Datasheet, Rev. 1.0, Jan BTS TMB. Smart High-Side Power Switch PROFET One Channel. Automotive Power

Transcription

1 Daashee, Rev. 1.0, Jan BTS500801TMB Smar HighSide Power Swich PROFET One Channel Auomoive Power

2 Smar HighSide Power Swich BTS500801TMB Table of Conens Table of Conens 1 Overview Block Diagram and Terms Block Diagram Terms Pin Configuraion Pin Assignmen BTS500801TMB Pin Definiions and Funcions General Produc Characerisics Absolue Maximum Raings Thermal Resisance Power Sages Inpu Circui Oupu OnSae Resisance Oupu Inducive Clamp Maximum Load Inducance Elecrical Characerisics Proecion Funcions OverLoad Proecion Shor circui impedance Reverse Polariy Proecion Reversafe OverVolage Proecion Loss of Ground Proecion Loss of Proecion Elecrical Characerisics Diagnosis Elecrical Characerisics Package Oulines Revision Hisory Daashee 2 Rev. 1.0,

3 Smar HighSide Power Swich PROFET One Channel BTS500801TMB 1 Overview Feaures Par of scalable produc family Load curren sense ReverSave Very low sandby curren Curren conrolled inpu pin Improved elecromagneic compaibiliy (EMC) Fas demagneizaion of inducive loads Sable behavior a undervolage Green Produc (RoHS complian) AEC qualified PGTO Operaing volage (on) V Overvolage proecion V ON(CL) 39 V OnSae resisance a 150 C R DS(ON) 16 mω Nominal load curren I L(nom) 9.5 A Load curren (ISO) I L(ISO) 37.5 A Curren limiaion I L6(SC) 90 A Sandby curren for whole device wih load I bb(off) 6µA The BTS500801TMB is a one channel highside power swich in PGTO package providing embedded proecive funcions. The power ransisor is buil by a Nchannel verical power MOSFET wih charge pump. The design is based on Smar SIPMOS chip on chip echnology. The BTS500801TMB has a curren conrolled inpu and offers a diagnosic feedback wih load curren sense and a defined faul signal in case of overload operaion, overemperaure shudown and/or shor circui shudown. Type Package Marking BTS500801TMB PGTO S50080B Daashee 3 Rev. 1.0,

4 Smar HighSide Power Swich BTS500801TMB Overview Proecive Funcions ReverSave, channel swiches on in case of reverse polariy Reverse baery proecion wihou exernal componens Shor circui proecion wih lach Overload proecion Mulisep curren limiaion Thermal shudown wih resar Overvolage proecion (including load dump) Loss of ground proecion Loss of proecion (wih exernal diode for charged inducive loads) Elecrosaic discharge proecion (ESD) Diagnosic Funcions Proporional load curren sense (wih defined faul signal in case of overload operaion, over emperaure shudown and/or shor circui shudown) Open load deecion in ONsae by load curren sense Applicaions µc compaible highside power swich wih diagnosic feedback for 12 V grounded loads All ypes of resisive, inducive and capaciive loads Mos suiable for loads wih high inrush currens, so as lamps Replaces elecromechanical relays, fuses and discree circuis Daashee 4 Rev. 1.0,

5 Smar HighSide Power Swich BTS500801TMB Block Diagram and Terms 2 Block Diagram and Terms 2.1 Block Diagram logic IC R bb base chip volage sensor I IN V IS IN IS ESD driver logic over emperaure gae conrol & charge pump load curren sense clamp for inducive load curren limiaion T OUT I L V IN I IS R IS forward volage drop deecion LOAD Overview.emf Figure 1 Block Diagram 2.2 Terms Following figure shows all erms used in his daa shee. V bin V bis I bb V ON I IN IN VBB V IN R IN BTS500801TMB I IS IS OUT I L V IS V OUT R IS Figure 2 Terms Terms.emf Daashee 5 Rev. 1.0,

6 Smar HighSide Power Swich BTS500801TMB Pin Configuraion 3 Pin Configuraion 3.1 Pin Assignmen BTS500801TMB TAB OUT OUT IN IS OUT OUT Figure 3 Pin Configuraion TO2207.emf 3.2 Pin Definiions and Funcions Pin Symbol Funcion 1, 2 OUT Oupu; oupu o he load; pin 1, 2, 6 and 7 mus be exernally shored. 1) 3 IN Inpu; acivaes he power swich if shored o ground. 4 Supply Volage; posiive power supply volage; ab and pin 4 are inernally shored. 5 IS Sense Oupu; Diagnosic feedback; provides a normal operaion a sense curren proporional o he load curren; in case of overload, over emperaure and/or shor circui a defined curren is provided (see Table 1 Truh Table on Page 21). 6, 7 OUT Oupu; oupu o he load; pin 1, 2, 6 and 7 mus be exernally shored. 1) TAB Supply Volage; posiive power supply volage; ab and pin 4 are inernally shored. 1) No shoring all oupus will considerably increase he onsae resisance, reduce he peak curren capabiliy, he clamping capabiliy and decrease he curren sense accuracy. Daashee 6 Rev. 1.0,

7 Smar HighSide Power Swich BTS500801TMB General Produc Characerisics 4 General Produc Characerisics 4.1 Absolue Maximum Raings Absolue Maximum Raings 1) T j = 25 C (unless oherwise specified) Pos. Parameer Symbol Limi Values Uni Condiions Min. Max. Supply Volages Supply volage V Supply volage for full shor circui proecion (single pulse) 2) Supply Volage for Load Dump proecion 3) (SC) 0 30 V (LD) 45 V R I = 2 Ω, R L = 1 Ω Logic Pins Volage a inpu pin V bin V Curren hrough inpu pin I IN ma Volage a curren sense pin V bis V Curren hrough sense pin I IS ma Inpu volage slew rae 4) dv bin /d V/µs Power Sages Load curren 5) Maximum energy dissipaion per channel (single pulse) I L I Lx(SC) A E AS 0.4 J = 12 V, I L(0) = 20 A, T j(0) = 150 C Temperaures Juncion emperaure T j C Sorage emperaure T sg C ESD Suscepibiliy ESD suscepibiliy HBM V ESD 3 3 kv according o EIA/JESD 22A 114B 1) No subjec o producion es, specified by design. 2) Shor circui is defined as a combinaion of remaining resisances and inducances. See Figure 13. 3) Load Dump is specified in ISO 7637, R I is he inernal resisance of he Load Dump pulse generaor. 4) Slew rae limiaion can be achieved by means of using a series resisor for he small signal driver or in series in he inpu pah. A series resisor R IN in he inpu pah is also required for reverse operaion a 16V. See also Figure 14. 5) Curren limiaion is a proecion feaure. Operaion in curren limiaion is considered as ouside normal operaing range. Proecion feaures are no designed for coninuous repeiive operaion. Noe: Sresses above he ones lised here may cause permanen damage o he device. Exposure o absolue maximum raing condiions for exended periods may affec device reliabiliy. Daashee 7 Rev. 1.0,

8 Smar HighSide Power Swich BTS500801TMB General Produc Characerisics Noe: Inegraed proecion funcions are designed o preven IC desrucion under faul condiions described in he daa shee. Faul condiions are considered as ouside normal operaing range. Proecion funcions are no designed for coninuous repeiive operaion. 4.2 Thermal Resisance Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max Juncion o Case 1) R hjc K/W Juncion o Ambien 1) free air device on PCB 2) R hja 1) No subjec o producion es, specified by design. 2) Device mouned on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) wih 6 cm 2 copper heasinking area (one layer, 70 µm hick) for connecion. PCB is verical wihou blown air K/W Daashee 8 Rev. 1.0,

9 Smar HighSide Power Swich BTS500801TMB Power Sages 5 Power Sages The power sage is buil by a Nchannel verical power MOSFET (DMOS) wih charge pump. 5.1 Inpu Circui Figure 4 shows he inpu circui of he BTS500801TMB. The curren source o ensures ha he device swiches off in case of open inpu pin. The zener diode proecs he inpu circui agains ESD pulses. V bin R bb I IN IN I V Z,IN V IN Figure 4 Inpu Circui Inpu.emf A high signal a he required exernal small signal ransisor pulls he inpu pin o ground. A logic supply curren I IN is flowing and he power DMOS swiches on wih a dedicaed slope, which is opimized in erms of EMC emission. I IN ON OFF V OUT 90% 50% 25% (dv/d) ON (dv/d) OFF 10% Figure 5 Swiching a Load (resisive) SwichOn.emf 5.2 Oupu OnSae Resisance The onsae resisance R DS(ON) depends on he supply volage as well as he juncion emperaure T j. Figure 6 shows hese dependencies for he ypical onsae resisance. The volage drop in reverse polariy mode is described in Secion 6.3. Daashee 9 Rev. 1.0,

10 Smar HighSide Power Swich BTS500801TMB Power Sages Figure 6 Typical OnSae Resisance = 12 V T j = 25 C Figure 7 Typical Oupu Volage Drop Limiaion 5.3 Oupu Inducive Clamp When swiching off inducive loads, he oupu volage V OUT drops below ground poenial due o he involved inducance ( di L /d =v L /L ; V OUT V L ). Daashee 10 Rev. 1.0,

11 Smar HighSide Power Swich BTS500801TMB Power Sages VBB V ON I L OUT V OUT L, R L Figure 8 Oupu Clamp OupuClamp.emf To preven desrucion of he device, here is a volage clamp mechanism implemened ha keeps he volage drop across he device a a cerain level (V ON(CL) ). See Figure 8 and Figure 9 for deails. The maximum allowed load inducance is limied. V OUT ON OFF V OUT(CL) V ON(CL) I L InduciveLoad.emf Figure 9 Swiching an Inducance Maximum Load Inducance While deenergizing inducive loads, energy has o be dissipaed in he BTS500801TMB. This energy can be calculaed via he following equaion: E = R ln 1 L I + L + I L V ON( CL) V ON( CL) R L V ON(CL) L R L In he even of deenergizing very low ohmic inducances (R L 0) he following, simplified equaion can be used: E = 1 2 LI 2 L V ON(CL) V ON(CL) The energy, which is convered ino hea, is limied by he hermal design of he componen. For given saring currens he maximum allowed inducance is herefore limied. See Figure 10 for he maximum allowed inducance a =12V. Daashee 11 Rev. 1.0,

12 Smar HighSide Power Swich BTS500801TMB Power Sages = 12 V T j(o) 150 C Figure 10 Maximum load inducance for single pulse, T j(0) 150 C. Daashee 12 Rev. 1.0,

13 Smar HighSide Power Swich BTS500801TMB Power Sages 5.4 Elecrical Characerisics = 12 V, T j = C (unless oherwise specified) Typical values are given a = 12 V, T j = 25 C Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max. General Operaing volage 1) (on) V V IN = 0 V Undervolage shudown 2) V bin(u) V T j = 25 C Undervolage resar of charge (ucp) V pump Operaing curren I IN ma Sandby curren T j = C T j = 150 C I bb(off) µa I IN = 0 A Inpu characerisics Inpu curren for urnon Inpu curren for urnoff I IN(on) ma V bin (ucp) V IN I IN(off) 30 µa Oupu characerisics Onsae resisance T j =25 C T j =150 C =5.5V, T j =25 C =5.5V, T j =150 C R DS(ON) mω V IN =0V, I L =10A, (Tab o pin 1, 2, 6 and 7) Oupu volage drop limiaion a V ON(NL) mv small load currens Nominal load curren (Tab o pin 1, 2, 6 and 7) 3) 4) I L(nom) A T a = 85 C, V ON 0.5 V, T j 150 C ISO load curren (Tab o pin 1, 2, 6 and 7) 4) I L(ISO) A T c =85 C, V ON 0.5 V, T j 150 C Oupu clamp V ON(CL) V I L =40mA, T j =25 C Inverse curren oupu volage 2) 5) drop V ON(inv) mv I L =10A, R IS =1kΩ (Tab o pin 1, 2, 6 and 7) T j = 25 C T j = 150 C Timings Turnon ime o ON µs R L = 2.2 Ω 90% V OUT Turnoff ime o OFF µs R L = 2.2 Ω 10% V OUT Daashee 13 Rev. 1.0,

14 Smar HighSide Power Swich BTS500801TMB Power Sages = 12 V, T j = C (unless oherwise specified) Typical values are given a = 12 V, T j = 25 C Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max Turnon delay afer inverse d(inv) 1 ms > V OUT, operaion 2) V IN(inv) = V IN(fwd) =0V Slew rae On (dv / d) ON V/µs R L = 2.2 Ω 25% o 50% V OUT Slew rae Off (dv/d) OFF V/µs R L = 2.2 Ω 50% o 25% V OUT 1) Please mind he limiaions of he embedded proecion funcions. See Chaper 4.1 and Chaper 6 for deails. 2) No subjec o producion es, specified by design 3) Device mouned on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) wih 6 cm 2 copper heasinking area (one layer, 70 µm hick) for connecion. PCB is verical wihou blown air. 4) No subjec o producion es, parameers are calculaed from R DS(ON) and R h 5) During inverse operaion (I L <0A, V bin > 0 V), a curren hrough he inrinsic body diode causing a volage drop of V ON(inv) resuls in a delayed swich on wih a ime delay d(inv) afer he ransiion from inverse o forward operaion. A sense curren I IS(faul) can be provided by he pin IS unil sandard forward operaion is reached. Noe: Characerisics show he deviaion of parameer a he given supply volage and juncion emperaure. Typical values show he ypical parameers expeced from manufacuring. Daashee 14 Rev. 1.0,

15 Smar HighSide Power Swich BTS500801TMB Proecion Funcions 6 Proecion Funcions The device provides embedded proecive funcions. Inegraed proecion funcions are designed o preven IC desrucion under faul condiions described in he daa shee. Faul condiions are considered as ouside normal operaing range. Proecion funcions are neiher designed for coninuous nor repeiive operaion. 6.1 OverLoad Proecion The load curren I L is limied by he device iself in case of overload or shor circui o ground. There are muliple seps of curren limiaion I Lx(SC) which are seleced auomaically depending on he volage drop V ON across he power DMOS. Please noe ha he volage a he OUT pin is V ON. Figure 11 shows he dependency for a ypical device. 150 I L(SC) 125 A yp. T j = 25 C V 40 V ON(SC) V ON Figure 11 Typical Curren Limiaion Depending on he severiy of he shor condiion as well as on he baery volage he resuling volage drop across he device varies. Whenever he resuling volage drop V ON exceeds he shor circui deecion hreshold V ON(SC), he device will swich off immediaely and lach unil being rese via he inpu. The V ON(SC) deecion funcionaliy is acivaed, when V bin > 10 V yp. and he blanking ime d(sc1) expired afer swich on. In he even ha eiher he shor circui deecion via V ON(SC) is no acivaed or ha he on chip emperaure sensor senses overemperaure before he blanking ime d(sc1) expired, he device swiches off resuling from overemperaure deecion. Afer cooling down wih hermal hyseresis, he device swiches on again. The device will reac as during normal swich on riggered by he inpu signal. Please refer o Figure 12 and Figure 19 for deails. Daashee 15 Rev. 1.0,

16 Smar HighSide Power Swich BTS500801TMB Proecion Funcions V ON(SC) deecion Over emperaure deecion I IN I IN V ON I L V ONx > V ON(SC) I Lx(SC) I L m Τ j hermal hyseresis Figure 12 d(sc1) Overload Behavior V_ON_deec.emf Over_Temp.emf 6.2 Shor circui impedance The capabiliy o handle single shor circui evens depends on he baery volage as well as on he primary and secondary shor impedance. Figure 13 oulines allowable combinaions for a single shor circui even of maximum, secondary inducance for given secondary resisance. 5uH 10mΩ IN OUT PROFET IS L SC R SC SHORT CIRCUIT LOAD shor_circui.emf Ω Figure 13 Shor circui Daashee 16 Rev. 1.0,

17 Smar HighSide Power Swich BTS500801TMB Proecion Funcions 6.3 Reverse Polariy Proecion Reversafe The device can no block a curren flow in reverse polariy condiion. In order o minimize power dissipaion, he device offers Reversave funcionaliy. In reverse polariy condiion he channel will be swiched on provided a sufficien gae o source volage is generaed V GS V Rbb. Please refer o Figure 14 for deails. I Rbb R bb R IN IN IS Logic I L I IN D R IS I IS LOAD Figure 14 signal ground Reverse baery proecion power ground Reverse.emf Addiional power is dissipaed by he inegraed R bb resisor. Use following formula for esimaion of overall power dissipaion P diss(rev) in reverse polariy mode. 2 P diss(rev) R ON(rev) I L + 2 R bb I Rbb For reverse baery volages up o < 16 V he pin IN or he pin IS should be low ohmic conneced o signal ground. This can be achieved e.g. by using a small signal diode D in parallel o he inpu swich or by using a small signal MOSFET driver. For reverse baery volages higher hen = 16 V an addiional resisor R IN is recommended. The overall curren hrough R bb should no be above 80 ma R IN R IS = 0.08A 12V Noe: No proecion mechanism is acive during reverse polariy. The IC logic is no funcional. Daashee 17 Rev. 1.0,

18 Smar HighSide Power Swich BTS500801TMB Proecion Funcions 6.4 OverVolage Proecion Beside he oupu clamp for he power sage as described in Secion 5.3 here is a clamp mechanism implemened for all logic pins. See Figure 15 for deails. R bb V Z,IN V Z,IS IN Logic IS OUT OverVolage.emf Figure 15 OverVolage Proecion 6.5 Loss of Ground Proecion In case of complee loss of he device ground connecions he BTS500801TMB securely changes o or remains in off sae. 6.6 Loss of Proecion In case of complee loss of he BTS500801TMB remains in off sae. In case of loss of connecion wih charged inducive loads a curren pah wih load curren capabiliy has o be provided, o demagneize he charged inducances. I is recommended o use a diode, a Zdiode, or a varisor (V ZL +V D < 30 V or V Zb +V D < 16 V if R IN = 0). For higher clamp volages currens hrough IN and IS have o be limied o 120 ma. Please refer o Figure 16 for deails. R bb R bb IN IS Logic V D V Zb IN IS Logic V D R IN R IS inducive LOAD V ZL R IN R IS inducive LOAD Figure 16 Loss of Vbb_disconnec_A.emf Vbb_disconnec_B.emf Daashee 18 Rev. 1.0,

19 Smar HighSide Power Swich BTS500801TMB Proecion Funcions 6.7 Elecrical Characerisics = 12 V, T j = C (unless oherwise specified) Typical values are given a = 12 V, T j = 25 C Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max. OverLoad Proecion 1) 2) Load curren limiaion T j = 40 C T j = +25 C T j = +150 C Load curren limiaion 2) T j = 40 C T j = +25 C T j = +150 C 1) 2) Load curren limiaion T j = 40 C T j = +25 C T j = +150 C Load curren limiaion 2) T j = 40 C T j = +25 C T j = +150 C 1) 2) Load curren limiaion T j = 40 C T j = +25 C T j = +150 C I L6(SC) 90 I L12(SC) 55 I L18(SC) 45 I L24(SC) 28 I L36(SC) 15 OverVolage Overvolage proecion V Z V I bb = 15 ma Inpu pin V Z,IN V Sense pin V Z,IS V 1) No subjec o producion es, specified by design A V ON = 6 V, (Tab o pin 1, 2, 6 and 7) A V ON = 12 V, m = 170 µs, (Tab o pin 1, 2, 6 and 7) A V ON = 18 V, (Tab o pin 1, 2, 6 and 7) A V ON = 24 V, m = 170 µs, (Tab o pin 1, 2, 6 and 7) A V ON = 36 V, (Tab o pin 1, 2, 6 and 7) V V V > 10 V yp., µs V > V Shor circui shudown deecion volage 1) ON(SC) bin T j = 25 C Shor circui shudown delay afer inpu curren pos. slope 3) d(sc1) ON ON(SC) Thermal shu down emperaure T j(sc) C 1) Thermal hyseresis 1) T j 10 K Reverse Polariy OnSae resisance in case of reverse polariy R ON(rev) mω V IN = 0 V, I L = 10 A, =8V, T j =25 C 1) =8V, T j =150 C 1) =12V, T j =25 C R IS = 1 kω, (pin 1, 2, 6 and 7 o TAB) =12V, T j =150 C Inegraed resisor in line R bb Ω T j = 25 C Daashee 19 Rev. 1.0,

20 Smar HighSide Power Swich BTS500801TMB Proecion Funcions 2) Shor circui curren limi for max. duraion of d(sc1), prior o shudown, see also Figure 12. 3) min. value valid only if inpu offsignal ime exceeds 30 µs Daashee 20 Rev. 1.0,

21 Smar HighSide Power Swich BTS500801TMB Diagnosis 7 Diagnosis For diagnosis purpose, he BTS500801TMB provides an InelliSense signal a he pin IS. The pin IS provides during normal operaion a sense curren, which is proporional o he load curren as long as V bis > 5 V. The raio of he oupu curren is defined as k ILIS = I L /I IS. During swichon no curren is provided, unil he forward volage drops below V ON < 1 V yp. The oupu sense curren is limied o I IS(lim). The pin IS provides in case of any faul condiions a defined faul curren I IS(faul) as long as V bis >8V. Faul condiions are overcurren (V ON > 1 V yp.), curren limi or overemperaure swich off. The pin IS provides no curren during open load in ON and deenergisaion of inducive loads. V b,is R bb V Z,IS I IS I IS(faul) IS V IS R IS Figure 17 Table 1 Block Diagram: Diagnosis Truh Table Sense.emf Parameer Inpu Curren Level Oupu Level Curren Sense I IS Normal operaion L 1) L 0 (I IS(LL) ) H nominal Overload Shor circui o GND Overemperaure Shor circui o Open load H 1) L H L H L H L H L H The accuracy of he provided curren sense raio (k ILIS = I L / I IS ) depends on he load curren. Please refer o Figure 18 for deails. A ypical resisor R IS of 1 kω is recommended. L H L L L L H H Z 1) H 0 (I IS(LL) ) I IS(faul) 0 (I IS(LL) ) I IS(faul) 0 (I IS(LL) ) I IS(faul) 0 (I IS(LL) ) < nominal 2) 0 (I IS(LL) ) 0 (I IS(LH) ) 1) H = High Level, L = Low Level, Z = high impedance, poenial depends on exernal circui 2) Low ohmic shor o may reduce he oupu curren I L and herefore also he sense curren I IS. Daashee 21 Rev. 1.0,

22 Smar HighSide Power Swich BTS500801TMB Diagnosis Figure 18 Curren sense raio k ILIS 1) Deails abou imings beween he diagnosis signal I IS, he forward volage drop V ON and he load curren I L in ONsae can be found in Figure 19. Noe: During operaion a low load curren and a acivaed forward volage drop limiaion he wo level conrol of V ON(NL) can cause a sense curren ripple synchronous o he wo level conrol of V ON(NL). The ripple frequency increases a reduced load currens. I IN normal operaion I IN shor overemperaure V ON V ON <1V yp. V ON >1V yp. V ON V ON >V ON(SC) V ON <1V yp. I L I L1 I L2 I L I Lx(SC) I L I IS I IS2 I IS(lim) I IS(faul) I IS I IS(faul) I IS(faul) 0.9*I IS1 I IS1 I IS(LL) son(is) slc(is) Figure 19 Timing of Diagnosis Signal in ONsae delay(faul) SwichOn.emf 1) The curves show he behavior based on characerizaion daa. The marked poins are guaraneed in his Daashee in Secion 7.1 (Posiion 7.1.1). Daashee 22 Rev. 1.0,

23 Smar HighSide Power Swich BTS500801TMB Diagnosis 7.1 Elecrical Characerisics = 12 V, T j = C (unless oherwise specified) Typical values are given a = 12 V, T j = 25 C Pos. Parameer Symbol Limi Values Uni Condiions Min. Typ. Max. Load Curren Sense Curren sense raio, saic oncondiion k ILIS 12.5 k V IN = 0 V, I IS < I IS(lim) I L = 35 A I L = 10 A I L = 2.5 A I L = 0.5 A I IN = 0 (e.g. during de energizing of disabled inducive loads) 1) Sense sauraion curren 1) I IS(lim) ma V ON < 1 V, yp Sense curren under faul I IS(faul) ma V ON > 1 V, yp. condiions Curren sense leakage curren I IS(LL) µa I IN = Curren sense offse curren I IS(LH) µa V IN = 0, I L Curren sense seling ime o 90% son(is) µs I L =0 20A I 1) IS_sa Curren sense seling ime o 90% 1) I IS_sa. slc(is) µs I L =10 20A FaulSense signal delay afer inpu curren posiive slope delay(faul) µs V ON > 1 V, yp. 1) No subjec o producion es, specified by design Daashee 23 Rev. 1.0,

24 Smar HighSide Power Swich BTS500801TMB Package Oulines 8 Package Oulines 10 ± ±0.2 A B ) 1.27 ±0.1 17± ±0.3 1) ± ±0.2 C 11± ± ±0.1 7 x 0.6 ± x M A B C 1) Typical Meal surface min. X = 7.25, Y = 12.3 All meal surfaces in plaed, excep area of cu. Figure 20 PGTO Green Produc To mee he worldwide cusomer requiremens for environmenally friendly producs and o be complian wih governmen regulaions he device is available as a green produc. Green producs are RoHSComplian (i.e Pbfree finish on leads and suiable for Pbfree soldering according o IPC/JEDEC JSTD020). You can find all of our packages, sors of packing and ohers in our Infineon Inerne Page Packages : hp:// Dimensions in mm Daashee 24 Rev. 1.0,

25 Smar HighSide Power Swich BTS500801TMB Revision Hisory 9 Revision Hisory Version Dae Changes Daashee Iniial version of daashee Rev. 1.0 Daashee 25 Rev. 1.0,

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