5STF 28H2060. Fast Thyristor. VDRM, VRRM = V High operational capability. ITAV = A Optimized turn-off parameters
|
|
- Beatrix Elliott
- 5 years ago
- Views:
Transcription
1 5STF 28H26 5STF 28H26 Fas Thyrisor Properies Key Parameers Amplifying gae VDRM, VRRM = 2 V High operaional capabiliy ITAV = A Opimized urn-off parameers ITSM = 46.5 ka VTO = V Applicaions rt =.13 m Power swiching applicaions q = 6 µs Types V RRM, V DRM 5STF 28H26 2 V Condiions: T j = C, half sine waveform, f = 5 Hz, noe 1 Mechanical Daa F m Mouning force 5 ± 5 kn m Weigh.93 kg D S D a Surface creepage disance Air srike disance 36 mm 15 mm Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, Praha 4, Czech Republic el.: , hp:// TS - TR/311/12e May-16 1 of 1
2 5STF 28H26 Maximum Raings Maximum Limis Uni V RRM V DRM Repeiive peak reverse and off-sae volage 2 V T j = C, noe 1 I TRMS I TAVm I TSM I 2 (di T/d) cr (dv D/d) cr RMS on-sae curren T c = 7 C, half sine waveform, f = 5 Hz Average on-sae curren T c = 7 C, half sine waveform, f = 5 Hz Peak non-repeiive surge half sine pulse, V R = V Limiing load inegral half sine pulse, V R = V Criical rae of rise of on-sae curren I T = I TAVm, half sine waveform, f = 5 Hz, V D = 2/3 V DRM, r =.3 µs, I GT = 2 A Criical rae of rise of off-sae volage V D = 2/3 V DRM p = 1 ms p = 8.3 ms p = 1 ms p = 8.3 ms A A A A 2 s 8 A/µs 1 V/µs P GAVm Maximum average gae power losses 3 W I FGM Peak gae curren 1 A V FGM Peak gae volage 12 V V RGM Reverse peak gae volage 1 V T jmin - T jmax Operaing emperaure range C T sgmin - T sgmax Sorage emperaure range C Unless oherwise specified T j = 125 C Noe 1: De-raing facor of.13% V RRM or V DRM per C is applicable for T j below 25 C TS - TR/311/12e May-16 2 of 1
3 5STF 28H26 Characerisics Value Uni min. yp. max. V TM Maximum peak on-sae volage I TM = 2 A I TM = 4 A V V T Threshold volage V r T I DM I RM gd q1 q2 Q rr I rrm Slope resisance I T1 = A, I T2 = A Peak off-sae curren V D = V DRM Peak reverse curren V R = V RRM Delay ime T j = 25 C, V D =.4 V DRM, I TM = I TAVm, r =.3 µs, I GT = 2 A Turn-off ime I T = 1 A, di T/d = -5 A/µs, V R = 1 V, V D = 2/3 V DRM, dv D/d = 5 V/µs Turn-off ime I T = 1 A, di T/d = -25 A/µs, V R = 1 V, V D = 2/3 V DRM, dv D/d = 4 V/µs Recovery charge he same condiions as a q1 Reverse recovery curren he same condiions as a q1.13 m 15 ma 15 ma 2. µs 6. µs 8. µs 24 µc 315 A I H Holding curren T j = 25 C T j = 125 C I L Laching curren T j = 25 C T j = 125 C ma ma V GT Gae rigger volage V D = 12V, I T = 4 A T j = - 4 C T j = 25 C T j = 125 C V I GT Gae rigger curren V D = 12V, I T = 4 A T j = - 4 C T j = 25 C T j = 125 C ma Unless oherwise specified T j = 125 C TS - TR/311/12e May-16 3 of 1
4 Transien hermal impedance juncion o case Z hjc ( K/kW ) 5STF 28H26 Thermal Parameers Value Uni R hjc R hch Thermal resisance juncion o case double side cooling anode side cooling 16. cahode side cooling 26.5 Thermal resisance case o heasink double side cooling single side cooling K/kW 3. K/kW Transien Thermal Impedance Analyical funcion for ransien hermal impedance Z hjc 5 i 1 R (1 exp( / )) Condiions: F m = 5 ± 5 kn, Double side cooled i Correcion for periodic waveforms 18 sine: add 1. K/kW 18 recangular: add 1. K/kW 12 recangular: add 1.5 K/kW 6 recangular: add 3. K/kW i i i ( s ) Ri( K/kW ) Square wave pulse duraion d ( s ) Fig. 2 Dependence ransien hermal impedance juncion o case on square pulse TS - TR/311/12e May-16 4 of 1
5 I T ( A ) 5STF 28H26 On-Sae Characerisics T j = 125 C Analyical funcion for on-sae characerisics: V T A B I T C I T D ln( I 1) T Tj ( C ) 125 A B.8 C.194 D V T ( V ) Fig. 3 Maximum on-sae characerisics Gae Trigger Characerisics VG ( V ) 6 5 VG ( V ) V GTmax 4-4 C 1 5 µs C 8 1 ms 6 I GTmax C 4 1 ms VGTmin I G ( A ) I GTmin I G ( A ) Fig. 4 Gae rigger characerisics Fig. 5 Maximum peak gae power loss TS - TR/311/12e May-16 5 of 1
6 I TSM ( ka ) i 2 d (1 6 A 2 s) I TSM ( ka ) 5STF 28H26 Surge Characerisics I TSM V R = V 45 i 2 d V R.5 V DRM ( ms ) Number n of cycles a 5 Hz Fig. 6 Surge on-sae curren vs. pulse lengh, half sine wave, single pulse, Fig. 7 Surge on-sae curren vs. number of pulses, half sine wave, T j = T jmax V R = V, T j = T jmax TS - TR/311/12e May-16 6 of 1
7 T C ( C ) T C ( C ) P T ( W ) P T ( W ) 5STF 28H26 Power Loss and Maximum Case Temperaure Characerisics 6 5 y = y = I TAV ( A ) I TAV ( A ) Fig. 8 On-sae power loss vs. average on-sae curren, sine waveform, f = 5 Hz, T = 1/f 13 Fig. 9 On-sae power loss vs. average on-sae curren, square waveform, f = 5 Hz, T = 1/f y = I TAV ( A ) 6 y = I TAV ( A ) Fig. 1 Max. case emperaure vs. aver. on-sae curren, sine waveform, f = 5 Hz, T = 1/f Fig. 11 Max. case emperaure vs. aver. on-sae curren, square waveform, f = 5 Hz, T = 1/f Noe 2: Figures number 8 11 have been calculaed wihou considering any urn-on and urn-off losses. They are valid for f = 5 or 6 Hz operaion. TS - TR/311/12e May-16 7 of 1
8 q / q1 ( - ) q / q1 ( - ) q / q1 ( - ) 5STF 28H26 Turn-off Time, Parameer Relaionship Maximum values of urn-off ime a applicaion specific condiions are given by using his formula: 1. q q1 q q1 q q ( T j ) ( dv D / d ) ( dit / d ) q1 q1.9.8 where: q1 is urn-off ime a sandard condiions, see secion "Characerisics".7.6 q ( T j ) q1 q ( dv D / d ) q1 q ( dit / d ) q1 1.8 is facor o be aken from fig. 12 is facor o be aken from fig. 13 is facor o be aken from fig T j ( C ) Fig. 12 Normalised maximum urn-off ime vs. juncion emperaure dv D /d ( V/µs ) di T /d ( A/µs ) Fig. 13 Normalised maximum urn-off ime vs. rae of rise of off-sae volage Fig. 14 Normalised maximum urn-off ime vs. rae of fall of on-sae curren TS - TR/311/12e May-16 8 of 1
9 5STF 28H26 I rrm ( A ) W off ( J ) Q rr ( µc ) Turn-off Characerisics vt (), it () v T () V D 1 I TM = 2 A 1 A 5 A I TM i T () - di T /d dv D /d 1 q I rrm 1 Q rr V R di T /d ( A/µs ) Fig. 17 Typical waveforms and definiion of symbols a urn-off of a hyrisor, inducive swiching wihou RC snubber 1 Fig. 18 Max. recovered charge vs. rae of fall on-sae curren, rapezoid pulse, V R = 1 V, T j = T jmax 6. V R = 2/3 V DRM 1 I TM = 2 A 1 A 5 A V V di T /d ( A/µs ) V 1 V di T /d ( A/µs ) Fig. 19 Max. reverse recovery curren vs. rae of fall on-sae curren, rapezoid pulse, V R = 1 V, T j = T jmax Fig. 2 Maximum urn-off energy per pulse vs. rae of fall on-sae curren, rapezoid pulse, inducive swiching wihou RC snubber, I TM = 2 A, T j = T jmax TS - TR/311/12e May-16 9 of 1
10 5STF 28H26 Noes: TS - TR/311/12e May-16 1 of 1
5STF 11F3010 Old part no. TR Fast Thyristor
5STF 11F31 5STF 11F31 Old par no. TR 918-111-3 Fas Thyrisor Properies Key Parameers Amplifying gae V DRM, V RRM = 3 V High operaional capabiliy I TAV = 1 11 A Opimized urn-off parameers I TSM = 1. ka V
More information5STF 07T1414 Old part no. TR 907FC
5STF 7T1414 Medium Frequency Thyrisor Properies 5STF 7T1414 Old par no. TR 97FC-74-14 Key Parameers Amplifying gae V DRM, V RRM = 1 4 V High operaional capabiliy I TAV = 736 A Opimized urn-on and urn-off
More information5STP 18F1801 Old part no. T
5STP 18F181 Phase Control Thyristor Properties 5STP 18F181 Old part no. T 918-177-18 Key Parameters High operational capability V DRM, V RRM = 1 8 V Possibility of serial and parallel connection I TAVm
More informationp h a s e - o u t Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VVZB 135 = 1600 V = 135 A Recommended replacement:
VVZB 5 Three Phase Recifier Bridge wih IGBT and Fas Recovery Diode for Braking Sysem V RRM I dvm = 6 V = 5 V RRM Type + 6 5 4 NTC 9 + V 6 VVZB 5-6 NO 6+7 4+5 + Symbol Condiions Maximum Raings V RRM 6 V
More information5SDF 06D2504 Old part no. DM
Fast Recovery Diode Properties 5SDF 6D254 Old part no. DM 827-62-25 Key Parameters Optimized recovery characteristics V RRM = 2 5 V Industry standard housing I FAVm = 615 A I FSM = 1 A Applications V TO
More information5SGS 08D4500 Old part no. TG
Old part no. TG 97-8-45 Gate Turn-off Thyristor Properties Key Parameters Full reverse voltage V DRM, V RRM = 4 5 V High reliability I TGQM = 8 A Suitable for drives and traction applications I TAVm =
More information5SDF 13H4505. Fast Recovery Diode. Properties. Key Parameters. VRRM = V Enhanced Safe Operating Area. IFAVm = A Industry standard housing
5SDF 13H455 5SDF 13H455 Fast Recovery Diode Properties Key Parameters Optimized soft recovery characteristics VRRM = 4 5 V Enhanced Safe Operating Area IFAVm = 1 393 A Industry standard housing IFSM =
More information5SDD 36K5000 Old part no. DV 889B
Rectifier Diode Old part no. DV 889B-36-5 Properties Key Parameters Industry standard housing V RRM = 5 V Suitable for parallel operation I FAVm = 3 638 A High operating temperature I FSM = 45 A Low forward
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = x 1 I C = 9 =. CE(sa) Phase leg Par number MII7-13 1 Backside: isolaed 7 3 Feaures / dvanages: pplicaions: Package: Y NPT IGBT echnology low sauraion volage low swiching losses
More information5SDF 0131Z0401. High Frequency Housingless Welding Diode. I FAVm = A I FSM = A V TO = V Applications r T = m.
5SDF 131Z41 5SDF 131Z41 High Frequency Housingless Welding Diode Properties Key Parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 13 58 A I FSM = 7
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = 12 I C2 = 16 = 2.2 CE(sa) Boos Chopper + free wheeling Diode Par number MID14-123 Backside: isolaed 1 3 4 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low sauraion
More information5SDD 71B0400 Old part no. DS 808D
Old part no. DS 88D-71-4 Welding diode Properties Key parameters High forward current capability VRRM = 4 V Low forward and reverse recovery losses IFAVm = 7 1 A High operational reliability IFSM = A VTO
More informationFeatures / Advantages: Applications: Package: Y4
IGBT (NPT) Module CES = 12 I C25 = 16 = 2.2 CE(sa) Buck Chopper + free wheeling Diode Par number MDI145-123 Backside: isolaed 1 7 6 3 2 Feaures / dvanages: pplicaions: Package: Y4 NPT IGBT echnology low
More informationFeatures / Advantages: Applications: Package: SMPD
X0PLB XP GB x CES C CE(sa). SOPLUS Surface Moun Power Device Phase leg SCR / GB Par number X0PLB Backside: isolaed E664 6 4 Feaures / dvanages: pplicaions: Package: SMPD XP GB - low sauraion volage - posiive
More informationXPT IGBT Module MIXA450PF1200TSF. Phase leg + free wheeling Diodes + NTC MIXA450PF1200TSF. Part number
XPT IGBT Module CS 2x 12 I C25 1.8 C(sa) Phase leg + free wheeling Diodes + NTC Par number Backside: isolaed 5 2 1 8 7 9 3 4 /11 Feaures / dvanages: pplicaions: Package: SimBus F High level of inegraion
More information3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC /20 NTC. Features / Advantages: Applications: Package: E2-Pack
ZB3-6ioX hyrisor Module M = 6 I = D FSM = 7 I 3~ ecifier Brake hopper ES = 2 I = 2 2 E(sa) =,8 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni + N Par number ZB3-6ioX Backside: isolaed / 3 2
More informationConverter - Brake - Inverter Module (CBI2)
MUBW 5-6 7 Converer - Brake - Inverer Module (CBI2) 2 22 D D3 D5 2 3 7 D7 6 5 T D T3 D3 T5 D5 8 2 6 7 5 9 4 D2 D4 D6 T7 T2 D2 T4 D4 T6 D6 23 4 24 2 3 NTC 8 9 Three Phase Brake Chopper Three Phase Recifier
More information5SDD 0120C0400 Old part no. DS 879D
Old part no. DS 879D-12-4 Welding diode Properties Key parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 11 3 A High operational reliability I FSM
More informationConverter - Brake - Inverter Module (CBI2)
Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D1 1 2 3 7 D7 16 1 T1 D1 T3 D3 T D 18 2 6 17 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 1 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase
More informationConverter - Brake - Inverter Module (CBI2)
Converer - Brake - Inverer Module (CBI2) 21 22 D11 D13 D15 1 2 3 7 D7 16 15 T1 D1 T3 D3 T5 D5 18 6 17 5 19 4 D12 D14 D16 T7 T2 D2 T4 D4 T6 D6 23 14 24 11 12 13 NTC 8 9 Three Phase Brake Chopper Three Phase
More informationPower MOSFET Stage for Boost Converters
UM 33-5N Power MOSFET Sage for Boos Converers Module for Power Facor Correcion 5 = 7 DSS = 5 R DS(on) =. Ω RRM (Diode) DSS Type 5 3 7 3 5 UM 33-5N 5 7 Symbol Condiions Maximum Raings DSS T J = 5 C o 5
More informationConverter - Brake - Inverter Module (CBI3)
MUBW 35-12 8 Converer - Brake - Inverer Module (CBI3) 21 22 D11 D13 D15 1 2 3 7 D7 1 15 T1 D1 T3 D3 T5 D5 18 2 17 5 19 4 D12 D14 D1 23 14 24 T7 11 1 T2 D2 T4 D4 T D 12 13 See ouline drawing for pin arrangemen
More informationV AK (t) I T (t) I TRM. V AK( full area) (t) t t 1 Axial turn-on. Switching losses for Phase Control and Bi- Directionally Controlled Thyristors
Applicaion Noe Swiching losses for Phase Conrol and Bi- Direcionally Conrolled Thyrisors V AK () I T () Causing W on I TRM V AK( full area) () 1 Axial urn-on Plasma spread 2 Swiching losses for Phase Conrol
More informationABB 5STP12F4200 Control Thyristor datasheet
ABB 5STP12F4200 Control Thyristor datasheet http://www.manuallib.com/abb/5stp12f4200-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed
More informationCoolMOS 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode
IXKF 4N6SCD1 CoolMOS 1) Power MOSFET wih Series Schoky Diode and Ulra Fas niparallel Diode in High olage ISOPLUS i4-pc S = 6 2 = 41 yp. = 6 mω rr = 7 ISOPLUS i4-pc Preliminary daa 1 D S T D F 1 2 E72873
More informationPhase Control Thyristor Type SKT552/16E
Date:- 4 Feb 22 Data Sheet Issue:- 3 Absolute Maximum Ratings Phase Control Thyristor Type VOLTAGE RATINGS Symbol Parameter MAXIMUM UNITS V DRM Repetitive peak off-state voltage, (note 1) 16 V V DSM Non-repetitive
More informationIXGH48N60C3D1. GenX3 TM 600V IGBT with Diode V CES = 600V I C110. = 48A V CE(sat) 2.5V t fi(typ) = 38ns. High speed PT IGBT for kHz Switching
GenX3 TM 6V IGBT wih Diode High speed PT IGBT for 4-1kHz Swiching IXGH48N6C3D1 V CES = 6V 11 = 48A V CE(sa) 2.V fi(yp) = 38ns TO-247 Symbol Tes Condiions Maximum Raings V CES = C o C 6 V V CGR = C o C,
More informationStandard Rectifier Module
UB2-6NOX Sandard ecifier Module M = 6 I = 8 D 3~ ecifier I SM = Brake hopper ES = 2 I = 8 25 E(sa) =.7 3~ ecifier Bridge + Brake Uni Par number UB2-6NOX M/O S Backside: isolaed ~6 ~E6 ~K6 U/ W M/O W U
More informationV DS. 100% UIS Tested 100% R g Tested. Top View. Top View S2 G2
3V Dual PChannel MOSFET General Descripion The AO483 uses advanced rench echnology o provide excellen R DS(ON) wih low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More informationIXTA96P085T IXTP96P085T IXTH96P085T
TrenchP TM Power MOSFETs P-Channel Enhancemen Mode Avalanche Raed IXTA96P85T IXTP96P85T V DSS = - 85V I D25 = - 96A R DS(on) 13mΩ TO-263 AA (IXTA) G S D (Tab) Symbol Tes Condiions Maximum Raings V DSS
More informationO10 W10. Features / Advantages: Applications: Package: V2-Pack. 3~ Rectifier with brake unit for drive inverters
ZB-ioX hyrisor Module M = = 8 D SM = 7 3~ ecifier Brake hopper ES = = 8 5 E(sa) =.7 3~ ecifier Bridge, half-conrolled (high-side) + Brake Uni Par number ZB-ioX Backside: isolaed O S E M L7 G7 7 O eaures
More informationHigh Voltage Standard Rectifier Module
UB35-22NO High olage Sandard ecifier Module M = 22 I = 5 D 3~ ecifier I SM = Brake hopper ES = 7 I = 3 25 E(sa) =.9 3~ ecifier Bridge + Brake Uni + NT Par number UB35-22NO Backside: isolaed 24+25 29 3
More informationTop View. Top View. V DS Gate-Source Voltage ±8 ±8 Continuous Drain Current Pulsed Drain Current C V GS I D -2.5 I DM P D 0.
V Complemenary MOSFET General Descripion The AO664 combines advanced rench MOSFET echnology wih a low resisance package o provide exremely low R DS(ON). This device is ideal for load swich and baery proecion
More informationPhase Control Thyristor Types N2086NC060 to N2086NC100
Date:- August 1 Data Sheet Issue:- 3 Phase Control Thyristor Types N86NC6 to N86NC1 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 6-1 V V DSM
More informationBCR10CM. Triac 10 Amperes/ Volts ➀ T1 TERMINAL ➃ T2 TERMINAL E L C D A H P M OUTLINE DRAWING
BCR1CM Powerex, Inc., 2 Hillis Sree, Youngwood, Pennsylvania 15697-18 (412) 925-7272 1 mperes/4-6 Vols OUTLINE DRWING C ➃ D E L H G Ouline Drawing (Conforms o TO-22) Dimensions Inches Millimeers.63 Max.
More informationAsymmetric Gate turn-off Thyristor 5SGA 30J4502
V DRM = 45 V I TGQM = 3 A I TSM = 24 1 3 A V T = 2.2 V r T =.6 mω V Dclink = 28 V Asymmetric Gate turn-off Thyristor 5SGA 3J452 Patented free-floating silicon technology Low on-state and switching losses
More informationTop View. Top View S2 G2 S1 G1
AO49 3V Complemenary MOSFET General Descripion AO49 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. This complemenary N and P channel MOSFET configuraion is ideal for low
More informationAO V Complementary Enhancement Mode Field Effect Transistor
AO46 6V Complemenary Enhancemen Mode Field Effec Transisor General Descripion The AO46 uses advanced rench echnology MOSFETs o provide excellen and low gae charge. The complemenary MOSFETs may be used
More informationp h a s e - o u t Three phase full Bridge with Trench MOSFETs in DCB isolated high current package GWM X2
GWM 18-4X2 Three phase full Bridge wih Trench MOSFETs in DCB isolaed high curren package S = 4 V 25 = 18 R DSon yp. = 1.9 mw Preliminary daa G1 G3 G5 L+ S1 G2 S3 G4 S5 G6 L1 L2 L3 Sraigh leads Surface
More information5SGA 20H2501. Gate turn-off Thyristor. V DRM = I TGQM = 2000 A I TSM = 16 ka V T0 = 1.66 V r T = 0.57 mω V DClin = 1400 V
V DRM = 25 V I TGQM = 2 A I TSM = 16 ka V T = 1.66 V r T =.57 mω V DClin = 14 V Gate turn-off Thyristor Doc. No. 5SYA125-1 Jun. 4 Patented free-floating silicon technology Low on-state and switching losses
More informationRectifier Diode 5SDD 11D2800
V RSM = 3 V I F(AV)M = 1285 A I F(RMS) = 219 A I FSM = 15 1 3 A V F =.933 V r F =.242 mw Rectifier Diode 5SDD 11D28 Doc. No. 5SYA1166- Okt. 3 Very low on-state losses Optimum power handling capability
More information5SGA 15F2502. Gate turn-off Thyristor. V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V
V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA 1214-01 Aug. 2000 Patented free-floating silicon technology
More informationStandard Rectifier Module
UB7-NOXT Sandard ecifier Module 3~ ecifier Bridge + Brake Uni + NT M = I = 7 D SM = I 3~ ecifier Brake hopper ES = I = 8 E(sa) =.8 Par number UB7-NOXT Backside: isolaed NT ~ 7~ 9~ eaures / dvanages: pplicaions:
More informationS G V DS V GS Pulsed Drain Current B -15 Schottky reverse voltage Continuous Forward Current A F I DM V KA
ON473 2V PChannel MOSFET wih Schoky Diode General Descripion The ON473 uses advanced rench echnology o provide excellen R DS(ON) and low gae charge. Schoky diode is provided o faciliae he implemenaion
More informationNDP4050L / NDB4050L N-Channel Logic Level Enhancement Mode Field Effect Transistor
April 996 NP45L / NB45L N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These logic level N-Channel enhancemen mode power field effec ransisors are produced using
More informationIXFK120N65X2 IXFX120N65X2
X2-Class HiPerFET TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed Fas Inrinsic iode Preliminary Technical Informaion IXFK2N65X2 IXFX2N65X2 V SS = 6 I 25 = 2A R S(on) 24m TO-264 (IXFK) Symbol Tes
More informationAsymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY
V DRM = 4500 V I TGQM = 600 A I TSM = 3 10 3 A V T0 = 1.9 V r T = 3.5 mω V Dclink = 2800 V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Patented free-floating silicon technology Low on-state
More informationST2600C..R SERIES 2630A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25199 rev. B 02/00 (R-PUK)
ST2600C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Double side cooling High surge capability High mean current Fatigue free 2630A Typical Applications DC motor controls Controlled DC
More informationV DS I D (at V GS =-10V) R DS(ON) (at V GS = -4.5V) 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The combines advanced rench MOFET echnology wih a low resisance package o provide exremely low R (ON). This device is ideal for load swich and baery proecion applicaions.
More informationPhase Control Thyristor Types N3165HA260 and N3165HA280 Development Type No.: NX450HA260 and NX450HA280
Date:- 8 th December, 214 Data Sheet Issue:- A1 Phase Control Thyristor Types N3165HA26 and N3165HA28 Development Type No.: NX45HA26 and NX45HA28 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS
More informationV DS. 100% UIS Tested 100% R g Tested
3V PChannel MOFET General escripion The AO4449 uses advanced rench echnology o provide excellen R(ON), and ulralow low gae charge. This device is suiable for use as a load swich or in PWM applicaions.
More informationPhase Control Thyristor Types N1588NC200 to N1588NC260
Date:- 2 August 212 Data Sheet Issue:- 2 Phase Control Thyristor Types N1588NC2 to N1588NC26 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 2-26
More informationp h a s e - o u t Dual Power MOSFET Module VMM X2 V DSS = 75 V I D25 = 1560 A R DS(on) = 0.38 mω Phaseleg Configuration
MM 5-75X Dual Power MOSFET Module S = 75 5 = 5 =. mω Phaseleg Configuraion Gae Conrol Pi 9 Power Screw Terminals 9 MOSFET T + T Symbol Condiio Maximum Raings S = 5 C o 5 C 75 ± 5 T C = 5 C j 5 T C = C
More information5SGF 30J4502. Gate turn-off Thyristor PRELIMINARY. V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V
V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V Gate turn-off Thyristor 5SGF 30J4502 PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 Patented free-floating silicon
More informationIXYS. Thyristor/Diode Modules MC#500. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS
Date: 13 th Mar 13 Data Sheet Issue: 1 Absolute Maximum Ratings Thyristor/Diode Modules MC#5 V RRM V DRM [V] 3 5-3io7 5-3io7 5-3io7 5-3io7 36 5-36io7 5-36io7 5-36io7 5-36io7 VOLTAGE RATINGS MAXIMUM LIMITS
More informationIXYS. Thyristor/Diode Modules MC#650. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS
Date: 13 th Mar 13 Data Sheet Issue: 1 Absolute Maximum Ratings Thyristor/Diode Modules MC#65 V RRM V DRM [V] 4 65-4io7 65-4io7 65-4io7 65-4io7 VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state
More informationST303C..L SERIES 515A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25186 rev. A 05/94. case style TO-200AC (B-PUK)
ST303C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
More informationTrenchMV TM Power MOSFET
Preliminary Technical Informaion TrenchMV TM Power MOSFET N-Channel Enhancemen Mode Avalanche Raed V DSS = V I D25 = A R DS(on) 7. mω TO-263 (IXTA) Symbol Tes Condiions Maximum Raings V DSS = 25 C o 175
More informationPhase Control Thyristor Types N1075LN180
Date:- 3 th April, 15 Data Sheet Issue:- 3 Phase Control Thyristor Types Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 18 V V DSM Non-repetitive
More informationST183C..C SERIES 370A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25178 rev. B 04/00. case style TO-200AB (A-PUK)
ST83C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AB (A-PUK) All diffused design Center amplifying gate Guaranteed high
More informationNDH834P P-Channel Enhancement Mode Field Effect Transistor
May 997 NH834P P-Channel Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -8 P-Channel enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationPhase Control Thyristor Types N0465WN140 and N0465WN160
Date:- 4 th June, 214 Data Sheet Issue:- 4 Phase Control Thyristor Types N465WN14 and N465WN16 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1)
More informationNDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
June 997 NS33P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's
More informationNDS356P P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 996 NS356P P-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion These P-Channel logic level enhancemen mode power field effec ransisors are produced using Fairchild's proprieary,
More informationNDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor
January 997 NS3AN N-Channel Logic Level Enhancemen Mode Field Effec Transisor General escripion Feaures SuperSOT TM -3 N-Channel logic level enhancemen mode power field effec ransisors are produced using
More informationDouble Thyristor Module For Phase Control MT A2
Electrically isolated base plate Industrial standard package Simplified mechanical design, rapid assembly Pressure contact PROTON-ELECTROTEX RUSSIA Double Thyristor Module For Phase Control MT3-595-18-A2
More information6/7 1/2 4/5. Features / Advantages: Applications: Package: V1-A-Pack
MIX15R1 XPT Module 1 ES I E(sa) 1.7 Boos hopper Par number MIX15R1 Backside: isolaed /7 1/ 1 /5 Feaures / dvanages: pplicaions: Package: 1--Pack Easy paralleling due o he posiive emperaure coefficien of
More informationThyristor/Diode Modules M## 700 MCC MCD MDC MCA MCK MCDA MDCA
Date: 27.1.25 Data Sheet Issue: 2 Absolute Maximum Ratings Thyristor/Diode Modules M## 7 V RRM V DRM [V] MCC MCD MDC MCA MCK MCDA MDCA 12 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W
More informationAsymmetric Gate turn-off Thyristor 5SGA 15F2502
V DRM = 2500 V I GQM = 1500 A I SM = 10 10 3 A V 0 = 1.45 V r = 0.90 mw V Dclink = 1400 V Asymmetric Gate turn-off hyristor 5SGA 15F2502 Patented free-floating silicon technology Low on-state and switching
More informationPhase Control Thyristor Types N3533Z#140 to N3533Z#220 Old Type No.: N1400CH02-20
WESTCODE An IXYS Company Date:- 18 Sept 27 Data Sheet Issue:- 2 Phase Control Thyristor Types N3533Z#14 to N3533Z#22 Old Type No.: N14CH2-2 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM
More informationPhase Control Thyristor Types N4085ZC080 to N4085ZC120 Old Type No.: N1600CH02-12
Date:- 3 Jan, 23 Data Sheet Issue:- 1 Phase Control Thyristor Types N485ZC8 to N485ZC12 Old Type No.: N16CH2-12 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage,
More informationST303C..C SERIES 620A INVERTER GRADE THYRISTORS. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25172 rev.
ST303C..C SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-AB (E-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt
More informationPhase Control Thyristor Types N2500VC120 to N2500VC160
WESTCODE Date:- 2 Nov, 21 Data Sheet Issue:- 1 Phase Control Thyristor Types N25VC12 to N25VC16 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VDRM Repetitive peak off-state voltage, (note 1)
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high-speed swiching npn ransisor wih inegraed damper diode in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers.
More informationThyristor/Diode Modules M## 500 MCC MCD MDC MCA MCK MCDA MDCA
Date: 19.9.25 Data Sheet Issue: 3 Absolute Maximum Ratings Thyristor/Diode Modules M## 5 V RRM V DRM [V] MCC MCD MDC MCA MCK MCDA MDCA 2 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 22 5-22io1 5-22io1
More informationSilicon Diffused Power Transistor
Philips Semiconducors Silicon Diffused Power Transisor Produc specificaion GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor wih an inegraed damper
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high-speed swiching npn ransisors in a fully isolaed SOT99 envelope, primarily for use in horizonal deflecion circuis of colour elevision receivers. QUICK REFERENCE DATA
More informationPhase Control Thyristor Types N1467NC200 to N1467NC260
Date:- 31 st July 2012 Data Sheet Issue:- 3 Phase Control Thyristor Types N1467NC200 to N1467NC260 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved
More informationST333C..L SERIES 620A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25187 rev. B 04/00. case style TO-200AC (B-PUK)
ST333C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
More informationST223C..C SERIES 390A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25174 rev. B 04/00. case style TO-200AB (A-PUK)
ST223C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-0AB (A-PUK) All diffused design Center amplifying gate Guaranteed
More informationST733C..L SERIES 940A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25188 rev. A 04/00. case style TO-200AC (B-PUK)
ST733C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
More informationApplication Note AN Software release of SemiSel version 3.1. New semiconductor available. Temperature ripple at low inverter output frequencies
Applicaion Noe AN-8004 Revision: Issue Dae: Prepared by: 00 2008-05-21 Dr. Arend Winrich Ke y Words: SemiSel, Semiconducor Selecion, Loss Calculaion Sofware release of SemiSel version 3.1 New semiconducor
More informationABSOLUTE MAXIMUM RATINGS (Tc=25 o C) Item Symbol Unit MDM500H65E2. 6,500 VRRM Voltage
MDM5H65E2 FEATURES Low noise recovery: Ulra sof fas recovery diode. High reverse recovery capabiliy: Super HiRC Srucure. High reliabiliy, high durabiliy diodes. Isolaed hea sink (erminal o base). Spec.No.SR2-SP-97
More informationSilicon Diffused Power Transistor
PHE39 GENERAL DESCRIPTION The PHE39 is a silicon npn power swiching ransisor in he TO22AB envelope inended for use in high frequency elecronic lighing ballas applicaions, converers, inverers, swiching
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION High volage, high speed swiching npn ransisor in a plasic full-pack envelope. Inended for use in horizonal deflecion circuis of colour elevision receivers. Feaures excepional olerance
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION New generaion, high-volage, high-speed swiching npn ransisor in a plasic envelope inended for use in horizonal deflecion circuis of high resoluion moniors. Feaures improved RBSOA performance
More informationST1230C..K SERIES 1745A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25194 rev. B 01/00. case style A-24 (K-PUK)
ST1230C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk 1745A Typical
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision
More informationSmart Highside Power Switch PROFET
Smar ighside Power Swich PROFET BTS 410E2 Feaures TO220AB/ Overload proecion Curren limiaion Shor circui proecion Thermal shudown 1 1 Overvolage proecion (including Sandard Sraigh leads SMD load dump)
More informationST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK)
ST0C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-0AC (B-PUK) 910A Typical Applications DC motor
More informationSilicon Diffused Power Transistor
GENERAL DESCRIPTION Enhanced performance, new generaion, high-volage, high-speed swiching npn ransisor in a plasic full-pack envelope inended for use in horizonal deflecion circuis of colour elevision
More informationAsymmetric Integrated Gate- Commutated Thyristor 5SHY 35L4503
V DRM = 45 V I TGQM = 4 A I TSM = 32 ka V T =.4 V r T =.325 mω V DClink = 28 V Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L453 Highest snubberless turn-off rating Suitable for series connection
More informationPart Ordering code Marking Remarks 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Tape and Reel
Small Signal Fas Swiching Diode Feaures These diodes are also available in oher case syles including he DO- case wih he ype designaion N8, he MiniMELF case wih he ype designaion LL8, and he SOT- case wih
More informationSmart Highside Power Switch
Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion
More informationObsolete Product(s) - Obsolete Product(s) A
STT812D/D/G TURBOSWTCH ULTR-FST HGH VOLTGE DODE MN PRODUCT CHRCTERSTCS F(V) V RRM rr (yp) FETURES ND BENEFTS ULTR-FST, SOFT RECOVERY. VERY LOW OVERLL POWER LOSSES N BOTH THE DODE ND THE COMPNON TRNSSTOR.
More informationSTTB3006P(I) TURBOSWITCH B. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 30A IF(AV) V RRM 600V. trr (typ) 60ns. VF (max) 1.
STTB3006P() TURBOSWTCH B. ULTR-FST HGH OLTGE DODE MN PRODUCTS CHRCTERSTCS F() RRM 30 600 rr (yp) 60ns F (max) 1.3 K PRELMNRY DT FETURES ND BENEFTS SPECFC TO THE FOLLOWNG OPER- TONS: Snubbing or clamping,
More informationSmart Highside Power Switch
Smar ighside Power Swich Feaures Overload proecion Curren limiaion Shor circui proecion Thermal shudown Overvolage proecion (including load dump) Fas demagneizaion of inducive loads Reverse baery proecion
More informationData Sheet, Rev. 1.1, September 2011 HITFET - BTS3405G. Smart Low-Side Power Switch. Automotive Power
Daa Shee, Rev. 1.1, Sepember 2011 HITFET - Smar Low-Side Power Swich Auomoive Power 1 Overview....................................................................... 3 2 Block Diagram...................................................................
More informationIXRH 40N120. IGBT with Reverse Blocking capability V CES I C25. = ±1200 V = 55 A V CE(sat) = 2.3 V typ IXYS All rights reserved TO-247 AD
IXRH N wih Reverse Blocking capabiliy S 5 = ± V = 55 (sa) =. V yp. TO-7 D E (TB) E = ae, = ollecor, E = Emier, TB = ollecor Symbol ondiio Maximum Raings S T VJ = 5 o 5 ± V S ± V 5 T = 5 55 9 T = 9 5 M
More information