Double Thyristor Module For Phase Control MT A2

Transcription

1 Electrically isolated base plate Industrial standard package Simplified mechanical design, rapid assembly Pressure contact PROTON-ELECTROTEX RUSSIA Double Thyristor Module For Phase Control MT A2 Mean on-state current I TAV 595 A Repetitive peak off-state voltage Repetitive peak reverse voltage V DRM V RRM Turn-off time t q 320 s V V DRM, V RRM, V Voltage code T j, C MT3 MT/D3 MD/T3 All dimensions in millimeters (inches) 2015-Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 1 of 12

2 MAXIMUM ALLOWABLE RATINGS Symbols and parameters Units Values Test conditions ON-STATE I TAV Mean on-state current A 595 T c =85 C; I TRMS RMS on-state current A half-sine wave; 50 Hz I TSM Surge on-state current ka I 2 t Safety factor A 2 s BLOCKING V DRM, V RRM V DSM, V RSM Repetitive peak off-state and Repetitive peak reverse voltages Non-repetitive peak off-state and Non-repetitive peak reverse voltages V V Direct off-state and V V D, V R V DRM Direct reverse voltages V RRM TRIGGERING I FGM Peak forward gate current A 8 T j =T j max T j =25 C T j =T j max T j =25 C T j =T j max T j =25 C T j =T j max T j =25 C 180 half-sine wave; 50 Hz (t p =10 ms); single pulse; V D =V R =0 V; Gate pulse I G =2 A; t GP =50 s; di G /dt 1 A/s 180 half-sine wave; 60 Hz (t p =8.3 ms); single pulse; V D =V R =0 V; Gate pulse I G =2 A; t GP =50 s; di G /dt 1 A/s 180 half-sine wave; 50 Hz (t p =10 ms); single pulse; V D =V R =0 V; Gate pulse I G =2 A; t GP =50 s; di G /dt 1 A/s 180 half-sine wave; 60 Hz (t p =8.3 ms); single pulse; V D =V R =0 V; Gate pulse I G =2 A; t GP =50 s; di G /dt 1 A/s T j min < T j <T j max ; 180 half-sine wave; 50 Hz; Gate open T j min < T j <T j max ; 180 half-sine wave; 50 Hz;single pulse; Gate open T j =T j max ; Gate open V RGM Peak reverse gate voltage V 5 T j =T j max P G Gate power dissipation W 4 T j =T j max for DC gate current SWITCHING (di T /dt) crit THERMAL Critical rate of rise of on-state current non-repetitive (f=1 Hz) A/s 400 T stg Storage temperature C T j Operating junction temperature C MECHANICAL a Acceleration under vibration m/s 2 50 T j =T j max ; V D =0.67. V DRM ; I TM =2 I TAV ; Gate pulse I G =2 A; t GP =50 s; di G /dt 1 A/s 2015-Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 2 of 12

3 ON-STATE CHARACTERISTICS Symbols and parameters Units Values Conditions V TM Peak on-state voltage, max V 1.50 T j =25 C; I TM =1570A V T(TO) On-state threshold voltage, max V 0.84 T j =T j max ; r T On-state slope resistance, max m I TAV < I T < 1.5 I TAV I L Latching current, max ma 1000 T j =25 C; V D =12 V; Gate pulse I G =2 A; t GP =50 s; di G /dt 1 A/s I H Holding current, max ma 300 T j =25 C; V D =12 V; Gate open BLOCKING I DRM, I RRM Repetitive peak off-state and T ma 140 j =T j max ; Repetitive peak reverse currents, max V D =V DRM ; V R =V RRM (dv D /dt) crit Critical rate of rise of off-state voltage, min V/s 1000 T j =T j max ; V D =0.67. V DRM ; Gate open TRIGGERING V GT Gate trigger direct voltage, max V I GT Gate trigger direct current, max ma T j = T j min T j =25 C T j = T j max V D =12 V; I D =3 A; T j = T j min Direct gate current T j = 25 C T j = T j max V GD Gate non-trigger direct voltage, min V 0.25 T j =T j max ; V D =0.67. V DRM ; I GD Gate non-trigger direct current, min ma Direct gate current SWITCHING t gd Delay time s 2.00 t q Turn-off time, max s 320 THERMAL R thjc R thch INSULATION Thermal resistance, junction to case Thermal resistance, case to heatsink per module C/W per arm C/W per module C/W per arm C/W per module C/W per arm C/W V ISOL Insulation test voltage kv MECHANICAL T j =25 C; V D =0.4. V DRM ; I TM =I TAV ; Gate pulse I G =2 A; t GP =50 s; di G /dt 1 A/s dv D /dt=50 V/s; T j =T j max ; I TM = I TAV ; di R /dt=10 A/s; V R =100V; V D =0.67 V DRM ; 180 half-sine wave, 50 Hz DC 3.00 Sine wave, 50 Hz; t=1 min 3.60 RMS t=1 sec M 1 Mounting torque (M6) 1) Nm 6.00 Tolerance 15% M 2 Terminal connection torque (M10) 1) Nm Tolerance 15% w Weight g Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 3 of 12

4 PART NUMBERING GUIDE MT A2 - N Thyristor module (MT) Thyristor Diode module (MT/D) Diode Thyristor module (MD/T) 2. Circuit Schematic: 3 serial connection 3. Average On-state Current, A 4. Voltage Code 5. Package Type (M.A2) 6. Ambient Conditions: N Normal NOTES 1) The screws must be lubricated UL certified file-no. Е The information contained herein is confidential and protected by Copyright In the interest of product improvement, Proton-Electrotex reserves the right to change data sheet without notice Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 4 of 12

5 Fig 1 On-state characteristics of Limit device Analytical function for On-state characteristic: V T A B i C ln( i 1) D T T i T Coefficients for max curves T j = 25 o C T j = T j max A B C D On-state characteristic model (see Fig. 1) 2015-Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 5 of 12

6 Fig 2 Transient thermal impedance Analytical function for Transient thermal impedance junction to case Z thjc for DC: thjc Where i = 1 to n, n is the number of terms in the series. Z t = Duration of heating pulse in seconds. Z thjc = Thermal resistance at time t. R i = Amplitude of p th term. i = Time constatnt of r th term. n i1 R i 1 e i R i, K/W i, s Transient thermal impedance junction to case Z thjc model (see Fig. 2) t i 2015-Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 6 of 12

7 Fig 3 Gate characteristics Trigger limits Fig 4 - Gate characteristics Power curves 2015-Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 7 of 12

8 Fig 5 - Total recovered charge, Q rr-i (integral) Fig 6 - Recovered charge, Q rr (linear) 2015-Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 8 of 12

9 Fig 7 - Peak reverse recovery current, I rm Fig 8 - Recovery time, t rr (50% chord) 2015-Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 9 of 12

10 Fig 9 On-state power loss (sinusoidal current waveforms) Fig 10 - On-state power loss (rectangular current waveforms) 2015-Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 10 of 12

11 Fig 11 Maximum case temperature (sinusoidal current waveforms) Fig 12 - Maximum case temperature (rectangular current waveforms) 2015-Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 11 of 12

12 Fig 13 Maximum surge and I 2 t ratings Fig 14 - Maximum surge ratings 2015-Mar-02 V2.4 Proton-Electrotex Data Sheet MT A2 page 12 of 12