5SGS 08D4500 Old part no. TG
|
|
- Suzan Webb
- 5 years ago
- Views:
Transcription
1 Old part no. TG Gate Turn-off Thyristor Properties Key Parameters Full reverse voltage V DRM, V RRM = 4 5 V High reliability I TGQM = 8 A Suitable for drives and traction applications I TAVm = 285 A I TSM = 4 A V TO = 1.77 V r T = 3.16 m Types V DRM, V RRM Conditions: 4 5 V T j = C, half sine waveform, f = 5Hz Mechanical Data F m Mounting force 5 ± 1 kn m Weight.3 kg D S D a Surface creepage distance Air strike distance 25 mm 13 mm Fig. 1 Case ABB s.r.o. Novodvorska 1768/138a, Praha 4, Czech Republic tel.: , TS - TG/79/2c Sep-11 1 of 6
2 Maximum Ratings Maximum Limits Unit V DRM V RRM I TGQM Repetitive peak off-state and peak reverse voltage T j = C, V GC = -2 V Peak Turn-off current T j = C, C S =2 µf, di GC /dt = -25 A/µs, 4 5 V 8 A I TRMS I TAVm V DM =.8 V DRM RMS on-state current T c = 7 C, half sine waveform, f = 5 Hz Average on-state current T c = 7 C, half sine waveform, f = 5 Hz 45 A 285 A I TSM I 2 t (di T /dt) cr (dv D /dt) cr V DSP Peak non-repetitive surge half sine pulse, t p = 1 ms, V R = V Limiting load integral half sine pulse, t p = 1 ms, V R = V Critical rate of rise of on-state current I T = I TGQM, V D = 2/3 V DRM, f = 5 Hz Critical rate of rise of off-state voltage V D = 2/3 V DRM, V GC = - 2 V Peak turn-off voltage spike due to snubber 4 A 8 A 2 s 4 A/µs 1 V/µs 5 V I FGCM Peak forward gate current 3 A I GCMS RMS gate current 25 A V GCM Peak reverse gate voltage -16 V t on(min) Minimum permissible on-time 5 s t off(min) Minimum permissible off-time 1 s T jmin - T jmax Operating temperature range C T stgmin - T stgmax Storage temperature range C Unless otherwise specified T j = 115 C Recommended Diodes Type of GTO Thyristor SNUBBER FREEWHEEL 5SDF 4D454 5SDF 4D454 TS - TG/79/2c Sep-11 2 of 6
3 Characteristics Value Unit V TM Maximum peak on-state voltage I GT = 2 A, I TM =8 A min. typ. max V V T Threshold voltage 1.77 V r T I L I DM I RM Slope resistance I T1 = 333 A, I T2 = 1 A Latching current T j = 25 C Peak off-state current V D = V DRM, V GC = -2 V Peak reverse current 3.16 m 4 A 5 ma 5 ma I GCM V GT I GT t f t S t gq t tail V R = V RRM Peak negative gate leakage current V GC = -16 V Gate trigger voltage T j = C Gate trigger current V D = 12 V, R L =.1 Fall time Storage time Turn-off time Tail time Unless otherwise specified T j = 115 C T j = - 4 C T j = 25 C T j = 125 C Definitions as on Fig.9 V D = 2/3 V DRM, I TGQ = I TGQM, C S = 2 F, V GC = -15 V, di GC /dt = -25 A/ s 5 ma 1.5 V A µs Thermal Parameters Value Unit R thjc R thch Thermal resistance junction to case double side cooling Thermal resistance case to heatsink, double side cooling 4 K/kW 12 K/kW TS - TG/79/2c Sep-11 3 of 6
4 Z thjc ( K/kW ) Transient Thermal Impedance Analytical function for transient thermal impedance Z thjc 4 i 1 R (1 exp( t / )) i Conditions: F m = 5 ± 1 kn, Double side cooled i i R i ( K/kW ) i ( s ) D = 9% 8% 3 7% 25 6% 2 5% 15 4% 3% 1 2% 5 1% single,1,1,1,1 1 1 Square w ave pulse duration t d ( s ) Fig.2 Transient thermal impedance junction to case (Double side cooled) IT ( A ) 12 1 T j = 25 C 115 C PT ( W ) D =1% 9% 8% 7% 6% 5% 8 14 I TRMSmax 4% % % 2 4 1% V T ( V ) I TAV ( A ) Fig.3 Maximum instaneous on-state characteristics Fig.4 Power losses vs Rectangular pulse current TS - TG/79/2c Sep-11 4 of 6
5 I GT ( A ) I GT normalized I TGQM ( A ) R GC ( ) C S ( µf ) Fig.5 Maximum permissible peak turn-off current vs snubber capacitance V DR normalized ( % of V DRM ) Fig.6 Maximum forward blocking voltage vs External gate-cathode resistance Typical T j ( C ) Fig.7 Maximum gate trigger current vs Junction temperature T j ( C ) Fig.8 Gate trigger current normalized to I GT by 25 C vs Junction temperature TS - TG/79/2c Sep-11 5 of 6
6 Won ( J ) 1..8 Woff ( J ) I T ( A ) I TGQ ( A ) Fig.9 Maximum turn-on energy per pulse vs. on-state current, V D = 1 V, di T /dt = 2 A/µs, C S = 2 µf, R S = 5, T j = T jmax Fig.1 Maximum turn-off energy per pulse vs. turn-off current, V D = 225 V, C S = 2 µf, R S = 5, di GC /dt = -25 A/ s, T j = T jmax Fig.11 Turn-off waveform diagram Notes: TS - TG/79/2c Sep-11 6 of 6
5STP 18F1801 Old part no. T
5STP 18F181 Phase Control Thyristor Properties 5STP 18F181 Old part no. T 918-177-18 Key Parameters High operational capability V DRM, V RRM = 1 8 V Possibility of serial and parallel connection I TAVm
More information5SDF 0131Z0401. High Frequency Housingless Welding Diode. I FAVm = A I FSM = A V TO = V Applications r T = m.
5SDF 131Z41 5SDF 131Z41 High Frequency Housingless Welding Diode Properties Key Parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 13 58 A I FSM = 7
More information5SDF 06D2504 Old part no. DM
Fast Recovery Diode Properties 5SDF 6D254 Old part no. DM 827-62-25 Key Parameters Optimized recovery characteristics V RRM = 2 5 V Industry standard housing I FAVm = 615 A I FSM = 1 A Applications V TO
More information5SDD 36K5000 Old part no. DV 889B
Rectifier Diode Old part no. DV 889B-36-5 Properties Key Parameters Industry standard housing V RRM = 5 V Suitable for parallel operation I FAVm = 3 638 A High operating temperature I FSM = 45 A Low forward
More information5SDD 0120C0400 Old part no. DS 879D
Old part no. DS 879D-12-4 Welding diode Properties Key parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 11 3 A High operational reliability I FSM
More information5SDF 13H4505. Fast Recovery Diode. Properties. Key Parameters. VRRM = V Enhanced Safe Operating Area. IFAVm = A Industry standard housing
5SDF 13H455 5SDF 13H455 Fast Recovery Diode Properties Key Parameters Optimized soft recovery characteristics VRRM = 4 5 V Enhanced Safe Operating Area IFAVm = 1 393 A Industry standard housing IFSM =
More information5SDD 71B0400 Old part no. DS 808D
Old part no. DS 88D-71-4 Welding diode Properties Key parameters High forward current capability VRRM = 4 V Low forward and reverse recovery losses IFAVm = 7 1 A High operational reliability IFSM = A VTO
More information5SGA 15F2502. Gate turn-off Thyristor. V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V
V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA 1214-01 Aug. 2000 Patented free-floating silicon technology
More information5SGA 20H2501. Gate turn-off Thyristor. V DRM = I TGQM = 2000 A I TSM = 16 ka V T0 = 1.66 V r T = 0.57 mω V DClin = 1400 V
V DRM = 25 V I TGQM = 2 A I TSM = 16 ka V T = 1.66 V r T =.57 mω V DClin = 14 V Gate turn-off Thyristor Doc. No. 5SYA125-1 Jun. 4 Patented free-floating silicon technology Low on-state and switching losses
More information5SGF 30J4502. Gate turn-off Thyristor PRELIMINARY. V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V
V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V Gate turn-off Thyristor 5SGF 30J4502 PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 Patented free-floating silicon
More informationAsymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY
V DRM = 4500 V I TGQM = 600 A I TSM = 3 10 3 A V T0 = 1.9 V r T = 3.5 mω V Dclink = 2800 V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Patented free-floating silicon technology Low on-state
More informationAsymmetric Gate turn-off Thyristor 5SGA 30J4502
V DRM = 45 V I TGQM = 3 A I TSM = 24 1 3 A V T = 2.2 V r T =.6 mω V Dclink = 28 V Asymmetric Gate turn-off Thyristor 5SGA 3J452 Patented free-floating silicon technology Low on-state and switching losses
More informationABB 5STP12F4200 Control Thyristor datasheet
ABB 5STP12F4200 Control Thyristor datasheet http://www.manuallib.com/abb/5stp12f4200-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed
More informationAsymmetric Integrated Gate- Commutated Thyristor 5SHY 35L4503
V DRM = 45 V I TGQM = 4 A I TSM = 32 ka V T =.4 V r T =.325 mω V DClink = 28 V Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L453 Highest snubberless turn-off rating Suitable for series connection
More informationPhase Control Thyristor Type SKT552/16E
Date:- 4 Feb 22 Data Sheet Issue:- 3 Absolute Maximum Ratings Phase Control Thyristor Type VOLTAGE RATINGS Symbol Parameter MAXIMUM UNITS V DRM Repetitive peak off-state voltage, (note 1) 16 V V DSM Non-repetitive
More information5STF 11F3010 Old part no. TR Fast Thyristor
5STF 11F31 5STF 11F31 Old par no. TR 918-111-3 Fas Thyrisor Properies Key Parameers Amplifying gae V DRM, V RRM = 3 V High operaional capabiliy I TAV = 1 11 A Opimized urn-off parameers I TSM = 1. ka V
More information5STF 07T1414 Old part no. TR 907FC
5STF 7T1414 Medium Frequency Thyrisor Properies 5STF 7T1414 Old par no. TR 97FC-74-14 Key Parameers Amplifying gae V DRM, V RRM = 1 4 V High operaional capabiliy I TAV = 736 A Opimized urn-on and urn-off
More informationAsymmetric Gate turn-off Thyristor 5SGA 15F2502
V DRM = 2500 V I GQM = 1500 A I SM = 10 10 3 A V 0 = 1.45 V r = 0.90 mw V Dclink = 1400 V Asymmetric Gate turn-off hyristor 5SGA 15F2502 Patented free-floating silicon technology Low on-state and switching
More informationST1230C..K SERIES 1745A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25194 rev. B 01/00. case style A-24 (K-PUK)
ST1230C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk 1745A Typical
More informationST2600C..R SERIES 2630A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25199 rev. B 02/00 (R-PUK)
ST2600C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Double side cooling High surge capability High mean current Fatigue free 2630A Typical Applications DC motor controls Controlled DC
More informationDouble Thyristor Module For Phase Control MT A2
Electrically isolated base plate Industrial standard package Simplified mechanical design, rapid assembly Pressure contact PROTON-ELECTROTEX RUSSIA Double Thyristor Module For Phase Control MT3-595-18-A2
More informationRectifier Diode 5SDD 11D2800
V RSM = 3 V I F(AV)M = 1285 A I F(RMS) = 219 A I FSM = 15 1 3 A V F =.933 V r F =.242 mw Rectifier Diode 5SDD 11D28 Doc. No. 5SYA1166- Okt. 3 Very low on-state losses Optimum power handling capability
More information5STF 28H2060. Fast Thyristor. VDRM, VRRM = V High operational capability. ITAV = A Optimized turn-off parameters
5STF 28H26 5STF 28H26 Fas Thyrisor Properies Key Parameers Amplifying gae VDRM, VRRM = 2 V High operaional capabiliy ITAV = 2 667 A Opimized urn-off parameers ITSM = 46.5 ka VTO = 1.198 V Applicaions rt
More information5SDF 08H6005 PRELIMINARY
V RRM = 5500 V (AV)M = 585 A SM = 18 10 3 A V (T0) = 4.5 V r T = 1.3 mw V DClink = 3300 V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Patented free-floating technology Industry standard housing Cosmic
More informationPhase Control Thyristor Types N3165HA260 and N3165HA280 Development Type No.: NX450HA260 and NX450HA280
Date:- 8 th December, 214 Data Sheet Issue:- A1 Phase Control Thyristor Types N3165HA26 and N3165HA28 Development Type No.: NX45HA26 and NX45HA28 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms,
V RSM = 5500 V Rectifier Diode I (AV)M = 3480 A I (RMS) = 5470 A I SM = 46 10 3 A V 0 = 0.94 V r = 0.147 mw 5SDD 33L5500 Patented free-floating silicon technology Very low on-state losses Optimum power
More informationIXYS. Thyristor/Diode Modules MC#500. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS
Date: 13 th Mar 13 Data Sheet Issue: 1 Absolute Maximum Ratings Thyristor/Diode Modules MC#5 V RRM V DRM [V] 3 5-3io7 5-3io7 5-3io7 5-3io7 36 5-36io7 5-36io7 5-36io7 5-36io7 VOLTAGE RATINGS MAXIMUM LIMITS
More informationIXYS. Thyristor/Diode Modules MC#650. Date: 13 th Mar Data Sheet Issue: 1. Absolute Maximum Ratings V RRM V DRM [V] MAXIMUM LIMITS
Date: 13 th Mar 13 Data Sheet Issue: 1 Absolute Maximum Ratings Thyristor/Diode Modules MC#65 V RRM V DRM [V] 4 65-4io7 65-4io7 65-4io7 65-4io7 VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state
More informationSymmetrical Gate Turn-Off Thyristor Types S0300SR12Y
Date: 21 Feb, 2014 Data Sheet Issue:- 2 Symmetrical Gate Turn-Off Thyristor Types bsolute Maximum Ratings MXIMUM VOLTGE RTINGS LIMITS UNITS V DRM Repetitive peak off-state voltage, (note 1) 1200 V V DSM
More informationPhase Control Thyristor Types N1467NC200 to N1467NC260
Date:- 31 st July 2012 Data Sheet Issue:- 3 Phase Control Thyristor Types N1467NC200 to N1467NC260 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note
More informationPhase Control Thyristor Types N0465WN140 and N0465WN160
Date:- 4 th June, 214 Data Sheet Issue:- 4 Phase Control Thyristor Types N465WN14 and N465WN16 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1)
More informationPhase Control Thyristor Types N2086NC060 to N2086NC100
Date:- August 1 Data Sheet Issue:- 3 Phase Control Thyristor Types N86NC6 to N86NC1 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 6-1 V V DSM
More informationThyristor/Diode Modules M## 500 MCC MCD MDC MCA MCK MCDA MDCA
Date: 19.9.25 Data Sheet Issue: 3 Absolute Maximum Ratings Thyristor/Diode Modules M## 5 V RRM V DRM [V] MCC MCD MDC MCA MCK MCDA MDCA 2 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 5-2io1 22 5-22io1 5-22io1
More informationPhase Control Thyristor Types N1075LN180
Date:- 3 th April, 15 Data Sheet Issue:- 3 Phase Control Thyristor Types Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 18 V V DSM Non-repetitive
More informationPhase Control Thyristor Types N1588NC200 to N1588NC260
Date:- 2 August 212 Data Sheet Issue:- 2 Phase Control Thyristor Types N1588NC2 to N1588NC26 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 2-26
More informationPhase Control Thyristor Types N3533Z#140 to N3533Z#220 Old Type No.: N1400CH02-20
WESTCODE An IXYS Company Date:- 18 Sept 27 Data Sheet Issue:- 2 Phase Control Thyristor Types N3533Z#14 to N3533Z#22 Old Type No.: N14CH2-2 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM
More informationPhase Control Thyristor Types N4085ZC080 to N4085ZC120 Old Type No.: N1600CH02-12
Date:- 3 Jan, 23 Data Sheet Issue:- 1 Phase Control Thyristor Types N485ZC8 to N485ZC12 Old Type No.: N16CH2-12 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage,
More informationST303C..L SERIES 515A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25186 rev. A 05/94. case style TO-200AC (B-PUK)
ST303C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
More informationMTC-500, MTK-500, MTA-500 Dual SCR Power Module
KKMTx5, December29 version MTC-5, MTK-5, MTA-5 s are designed for use in power electronic circuits and equipment under normal operating conditions. KEY PARAMETERS U DRM, U RRM I T(AV) I TSM du/dt* di/dt
More informationST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK)
ST0C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-0AC (B-PUK) 910A Typical Applications DC motor
More informationFast Symmetrical Gate Turn-Off Thyristor Type H0700KC14# to H0700KC17#
Date:- 28 September, 22 Data Sheet Issue:- 2 Fast Symmetrical Gate Turn-Off Thyristor Type H7KC4# to H7KC7# Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS LIMITS UNITS V DRM Repetitive peak off-state
More informationThyristor/Diode Modules M## 700 MCC MCD MDC MCA MCK MCDA MDCA
Date: 27.1.25 Data Sheet Issue: 2 Absolute Maximum Ratings Thyristor/Diode Modules M## 7 V RRM V DRM [V] MCC MCD MDC MCA MCK MCDA MDCA 12 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W 7-12io1W
More informationP100 SERIES 25A PASSIVATED ASSEMBLED CIRCUIT ELEMENTS. Features. Description. Major Ratings and Characteristics. Bulletin I27125 rev.
P0 SERIES PASSIVATED ASSEMBLED CIRCUIT ELEMENTS Features Glass passivated junctions for greater reliability Electrically isolated base plate 25A Available up to 200 V RRM, V DRM High dynamic characteristics
More information1000PT Series. Phase Control Thyristors (Hockey PUK Version), 1000A FEATURES TYPICAL APPLICATIONS. RoHS. Nell High Power Products.
0PT Series Phase Control Thyristors (Hockey PUK ersion), 0 FETURES Center amplifying gate Metal case with ceramic insulator lnternational standard case TO-0C (B-PUK) Nell s C-type Capsule Compliant to
More informationFeatures / Advantages: Applications: Package: Y4
hyristor Module RRM = 2x 4 A = 26A =. Phase leg Part number MCC2-4io Backside: isolated 3 2 6 7 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency Planar passivated chip Long-term
More informationST733C..L SERIES 940A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25188 rev. A 04/00. case style TO-200AC (B-PUK)
ST733C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
More informationThyristor Modules Thyristor/Diode Modules
MCC MCD Thyristor Modules Thyristor/Diode Modules I TRMS = x 5 I TM = x RRM = -8 RSM RRM Type DSM DRM MCC -io MCD -io 5 4 MCC -4io MCD -4io 7 6 MCC -6io MCD -6io 9 8 MCC -8io MCD -8io 7 6 5 4 E787 Symbol
More informationST183C..C SERIES 370A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25178 rev. B 04/00. case style TO-200AB (A-PUK)
ST83C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AB (A-PUK) All diffused design Center amplifying gate Guaranteed high
More informationBlocking Maximum rated values 1) Parameter Symbol Conditions 5SDF 28L4520 Unit Repetitive peak reverse voltage
VRRM = 4500 V ast Recovery Diode I(AV)M = 2620 A ISM = 56 10 3 A V0 = 1.10 V r = 0.47 mω VDC-Link = 2800 V 5SD 28L4520 Doc. No. 5SYA1185-03 Jan. 17 Industry standard housing Cosmic radiation withstand
More informationThyristor Modules Thyristor/Diode Modules
Thyristor Modules Thyristor/Diode Modules I TRMS = 2x 8 I TVM = 2x 6 RM = 8-8 V SM RM Type V DSM V DRM V V Version B 8B Version B 8B 9 8 MCC 95-8 iob / io8b -8 iob / io8b 3 MCC 95-2 iob / io8b -2 iob /
More informationST223C..C SERIES 390A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25174 rev. B 04/00. case style TO-200AB (A-PUK)
ST223C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-0AB (A-PUK) All diffused design Center amplifying gate Guaranteed
More informationST333C..L SERIES 620A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25187 rev. B 04/00. case style TO-200AC (B-PUK)
ST333C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
More information3 1/4. Features / Advantages: Applications: Package: SOT-227B (minibloc)
MCO5-6io hyristor RRM = 6 A = 57A =. Single hyristor Part number MCO5-6io Backside: isolated 3 /4 Features / Advantages: Applications: Package: SO-7B (minibloc) hyristor for line frequency Planar passivated
More informationPhase Control Thyristor Types N2500VC120 to N2500VC160
WESTCODE Date:- 2 Nov, 21 Data Sheet Issue:- 1 Phase Control Thyristor Types N25VC12 to N25VC16 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VDRM Repetitive peak off-state voltage, (note 1)
More informationST303C..C SERIES 620A INVERTER GRADE THYRISTORS. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25172 rev.
ST303C..C SERIES INVERTER GRADE THYRISTORS Puk Version Features Metal case with ceramic insulator International standard case TO-AB (E-PUK) All diffused design Center amplifying gate Guaranteed high dv/dt
More informationFeatures / Advantages: Applications: Package: Y4
hyristor Module RRM = 2x 16 A = 181A = 1.3 Phase leg Part number MCC162-16io1 Backside: isolated 3 1 2 6 7 5 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency Planar passivated
More information1 3/4 2. Features / Advantages: Applications: Package: SimBus A
hyristor Module RRM 2x 6.3 Phase leg Part number Backside: isolated 3/4 2 8 7 6 Features / dvantages: pplications: Package: SimBus hyristor for line frequency Planar passivated chip Long-term stability
More informationPhase Control Thyristor Types N1114LS120 to N1114LS180
WESTCODE Date:- 6 Feb, 1 Data Sheet Issue:- 1 Phase Control Thyristor Types N1114LS1 to N1114LS18 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VDRM Repetitive peak off-state voltage, (note 1)
More informationHFB20HJ20C. Ultrafast, Soft Recovery Diode. Features. Description. Absolute Maximum Ratings. 1 PD A V R = 200V I F(AV) = 20A
PD - 9469A HEXFRED TM Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount Ultrafast, Soft Recovery Diode V R = 200V I F(AV) = 20A t rr
More informationSTARPOWER. Rectifier TD180PBS160C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
STARPOWER SEMICONDUCTOR Rectifier TD180PBS160C5S 1600/180A in one-package General Description STARPOWER Rectifier Power Module provides ultra low conduction loss.they are designed for the applications
More informationRectifier Diode Types W3270N#200 and W3270N#220 Old Type No.: SW20-22CXC14C
Date:- 23 October, 213 Data Sheet Issue:- 6 Rectifier Diode Types W327N#2 and W327N#22 Old Type No.: SW2-22CXC14C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse voltage,
More informationPassivated ultra sensitive gate thyristor in a SOT54 plastic package. Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)
Rev. 2 31 July 28 Product data sheet 1. Product profile 1.1 General description Passivated ultra sensitive gate thyristor in a SOT54 plastic package. 1.2 Features Ultra sensitive gate Direct interfacing
More informationFeatures / Advantages: Applications: Package: TO-240AA
MCC6-ioB hyristor Module = x M = 6 A A =. Phase leg Part number MCC6-ioB Backside: isolated 3 6 7 Features / Advantages: Applications: Package: O-AA hyristor for line frequency Planar passivated chip Long-term
More informationStandard Rectifier Module
Standard ectifier Module M = 2x 12 I FA = 12A = 1.13 F Phase leg Part number MDD95-12N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-24AA Package with B ceramic Improved temperature
More informationStandard Rectifier Module
Standard ectifier Module M = 2x 16 I FA = 71A = 1.14 F Phase leg Part number MDD56-16N1B Backside: isolated 2 1 3 Features / Advantages: Applications: Package: TO-24AA Package with B ceramic Improved temperature
More informationSensitive SCRs. ( Amps) Features. Electrically Isolated Packages. Glass Passivation
Selected Packages* U.L. RECOGNIZED File #E71639 TO - 92 THERMOTAB TO-2AB TO-2AB A K G Sensitive SCRs (.8 1 ) 5 General Description The Teccor Electronics, Inc. line of sensitive SCR semiconductors are
More informationHigh Voltage Thyristor \ Diode Module
High oltage hyristor \ Diode Module = 2x2 M I = 165 A A = 1.8 Phase leg Part number MCD161-2io1 Backside: isolated 3 1 2 5 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6 12 13 E72873
More informationDual Diode Water Cooled Modules MD# 950
Date: 23.5.25 Data Sheet Issue: 2 Dual Diode Water Cooled Modules MD# 95 Absolute Maximum Ratings V RRM V DRM [V] MDD MDA MDK 12 95-12N1W 95-12N1W 95-12N1W 14 95-14N1W 95-14N1W 95-14N1W 16 95-16N1W 95-16N1W
More information30ETH06 30ETH06S 30ETH06-1
Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Dual Diode Center Tap 30ETH06 30ETH06S 30ETH06- t rr = 8ns typ.
More information8ETU04 8ETU04S 8ETU04-1
8ETU04 8ETU04S 8ETU04- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 60ns I F(AV) = 8Amp V R = 400V Description/
More informationThyristor \ Diode Module
hyristor \ Diode Module = 2x16 M I = 181 A A = 1.3 Phase leg Part number MCD162-16io1 Backside: isolated 3 1 2 5 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency Planar passivated
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5-17 T8 Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology 21 22 NTC 8 D11 D13 D15 7 D7 16 15 T1 T3 T5 D1 D3 D5 18 2 17 19 1 2 3 6 5 4 9 D12 D14 D16 14 T7 11 T2 T4 T6 D2 D4 D6
More informationStandard Rectifier Module
Standard ectifier Module = 2x16 M I = 31 A FA F = 1.3 Phase leg Part number MDD312-16N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 Package with B ceramic Improved temperature
More informationFeatures / Advantages: Applications: Package: Y4
hyristor Module = 2x18 M I = 13 A A = 1.8 Phase leg Part number MCC132-18io1 Backside: isolated 3 1 2 6 7 5 4 Features / Advantages: Applications: Package: Y4 hyristor for line frequency Planar passivated
More informationFeatures / Advantages: Applications: Package: TO-240AA
MCC19-8io1B hyristor Module = 2x 8 M I = 18 = 1.7 Phase leg Part number MCC19-8io1B Backside: isolated 3 1 2 6 7 Features / dvantages: pplications: Package: O-2 hyristor for line frequency Planar passivated
More information10 23, 24 21, 22 19, , 14
MWI -T7T Six-Pack Trench IGBT = S = (sat) typ. = 1.7 Part name (Marking on product) MWI -T7T, 1, 1 1 9 17 NTC 1 3, 1, 19, E773 1 3 7 11 Pin configuration see outlines. 7, 13, 1 Features: Trench IGBT technology
More informationWESTCODE. Rectifier Diode Types W1856NC400 to W1856NC500 Old Type No: SW40-50CXC815. An IXYS Company. Date:- 21 Dec, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 21 Dec, 24 Data Sheet Issue:- 1 Rectifier Diode Types W1856NC4 to W1856NC5 Old Type No: SW4-5CXC815 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive
More informationRectifier Diode Types W0507YH360 to W0507YH450 Previous Type No.: SW36-45HXC270
Date:- 6 th March, 214 Data Sheet Issue:- 3 Rectifier Diode Types W57YH36 to W57YH45 Previous Type No.: SW36-45HXC27 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse
More informationConverter - Brake - Inverter Module (CBI3) with Trench IGBT technology
MUBW 5- T Converter - Brake - Inverter Module (CBI3) with Trench IGBT technology NTC D D3 D5 7 D7 5 T T3 T5 D D3 D5 7 9 3 5 9 D D D T7 T T T D D D 3 3 Three Phase Rectifier Brake Chopper Three Phase Inverter
More informationHFB16HY20CC. Ultrafast, Soft Recovery Diode FRED. 1 PD B V R = 200V I F(AV) = 16A. t rr = 30ns CASE STYLE TO-257AA
PD - 94223B HFB6HY20CC FRED Ultrafast, Soft Recovery Diode Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets V R = 200V I F(AV) =
More informationFeatures / Advantages: Applications: Package: TO-240AA
hyristor Module = 2x6 M I = 6 A A =.28 Phase leg Part number MCC95-6ioB Backside: isolated 3 2 6 7 5 4 Features / Advantages: Applications: Package: O-24AA hyristor for line frequency Planar passivated
More informationMUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline
Ultrafast Rectifier MUR300WT Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature BASE COMMON CATHODE 3 ANODE COMMON ANODE CATHODE t rr = 35ns
More informationWESTCODE. Rectifier Diode Types W2820V#360 to W2820V#450 Old Type No.: SW36-45C/FXC1100. An IXYS Company. Date:- 9 Jul, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 9 Jul, 24 Data Sheet Issue:- 1 Rectifier Diode Types W282V#36 to W282V#45 Old Type No.: SW36-45C/FXC11 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive
More informationWESTCODE. An IXYS Company. Date:- 16 Jun, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 16 Jun, 26 Data Sheet Issue:- 1 Provisional Data Rectifier Diode Type W428##25 to W428##32 Development Type No.: WX171##25-32 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM
More informationStandard Rectifier Module
Standard ectifier Module = 16 M I = 56 A FA F =.98 Single Diode Part number MDO5-16N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 Planar passivated chips ery low leakage current
More informationFeatures / Advantages: Applications: Package: SOT-227B (minibloc)
M = =,9 C Controlling ~ full-controlled Part number Backside: isolated 3 Features / dvantages: pplications: Package: SO-7B (minibloc) for line frequency Planar passivated chip Long-term stability Line
More informationBTA/BTB24, BTA25, BTA26 and T25 Series
BTA/BTB24, BT5, BT6 and T25 Series SNUBBERLESS & STANDARD 25A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 25 A V DRM /V RRM 6 and 8 V I T (Q1 ) 35 to 5 ma DESCRIPTION Available either in through-hole
More informationWESTCODE. An IXYS Company. Date:- 10 Oct, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 1 Oct, 26 Data Sheet Issue:- 1 Provisional Data Wespack Rectifier Diode Types W5334MK2-W5334MK22 Previous Type No.: W4987MK2-22 Absolute Maximum Ratings VOLTAGE RATINGS
More informationHigh Voltage Standard Rectifier Module
MDO5-22N1 High oltage Standard ectifier Module = 22 M I = 56 A FA F =.98 Single Diode Part number MDO5-22N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 Planar passivated chips
More informationWESTCODE. Rectifier Diode Types W1520N#500 to W1520N#600 Old Part No.: SW46-58CXC620. An IXYS Company. Date:- 5 Apr, Data Sheet Issue:- 2
WESTCODE An IXYS Company Date:- 5 Apr, 26 Data Sheet Issue:- 2 Rectifier Diode Types W152N#5 to W152N#6 Old Part No.: SW46-58CXC62 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive
More information15ETL06PbF 15ETL06FPPbF
Ultra-low V F Hyperfast Rectifier for Discontinuous Mode PFC Features Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 75 C Operating Junction Temperature Fully Isolated
More informationConverter - Brake - Inverter Module (CBI 1) Trench IGBT
Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32
More informationFeatures / Advantages: Applications: Package: SOT-227B (minibloc)
IX7R1N XPT CS 1 I C5 1 1.8 C(sat) Boost Chopper Part number IX7R1N Backside: isolated 3 1 Features / dvantages: pplications: Package: SOT-7B (minibloc) asy paralleling due to the positive temperature coefficient
More information250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 9634 IRG6B33UDPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM
More information1200 V 600 A IGBT Module
1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and
More informationMURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline
MURD60CT Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 5ns I F(AV) = 6Amp V R = 00V Description/ Applications
More informationMUR1620CT MURB1620CT MURB1620CT-1
Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature MUR60CT MURB60CT MURB60CT- t rr = 5ns I F(AV) = 6Amp V R = 00V Description/
More information50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.
"LOW SIDE CHOPPER" IGBT MTP Ultrafast Speed IGBT Features Gen. 4 Ultrafast Speed IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses Optional SMT Thermistor
More informationBTA12, BTB12 and T12 Series
BTA12, BTB12 and T12 Series SNUBBERLESS, LOIC LEVEL & STANDARD 12A TRIACS Table 1: Main Features Symbol Value Unit I T(RMS) 12 A V DRM /V RRM 6 and 8 V I T (Q1 ) 5 to 5 ma A1 DESCRIPTION Available either
More information