ABSOLUTE MAXIMUM RATINGS (Tc=25 o C) Item Symbol Unit MDM500H65E2. 6,500 VRRM Voltage
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1 MDM5H65E2 FEATURES Low noise recovery: Ulra sof fas recovery diode. High reverse recovery capabiliy: Super HiRC Srucure. High reliabiliy, high durabiliy diodes. Isolaed hea sink (erminal o base). Spec.No.SR2-SP-97 R5 P1 CIRCUIT DIAGRAM C(K) C(K) E(A) E(A) ABSOLUTE MAXIMUM RATINGS (Tc=25 o C) Iem Symbol Uni MDM5H65E2 Tj=125 Repeiive Peak Reverse C 6,5 VRRM Volage Tj=25 o C V 6,5 Tj=-4 o C 6, Forward Curren DC 5 A 1ms M 1, Juncion Temperaure Tj o C -4 ~ +125 Sorage Temperaure Tsg o C -5 ~ +125 Isolaion Tes Terminals-base VISO 1,2 (AC 1 minue) VRMS Volage Terminal 1-Terminal 2 VISO T-T 1,2 (AC 1 minue) Screw Torque Terminals (M8) - N m 1 (1) Mouning (M6) - 6 (2) Noes: (1) Recommended Value 9 1N m (2) Recommended Value 5.5.5N m ELECTRICAL CHARECTERISTICS Iem Symbol Uni Min. Typ. Max. Tes Condiions Repeiive Reverse Curren IRRM ma VAK=6,5V, Tj=125 o C =5A, Tj=25 Forward Volage Drop VF V o C =5A, Tj=125 o C Reverse Recovery Time rr s VCC=3,6V, =5A, L=2nH Err(1%) J/P Reverse Recovery Loss Tj=125 o C Rg=12 (3) Err(full) J/P PACKAGE CHARECTERISTICS Iem Symbol Uni Min. Typ. Max. Tes Condiions Terminal Resisance RCE m per arm Terminal Sray Inducance LsCE nh per arm Thermal Impedance Rh(j-c) K/W Juncion o case Comparaive racking index CTI Case o f fin ( grease=1w/(m K), Conac Thermal Impedance Rh(c-f) K/W Hea-sink flaness 5um) Noes:(3) Couner arm; MBN5H65E2 VGE=+/-15V RG value is he es condiion s value for evaluaion of he swiching imes, no recommended value. Please, deermine he suiable RG value afer he measuremen of swiching waveforms (overshoo volage, ec.) wih appliance mouned. * Please conac our represenaives a order. * For improvemen, specificaions are subjec o change wihou noice. * For acual applicaion, please confirm his spec shee is he newes revision.
2 MDM5H65E2 Spec.No.SR2-SP-97 R5 P2 Ls DUT LLOAD Vcc Rg G/D MBN75H65E2 MBN5H65E2 Fig.1 Swiching es circui L VL Ic Ls= VL dic ( d ) =L Fig.2 Definiion of sray inducance.1 rr Fig.3 Definiion of swiching loss Err(1%)= d 4 Err(Full)= d 3
3 Reverse Recovery Loss, Err (J/pulse) Reverse Recovery Time, rr (μs) Forward Curen, (A) DIODE MODULE MDM5H65E2 STATIC CHARACTERISTICS Spec.No.SR2-SP-97 R5 P3 1 Tj=25 o C 75 Tj=125 o C Forward Volage, VF(V) DYNAMIC CHARACTERISTICS 4 Condiions VGE=±15V Rg(on)=12Ω Vcc=36V Ls 2nH Tj=125 Inducive load Condiions VGE=±15V Rg(on)=12Ω Vcc=36V Ls 2nH Tj=125 Inducive load.1 3 rr rr Err(1%)= d 11 1 Err(Full)= d 9 Err(full) Err(1%)= d 11 1 Err(Full)= d Err(1%) y = -2E-6x x , Forward Curren, (A) Recovery Loss vs.forward Curren , Forward Curren, (A) Reverse Recovery Time vs.forward Curren
4 - [A] Reverse Recovery Loss, Err (J/pulse) DIODE MODULE MDM5H65E2 Spec.No.SR2-SP-97 R5 P4 4 Condiions VGE=±15V =5A Vcc=36V Ls 2nH Tj=125 Inducive load.1 3 rr Err(1%)= d 11 1 Err(Full)= d 9 2 Err(full) Err(1%) Gae Resisance, RG (Ω) Recovery Loss vs.gae Resisance RecSOA Condiions: Ls 2nH, Vcc 44V, 1A, VGE=-15V, Rg(on) of across IGBT 12, VGE of across IGBT =±15V, -4 o C Tc 125 o C, Conducion pulse widh of diode 3 s Anode-cahode volage [V](a chip level) RecSOA
5 MDM5H65E2 Spec.No.SR2-SP-97 R5 P5 TRANSIENT THERMAL IMPEDANCE Transien hermal impedance : Zh(j-c) [K/W] Maximum Value Time : [s] Transien Thermal Impedance Curve Curve approximaion model Zh = Σ rh[n]*(1-exp(-/τh[n])) n Uni τ h[n] 1.64E E E E-4 sec rh[n,igbt] 1.61E-2 5.1E E E-4 K/W
6 MDM5H65E2 OUTLINE DRAWING Spec.No.SR2-SP-97 R5 P6 Uni in mm /-.5 Weigh: 15(g) Maerial declaraion Please noe he following maerials are conained in he produc, in order o keep produc characerisic and reliabiliy level. Maerial Lead (Pb) and is compounds Conained par Solder
7 MDM5H65E2 Spec.No.SR2-SP-97 R5 P7 HITACHI POWER SEMICONDUCTORS Noices 1. The informaion given herein, including he specificaions and dimensions, is subjec o change wihou prior noice o improve produc characerisics. Before ordering, purchasers are advised o conac Hiachi sales deparmen for he laes version of his daa shees. 2. Please be sure o read "Precauions for Safe Use and Noices" in he individual brochure before use. 3. In cases where exremely high reliabiliy is required (such as use in nuclear power conrol, aerospace and aviaion, raffic equipmen, life-suppor-relaed medical equipmen, fuel conrol equipmen and various kinds of safey equipmen), safey should be ensured by using semiconducor devices ha feaure assured safey or by means of users fail-safe precauions or oher arrangemen. Or consul Hiachi s sales deparmen saff. 4. In no even shall Hiachi be liable for any damages ha may resul from an acciden or any oher cause during operaion of he user s unis according o his daa shees. Hiachi assumes no responsibiliy for any inellecual propery claims or any oher problems ha may resul from applicaions of informaion, producs or circuis described in his daa shees. 5. In no even shall Hiachi be liable for any failure in a semiconducor device or any secondary damage resuling from use a a value exceeding he absolue maximum raing. 6. No license is graned by his daa shees under any paens or oher righs of any hird pary or Hiachi, Ld. 7. This daa shees may no be reproduced or duplicaed, in any form, in whole or in par, wihou he expressed wrien permission of Hiachi, Ld. 8. The producs (echnologies) described in his daa shees are no o be provided o any pary whose purpose in heir applicaion will hinder mainenance of inernaional peace and safey no are hey o be applied o ha purpose by heir direc purchasers or any hird pary. When exporing hese producs (echnologies), he necessary procedures are o be aken in accordance wih relaed laws and regulaions. For inquiries relaing o he producs, please conac neares overseas represenaives ha is locaed Inquiry porion on he op page of a home page. Hiachi power semiconducor home page address hp://
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