Features / Advantages: Applications: Package: Y4

Transcription

1 IGBT (NPT) Module CES = x 1 I C = 9 =. CE(sa) Phase leg Par number MII Backside: isolaed 7 3 Feaures / dvanages: pplicaions: Package: Y NPT IGBT echnology low sauraion volage low swiching losses swiching frequency up o 3 khz square RBSO, no lach up high shor circui capabiliy posiive emperaure coefficien for easy parallelling MOS inpu, volage conrolled ulra fas free wheeling diodes C moor drives Solar inverer Medical equipmen Uninerrupible power supply ir-condiioning sysems Welding equipmen Swiched-mode and resonan-mode power supplies Inducive heaing, cookers Pumps, Fans Isolaion olage: 3 ~ Indusry sandard ouline RoHS complian Soldering pins for PCB mouning Base plae: DCB ceramic Reduced weigh dvanced power cycling IXYS reserves he righ o change limis, condiions and dimensions. 13 IXYS all righs reserved Daa according o IEC 77and per semiconducor unless oherwise specified 131a

2 IGBT Symbol CES GES GEM 8 collecor curren Condiions T C = C T = 8 C Raings min. yp. max. 1 P o oal power dissipaion T C = C 37 W CE(sa) collecor emier sauraion volage = ; GE= 1 T J = C..7 T J = 1 C.7 GE(h) gae emier hreshold volage = m; GE= CE T J = C... ES collecor emier leakage curren CE = CES; GE = T J = C m T = 1 C m I GES RBSO Definiion collecor emier volage max. DC gae volage max. ransien gae emier volage gae emier leakage curren = ± GE T = C J QG(on) oal gae charge CE = ; GE = 1 ; = nc r f E E d(on) d(off) on off M SCSO SC urn-on delay ime 1 ns curren rise ime 7 ns inducive load T J = 1 C urn-off delay ime ns CE = ; = curren fall ime 7 ns GE = ±1 ; R G= Ω urn-on energy per pulse 7. mj urn-off energy per pulse. mj reverse bias safe operaing area GE = ±1 ; R G= Ω T J = 1 C = 1 CEmax 1 shor circui safe operaing area shor circui duraion CEmax = 1 = 1 ; = ±1 CE GE C T = 1 C I SC shor circui curren R G= Ω; non-repeiive 18 R hjc hermal resisance juncion o case.33 K/W R hch hermal resisance case o heasink.33 K/W J J ± ±3 9 1 Uni n µs Diode RRM I F max. repeiive reverse volage T = C J forward curren T = C I F 8 T C = 8 C F forward volage I = T = C F C J T = 1 C J I R reverse curren R = RRM T J = C. m T J = 1 C 1 m Qrr reverse recovery charge 3. µc R = IRM max. reverse recovery curren -di F /d = /µs T J = 1 C rr reverse recovery ime ns I F= ; GE= E rec reverse recovery energy 1 mj R hjc hermal resisance juncion o case. K/W R hch hermal resisance case o heasink. K/W IXYS reserves he righ o change limis, condiions and dimensions. 13 IXYS all righs reserved Daa according o IEC 77and per semiconducor unless oherwise specified 131a

3 Package Y Raings Symbol Definiion Condiions min. yp. max. Uni I RMS RMS curren per erminal 3 T J virual juncion emperaure - 1 C T op operaion emperaure - 1 C T sg sorage emperaure - 1 C Weigh M D M T d Spp/pp d Spb/pb ISOL mouning orque. erminal orque. creepage disance on surface sriking disance hrough air isolaion volage = 1 second = 1 minue erminal o erminal erminal o backside / Hz, RMS; I ISOL 1 m g Nm Nm mm mm ssembly Line Dae Code Par No. Circui Diagram yyww YYYYYYYYYYY D Marix Ordering Sandard Par Number Marking on Produc Delivery Mode Quaniy Code No. MII7-13 MII7-13 Box 73 Equivalen Circuis for Simulaion * on die level T J = 1 C I IGBT Diode R max hreshold volage R max slope resisance * mω IXYS reserves he righ o change limis, condiions and dimensions. 13 IXYS all righs reserved Daa according o IEC 77and per semiconducor unless oherwise specified 131a

4 Oulines Y.8 x. 7 ±. 3 ± M Ø. 9 ±.3 8 ±. M x1 3 ±. 1 ± Ø ±.1 8 ±.1 17 ±. General olerances: DIN ISO 78-T1-m 3 ±. ± IXYS reserves he righ o change limis, condiions and dimensions. 13 IXYS all righs reserved Daa according o IEC 77and per semiconducor unless oherwise specified 131a

5 IGBT T J = C GE = T J =1 C GE = CE = T J = C CE [] Fig. 1 Typ. oupu characerisics CE [] Fig. Typ. oupu characerisics GE [] Fig. 3 Typ. ransfer characerisics GE 1 [] CE = = 18 1 d(on) r CE = GE =±1 R G = T J =1 C CE = GE =±1 R G = T J =1 C d(off) f Q G [nc] Fig. Typ. urn-on gae charge Fig.Typ.urnonenergy&swiching imesversuscollecorcurren Fig. Typ. urn off energy & swiching imes versus collecor curren..3 1 CE = GE =±1 = T J =1 C d(on) CE = GE =±1 = T J = 1 C d(off) 1 1 Z hjc. [K/W] single pulse 1 r [s] Fig. 1 Typical ransien hermal impedance 8 1 R G [ ] Fig.9 Typ.urnonenergy&swiching imes versus gae resisor 8 1 R G [ ] Fig. 9 Typ. urn off energy & swiching imes versus gae resisor IXYS reserves he righ o change limis, condiions and dimensions. 13 IXYS all righs reserved Daa according o IEC 77and per semiconducor unless oherwise specified 131a

6 Diode Z hjc I F 9. single pulse [K/W] T J = 1 C. 3 T J = C F [] Fig. 1 Typ. Forward curren vs. F [s] Fig. Typ. ransien hermal impedance juncion o case IXYS reserves he righ o change limis, condiions and dimensions. 13 IXYS all righs reserved Daa according o IEC 77and per semiconducor unless oherwise specified 131a