Item Symbol Unit MBM1200E17D Collector Emitter Voltage V CES V 1,700 Gate Emitter Voltage V GES V ±20 Collector Current. DC I C 1,200 A 1ms I Cp
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1 MBM1E17D Silicon N-channel IGBT 1. FEATURES High speed, low loss IGBT module. Low driving power due o low inpu capaciance MOS gae. Low noise due o ulra sof fas recovery diode. High reliabiliy, high durabiliy module. High hermal faigue durabiliy (Al-SiC base plae.) (dela Tc=7 C, N>3,cycles) OUTLINE DRAWING Spec.No.IGBT-SP-53 R7 (P1/9) Uni in mm CIRCUIT DIAGRAM E1 E1 C C G1 G C1 E. ABSOLUTE MAXIMUM RATINGS (Tc=5 o C ) C1 E Weigh: 9(g) Iem Symbol Uni MBM1E17D Collecor Emier Volage V CES V 1,7 Gae Emier Volage V GES V ± Collecor Curren DC I C 1, A 1ms I Cp, Forward Curren DC I F 1, A 1ms I FM, Juncion Temperaure T j o C - ~ +15 Sorage Temperaure T sg o C - ~ +15 Isolaion Volage V ISO V RMS, (AC 5Hz, 1 minue) Terminals (M) - (1) Screw Torque Terminals (M8) N m 15 () Mouning (M6) - 6 (3) Noes: Recommended Value (1)1.8±. N m, () N m, (3) 5.5±.5N m 3. ELECTRAL CHARACTERISTS Iem Symbol Uni Min. Typ. Max. Tes Condiions Collecor Emier Cu-Off Curren I CES ma V CE=1,7V, V GE=V, Tj=5 o C V CE=1,7V, V GE=V, Tj=15 o C Gae Emier Leakage Curren I GES na V GE=±V, V CE=V, Tj=5 o C Collecor Emier Sauraion Volage V CE(sa) V I C=1,A, V GE=15V, Tj=15 o C Gae Emier Threshold Volage V GE(TO) V V CE=1V, I C=1mA, Tj=5 o C Inpu Capaciance C ies nf Inernal Gae Resisance Rg(in) Ω V CE=1V, V GE=V, f=1khz, Tj=5 o C Rise Time r V CC=9V, Ic=1,A Turn On Time on L=1nH,=1nF () Swiching Times µs Fall Time f R G=1.5Ω () V Turn Off Time off GE=±15V, Tj=15 o C Peak Forward Volage Drop V FM V IF=1,A, V GE=V, Tj=15 o C Reverse Recovery Time rr µs V CC=9V, Ic=IF=1,A, Turn On Loss E on(1%) J/P L=1nH,=1nF () Turn Off Loss E off(1%) J/P R G=1.5Ω () V Reverse Recovery Loss E rr(1%) J/P -..6 GE=±15V, Tj=15 o C Noes:() R G and C GE value is a es condiion value for evaluaion, no recommended value. Please, deermine he suiable R G value by measuring swiching behaviors. * Please conac our represenaives a order. * For improvemen, specificaions are subjec o change wihou noice. * For acual applicaion, please confirm his spec shee is he newes revision.
2 MBM1E17D Spec.No.IGBT-SP-53 R7 (P/9). THERMAL CHARACTERISTS Iem Symbol Uni Min. Typ. Max. Tes Condiions Thermal Resisance IGBT Rh(j-c) - -. K/W Juncion o case FWD Rh(j-c) Conac Thermal Impedance Rh(c-f) K/W Case o fin. (par 1 arm) Thermal grease applied. Thickness 1µm, Thermal conduciviy of grease: 1W/mK 5. CIRCUIT DIAGRAM E1 C E1 C G1 C1 G E C1 E
3 MBM1E17D Spec.No.IGBT-SP-53 R7 (P3/9) 6. CHARACTERISTS CURVE 6.1 STAT CHARACTERISTS VGE=15V 13V Tc= V 18 VGE=15V 13V 11V Collecor Curren (A) V Collecor Curren (A) V Collecor-Emier Volage (V) Collecor Curren vs.collecor o Emier Volage Collecor-Emier Volage (V) Collecor Curren vs.collecor o Emier Volage 18 Tj=5 Tj= Forward Curren IF(A) Forward Volage VF(V) Forward Volage of free-wheeling diode
4 MBM1E17D Spec.No.IGBT-SP-53 R7 (P/9) 6. DYNAM CHARACTERISTS 6..1 CIRCUIT Ls=1nH Vcc Rg(on/off)=1.5/1.5Ω L LOAD Vce L VL Ic VL Ls= dic ( d ) =L G/D Cge=1nF Definiion of Ls 6.. WAVEFORM DEFINITION Vce 9% 1% 1% 1 r on 3 1% Ic Vge Ic Vge 1% 9% 5 7 f off 9% 8 1% 6 Vce -Ic IF.1Vce Irm 9 rr 11 Vce.5Irm.1IF 1 1 Eon(1%)= Ic Vce d 3 8 Eoff(1%)= Ic Vce d 7 1 Err(1%)= IF Vce d 11 Eon(Full)= Ic Vce d 1 6 Eoff(Full)= Ic Vce d 5 1 Err(Full)= IF Vce d 9
5 MBM1E17D Spec.No.IGBT-SP-53 R7 (P5/9) 6..3 DEPENDENCE OF CURRENT Turn-on Loss Eon (J/pulse).3 Condiions Vcc=9V L=1nH RG=1.5Ω GE=1nF Inducive Load di/d Eon(Full). Eon(1%).1 9% 6 Turn-on di/d (ka/µs) Turn-off Loss Eoff (J/pulse) Condiions Vcc=9V L=1nH RG=1.5Ω GE=1nF Inducive Load dv/d 9% 1% 1% VGE % Eoff(1%)= d 8 7 Eoff(full)= d 6 (.9 -.1) dv/d= 1-8 Eoff(Full) Eoff(1%) 5 3 Turn-off dv/d (kv/µs) 1% 5 5 1% VGE Eon(1%)= d Eon(full)= 3 d 1 (.9 -.1) di/d= Collecor Curren Ic (A) Turn-on Loss, di/d vs. Collecor Curren Collecor Curren Ic (A) Turn-off Loss, dv/d vs. Collecor Curren Reverse Recovery Loss Err (J/pulse) Condiions Vcc=9V L=1nH RG=1.5Ω GE=1nF Inducive Load dv/d Err(full).1 IF.9 IRM 1 Err(1%)= d 13 1 Err(full)= d 11 (.9-.1) dv/d= IF Err(1%) Reverse Recovery dv/d (kv/µs) Swiching Time on,r,off,f,rr ( µs ) Condiions Vcc=9V L=1nH RG=1.5Ω GE=1nF Inducive Load off on rr r f Forward Curren IF (A) Recovery Loss, dv/d vs. Forward Curren Collecor Curren (A) Swiching Time vs. Collecor Curren
6 MBM1E17D Spec.No.IGBT-SP-53 R7 (P6/9) 6.. DEPENDENCE OF RG. Condiions Vcc=9V =1A L=1nH GE=1nF Inducive Load di/d Eon(Full) Condiions Vcc=9V =1A L=1nH GE=1nF Inducive Load 5.3 Turn-on Loss Eon (J/pulse). Eon(1%) 9% Turn-on di/d (ka/µs) Turn-off Loss Eoff (J/pulse).6. Eoff(Full) dv/d Eoff(1%) 9% 3 Turn-off dv/d (kv/µs).1 1% 1% VGE. VGE 1% 1% Eon(1%)= d 3 Eon(full)= d 1 (.9-.1) di/d= Gae Resisance RG (Ω) Turn-on Loss, di/d vs. Gae Resisance. 9 Eoff(1%)= d 8 7 Eoff(full)= d 6 (.9 -.1) dv/d= Gae Resisance RG (Ω) Turn-off Loss, dv/d vs. Gae Resisance Condiions Vcc=9V IF=1A L=1nH GE=1nF Inducive Load dv/d 7 Reverse Recovery Loss Err (J/pulse) Err(Full) Err(1%).9.1 IRM.1IF Reverse Recovery dv/d (kv/µs).1. 1 Err(1%)= d 13 1 Err(full)= d 11 (.9-.1) dv/d= Gae Resisance RG (Ω) Recovery Loss, dv/d vs. Gae Resisance IF
7 MBM1E17D Spec.No.IGBT-SP-53 R7 (P7/9) 7. PACKAGE OUTLINE DRAWING Weigh: 9g
8 MBM1E17D Spec.No.IGBT-SP-53 R7 (P8/9) 8. Thermal Impedance 8.1 TRANSIENT THERMAL IMPEDANCE.1 Transien hermal impedance : Zh(j-c) (K/W).1.1 FWD IGBT Time : (s) Transien Thermal Impedance Curve 9. Negaive environmenal impac maerial Please noe he following maerials are conained in he produc in order o keep characerisic and reliabiliy level. Maerial Lead (Pb) and is compounds Arsenic and is compounds Conained par Solder Si chip
9 MBM1E17D Spec.No.IGBT-SP-53 R7 (P9/9) HITACHI POWER SEMONDUCTORS Noices 1. The informaion given herein, including he specificaions and dimensions, is subjec o change wihou prior noice o improve produc characerisics. Before ordering, purchasers are advised o conac Hiachi sales deparmen for he laes version of his daa shees.. Please be sure o read "Precauions for Safe Use and Noices" in he individual brochure before use. 3. In cases where exremely high reliabiliy is required(such as use in nuclear power conrol, aerospace and aviaion, raffic equipmen, life-suppor-relaed medical equipmen, fuel conrol equipmen and various kinds of safey equipmen), safey should be ensured by using semiconducor devices ha feaure assured safey or by means of users fail-safe precauions or oher arrangemen. Or consul Hiachi s sales deparmen saff.. In no even shall Hiachi be liable for any damages ha may resul from an acciden or any oher cause during operaion of he user s unis according o his daa shees. Hiachi assumes no responsibiliy for any inellecual propery claims or any oher problems ha may resul from applicaions of informaion, producs or circuis described in his daa shees. 5. In no even shall Hiachi be liable for any failure in a semiconducor device or any secondary damage resuling from use a a value exceeding he absolue maximum raing. 6. No license is graned by his daa shees under any paens or oher righs of any hird pary or Hiachi, Ld. 7. This daa shees may no be reproduced or duplicaed, in any form, in whole or in par, wihou he expressed wrien permission of Hiachi, Ld. 8. The producs (echnologies) described in his daa shees are no o be provided o any pary whose purpose in heir applicaion will hinder mainenance of inernaional peace and safey no are hey o be applied o ha purpose by heir direc purchasers or any hird pary. When exporing hese producs (echnologies), he necessary procedures are o be aken in accordance wih relaed laws and regulaions. For inquiries relaing o he producs, please conac neares overseas represenaives which is locaed Inquiry porion on he op page of a home page. Hiachi power semiconducor home page address hp://
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