ST303C..L SERIES 515A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25186 rev. A 05/94. case style TO-200AC (B-PUK)

Transcription

1 ST303C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capibility Low thermal impedance High speed performance 55A Typical Applications Inverters Choppers Induction heating All types of force-commutated converters case style TO-AC (B-PUK) Major Ratings and Characteristics Parameters ST303C..L Units I T(AV) 55 T hs 55 C I T(RMS) 995 T hs 25 C I Hz 79 Hz 8320 A I 2 Hz 36 KA2 Hz 289 KA 2 s V DRM /V RRM 0 to 0 V t q range (*) 0 to 30 µs T J - to 25 C (*) t q = 0 to 20µs for 0 to 0V devices t q = 5 to 30µs for 0 to 0V devices

2 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, maximum V RSM, maximum I DRM /I RRM Type number Code repetitive peak voltage non-repetitive peak T J V V ma 04 0 ST303C..L Current Carrying Capability Frequency I TM I TM I TM Units o el o el µs Hz Hz Hz A Hz Recovery voltage Vr Voltage before turn-on Vd V DRM V DRM V DRM V Rise of on-state current di/dt A/µs Heatsink temperature C Equivalent values for RC circuit 0Ω / 0.47µF 0Ω / 0.47µF 0Ω / 0.47µF On-state Conduction I T(AV) Max. average on-state current 55 () A conduction, half sine Heatsink temperature 55 (85) C double side (single side) cooled I T(RMS) Max. RMS on-state current C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 79 t = 0ms No voltage non-repetitive surge current 8320 A t = 8.3ms reapplied 66 t = 0ms % V RRM 00 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 36 t = 0ms No voltage Initial T J max 289 t = 8.3ms reapplied 224 KA 2 s t = 0ms % V RRM 204 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 3 KA 2 s t = 0. to 0ms, no voltage reapplied 2

3 On-state Conduction V TM Max. peak on-state voltage 2.6 I TM = 255A, T J max, t p = 0ms sine wave pulse V T(TO) Low level value of threshold voltage V T(TO)2 High level value of threshold voltage V (6.7% x π x I T(AV) < I < π x I T(AV) ), T J (I > π x I T(AV) ), T J r t Low level value of forward 0.57 slope resistance mω (6.7% x π x I T(AV) < I < π x I T(AV) ), T J r High level value of forward t2 slope resistance 0.56 (I > π x I T(AV) ), T J I H Maximum holding current 0 T J = 25 C, I T > 30A ma I L Typical atching current 0 T J = 25 C, V A = 2V, Ra = 6Ω, I G = A Switching di/dt Max. non-repetitive rate of rise T J max, V DRM = rated V 0 A/µs DRM of turned-on current I TM = 2 x di/dt T J = 25 C, V DM = rated V DRM, I TM = A DC, t p = µs t Typical delay time 0.83 d Resistive load Gate pulse: 0V, 5Ω source µs Min Max T J max, I TM = 5A, commutating di/dt = A/µs t q Max. turn-off time (*) 0 30 V R = V, t p = µs, dv/dt: see table in device code (*) t = 0 to 20µs for 0 to 0V devices; t = 5 to 30µs for 0 to 0V devices. q q Blocking dv/dt Maximum critical rate of rise of T J linear to % V DRM, higher value V/µs off-state voltage available on request I RRM Max. peak reverse and off-state ma T I DRM leakage current J max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power P G(AV) Maximum average gate power 0 W T J max, f = Hz, d% = I GM Max. peak positive gate current 0 A T J max, t p 5ms +V GM Maximum peak positive gate voltage 20 -V GM V T J max, t p 5ms Maximum peak negative 5 gate voltage I GT Max. DC gate current required to trigger I GD Max. DC gate current not to trigger ma 20 ma V GT Max. DC gate voltage required to trigger V GD 3 Max. DC gate voltage not to trigger V 0.25 V T J = 25 C, V A = 2V, Ra = 6Ω T J max, rated V DRM applied 3

4 Thermal and Mechanical Specification T J Max. operating temperature range - to 25 T stg Max. storage temperature range - to C R thj-hs Max. thermal resistance, 0. DC operation single side cooled K/W junction to heatsink 0.05 DC operation double side cooled R thc-hs Max. thermal resistance, 0.0 K/W DC operation single side cooled case to heatsink DC operation double side cooled F Mounting force, ± 0% N (0) (Kg) wt Approximate weight 2 g Case style TO - AC (B-PUK) See Outline Table R thj-hs Conduction (The following table shows the increment of thermal resistence R thj-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions Single Side Double Side Single Side Double Side T J K/W Ordering Information Table Device Code ST 30 3 C 2 L H K Thyristor 2 - Essential part number 3-3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - L = Puk Case TO-AC (B-PUK) dv/dt - t q combinations available 7 - Reapplied dv/dt code (for t q test condition) dv/dt (V/µs) t q code t q (µs) 0 CN DN EN FN * HN 2 CM DM EM FM HM 9-0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) up to 0V 5 CL DL EL FL * HL = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 20 CK DK EK FK * HK t 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) q (µs) 5 CL CP DP only for 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 20 CK DK EK FK * HK 0/0V 25 CJ DJ EJ FJ * HJ 0 - Critical dv/dt: DH EH FH HH None = V/µsec (Standard value) *Standard part number. L = 0V/µsec (Special selection) All other types available only on request. 4

5 Outline Table 0.7 (0.03) MIN. 34 (.34) DIA. MAX. TWO PLACES 27 (.06) MAX. 0.7 (0.03) MIN. 53 (2.09) DIA. MAX. 6.2 (0.24) MIN. PIN RECEPTACLE AMP Case Style TO-AC (B-PUK) All dimensions in millimeters (inches) 58.5 (2.3) DIA. MAX. 4.7 (0.8) 20 ± (.44) 2 HOLES DIA. 3.5 (0.4) x 2.5 (0.) DEEP CREPAGE DISTANCE (.430) MIN. STRIKE DISTANCE 7.43 (0.686) MIN. Maximum Allowable Heatsink Temperature ( C) 30 (Single Side Cooled) R thj-hs (DC) = 0. K/W 0 Conduction Angle Maximum Allowable Heatsink Temperature ( C) 30 (Single Side Cooled) 0 R thj-hs(dc) = 0. K/W Conduction Period DC Fig. - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 5

6 Maximum Allowable Heatsink Temperature ( C) 30 (Double Side Cooled) R (DC) = 0.05 K/W 0 thj-hs Conduction Angle Maximum Allowable Heatsink Temperature ( C) 30 0 (Double Side Cooled) R thj-hs (DC) = 0.05 K/W Conduction Period 30 DC Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) RMS Limit Conduction Angle 0 T J = 25 C Fig. 5 - On-state Power Loss Characteristics Maximum Average On-state Power Loss (W) DC RMS Limit 0 0 Conduction Period 0 0 T J = 25 C Fig. 6 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J = 25 Hz Hz 0.0 s 0 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 25 C J No Voltage Reapplied Rated V Reapplied RRM Pulse Train Duration (s) Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled 6

7 Instantaneous On-state Current (A) 00 0 T = 25 C J T = 25 C J Instantaneous On-state Voltage (V) Fig. 9 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z thj-hs (K/W) Steady State Value R thj-hs = 0. K/W (Single Side Cooled) R thj-hs = 0.05 K/W (Double Side Cooled) (DC Operation) Square Wave Pulse Duration (s) Fig. 0 - Thermal Impedance Z thj-hs Characteristics Maximum Reverse Recovery Charge - Qrr (µc) I TM = 0 A 2 A A 2 A 220 A T J = 25 C Rate Of Fall Of On-state Current - di/dt (A/µs) Maximum Reverse Recovery Current - Irr (A) I TM = 0 A A 300 A A A T = 25 C J Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. - Reverse Recovered Charge Characteristics Fig. 2 - Reverse Recovery Current Characteristics E4 Peak On-state Current (A) E3 0 Hz Fig. 3 - Frequency Characteristics 0 0 Sinusoidal pulse Sinusoidal pulse T C = C T C = 55 C E2 E E2 E3 E4 E4E E E2 E3 E4 0 R s = 0 ohms C s = 0.47 µf V D = % VDRM Hz R s = 0 ohms C s = 0.47 µf V D = % VDRM 7

8 Peak On-state Current (A) E4 R = 0 ohms R s = 0 ohms s C = 0.47 µf C s s = 0.47 µf V D = % VDRM V D = % VDRM Hz 0 Hz E E2 Trapezoidal pulse Trapezoidal pulse T C = C T C = 55 C di/dt = A/µs di/dt = A/µs E E E2 E3 E4 E E2 E3 E4 Fig. 4 - Frequency Characteristics Peak On-state Current (A) E4 E3 R s = 0 ohms C s = 0.47 µf V D = % VDRM 0 0 Hz R s = 0 ohms C s = 0.47 µf V D = % VDRM E2 Trapezoidal pulse Trapezoidal pulse T C = C T C = 55 C di/dt = A/µs di/dt = A/µs E E E2 E3 E4 E4E E E2 E3 E4 Fig. 5 - Frequency Characteristics 0 0 Hz Peak On-state Current (A) E5 Rectangular pulse E4 di/dt = A/µs 20 joules per pulse 0 20 joules per pulse E E Sinusoidal pulse E E E2 E3 E4 E4E E E2 E3 E4 Fig. 6 - Maximum On-state Energy Power Loss Characteristics 8

9 Instantaneous Gate Voltage (V) Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 0ohms; tr<= µs b) Recommended load line for <=30% rated di/dt : 0V, 0ohms tr<= µs 0 VGD Tj=25 C (b) Tj=25 C IGD Device: Frequency Limited by PG(AV) Tj=- C (a) Instantaneous Gate Current (A) () PGM = 0W, = 20ms (2) PGM = 20W, = 0ms (3) PGM = W, = 5ms (4) PGM = W, = 3.3ms () (2) (3) (4) Fig. 7 - Gate Characteristics 9