Smart Sense High-Side Power Switch

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1 Smar Sense High-Side Power Swich Feaures Shor circui proecion Curren limiaion Proporional load curren sense CMOS compaible inpu Open drain diagnosic oupu Fas demagneizaion of inducive loads Undervolage and overvolage shudown wih auo-resar and hyseresis Overload proecion Thermal shudown Overvolage proecion including load dump (wih exernal -resisor) Reverse baery proecion (wih exernal resisor) oss of ground and loss of bb proecion Elecrosaic discharge (ESD) proecion Applicaion µc compaible power swich wih diagnosic feedback for 2 and 24 DC grounded loads All ypes of resisive, inducive and capacive loads Replaces elecromechanical relays, fuses and discree circuis PROFET General Descripion N channel verical power FET wih charge pump, ground referenced CMOS compaible inpu and diagnosic feedback, proporional sense of load curren, monolihically inegraed in Smar SPMOS echnology. Fully proeced by embedded proecion funcions. Block Diagram Produc Summary Operaing volage bb(on) On-sae resisance R ON 3 mω oad curren (O) (O) 2.6 A Curren limiaion (SCr) 24 A Package TO22-7- TO TO Sandard (saggered) SMD Sraigh 4 + bb olage source Overvolage proecion Curren limi Gae proecion 3 ESD ogic olage sensor ogic Charge pump evel shifer Recifier imi for unclamped ind. loads Oupu olage deecion Curren Sense 6, 7 oad 5 Temperaure sensor R O R Signal 2 PROFET oad Semiconducor Group Page of Jul-2

2 Pin Symbol Funcion Diagnosic feedback: open drain, invers o inpu level 2 ogic ground 3 npu, acivaes he power swich in case of logical high signal 4 bb Posiive power supply volage, he ab is shored o his pin 5 Sense curren oupu, proporional o he load curren, zero in he case of curren limiaion of load curren 6 & 7 (oad, ) Oupu, proeced high-side power oupu o he load. Boh oupu pins have o be conneced in parallel for operaion according his spec (e.g. k ). Design he wiring for he max. shor circui curren Maximum Raings a Tj = 25 C unless oherwise specified Parameer Symbol alues Uni Supply volage (overvolage proecion see page 4) bb 43 Supply volage for full shor circui proecion bb 34 Tj Sar= C oad dump proecion ) oaddump = A + s, A = 3.5 3) oad dump 6 R 2) = 2 Ω, R= Ω, d= 2 ms, = low or high oad curren (Shor circui curren, see page 5) self-limied A Operaing emperaure range Sorage emperaure range T j T sg Power dissipaion (DC), TC 25 C P o 85 W nducive load swich-off energy dissipaion, single pulse bb = 2, Tj,sar = 5 C, TC = 5 C cons. = 2.6 A, Z = 4,2 mh, Ω: E = 4 A, Z = 33 mh, Ω: Elecrosaic discharge capabiliy (ESD) : (Human Body Model), : ou o all oher pins shored: acc. M-D883D, mehod 35.7 and ESD assn. sd. S R=.5kΩ; C=pF AS,4 E AS 3,5 ESD npu volage (DC) Curren hrough inpu pin (DC) Curren hrough saus pin (DC) Curren hrough curren sense pin (DC) ±2. ±5. ±4 ma see inernal circui diagrams page 7 C J k ) Supply volages higher han bb(az) require an exernal curren limi for he and saus pins (a 5 Ω resisor in he connecion is recommended). 2) R = inernal resisance of he load dump es pulse generaor 3) oad dump is seup wihou he DUT conneced o he generaor according o O and D 4839 Semiconducor Group Page Jul-2

3 Thermal Characerisics Parameer and Condiions Symbol alues Uni min yp max Thermal resisance chip - case: R hjc K/W juncion - ambien (free air): R hja SMD version, device on PCB 4) : Elecrical Characerisics Parameer and Condiions Symbol alues Uni a Tj = 25 C, bb = 2 unless oherwise specified min yp max oad Swiching Capabiliies and Characerisics On-sae resisance (pin 4 o 6&7) = 5 A Oupu volage drop limiaion a small load currens (pin 4 o 6&7), see page 3 =.5 A T j =25 C: T j =5 C: Tj = C: R ON mω ON(N) m Nominal load curren, O Norm (pin 4 o 6&7) ON =.5, TC = 85 C (O) A Nominal load curren, device on PCB 4) TA = 85 C, Tj 5 C ON.5, (NOM) A Oupu curren (pin 6&7) while disconneced or pulled up, bb=3, =, see diagram page 9; no esed, specified by design Turn-on ime o 9% : Turn-off ime o % : R = 2 Ω, Tj = C Slew rae on o 3%, R = 2 Ω, Tj = C Slew rae off 7 o 4%, R = 2 Ω, Tj = C (high) ma on 25 off µs d /d on. -- /µs -d/d off. -- /µs 4) Device on 5mm*5mm*.5mm epoxy PCB FR4 wih 6cm 2 (one layer, 7µm hick) copper area for bb connecion. PCB is verical wihou blown air. Semiconducor Group Page Jul-2

4 Parameer and Condiions Symbol alues Uni a Tj = 25 C, bb = 2 unless oherwise specified min yp max Operaing Parameers Operaing volage 5) Tj = C: bb(on) Undervolage shudown Tj = C: bb(under) Undervolage resar Tj = C: bb(u rs) Tj =+5 C: 6. Undervolage resar of charge pump see diagram page 2 Tj = C: bb(ucp) Tj = C: Undervolage hyseresis bb(under) bb(under) = bb(u rs) - bb(under) Overvolage shudown Tj = C: bb(over) Overvolage resar Tj = C: bb(o rs) Overvolage hyseresis Tj = C: bb(over) Overvolage proecion 6) Tj =-4 C: bb=4 ma Sandby curren (pin 4) = Tj = C T j = C: T j = 5 C: bb(az) bb(off) Off sae oupu curren (included in bb(off) ) (off) µa =, Tj = C: Operaing curren (Pin 2) 7), = ma µa 5) A supply volage increase up o bb = 4.7 yp wihou charge pump, bb - 2 6) Supply volages higher han bb(az) require an exernal curren limi for he and saus pins (a 5 Ω resisor in he connecion is recommended). See also ON(C) in able of proecion funcions and circui diagram page 8. 7) Add, if >, add, if >5.5 Semiconducor Group Page Jul-2

5 Parameer and Condiions Symbol alues Uni a Tj = 25 C, bb = 2 unless oherwise specified min yp max Proecion Funcions niial peak shor circui curren limi (pin 4 o 6&7) Tj =-4 C: Tj =25 C: Tj =+5 C: Repeiive shor circui shudown curren limi (SCp) (SCr) Tj = Tj (see iming diagrams, page ) A Oupu clamp (inducive load swich off) a = bb - ON(C); = 4 ma, T j =-4 C: T j = C: ON(C) 4 43 Thermal overload rip emperaure T j C Thermal hyseresis T j K Reverse baery (pin 4 o 2) 8) - bb Reverse baery volage drop (ou > bb) = -5 A Tj=5 C: - ON(rev) m A Diagnosic Characerisics Curren sense raio 9), saic on-condiion, =...5, bb(on) = 6.5 )...27, k = / T j = -4 C, = 5 A: k T j = -4 C, =.5 A: T j = C, = 5 A: , T j = C, =.5 A: Curren sense oupu volage limiaion Tj = C =, = 5 A: (lim) Curren sense leakage/offse curren Tj = C =, =, = : () -- µa =5, =, = : (H) -- 5 =5, =, = (shor circui) (SH) -- : ((SH) no esed, specified by design) Curren sense seling ime o saic ±% afer posiive inpu slope, = 5 A, Tj= C (no esed, specified by design) son() µs 8) Requires 5 Ω resisor in connecion. The reverse load curren hrough he inrinsic drain-source diode has o be limied by he conneced load. Noe ha he power dissipaion is higher compared o normal operaing condiions due o he volage drop across he inrinsic drain-source diode. The emperaure proecion is no acive during reverse curren operaion! npu and Saus currens have o be limied (see max. raings page 2 and circui page 8). 9) This range for he curren sense raio refers o all devices. The accuracy of he k can be raised a leas by a facor of wo by maching he value of k for every single device. n he case of curren limiaion he sense curren is zero and he diagnosic feedback poenial is High. See figure 2b, page. ) alid if bb(u rs) was exceeded before. Semiconducor Group Page Jul-2

6 Parameer and Condiions Symbol alues Uni a Tj = 25 C, bb = 2 unless oherwise specified min yp max Curren sense seling ime o % of saic afer negaive inpu slope, = 5 A, Tj= C (no esed, specified by design) Curren sense rise ime (6% o 9%) afer change of load curren = A (no esed, specified by design) soff() -- 3 µs slc() µs Open load deecion volage ) (off-condiion) (O) Tj=-4..5 C: nernal oupu pull down (pin 6 o 2), =5, Tj=-4..5 C R O kω npu and Saus Feedback 2) npu resisance R 3, 4,5 7, kω see circui page 7 npu urn-on hreshold volage Tj = C: (T+) npu urn-off hreshold volage Tj = C: (T-) npu hreshold hyseresis (T) Off sae inpu curren (pin 3), =.4 Tj = C (off) -- 5 µa On sae inpu curren (pin 3), = 5 Tj = C (on) µa Delay ime for saus wih open load afer npu neg. slope (see diagram page 2) d( O3) µs Saus delay afer posiive inpu slope (no esed, specified by design) Tj= C: don() µs 5.4 Saus delay afer negaive inpu slope (no esed, specified by design) Tj= C: doff() µs Saus oupu (open drain) Zener limi volage T j = C, = +.6 ma: (high) low volage T j = C, = +.6 ma: T j = +5 C, = +.6 ma: (low) Saus leakage curren, = 5, Tj= C: (high) µa ) Exernal pull up resisor required for open load deecion in off sae. 2) f a ground resisor R is used, add he volage drop across his resisor. Semiconducor Group Page Jul-2

7 Truh Table Normal operaion Currenlimiaion Shor circui o Overemperaure Shor circui o bb Open load Undervolage Overvolage Negaive oupu volage clamp npu Oupu Saus Curren Sense level level level H H H nominal H H H H H H 3 ) H H H H H 4) H H <nominal 5) 6 ) H ( 7) ) H H H H H H H = "ow" evel X = don care Z = high impedance, poenial depends on exernal circui H = "High" evel Saus signal afer he ime delay shown in he diagrams (see fig 5. page...2) Terms npu circui (ESD proecion) bb 3 5 bb 4 bb PROFET ON R ESD-ZD R The use of ESD zener diodes as volage clamp a DC condiions is no recommended. 3) The volage drop over he power ransisor is bb - >yp.3. Under his condiion he sense curren is zero 4) An exernal shor of oupu o bb, in he off sae, causes an inernal curren from oupu o ground. f R is used, an offse volage a he and pins will occur and he low signal may be errorious. 5) ow ohmic shor o bb may reduce he oupu curren and herefore also he sense curren. 6) Power Transisor off, high impedance 7) wih exernal resisor beween pin 4 and pin 6&7 Semiconducor Group Page Jul-2

8 Saus oupu Overvolage proecion of logic par bb R (ON) R R Z2 ESD- ZD R ogic ESD-Zener diode: 6. yp., max 5 ma; R (ON) < 44 Ω a.6 ma, The use of ESD zener diodes as volage clamp a DC condiions is no recommended. R Z R Curren sense oupu Signal Z = 6. yp., Z2 = 47 yp., R = 4 kω yp, R = 5 Ω, R = 5 kω, R = kω, R = 5 kω, Reverse baery proecion bb ESD-ZD R R R ogic ESD-Zener diode: 6. yp., max 4 ma; R = kω nominal R Z Power nverse Diode nducive and overvolage oupu clamp R + bb R R Z ON Signal Power The load R is inverse on, emperaure proecion is no acive R = 5 Ω, R = 4 kω yp, R 5 Ω, R 2 Ω, R 5 Ω, ON clamped o 47 yp. PROFET Open-load deecion OFF-sae diagnosic condiion: > 3 yp.; low bb R EXT OFF Ou ogic R O Signal Semiconducor Group Page Jul-2

9 disconnec bb disconnec wih charged exernal inducive load bb 3 5 bb 4 bb PROFET high bb PROFET D R Any kind of load. n case of npu=high is - (T+). Due o >, no = low signal available. disconnec wih pull up bb bb PROFET 2 Any kind of load. f > - (T+) device says off Due o >, no = low signal available. bb disconnec wih energized inducive load 6 7 bb f oher exernal inducive loads are conneced o he PROFET, addiional elemens like D are necessary. nducive oad swich-off energy dissipaion = bb E bb 3 5 bb PROFET Energy sored in load inducance: 4 2 E AS 6 7 E oad E E R 4 E = /2 2 high 3 5 bb PROFET While demagneizing load inducance, he energy dissipaed in PROFET is E AS = E bb + E - E R = ON(C) i () d, wih an approximae soluion for R > Ω: E AS = 2 R bb + (C) ) ln R (+ ( (C) ) bb Normal load curren can be handled by he PROFET iself. Semiconducor Group Page Jul-2

10 Timing diagrams Figure a: Swiching a resisive load, change of load curren in on-condiion: Figure 2a: Swiching a lamp don() doff() on off slc() slc() oad oad 2 son() soff() The sense signal is no valid during seling ime afer urn or change of load curren. Figure 2b: Swiching a lamp wih curren limi: Figure b: bb urn on: bb proper urn on under all condiions Semiconducor Group Page 999-Jul-2

11 Figure 2c: Swiching an inducive load: Figure 4a: Overemperaure: Rese if T j <T j TJ Figure 3a: Shor circui: shu down by overemperaure, rese by cooling Figure 5a: Open load: deecion in ON-sae, open load occurs in on-sae (SCp) (SCr) normal open normal Heaing up may require several milliseconds, depending on exernal condiions (SCp) = 5 A yp. increases wih decreasing emperaure. Semiconducor Group Page 999-Jul-2

12 Figure 5b: Open load: deecion in ON- and OFF-sae (wih REXT), urn on/off o open load Figure 6b: Undervolage resar of charge pump on ON(C) d( O3) off-sae on-sae bb(over) off-sae bb(u rs) bb(o rs) open load bb(u cp) bb(under) bb charge pump sars a bb(ucp) =4.7 yp. Figure 6a: Undervolage: Figure 7a: Overvolage: no defined bb bb(under) bb(u cp) bb(u rs) bb ON(C) bb(over) bb(o rs) Semiconducor Group Page Jul-2

13 Figure 8a: Curren sense versus load curren: Figure 9a: Oupu volage drop versus load curren:.3 [ma] [A] 6 [].2.. ON ON(N) R ON [A] 8 Figure 8b: Curren sense raio 8 : 5 k 5 [A] This range for he curren sense raio refers o all devices. The accuracy of he k can be raised a leas by a facor of wo by maching he value of k for every single device. Semiconducor Group Page Jul-2

14 Package and Ordering Code All dimensions in mm Sandard (=saggered): P-TO22-7- Sales code Ordering code BTS64S2 Q676-S637-A5 Sraigh: P-TO Sales Code Ordering code BTS64S2 S Q676-S637-A7 ± ± ) A.27 ±. 4.4 ± ± ) A B.27 ± ± ±.3 ) 3.4 ± ±.2 7± ±.3 ) 3.4 ± ±.2 C ±.3.2 ±.3 7x.6 ±..25 M A C 3.7± ±.4.5 ±. 3.9 ±.4 C ±.5 3 ±.5 7x.6 ±..25 M A B C ±. ) Typical All meal surfaces in plaed, excep area of cu. ) Typical All meal surfaces in plaed, excep area of cu. SMD: P-TO (5) Sales code Ordering code 9.25 ±.2 ±.3 7x.6±. ) ± ± ) A 8 ).3 ± x ±.5 (ape&reel) BTS64S2 G Q676-S637-A6.27 ±. 8 max..25 M A B. Typical All meal surfaces in plaed, excep area of cu. B 2.7± ±..5 Published by Siemens AG, Bereich Bauelemene, errieb, Produk-nformaion, Balansraße 73, D-854 München Siemens AG 999. All Righs Reserved As far as paens or oher righs of hird paries are concerned, liabiliy is only assumed for componens per se, no for applicaions, processes and circuis implemened wihin componens or assemblies. The informaion describes a ype of componen and shall no be considered as warraned characerisics. The characerisics for which SEMENS grans a warrany will only be specified in he purchase conrac. Terms of delivery and righs o change design reserved. For quesions on echnology, delivery and prices please conac he Offices of Semiconducor Group in Germany or he Siemens Companies and Represenaives woldwide (see address lis). Due o echnical requiremens componens may conain dangerous subsances. For informaion on he ype in quesion please conac your neares Siemens Office, Semiconducor Group. Siemens AG is an approved CECC manufacurer. Packing: Please use he recycling operaors known o you. We can also help you - ge in ouch wih your neares sales office. By agreemen we will ake packing maerial back, if i is sored. You mus bear he coss of ranspor. For packing maerial ha is reurned o us unsored or which we are no obliged o accep we shall have o invoice you for any coss incurred. Componens used in life-suppor devices or sysems mus be expressly auhorised for such purpose! Criical componens 9) of he Semiconducor Group of Siemens AG, may only be used in life supporing devices or sysems 2) wih he express wrien approval of he Semiconducor Group of Siemens AG. 9) A criical componen is a componen used in a life-suppor device or sysem whose failure can reasonably be expeced o cause he failure of ha life-suppor device or sysem, or o affec is safey or effeciveness of ha device or sysem. 2) ife suppor devices or sysems are inended (a) o be implaned in he human body or (b) suppor and/or mainain and susain and/or proec human life. f hey fail, i is reasonably o assume ha he healh of he user or oher persons may be endangered. Semiconducor Group Page Jul-2

Smart Sense High-Side Power Switch For Industrial Applications

Smart Sense High-Side Power Switch For Industrial Applications Smar Sense High-Side Power Swich For ndusrial Applicaions Feaures Shor circui proecion Curren limiaion Proporional load curren sense CMOS compaible inpu Open drain diagnosic oupu Fas demagneizaion of inducive