Smart Lowside Power Switch HITFET BSP 75N
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1 Smar Lowside Power Swich HITFET BSP 75N Daa Shee Rev. 1.4 Feaures Logic Level Inpu Inpu proecion (ESD) Thermal shudown wih auo resar Overload proecion Shor circui proecion Overvolage proecion Curren limiaion Green Produc (RoHS complian) AEC Sress Tes Qualificaion Applicaion All kinds of resisive, inducive and capaciive loads in swiching applicaions µc compaible power swich for 12 V and 24 V DC applicaions and for 42 Vol Powerne Replaces elecromechanical relays and discree circuis General Descripion N channel verical power FET in Smar Power Technology. Fully proeced by embedded proecion funcions. Type Ordering Code Package HITFET BSP 75N on reques PG-SOT223-4 Produc Summary Parameer Symbol Value Uni Coninuous drain source volage V DS 6 V On-sae resisance R DS(ON) 55 mω Curren limiaion I D(lim) 1 A Nominal load curren I D(Nom).7 A Clamping energy E AS 55 mj Daa Shee Rev
2 V bb HITFET M Logic Over volage Proecion OUTPUT Sage DRAIN IN dv/d limiaion ESD Over emperaure Proecion Shor circui Proecion Curren Limiaion Figure 1 Block Diagram IN DRAIN TAB Figure 2 Pin Configuraion Pin Definiions and Funcions Pin No. Symbol Funcion 1 IN Inpu; acivaes oupu and supplies inernal logic 2 DRAIN Oupu o he load 3 + TAB Ground; pin3 and TAB are inernally conneced Daa Shee Rev
3 Circui Descripion The BSP 75N is a monolihic power swich in Smar Power Technology (SPT) wih a logic level inpu, an open drain DMOS oupu sage and inegraed proecion funcions. I is designed for all kind of resisive and inducive loads (relays, solenoid) in auomoive and indusrial applicaions. Proecion Funcions Over volage proecion: An inernal clamp limis he oupu volage a V DS(AZ) (min. 6V) when inducive loads are swiched off. Curren limiaion: By means of an inernal curren measuremen he drain curren is limied a I D(lim) ( A yp.). If he curren limiaion is acive he device operaes in he linear region, so power dissipaion may exceed he capabiliy of he heasink. This operaion leads o an increasing juncion emperaure unil he over emperaure hreshold is reached. Over emperaure and shor circui proecion: This proecion is based on sensing he chip emperaure. The locaion of he sensor ensures a fas and accurae juncion emperaure deecion. Over emperaure shudown occurs a minimum 15 C. A hyseresis of yp. 1 K enables an auomaic resar by cooling. The device is ESD proeced according Human Body Model (4 kv) and load dump proeced (see Maximum Raings). Daa Shee Rev
4 Absolue Maximum Raings T j = 25 C, unless oherwise specified Parameer Symbol Values Uni Remarks 1) Coninuous drain source volage V DS 6 V Drain source volage for shor circui proecion V DS 36 V Coninuous inpu volage V IN V Peak inpu volage V IN V Coninuous Inpu Curren -.2V V IN 1V V IN <-.2V or V IN >1V Operaing emperaure range Sorage emperaure range I IN no limi I IN 2mA T j T sg ma Power dissipaion (DC) P o 1.8 W Unclamped single pulse inducive energy E AS 55 mj I D(ISO) =.7 A; V bb =32V Load dump proecion IN = low or high (8 V); R L = 5 Ω IN = high (8 V); R L = 22 Ω Elecrosaic discharge volage (Human Body Model) according o MIL STD 883D, mehod and EOS/ESD assn. sandard S ) V LoadDump 8 47 C C V ESD 4 V V V LoadDump = V P + V S ; V P = 13.5 V RI 3) = 2 Ω; d = 4 ms; Thermal Resisance Juncion soldering poin R hjs 1 K/W 4) Juncion - ambien R hja 7 K/W 1) See also Figure 7 and Figure 1. 2) V LoadDump is seup wihou DUT conneced o he generaor per ISO and DIN See also page 7. 3) R I = inernal resisance of he load dump es pulse generaor LD2. 4) Device on epoxy pcb 4 mm 4 mm 1.5 mm wih 6 cm 2 copper area for pin 4 connecion. Daa Shee Rev
5 Elecrical Characerisics T j = 25 C, unless oherwise specified Parameer Symbol Limi Values min. yp. max. Uni Tes Condiions Saic Characerisics Drain source clamp volage V DS(AZ) 6 75 V I D = 1 ma, T j = C Off sae drain curren I DSS 5 µa V IN = V, V DS = 32 V, T j = C Inpu hreshold volage V IN(h) V I D = 1 ma Inpu curren: normal operaion, I D < I D(lim) : I IN(1) curren limiaion mode, I D = I D(lim) : I IN(2) Afer hermal shudown, I D = A: I IN(3) On-sae resisance On-sae resisance T j = 25 C T j = 15 C T j = 25 C T j = 15 C R DS(on) R DS(on) µa V IN = 5 V mω I D =.7 A, V IN = 5 V mω I D =.7 A, V IN = 1 V Nominal load curren I D(Nom).7 A V BB = 12 V, V DS =.5 V, T S = 85 C, T j < 15 C Curren limi I D(lim) A V IN = 1 V, V DS = 12 V Dynamic Characerisics 1) Turn-on ime V IN o 9% I D : on 1 2 µs R L = 22 Ω, V IN = o 1 V, V BB = 12 V Turn-off ime V IN o 1% I D : off 1 2 µs R L = 22 Ω, V IN = 1 o V, V BB = 12 V Daa Shee Rev
6 Elecrical Characerisics (con d) T j = 25 C, unless oherwise specified Parameer Symbol Limi Values Uni Tes Condiions min. yp. max. Slew rae on 7 o 5% V BB : -dv DS / d on 5 1 V/ µs Slew rae off 5 o 7% V BB : dv DS / d off 1 15 V/ µs R L = 22 Ω, V IN = o 1 V, V BB = 12 V R L = 22 Ω, V IN = 1 o V, V BB = 12 V Proecion Funcions 2) Thermal overload rip emperaure T j C Thermal hyseresis T j 1 Κ Unclamped single pulse inducive energy T j = 25 C T j = 15 C E AS 55 2 mj I D(ISO) =.7 A, V BB = 32 V Inverse Diode Coninuous source drain volage V SD 1 V V IN = V, -I D = 2.7 A 1) See also Figure 9. 2) Inegraed proecion funcions are designed o preven IC desrucion under faul condiions described in he daashee. Faul condiions are considered as ouside normal operaing range. Proecion funcions are no designed for coninuous, repeiive operaion. Daa Shee Rev
7 EMC-Characerisics The following EMC-Characerisics ouline he behavior of ypical devices. They are no par of any producion es. Table 1 Tes Condiions Parameer Symbol Value Uni Remark Temperaure T A 23 ±5 C Supply Volage V S 13.5 V Load R L 27 Ω ohmic Operaion mode DUT specific Fas elecrical ransiens acc. o ISO 7637 Tes 1) Pulse Max. Tes Level PWM DC V IN ( HIGH )=5V Tes Resul OUT x sressed ON OFF f INx =1Hz, D=.5 ON / OFF Pulse Cycle Time and Generaor Impedance 1-2V C C 5ms ; 1Ω 2 +2V C C 5ms ; 1Ω 3a -2V C C 1ms ; 5Ω 3b +2V C C 1ms ; 5Ω 4-7V C C.1Ω 5 175V E(65V) E(75V) 4ms ; 2Ω 1) The es pulses are applied a V S Definiion of funcional saus Class C E Conen All funcions of he device are performed as designed afer exposure o disurbance. One or more funcion of a device does no perform as designed afer exposure and can no be reurned o proper operaion wihou repairing or replacing he device. The value afer he characer shows he limi. Daa Shee Rev
8 V BB Figure 3 PULSE BSP75N R L IN DRAIN Tes circui for ISO pulse Conduced Suscepibiliy Acc. 47A/658/CD IEC (Direc Power Injecion) Direc Power Injecion: Forward Power CW Failure Crieria: Ampliude or frequency variaion max. 1% a OUT Typ. V bb Suscepibiliy a DC-ON/OFF and a PWM 4 35 Conduced Emissions Acc. IEC (1Ω/15Ω mehod) Typ. V bb Emissions a PWM-mode wih 15Ω-maching nework Noise level BSP75N 15ohm Class6 15ohm Class1 dbm Limi 5 OUT, ON OUT, OFF OUT, PWM f / MHz 7 6 dbµv Ω / 8-H Ω / 13-N V BB B A N -1-2, f / MHz BSP75N IN DRAIN R L HF V BB Figure 4 BSP75N IN DRAIN R L 15Ω-Nework Tes circui for conduced emission 1) Tes circui for conduced suscepibiliy 2) 1) 2) For defined de coupling and high reproducibiliy a defined choke (5µH a 1MHz) is insered in he Vbb-Line. Broadband Arificial Nework (shor: BAN) consiss of he same choke (5µH a 1MHz) and he same 15 Ohm-maching nework as for emission measuremen for defined de coupling and high reproducibiliy. Daa Shee Rev
9 Block diagram V BB I D I IN HITFET uc V cc Px.1 BSP75N IN D IN DRAIN V bb GND V IN V DS Figure 8 Applicaion Circui Figure 5 Terms IN Figure 6 Inpu Circui (ESD proecion) ESD zener diodes are no designed for DC curren. LOAD V AZ Drain V DS Power DMOS Source I D Figure 7 Inducive and Over volage Oupu Clamp Daa Shee Rev
10 Timing diagrams V IN V IN I D I D(lim) V DS I D.9*I D.1*ID ϑ j hermal hyseresis on off Figure 11 Shor circui Figure 9 Swiching a Resisive Load V IN V DS(AZ) V DS V BB I D Figure 1 Swiching an Inducive Load Daa Shee Rev
11 1 Max. allowable power dissipaion P o = f(t Amb ) P o 2 2 On-sae resisance R ON = f(t j ); I D =.7 A; V IN = 1 V 1 R ON 9 m Ω 1,6 W 8 1,2 max. 7 6 max. 5 yp.,8 4 3, C C 15 3 On-sae resisance R ON = f(t j ); I D =.7 A; V IN = 5 V 14 R ON T Amb 4 Typ. inpu hreshold volage V IN(h) = f(t j ); I D = 1 ma; V DS = 12 V 2,5 V IN(h) T j 12 mω V 2 yp. 1 max. 8 1,5 6 yp , C 15 T j C 15 T j Daa Shee Rev
12 5 Typ. on-sae resisance R ON = f(v IN ); I D =.7 A; T j = 25 C 2 R ON 6 Typ. curren limiaion I D(lim) = f(t j ); V DS = 12 V, V IN = 1 V 2 I D(lim) 15 mω yp. 1,5 A yp , V C 15 7 Typ. shor circui curren I D(SC ) = f(v IN ); V DS = 12 V, T j = 25 C 2 I D(SC) V IN 8 Max. ransien hermal impedance Z hja = f( p 6cm²; Parameer: D = p /T 1 Z h(ja) T j 1,5 A yp. K/W 1 1,5 1 D= V 8 1 V IN,1,1,1,1 1 1 s 1 P Daa Shee Rev
13 1 Package Oulines HITFET BSP 75N Package Oulines HITFET BSP 75N A 6.5 ±.2 3 ±.1.1 MAX. 1.6±.1 4 7±.3 15 MAX. 3.5 ±.2 B ±.1.25 M A MIN..25 M B ±.4 GPS556 Figure 12 PG-SOT223-4 (Plasic Green Small Ouline Transisor Package) Green Produc (RoHS complian) To mee he world-wide cusomer requiremens for environmenally friendly producs and o be complian wih governmen regulaions he device is available as a green produc. Green producs are RoHS-Complian (i.e Pb-free finish on leads and suiable for Pb-free soldering according o IPC/JEDEC J-STD-2). Please specify he package needed (e.g. green package) when placing an order You can find all of our packages, sors of packing and ohers in our Infineon Inerne Page: hp:// Dimensions in mm Daa Shee 13 Rev. 1.4,
14 Revision Hisory 2 Revision Hisory Version Dae Changes Rev. 1.4 Rev. 1.3 Rev. 1.2 Rev. 1.1 Rev fixed a formaing error in Disclaimer page package naming updaed o PG-SOT released auomoive green version changed package naming from -11 o PG-SOT Package parameer (humidiy and climaic) removed in Maximum raings AEC icon added RoHS icon added Green produc (RoHS-complian) added o he feaure lis Package informaion updaed o green Green explanaion added released producion version Daa Shee 14 Rev. 1.3,
15 Ediion Published by Infineon Technologies AG, Munich, Germany Infineon Technologies AG 28. All Righs Reserved. Legal Disclaimer The informaion given in his documen shall in no even be regarded as a guaranee of condiions or characerisics ( Beschaffenheisgaranie ). Wih respec o any examples or hins given herein, any ypical values saed herein and/or any informaion regarding he applicaion of he device, Infineon Technologies hereby disclaims any and all warranies and liabiliies of any kind, including wihou limiaion warranies of non-infringemen of inellecual propery righs of any hird pary. Informaion For furher informaion on echnology, delivery erms and condiions and prices please conac your neares Infineon Technologies Office ( Warnings Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ypes in quesion please conac your neares Infineon Technologies Office. Infineon Technologies Componens may only be used in life-suppor devices or sysems wih he express wrien approval of Infineon Technologies, if a failure of such componens can reasonably be expeced o cause he failure of ha life-suppor device or sysem, or o affec he safey or effeciveness of ha device or sysem. Life suppor devices or sysems are inended o be implaned in he human body, or o suppor and/or mainain and susain and/or proec human life. If hey fail, i is reasonable o assume ha he healh of he user or oher persons may be endangered. Daa Shee
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