 3111, Rev. 2.1,

12 IGZ1NH High speed series fifh generaion vge() 9% VGE a a 1% VGE b b ic() 9% IC 9% IC 1% IC 1% IC vce() d(off) f d(on) r vge() 9% VGE 1% VGE ic() CC 2% IC vce() 2 E off = 4 VCE x IC x d E 1 1 parasiic relief on = VCE x IC x d 2% VCE Rev. 2.1,

13 IGZ1NH High speed series fifh generaion Revision Hisory IGZ1NH Revision: , Rev. 2.1 Previous Revision Revision Dae Subjecs (major changes since las revision) Preliminary daa shee Final daa shee We Lisen o Your Commens Any informaion wihin his documen ha you feel is wrong, unclear or missing a all? Your feedback will help us o coninuously improve he qualiy of his documen. Please send your proposal (including a reference o his documen) o: erraum@infineon.com Published by Infineon Technologies AG 8172 Munich, Germany 8172 München, Germany 214 Infineon Technologies AG All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics. Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion, warranies of noninfringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices, please conac he neares Infineon Technologies Office ( Warnings Due o echnical requiremens, componens may conain dangerous subsances. For informaion on he ypes in quesion, please conac he neares Infineon Technologies Office. The Infineon Technologies componen described in his Daa Shee may be used in lifesuppor devices or sysems and/or auomoive, aviaion and aerospace applicaions or sysems only wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha lifesuppor, auomoive, aviaion and aerospace device or sysem or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. 13 Rev. 2.1,