Dual Diode Water Cooled Modules MD# 950

Size: px
Start display at page:

Download "Dual Diode Water Cooled Modules MD# 950"

Transcription

1 Date: Data Sheet Issue: 2 Dual Diode Water Cooled Modules MD# 95 Absolute Maximum Ratings V RRM V DRM [V] MDD MDA MDK N1W 95-12N1W 95-12N1W N1W 95-14N1W 95-14N1W N1W 95-16N1W 95-16N1W N1W 95-18N1W 95-18N1W N1W 95-2N1W 95-2N1W N1W 95-22N1W 95-22N1W VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse voltage 1) V V RSM Non-repetitive peak reverse voltage 1) V UNITS OTHER RATINGS MAXIMUM LIMITS I F(AV)M Maximum average forward current. T water = 17 C, 4l/min 2), 3) 1129 A I F(AV)M Maximum average forward current. T water = 45 C, 4l/min 2), 3) 95 A I F(AV)M Maximum average forward current. T water = 85 C, 4l/min 2), 3) 668 A I F(RMS) Nominal RMS forward current. T water = 17 C, 4l/min 2), 3) 1773 A I F(d.c.) D.C. forward current. T water = 17 C, 4l/min 3) 1427 A I TSM Peak non-repetitive surge t p = 1 ms, V RM = 6%V RRM 4) 21.8 ka I TSM2 Peak non-repetitive surge t p = 1 ms, V RM 1 V 4) 24. ka I 2 t I 2 t capacity for fusing t p = 1 ms, V RM = 6%V RRM 4) A 2 s I 2 t I 2 t capacity for fusing t p = 1 ms, V RM 1 V 4) A 2 s V isol Isolation Voltage 5) 35 V T vj op Operating temperature range -4 to +15 C T stg Storage temperature range -4 to +125 C Notes: 1) De-rating factor of.13% per C is applicable for T Vj below 25 C. 2) Single phase; 5 Hz, 18 half-sinewave. 3) Current ratings do not include adjustments, which may be necessary due to heat being returned by cable connections. 4) Half-sinewave, 15 C T Vj initial. 5) AC RMS voltage, 5 Hz, 1min test. UNITS Data Sheet. Page 1 of 9 May, 25

2 Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS V FM Maximum peak forward voltage I FM = 285 A V V FM Maximum peak forward voltage I FM = 5 A V V T Threshold voltage V r T Slope resistance mω I RRM Peak reverse current Rated V RRM ma Q rr Recovered Charge µc Q ra Recovered Charge, 5% chord I FM = A, t p = 1 ms, µc I rm Reverse recovery current di/dt = 1 A/µs, V r = 5 V A t rr Reverse recovery time, 5% chord µs R thjw Thermal resistance, junction to water Single Diode K/W F 1 Mounting force (to heatsink) Nm F 2 Mounting force (to terminals) ) Nm W t Weight kg Notes: 1) Unless otherwise indicated T vj = 15 C 2) Screws must be lubricated Data Sheet. Page 2 of 9 May, 25

3 Notes on Ratings and Characteristics 1. Voltage Grade Table V RRM Voltage Grade V RSM V R V V DC V Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3. De-rating Factor A blocking voltage de-rating factor of.13%/ C is applicable to this device for T j below 25 C. 4. Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 5. Computer Modelling Parameters 5.1 Device Dissipation Calculations I AV 2 VT + VT + = 2 4 ff 2 ff r T 2 r T W AV and: Where V T =.75V, r T =.2mΩ, R th = Supplementary thermal impedance, see table below and ff = Form factor, see table below. W AV T = R T = T th j max T K Supplementary Thermal Impedance Conduction Angle d.c. Square wave Sine wave Form Factors Conduction Angle d.c. Square wave Sine wave Data Sheet. Page 3 of 9 May, 25

4 5.2 Calculating V F using ABCD Coefficients The on-state characteristic I F vs. V F, on page 6 is represented in two ways; (i) the well established V T and r T tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V F in terms of I F given below: V F = A + B ln ( I F ) + C I F + D I F The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V F agree with the true device characteristic over a current range, which is limited to that plotted. 25 C Coefficients 15 C Coefficients A A B B C C D D Data Sheet. Page 4 of 9 May, 25

5 5.3 D.C. Thermal Impedance Calculation p = n t = p= 1 r r p 1 e t τ p Where p = 1 to n, n is the number of terms in the series and: t = Duration of heating pulse in seconds. r t = Thermal resistance at time t. r p = Amplitude of p th term. τ p = Time Constant of r th term. The coefficients for this device are shown in the tables below: D.C. Term r p τ p Reverse recovery ratings (i) Q ra is based on 5% I RM chord as shown in Fig. 1 Fig. 1 (ii) Q rr is based on a 15 µs integration time i.e. (iii) K Factor = t t 1 2 Q rr = 15µ s i rr. dt Data Sheet. Page 5 of 9 May, 25

6 Curves Figure 1 - Forward characteristics of Limit device Figure 2 - Transient thermal impedance.1 Single Diode.1 Instantaneous Forward current - I FM (A) T j = 15 C T j = 25 C Thermal impedance (K/W) Instantaneous Forward voltage - V FM (V) Time (s) Figure 3 Average forward current and Power loss Vs. Inlet water temperature Forward current, I F(AV)M (A) Power Loss Average Current Total Power Loss (W) Inlet water temperature, T water ( C) Data Sheet. Page 6 of 9 May, 25

7 Figure 4 - Total recovered charge, Q rr Figure 5 - Recovered charge, Q ra (5% chord) MD#95-12N1W to 22N1W T j =15 C T j =15 C 2A Recovered charge - Q rr (µc) 15A A 5A Recovered charge - Q ra, 5% chord (µc) 2A 15A A 5A 1 1 di/dt (A/µs) 1 1 di/dt (A/µs) Figure 6 - Peak reverse recovery current, I rm MD#95-12N1W to 22N1W T j =15 C Figure 7 - Maximum recovery time, t rr (5% chord) T j =15 C Reverse recovery current - I rm (A) 2A 15A A 5A Reverse recovery time - t rr, (5% chord) - (µs) 1 2A 15A A 5A 1 1 di/dt (A/µs) di/dt (A/µs) Data Sheet. Page 7 of 9 May, 25

8 Figure 8 Forward current vs. Power dissipation 16 Figure 9 Forward current vs. Water temperature Maximum Forward Dissipation (W) ø 3ø ½ wave d.c. Maximum permissible water temperature ( C) ø 3ø ½ wave d.c Mean Forward Current (A) (Whole cycle averaged) 5 15 Mean forward current (A) (Whole cycle averaged) Figure 1 - Maximum surge Rating T j (initial) = 15 C 1.E+8 Total peak half sine surge current (A) I 2 t: V RRM 1V I 2 t: 6% V RRM I TSM : V RRM 1V I TSM : 6% V RRM 1.E+7 Maximum I 2 t (A 2 s) E+6 Duration of surge (ms) Duration of surge 5Hz) Data Sheet. Page 8 of 9 May, 25

9 Outline Drawing & Ordering Information MDD MDA MDK ORDERING INFORMATION (Please quote 11 digit code as below) M D# 95 N 1 W Fixed Type Code Configuration code DD, DA, DK Average Current Rating Voltage code V DRM/ Standard diode Order code: MDD95-14N1W MDD configuration, 14V V DRM, V RRM, water cooled base Fixed Version Code Water cooled base IXYS Semiconductor GmbH Edisonstraße 15 D Lampertheim Tel: Fax: marcom@ixys.de Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 () Fax: +44 () WSL.sales@westcode,com IXYS WESTCODE An IXYS Company IXYS Corporation 354 Bassett Street Santa Clara CA 9554 USA Tel: +1 (48) Fax: +1 (48) sales@ixys.net Westcode Semiconductors Inc 327 Cherry Avenue Long Beach CA 987 USA Tel: +1 (562) Fax: +1 (562) WSI.sales@westcode.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH. IXYS Semiconductor GmbH. In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice. Data Sheet. Page 9 of 9 May, 25

WESTCODE. Rectifier Diode Types W1856NC400 to W1856NC500 Old Type No: SW40-50CXC815. An IXYS Company. Date:- 21 Dec, Data Sheet Issue:- 1

WESTCODE. Rectifier Diode Types W1856NC400 to W1856NC500 Old Type No: SW40-50CXC815. An IXYS Company. Date:- 21 Dec, Data Sheet Issue:- 1 WESTCODE An IXYS Company Date:- 21 Dec, 24 Data Sheet Issue:- 1 Rectifier Diode Types W1856NC4 to W1856NC5 Old Type No: SW4-5CXC815 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive

More information

WESTCODE. Rectifier Diode Types W2820V#360 to W2820V#450 Old Type No.: SW36-45C/FXC1100. An IXYS Company. Date:- 9 Jul, Data Sheet Issue:- 1

WESTCODE. Rectifier Diode Types W2820V#360 to W2820V#450 Old Type No.: SW36-45C/FXC1100. An IXYS Company. Date:- 9 Jul, Data Sheet Issue:- 1 WESTCODE An IXYS Company Date:- 9 Jul, 24 Data Sheet Issue:- 1 Rectifier Diode Types W282V#36 to W282V#45 Old Type No.: SW36-45C/FXC11 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive

More information

WESTCODE. An IXYS Company. Date:- 16 Jun, Data Sheet Issue:- 1

WESTCODE. An IXYS Company. Date:- 16 Jun, Data Sheet Issue:- 1 WESTCODE An IXYS Company Date:- 16 Jun, 26 Data Sheet Issue:- 1 Provisional Data Rectifier Diode Type W428##25 to W428##32 Development Type No.: WX171##25-32 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM

More information

WESTCODE. Rectifier Diode Types W1520N#500 to W1520N#600 Old Part No.: SW46-58CXC620. An IXYS Company. Date:- 5 Apr, Data Sheet Issue:- 2

WESTCODE. Rectifier Diode Types W1520N#500 to W1520N#600 Old Part No.: SW46-58CXC620. An IXYS Company. Date:- 5 Apr, Data Sheet Issue:- 2 WESTCODE An IXYS Company Date:- 5 Apr, 26 Data Sheet Issue:- 2 Rectifier Diode Types W152N#5 to W152N#6 Old Part No.: SW46-58CXC62 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive

More information

WESTCODE. An IXYS Company. Date:- 10 Oct, Data Sheet Issue:- 1

WESTCODE. An IXYS Company. Date:- 10 Oct, Data Sheet Issue:- 1 WESTCODE An IXYS Company Date:- 1 Oct, 26 Data Sheet Issue:- 1 Provisional Data Wespack Rectifier Diode Types W5334MK2-W5334MK22 Previous Type No.: W4987MK2-22 Absolute Maximum Ratings VOLTAGE RATINGS

More information

Thyristor/Diode Modules M## 700 MCC MCD MDC MCA MCK MCDA MDCA

Thyristor/Diode Modules M## 700 MCC MCD MDC MCA MCK MCDA MDCA Date: 27.1.25 Data Sheet Issue: 2 Absolute Maximum Ratings Thyristor/Diode Modules M## 7 V RRM V DRM [V] MCC MCD MDC MCA MCK MCDA MDCA 12 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W

More information

Rectifier Diode Types W3270N#200 and W3270N#220 Old Type No.: SW20-22CXC14C

Rectifier Diode Types W3270N#200 and W3270N#220 Old Type No.: SW20-22CXC14C Date:- 23 October, 213 Data Sheet Issue:- 6 Rectifier Diode Types W327N#2 and W327N#22 Old Type No.: SW2-22CXC14C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse voltage,

More information

Thyristor/Diode Modules M## 500 MCC MCD MDC MCA MCK MCDA MDCA

Thyristor/Diode Modules M## 500 MCC MCD MDC MCA MCK MCDA MDCA Date: 19.9.25 Data Sheet Issue: 3 Absolute Maximum Ratings Thyristor/Diode Modules M## 5 V RRM V DRM [V] MCC MCD MDC MCA MCK MCDA MDCA 2 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 22 5-22io1 5-22io1

More information

Rectifier Diode Types W0507YH360 to W0507YH450 Previous Type No.: SW36-45HXC270

Rectifier Diode Types W0507YH360 to W0507YH450 Previous Type No.: SW36-45HXC270 Date:- 6 th March, 214 Data Sheet Issue:- 3 Rectifier Diode Types W57YH36 to W57YH45 Previous Type No.: SW36-45HXC27 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse

More information

Phase Control Thyristor Types N4085ZC080 to N4085ZC120 Old Type No.: N1600CH02-12

Phase Control Thyristor Types N4085ZC080 to N4085ZC120 Old Type No.: N1600CH02-12 Date:- 3 Jan, 23 Data Sheet Issue:- 1 Phase Control Thyristor Types N485ZC8 to N485ZC12 Old Type No.: N16CH2-12 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage,

More information

IXYS. Thyristor/Diode Modules MC#650. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS

IXYS. Thyristor/Diode Modules MC#650. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS Date: 13 th Mar 13 Data Sheet Issue: 1 Absolute Maximum Ratings Thyristor/Diode Modules MC#65 V RRM V DRM [V] 4 65-4io7 65-4io7 65-4io7 65-4io7 VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state

More information

IXYS. Thyristor/Diode Modules MC#500. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS

IXYS. Thyristor/Diode Modules MC#500. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS Date: 13 th Mar 13 Data Sheet Issue: 1 Absolute Maximum Ratings Thyristor/Diode Modules MC#5 V RRM V DRM [V] 3 5-3io7 5-3io7 5-3io7 5-3io7 36 5-36io7 5-36io7 5-36io7 5-36io7 VOLTAGE RATINGS MAXIMUM LIMITS

More information

Phase Control Thyristor Types N1467NC200 to N1467NC260

Phase Control Thyristor Types N1467NC200 to N1467NC260 Date:- 31 st July 2012 Data Sheet Issue:- 3 Phase Control Thyristor Types N1467NC200 to N1467NC260 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note

More information

Phase Control Thyristor Types N1075LN180

Phase Control Thyristor Types N1075LN180 Date:- 3 th April, 15 Data Sheet Issue:- 3 Phase Control Thyristor Types Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 18 V V DSM Non-repetitive

More information

Phase Control Thyristor Types N1588NC200 to N1588NC260

Phase Control Thyristor Types N1588NC200 to N1588NC260 Date:- 2 August 212 Data Sheet Issue:- 2 Phase Control Thyristor Types N1588NC2 to N1588NC26 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 2-26

More information

Phase Control Thyristor Types N2086NC060 to N2086NC100

Phase Control Thyristor Types N2086NC060 to N2086NC100 Date:- August 1 Data Sheet Issue:- 3 Phase Control Thyristor Types N86NC6 to N86NC1 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 6-1 V V DSM

More information

Phase Control Thyristor Types N3165HA260 and N3165HA280 Development Type No.: NX450HA260 and NX450HA280

Phase Control Thyristor Types N3165HA260 and N3165HA280 Development Type No.: NX450HA260 and NX450HA280 Date:- 8 th December, 214 Data Sheet Issue:- A1 Phase Control Thyristor Types N3165HA26 and N3165HA28 Development Type No.: NX45HA26 and NX45HA28 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS

More information

Phase Control Thyristor Types N0465WN140 and N0465WN160

Phase Control Thyristor Types N0465WN140 and N0465WN160 Date:- 4 th June, 214 Data Sheet Issue:- 4 Phase Control Thyristor Types N465WN14 and N465WN16 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1)

More information

Phase Control Thyristor Types N3533Z#140 to N3533Z#220 Old Type No.: N1400CH02-20

Phase Control Thyristor Types N3533Z#140 to N3533Z#220 Old Type No.: N1400CH02-20 WESTCODE An IXYS Company Date:- 18 Sept 27 Data Sheet Issue:- 2 Phase Control Thyristor Types N3533Z#14 to N3533Z#22 Old Type No.: N14CH2-2 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM

More information

Rectifier Diode Types W3708MC300 to W3708MC350

Rectifier Diode Types W3708MC300 to W3708MC350 Date:- 18 th May 2017 Data Sheet Issue:- 2 Rectifier Diode Types W3708MC300 to W3708MC350 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VRRM Repetitive peak reverse voltage, (note 1) 3000-3500

More information

Phase Control Thyristor Types N2500VC120 to N2500VC160

Phase Control Thyristor Types N2500VC120 to N2500VC160 WESTCODE Date:- 2 Nov, 21 Data Sheet Issue:- 1 Phase Control Thyristor Types N25VC12 to N25VC16 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VDRM Repetitive peak off-state voltage, (note 1)

More information

Symmetrical Gate Turn-Off Thyristor Types S0300SR12Y

Symmetrical Gate Turn-Off Thyristor Types S0300SR12Y Date: 21 Feb, 2014 Data Sheet Issue:- 2 Symmetrical Gate Turn-Off Thyristor Types bsolute Maximum Ratings MXIMUM VOLTGE RTINGS LIMITS UNITS V DRM Repetitive peak off-state voltage, (note 1) 1200 V V DSM

More information

Phase Control Thyristor Type SKT552/16E

Phase Control Thyristor Type SKT552/16E Date:- 4 Feb 22 Data Sheet Issue:- 3 Absolute Maximum Ratings Phase Control Thyristor Type VOLTAGE RATINGS Symbol Parameter MAXIMUM UNITS V DRM Repetitive peak off-state voltage, (note 1) 16 V V DSM Non-repetitive

More information

Phase Control Thyristor Types N1114LS120 to N1114LS180

Phase Control Thyristor Types N1114LS120 to N1114LS180 WESTCODE Date:- 6 Feb, 1 Data Sheet Issue:- 1 Phase Control Thyristor Types N1114LS1 to N1114LS18 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VDRM Repetitive peak off-state voltage, (note 1)

More information

Advanced Data Water Cooled Heatsink Type XW180GC34#

Advanced Data Water Cooled Heatsink Type XW180GC34# Advanced Data Water Cooled Heatsink Type Characteristics Double side cooling, 2 coolers + 1 Semiconductor Date: - 5 th November, 2009 Data Sheet Issue: - 2 PARAMETER TYP. TEST CONDITIONS UNITS R th (C/W)

More information

Fast Symmetrical Gate Turn-Off Thyristor Type H0700KC14# to H0700KC17#

Fast Symmetrical Gate Turn-Off Thyristor Type H0700KC14# to H0700KC17# Date:- 28 September, 22 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H7KC4# to H7KC7# Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS LIMITS UNITS V DRM Repetitive peak off-state

More information

5SDF 06D2504 Old part no. DM

5SDF 06D2504 Old part no. DM Fast Recovery Diode Properties 5SDF 6D254 Old part no. DM 827-62-25 Key Parameters Optimized recovery characteristics V RRM = 2 5 V Industry standard housing I FAVm = 615 A I FSM = 1 A Applications V TO

More information

Rectifier Diode 5SDD 11D2800

Rectifier Diode 5SDD 11D2800 V RSM = 3 V I F(AV)M = 1285 A I F(RMS) = 219 A I FSM = 15 1 3 A V F =.933 V r F =.242 mw Rectifier Diode 5SDD 11D28 Doc. No. 5SYA1166- Okt. 3 Very low on-state losses Optimum power handling capability

More information

Double Thyristor Module For Phase Control MT A2

Double Thyristor Module For Phase Control MT A2 Electrically isolated base plate Industrial standard package Simplified mechanical design, rapid assembly Pressure contact PROTON-ELECTROTEX RUSSIA Double Thyristor Module For Phase Control MT3-595-18-A2

More information

5SDF 0131Z0401. High Frequency Housingless Welding Diode. I FAVm = A I FSM = A V TO = V Applications r T = m.

5SDF 0131Z0401. High Frequency Housingless Welding Diode. I FAVm = A I FSM = A V TO = V Applications r T = m. 5SDF 131Z41 5SDF 131Z41 High Frequency Housingless Welding Diode Properties Key Parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 13 58 A I FSM = 7

More information

5SDD 36K5000 Old part no. DV 889B

5SDD 36K5000 Old part no. DV 889B Rectifier Diode Old part no. DV 889B-36-5 Properties Key Parameters Industry standard housing V RRM = 5 V Suitable for parallel operation I FAVm = 3 638 A High operating temperature I FSM = 45 A Low forward

More information

5SDD 0120C0400 Old part no. DS 879D

5SDD 0120C0400 Old part no. DS 879D Old part no. DS 879D-12-4 Welding diode Properties Key parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 11 3 A High operational reliability I FSM

More information

5SDF 08H6005 PRELIMINARY

5SDF 08H6005 PRELIMINARY V RRM = 5500 V (AV)M = 585 A SM = 18 10 3 A V (T0) = 4.5 V r T = 1.3 mw V DClink = 3300 V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Patented free-floating technology Industry standard housing Cosmic

More information

ST2600C..R SERIES 2630A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25199 rev. B 02/00 (R-PUK)

ST2600C..R SERIES 2630A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25199 rev. B 02/00 (R-PUK) ST2600C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Double side cooling High surge capability High mean current Fatigue free 2630A Typical Applications DC motor controls Controlled DC

More information

5SDF 13H4505. Fast Recovery Diode. Properties. Key Parameters. VRRM = V Enhanced Safe Operating Area. IFAVm = A Industry standard housing

5SDF 13H4505. Fast Recovery Diode. Properties. Key Parameters. VRRM = V Enhanced Safe Operating Area. IFAVm = A Industry standard housing 5SDF 13H455 5SDF 13H455 Fast Recovery Diode Properties Key Parameters Optimized soft recovery characteristics VRRM = 4 5 V Enhanced Safe Operating Area IFAVm = 1 393 A Industry standard housing IFSM =

More information

Asymmetric Gate turn-off Thyristor 5SGA 30J4502

Asymmetric Gate turn-off Thyristor 5SGA 30J4502 V DRM = 45 V I TGQM = 3 A I TSM = 24 1 3 A V T = 2.2 V r T =.6 mω V Dclink = 28 V Asymmetric Gate turn-off Thyristor 5SGA 3J452 Patented free-floating silicon technology Low on-state and switching losses

More information

Asymmetric Gate turn-off Thyristor 5SGA 15F2502

Asymmetric Gate turn-off Thyristor 5SGA 15F2502 V DRM = 2500 V I GQM = 1500 A I SM = 10 10 3 A V 0 = 1.45 V r = 0.90 mw V Dclink = 1400 V Asymmetric Gate turn-off hyristor 5SGA 15F2502 Patented free-floating silicon technology Low on-state and switching

More information

5SDD 71B0400 Old part no. DS 808D

5SDD 71B0400 Old part no. DS 808D Old part no. DS 88D-71-4 Welding diode Properties Key parameters High forward current capability VRRM = 4 V Low forward and reverse recovery losses IFAVm = 7 1 A High operational reliability IFSM = A VTO

More information

ST1230C..K SERIES 1745A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25194 rev. B 01/00. case style A-24 (K-PUK)

ST1230C..K SERIES 1745A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25194 rev. B 01/00. case style A-24 (K-PUK) ST1230C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk 1745A Typical

More information

5SGA 20H2501. Gate turn-off Thyristor. V DRM = I TGQM = 2000 A I TSM = 16 ka V T0 = 1.66 V r T = 0.57 mω V DClin = 1400 V

5SGA 20H2501. Gate turn-off Thyristor. V DRM = I TGQM = 2000 A I TSM = 16 ka V T0 = 1.66 V r T = 0.57 mω V DClin = 1400 V V DRM = 25 V I TGQM = 2 A I TSM = 16 ka V T = 1.66 V r T =.57 mω V DClin = 14 V Gate turn-off Thyristor Doc. No. 5SYA125-1 Jun. 4 Patented free-floating silicon technology Low on-state and switching losses

More information

Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms,

Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms, V RSM = 5500 V Rectifier Diode I (AV)M = 3480 A I (RMS) = 5470 A I SM = 46 10 3 A V 0 = 0.94 V r = 0.147 mw 5SDD 33L5500 Patented free-floating silicon technology Very low on-state losses Optimum power

More information

Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY

Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY V DRM = 4500 V I TGQM = 600 A I TSM = 3 10 3 A V T0 = 1.9 V r T = 3.5 mω V Dclink = 2800 V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Patented free-floating silicon technology Low on-state

More information

5SGA 15F2502. Gate turn-off Thyristor. V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V

5SGA 15F2502. Gate turn-off Thyristor. V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA 1214-01 Aug. 2000 Patented free-floating silicon technology

More information

ST303C..L SERIES 515A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25186 rev. A 05/94. case style TO-200AC (B-PUK)

ST303C..L SERIES 515A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25186 rev. A 05/94. case style TO-200AC (B-PUK) ST303C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed

More information

5SGF 30J4502. Gate turn-off Thyristor PRELIMINARY. V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V

5SGF 30J4502. Gate turn-off Thyristor PRELIMINARY. V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V Gate turn-off Thyristor 5SGF 30J4502 PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 Patented free-floating silicon

More information

ABB 5STP12F4200 Control Thyristor datasheet

ABB 5STP12F4200 Control Thyristor datasheet ABB 5STP12F4200 Control Thyristor datasheet http://www.manuallib.com/abb/5stp12f4200-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed

More information

5STP 18F1801 Old part no. T

5STP 18F1801 Old part no. T 5STP 18F181 Phase Control Thyristor Properties 5STP 18F181 Old part no. T 918-177-18 Key Parameters High operational capability V DRM, V RRM = 1 8 V Possibility of serial and parallel connection I TAVm

More information

MTC-500, MTK-500, MTA-500 Dual SCR Power Module

MTC-500, MTK-500, MTA-500 Dual SCR Power Module KKMTx5, December29 version MTC-5, MTK-5, MTA-5 s are designed for use in power electronic circuits and equipment under normal operating conditions. KEY PARAMETERS U DRM, U RRM I T(AV) I TSM du/dt* di/dt

More information

< HIGH VOLTAGE DIODE MODULES > RM400DG-90F. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers

< HIGH VOLTAGE DIODE MODULES > RM400DG-90F. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers I F 4A V RRM 45V 2-element in a Pack High insulated Type Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT

More information

T..HFL SERIES 40 A 70 A 85 A. FAST RECOVERY DIODES T-Modules. Features. Description. Major Ratings and Characteristics. Bulletin I27107 rev.

T..HFL SERIES 40 A 70 A 85 A. FAST RECOVERY DIODES T-Modules. Features. Description. Major Ratings and Characteristics. Bulletin I27107 rev. Bulletin 277 rev. B 09/06 T..HFL SERES FAST REOVERY DODES T-Modules Features Fast recovery time characteristics Electrically isolated base plate V RMS isolating voltage Standard JEDE package Simplified

More information

STARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600SGK120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD6SGK12C2S 12V/6A 1 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness. They

More information

Standard Rectifier Module

Standard Rectifier Module Standard ectifier Module M = 2x 12 I FA = 12A = 1.13 F Phase leg Part number MDD95-12N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-24AA Package with B ceramic Improved temperature

More information

Standard Rectifier Module

Standard Rectifier Module Standard ectifier Module M = 2x 16 I FA = 71A = 1.14 F Phase leg Part number MDD56-16N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-24AA Package with B ceramic Improved temperature

More information

Single Phase Fast Recovery Bridge (Power Modules), 61 A

Single Phase Fast Recovery Bridge (Power Modules), 61 A VS-SA6BA60 Single Phase Fast Recovery Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 600 V I O 6 A t rr 70 ns Type Modules - Bridge, Fast Package SOT-227 Circuit configuration Single

More information

Dual rugged ultrafast rectifier diode, 20 A, 150 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.

Dual rugged ultrafast rectifier diode, 20 A, 150 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. Rev. 04 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High reverse

More information

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD300HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD3HFY12C6S 12V/3A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

STARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD450HFY120C2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD45HFY12C2S 12V/45A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

Thyristor Modules Thyristor/Diode Modules

Thyristor Modules Thyristor/Diode Modules MCC MCD Thyristor Modules Thyristor/Diode Modules I TRMS = x 5 I TM = x RRM = -8 RSM RRM Type DSM DRM MCC -io MCD -io 5 4 MCC -4io MCD -4io 7 6 MCC -6io MCD -6io 9 8 MCC -8io MCD -8io 7 6 5 4 E787 Symbol

More information

Standard Rectifier Module

Standard Rectifier Module Standard ectifier Module = 2x16 M I = 31 A FA F = 1.3 Phase leg Part number MDD312-16N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 Package with B ceramic Improved temperature

More information

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A

ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A V CE = 25 V I C = 2 A ABB HiPak TM IGBT Module 5SNA 2E25 Doc. No. 5SYA 557-2 July 4 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

5SNA 2000K StakPak IGBT Module

5SNA 2000K StakPak IGBT Module Data Sheet, Doc. No. 5SYA 143-1-213 5SNA K4513 StakPak IGBT Module = 45 V = A Low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High tolerance to uneven mounting pressure Explosion

More information

Fast Recovery Diodes (Stud Version) 200 A

Fast Recovery Diodes (Stud Version) 200 A Fast Recovery Diodes (Stud Version) DO-9 (DO-05AB) PRMARY CHARACTERSTCS F(AV) Package DO-9 (DO-05AB) Circuit configuration Single FEATURES High power fast recovery diode series.0 μs to.0 μs recovery time

More information

STARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600HFY120C6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT 1V/A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications

More information

STARPOWER. Rectifier TD180PBS160C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER. Rectifier TD180PBS160C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR Rectifier TD180PBS160C5S 1600/180A in one-package General Description STARPOWER Rectifier Power Module provides ultra low conduction loss.they are designed for the applications

More information

SD4000C..R SERIES 4450A. Hockey Puk Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics

SD4000C..R SERIES 4450A. Hockey Puk Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics SD00C..R SERIES STANDARD RECOVERY DIODES Hockey Puk Version Features Wide current range High voltage ratings up to 00V High surge current capabilities Diffused junction Hockey Puk version Case style B-44

More information

ST733C..L SERIES 940A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25188 rev. A 04/00. case style TO-200AC (B-PUK)

ST733C..L SERIES 940A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25188 rev. A 04/00. case style TO-200AC (B-PUK) ST733C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed

More information

5SGS 08D4500 Old part no. TG

5SGS 08D4500 Old part no. TG Old part no. TG 97-8-45 Gate Turn-off Thyristor Properties Key Parameters Full reverse voltage V DRM, V RRM = 4 5 V High reliability I TGQM = 8 A Suitable for drives and traction applications I TAVm =

More information

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode IDH12S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary

More information

ABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A

ABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A V CE = 33 V I C = 8 A ABB HiPak TM IGBT Module 5SNA 8N33 Doc. No. 5SYA 59- Jan 7 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC

More information

ST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK)

ST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK) ST0C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-0AC (B-PUK) 910A Typical Applications DC motor

More information

10 23, 24 21, 22 19, , 14

10 23, 24 21, 22 19, , 14 MWI -T7T Six-Pack Trench IGBT = S = (sat) typ. = 1.7 Part name (Marking on product) MWI -T7T, 1, 1 1 9 17 NTC 1 3, 1, 19, E773 1 3 7 11 Pin configuration see outlines. 7, 13, 1 Features: Trench IGBT technology

More information

Converter - Brake - Inverter Module XPT IGBT

Converter - Brake - Inverter Module XPT IGBT MIXWBTML Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 1 2 = 17 2 = 28 I FSM = 3 CE(sat) = 1.8 CE(sat) = 1.8 Part name

More information

STARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD600HFT120C2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD600HFT120C2S_G8 1200V/600A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are

More information

STARPOWER IGBT GD25FST120L2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD25FST120L2S_G8. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD2FST2L2S_G8 2V/2A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

Converter - Brake - Inverter Module XPT IGBT

Converter - Brake - Inverter Module XPT IGBT MIXWBTMH Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = 16 CES = Three Phase Inverter CES = I DM2 = 2 = 28 2 = 28 I FSM = 27 CE(sat) = 1.8 CE(sat) = 1.8 Part name

More information

ST183C..C SERIES 370A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25178 rev. B 04/00. case style TO-200AB (A-PUK)

ST183C..C SERIES 370A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25178 rev. B 04/00. case style TO-200AB (A-PUK) ST83C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AB (A-PUK) All diffused design Center amplifying gate Guaranteed high

More information

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6 12 13 E72873

More information

PHP7NQ60E; PHX7NQ60E

PHP7NQ60E; PHX7NQ60E Rev. 1 2 August 22 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ6E in TO-22AB (SOT78) PHX7NQ6E in isolated TO-22AB. 2. Features Very

More information

STARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD40PIY120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD4PIY12C5S 12V/4A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L4503

Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L4503 V DRM = 45 V I TGQM = 4 A I TSM = 32 ka V T =.4 V r T =.325 mω V DClink = 28 V Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L453 Highest snubberless turn-off rating Suitable for series connection

More information

ST223C..C SERIES 390A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25174 rev. B 04/00. case style TO-200AB (A-PUK)

ST223C..C SERIES 390A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25174 rev. B 04/00. case style TO-200AB (A-PUK) ST223C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-0AB (A-PUK) All diffused design Center amplifying gate Guaranteed

More information

P100 SERIES 25A PASSIVATED ASSEMBLED CIRCUIT ELEMENTS. Features. Description. Major Ratings and Characteristics. Bulletin I27125 rev.

P100 SERIES 25A PASSIVATED ASSEMBLED CIRCUIT ELEMENTS. Features. Description. Major Ratings and Characteristics. Bulletin I27125 rev. P0 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate 25A Available up to 200 V RRM, V DRM High dynamic characteristics

More information

3 1/4. Features / Advantages: Applications: Package: SOT-227B (minibloc)

3 1/4. Features / Advantages: Applications: Package: SOT-227B (minibloc) MCO5-6io hyristor RRM = 6 A = 57A =. Single hyristor Part number MCO5-6io Backside: isolated 3 /4 Features / Advantages: Applications: Package: SO-7B (minibloc) hyristor for line frequency Planar passivated

More information

L K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H

L K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H Three Phase Converter + Three Phase Inverter + Brake A ( PLACES) G J L L L P P1 N GU EU GV EV GW EW GU GVGW GB E Q C R D LABEL D U B R S T S V 3 MAIN TERMINAL X P P1 Outline Drawing and Circuit Diagram

More information

STARPOWER. Rectifier RD180PBS180C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER. Rectifier RD180PBS180C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR Rectifier 1800V/180A 6 in one-package General Description STARPOWER Rectifier Power Module provides ultra low conduction loss.they are designed for the applications such as SMPS.

More information

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: SOT-227B (minibloc) IX7R1N XPT CS 1 I C5 1 1.8 C(sat) Boost Chopper Part number IX7R1N Backside: isolated 3 1 Features / dvantages: pplications: Package: SOT-7B (minibloc) asy paralleling due to the positive temperature coefficient

More information

Features / Advantages: Applications: Package: Y4

Features / Advantages: Applications: Package: Y4 hyristor Module RRM = 2x 4 A = 26A =. Phase leg Part number MCC2-4io Backside: isolated 3 2 6 7 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency Planar passivated chip Long-term

More information

D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7

D1 D2 D3 T1 T2 T3 5 D4 D5 D6 T4 T5 T6 7 MIX 11WEH Six-Pack XPT IGBT CES 5 = = 155 CE(sat) = 1. Part name (Marking on product) MIX11WEH 13, 1 1 D1 D D3 T1 T T3 5 9 1 19 17 15 E773 3 D D5 D T T5 T 7 11 1, Features: Easy paralleling due to the

More information

Converter - Brake - Inverter Module XPT IGBT

Converter - Brake - Inverter Module XPT IGBT MIX3WBTED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper RRM = CES = Three Phase Inverter CES = I DM = 5 5 = 7 5 = 43 I FSM = 3 CE(sat) =. CE(sat) =. Part name (Marking

More information

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology

Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology MUBW 5-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6

More information

STARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD25FSY120L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD25FSY2L2S 2V/25A 6 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

IRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor

IRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor M3D3 Rev. 4 August Product data. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT48 (D-PAK).. Features Fast switching

More information

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode IDH8S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary

More information

ST333C..L SERIES 620A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25187 rev. B 04/00. case style TO-200AC (B-PUK)

ST333C..L SERIES 620A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25187 rev. B 04/00. case style TO-200AC (B-PUK) ST333C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed

More information

PHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.

PHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1. M3D3 Rev. 1 16 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold

More information

STARPOWER IGBT GD30PJT60L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

STARPOWER IGBT GD30PJT60L2S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR STARPOWER SEMICONDUCTOR IGBT GD3PJT6L2S 6V/3A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed

More information

Sensitive SCRs. ( Amps) Features. Electrically Isolated Packages. Glass Passivation

Sensitive SCRs. ( Amps) Features. Electrically Isolated Packages. Glass Passivation Selected Packages* U.L. RECOGNIZED File #E71639 TO - 92 THERMOTAB TO-2AB TO-2AB A K G Sensitive SCRs (.8 1 ) 5 General Description The Teccor Electronics, Inc. line of sensitive SCR semiconductors are

More information

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode IDB1S6C 2 nd Generation thinq! TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery Product Summary

More information

Blocking Maximum rated values 1) Parameter Symbol Conditions 5SDF 28L4520 Unit Repetitive peak reverse voltage

Blocking Maximum rated values 1) Parameter Symbol Conditions 5SDF 28L4520 Unit Repetitive peak reverse voltage VRRM = 4500 V ast Recovery Diode I(AV)M = 2620 A ISM = 56 10 3 A V0 = 1.10 V r = 0.47 mω VDC-Link = 2800 V 5SD 28L4520 Doc. No. 5SYA1185-03 Jan. 17 Industry standard housing Cosmic radiation withstand

More information

PHP/PHD3055E. TrenchMOS standard level FET. Product availability: PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK).

PHP/PHD3055E. TrenchMOS standard level FET. Product availability: PHP3055E in SOT78 (TO-220AB) PHD3055E in SOT428 (D-PAK). PHP/PHD355E Rev. 6 25 March 22 Product data 1. Description N-channel standard level field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHP355E in SOT78

More information