5SGA 15F2502. Gate turn-off Thyristor. V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V

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1 V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA Aug Patented free-floating silicon technology Low on-state and switching losses Annular gate electrode Industry standard housing Cosmic radiation withstand rating Blocking V DRM Repetitive peak off-state voltage 2500 V V GR 2V V RRM Repetitive peak reverse voltage 17 V I DRM Repetitive peak off-state current 100 ma V D = V DRM V GR 2V I RRM Repetitive peak reverse current 50 ma V R = V RRM R GK = V DClink Permanent DC voltage for 100 FIT failure rate 1400 V 0 T j 125 C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 19) F m A Mounting force Acceleration: Device unclamped Device clamped min. max. 14 kn 16 kn 50 m/s m/s 2 M Weight 0.6 kg D S Surface creepage distance 25 mm D a Air strike distance 15 mm

2 GTO Data On-state I TAVM Max. average on-state current 550 A Half sine wave, T C = 85 C I TRMS Max. RMS on-state current 870 A 5SGA 15F2502 I TSM Max. peak non-repetitive 10 ka t P = 10 ms T j = 125 C surge current 20 ka t P = 1 ms After surge: I 2 t Limiting load integral A 2 s t P = 10 ms V D = V R = 0V A 2 s t P = 1 ms V T On-state voltage 2.50 V I T = 1500 A V T0 Threshold voltage 1.55 V I T = A T j = 125 C r T Slope resistance 0.63 mω I H Holding current 50 A T j = 25 C Gate V GT Gate trigger voltage 1.5 V V D = 24 V T j = 25 C I GT Gate trigger current 1.5 A R A = 0.1 Ω V GRM Repetitive peak reverse voltage 17 V I GRM Repetitive peak reverse current 20 ma V GR = V GRM Turn-on switching di/dt crit Max. rate of rise of on-state 400 A/µs f = 200Hz I T = 1500 A, T j = 125 C current 600 A/µs f = 1Hz I GM = 30 A, di G /dt = 20 A/µs t d Delay time 2.0 µs V D = 0.5V DRM T j = 125 C t r Rise time 4.0 µs I T = 1500 A di/dt = 200 A/µs t on(min) Min. on-time 80 µs I GM = 30A di G /dt = 20 A/µs E on Turn-on energy per pulse 0.50 Ws C S = 3µF R S = 5Ω Turn-off switching Max controllable turn-off I TGQM 1500 A V DM = V DRM di GQ /dt = 30 A/µs current C S = 3 µf L S 0.3 µh t s Storage time 15.0 µs V D = ½ V DRM V DM = V DRM t f Fall time 2.0 µs T j = 125 C di GQ /dt = 30 A/µs t off(min) Min. off-time 80 µs I TGQ = I TGQM E off Turn-off energy per pulse 2.0 Ws C S = 3 µf R S = 5Ω I GQM Peak turn-off gate current 450 A L S 0.3 µh Doc. No. 5SYA Aug page 2 of 9

3 Thermal T j Storage and operating C junction temperature range R thjc Thermal resistance 49 K/kW Anode side cooled junction to case 60 K/kW Cathode side cooled 27 K/kW Double side cooled R thch Thermal resistance case to 16 K/kW Single side cooled heat sink 8 K/kW Double side cooled 5SGA 15F2502 Analytical function for transient thermal impedance: Z thjc (t) = 4 i= 1 R i(1 - e - t / τ i ) i R I (K/kW) τ i (s) Fig. 1 Transient thermal impedance, junction to case. Doc. No. 5SYA Aug page 3 of 9

4 Fig. 2 On-state characteristics Fig. 3 Average on-state power dissipation vs. average on-state current. Fig. 4 Surge current and fusing integral vs. pulse width Doc. No. 5SYA Aug page 4 of 9

5 Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 7 Forwarde gate current vs. forard gate voltage. Fig. 8 Gate trigger current vs. junction temperature Doc. No. 5SYA Aug page 5 of 9

6 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: di G /dt = 20 A/µs C S = 3 µf R S = 5 Ω Tj = 125 C Definition of Turn-on energy: E on 20 µ s = V 0 D ITdt (t = 0, IG = 0.1 I Common Test conditions for figures 12, 13 and 15: GM ) Definition of Turn-off energy: E off 40 µ s = V 0 D ITdt ( t = 0, IT = 0.9 I TGQ ) Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. Doc. No. 5SYA Aug page 6 of 9

7 Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Fig. 14 Required snubber capacitor vs. max allowable turn-off current. Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate current vs. turn-off current Doc. No. 5SYA Aug page 7 of 9

8 Fig. 18 General current and voltage waveforms with GTO-specific symbols Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Doc. No. 5SYA Aug page 8 of 9

9 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage V R may exceed the rate value V RRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : V GR = V. ABB Semiconductors AG Doc. No. 5SYA Aug Fabrikstrasse 2 CH-5600 Lenzburg, Switzerland Tel: +41 (0) Fax: +41 (0) info@ch.abb.com Internet