Blocking Maximum rated values 1) Parameter Symbol Conditions 5SDF 28L4520 Unit Repetitive peak reverse voltage
|
|
|
- Kerry Lawrence
- 5 years ago
- Views:
Transcription
1 VRRM = 4500 V ast Recovery Diode I(AV)M = 2620 A ISM = A V0 = 1.10 V r = 0.47 mω VDC-Link = 2800 V 5SD 28L4520 Doc. No. 5SYA Jan. 17 Industry standard housing Cosmic radiation withstand rating Optimized low on-state Optimized for snubberless operation High RBSOA upto high di/dt Blocking Parameter Symbol Conditions 5SD 28L4520 Unit Repetitive peak reverse voltage Permanent DC voltage for 100 IT failure rate VRRM f = 50 Hz, tp = 10 ms, = 140 C 4500 V VDC-link Ambient cosmic radiation at sea level in open air. 100% Duty % Duty 3200 Reverse leakage current IRRM VRRM, = 140 C 120 ma Mechanical data Mounting force M kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 200 m/s 2 Weight m 1.45 kg Housing thickness H M = 40 kn, Ta = 25 C mm Surface creepage distance DS 33 mm Air strike distance Da 14 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur V
2 On-state Average on-state current I(AV)M Half sine wave, Tc = 70 C 2620 A RMS on-state current I(RMS) 4120 A Peak non-repetitive surge tp = 10 ms, = 140 C, ISM current 3 A sine half wave, Limiting load integral I 2 t VR = 0 V, after surge A 2 s On-state voltage V I = 3300 A, = 140 C V Threshold voltage V V , = 140 C Slope resistance r 0.47 m Turn-on Peak forward recovery voltage VRM di/dt = 3000 A/µs, IM = 5500 A, = 140 C 190 V Turn-off Max. decay rate of on-state current di/dtcrit IM = 5500 A, = 140 C, VDC-Link = 2800 V 1000 A/µs Reverse recovery charge Qrr IQ = 3300 A, VDC-Link = 2800 V, µas -di/dt = 1000 A/µs, LCL Reverse recovery current = 300 nh, IRM A CCL = 20 µ, RCL = 0.3, Turn-off energy Err DCL = 5SD 10H4503, = 140 C J Doc. No. 5SYA Jan. 17 page 2 of 7
3 Thermal Operating junction temperature range C Storage temperature range Tstg C Thermal resistance junction to case Thermal resistance case to heatsink Rth(j-c) Rth(j-c)A Rth(j-c)C Rth(c-h) Rth(c-h) Double-side cooled m = kn Anode-side cooled m = kn Cathode-side cooled m = kn Double-side cooled m = kn Single-side cooled m = kn 6 K/kW 11.2 K/kW 12.9 K/kW 3 K/kW 6 K/kW Analytical function for transient thermal impedance: Z th(j-c) = n i1 R (1- e i -t/ i Ri(K/kW) i(s) i ) ig. 1 Transient thermal impedance (junction-tocase) vs. time Doc. No. 5SYA Jan. 17 page 3 of 7
4 V25 Max. on-state characteristic model: A B I C ln( I 1) D Valid for I = A I V140 Max. on-state characteristic model: A B I C ln( I 1) D Valid for I = A I A 25 B 25 C 25 D 25 A 140 B 140 C 140 D ig. 2 On-state voltage characteristics ig. 3 On-state voltage characteristics ig. 4 Upper scatter range of turn-off energy per pulse vs. turn-off current ig. 5 Upper scatter range of turn-off energy per pulse vs reverse current rise rate Doc. No. 5SYA Jan. 17 page 4 of 7
5 ig. 6 Upper scatter range of repetitive reverse recovery charge vs reverse current rise rate. ig. 7 Upper scatter range of reverse recovery current vs reverse current rise rate ig. 8 Diode Safe Operating Area Doc. No. 5SYA Jan. 17 page 5 of 7
6 V, I V R di /dt I -di /dt I V V Q rr t fr tfr (typ) 10 µs I RM V R t ig. 9 General current and voltage waveforms L i L CL R S D CL I V LC C CL DUT L Load ig. 10 Test circuit. Doc. No. 5SYA Jan. 17 page 6 of 7
7 ig. 11 Device Outline Drawing Related documents: Doc. Nr. Title 5SYA SYA SZK SZK SZK SZK 9116 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Applying ast Recovery Diodes Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION Specification of environmental class for presspack Diodes, PCTs and GTOs, OPERATION (Industry) Specification of environmental class for presspack Diodes, PCTs and GTOs, OPERATION (Traction) Please refer to for current version of documents. ABB Switzerland Ltd Doc. No. 5SYA Jan. 17 Semiconductors abrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0) ax +41 (0) abbsem@ch.abb.com Internet
5SDF 08H6005 PRELIMINARY
V RRM = 5500 V (AV)M = 585 A SM = 18 10 3 A V (T0) = 4.5 V r T = 1.3 mw V DClink = 3300 V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Patented free-floating technology Industry standard housing Cosmic
Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 50 Hz, t p = 10 ms, T vj = C f = 5 Hz, t p = 10 ms,
V RSM = 5500 V Rectifier Diode I (AV)M = 3480 A I (RMS) = 5470 A I SM = 46 10 3 A V 0 = 0.94 V r = 0.147 mw 5SDD 33L5500 Patented free-floating silicon technology Very low on-state losses Optimum power
Rectifier Diode 5SDD 11D2800
V RSM = 3 V I F(AV)M = 1285 A I F(RMS) = 219 A I FSM = 15 1 3 A V F =.933 V r F =.242 mw Rectifier Diode 5SDD 11D28 Doc. No. 5SYA1166- Okt. 3 Very low on-state losses Optimum power handling capability
ABB 5STP12F4200 Control Thyristor datasheet
ABB 5STP12F4200 Control Thyristor datasheet http://www.manuallib.com/abb/5stp12f4200-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed
Asymmetric Gate turn-off Thyristor 5SGA 15F2502
V DRM = 2500 V I GQM = 1500 A I SM = 10 10 3 A V 0 = 1.45 V r = 0.90 mw V Dclink = 1400 V Asymmetric Gate turn-off hyristor 5SGA 15F2502 Patented free-floating silicon technology Low on-state and switching
Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY
V DRM = 4500 V I TGQM = 600 A I TSM = 3 10 3 A V T0 = 1.9 V r T = 3.5 mω V Dclink = 2800 V Asymmetric Gate turn-off Thyristor 5SGA 06D4502 PRELIMINARY Patented free-floating silicon technology Low on-state
Asymmetric Gate turn-off Thyristor 5SGA 30J4502
V DRM = 45 V I TGQM = 3 A I TSM = 24 1 3 A V T = 2.2 V r T =.6 mω V Dclink = 28 V Asymmetric Gate turn-off Thyristor 5SGA 3J452 Patented free-floating silicon technology Low on-state and switching losses
5SGA 15F2502. Gate turn-off Thyristor. V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V
V DRM = 2500 V I TGQM = 1500 A I TSM = 10 ka V T0 = 1.55 V r T = 0.63 mω V DClin = 1400 V Gate turn-off Thyristor 5SGA 15F2502 Doc. No. 5SYA 1214-01 Aug. 2000 Patented free-floating silicon technology
5SGF 30J4502. Gate turn-off Thyristor PRELIMINARY. V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V
V DRM = 4500 V I TGQM = 3000 A I TSM = 24 ka V T0 = 1.80 V r T = 0.70 mω V DClin = 3000 V Gate turn-off Thyristor 5SGF 30J4502 PRELIMINARY Doc. No. 5SYA 1211-04 Aug. 2000 Patented free-floating silicon
5SDF 13H4505. Fast Recovery Diode. Properties. Key Parameters. VRRM = V Enhanced Safe Operating Area. IFAVm = A Industry standard housing
5SDF 13H455 5SDF 13H455 Fast Recovery Diode Properties Key Parameters Optimized soft recovery characteristics VRRM = 4 5 V Enhanced Safe Operating Area IFAVm = 1 393 A Industry standard housing IFSM =
5SGA 20H2501. Gate turn-off Thyristor. V DRM = I TGQM = 2000 A I TSM = 16 ka V T0 = 1.66 V r T = 0.57 mω V DClin = 1400 V
V DRM = 25 V I TGQM = 2 A I TSM = 16 ka V T = 1.66 V r T =.57 mω V DClin = 14 V Gate turn-off Thyristor Doc. No. 5SYA125-1 Jun. 4 Patented free-floating silicon technology Low on-state and switching losses
5SNG 1000X PRELIMINARY LinPak phase leg IGBT module
Data Sheet, Doc. No. 5SYA 1449- Aug 16 5SNG 1X173 PRELIMINARY LinPak phase leg IGBT module VCE = 17 V IC = 2 x 1 A Ultra low inductance phase-leg module Compact design with very high current density Paralleling
ABB HiPak. IGBT Module 5SNA 0800N VCE = 3300 V IC = 800 A
VCE = 33 V IC = 8 A ABB HiPak IGBT Module 5SNA 8N331 Doc. No. 5SYA 1591-2 4-214 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
5SDF 06D2504 Old part no. DM
Fast Recovery Diode Properties 5SDF 6D254 Old part no. DM 827-62-25 Key Parameters Optimized recovery characteristics V RRM = 2 5 V Industry standard housing I FAVm = 615 A I FSM = 1 A Applications V TO
5SNA 2400E HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 1417-4 2-214 5SNA 24E1735 HiPak IGBT Module VCE = 17 V IC = 24 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power
5SNA 1500E HiPak IGBT Module
Data Sheet, Doc. No. 5SYA 47-7 2-24 5SNA 5E3335 HiPak IGBT Module VCE = 33 V IC = 5 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling
ABB HiPak. IGBT Module 5SNA 1600N VCE = 1700 V IC = 1600 A
VCE = 17 V IC = 16 A ABB HiPak IGBT Module 5SNA 16N171 Doc. No. 5SYA1564-2 Apr 14 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
5SNA 1300K StakPak IGBT Module
Data Sheet, Doc. No. 5SYA 1432-1 1-216 5SNA 13K453 StakPak IGBT Module VCE = 45 V IC = 13 A Fails into stable shorted state Low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High
ABB HiPak. IGBT Module 5SNE 0800M VCE = 1700 V IC = 800 A
VCE = 17 V IC = 8 A ABB HiPak IGBT Module 5SNE 8M171 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power
Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L4503
V DRM = 45 V I TGQM = 4 A I TSM = 32 ka V T =.4 V r T =.325 mω V DClink = 28 V Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L453 Highest snubberless turn-off rating Suitable for series connection
5SNG 0150Q Pak phase leg IGBT Module
Data Sheet, Doc. No. 5SYA 1447-216-9 5SNG 15Q173 62Pak phase leg IGBT Module VCE = 17 V IC = 15 A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low
5SNE 1000E HiPak Chopper IGBT Module
Data Sheet, Doc. No. 5SYA 457-8-27 5SNE E333 HiPak Chopper IGBT Module VCE = 33 V IC = A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power
ABB HiPak. IGBT Module 5SNE 0800G VCE = 4500 V IC = 800 A
VCE = 45 V IC = 8 A ABB HiPak IGBT Module 5SNE 8G453 Ultra low-loss, rugged SPT + chip-set Smooth switching SPT + chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high
5SNG 0200Q Pak phase leg IGBT Module
Data Sheet, Doc. No. 5SYA 1448-216-9 5SNG Q17 62Pak phase leg IGBT Module VCE = 17 V IC = A Ultra low-loss, rugged SPT++ chip-set Smooth switching SPT++ chip-set for good EMC Cu base-plate for low thermal
ABB HiPak TM. IGBT Module 5SNA 0800N V CE = 3300 V I C = 800 A
V CE = 33 V I C = 8 A ABB HiPak TM IGBT Module 5SNA 8N33 Doc. No. 5SYA 59- Jan 7 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
5SDF 0131Z0401. High Frequency Housingless Welding Diode. I FAVm = A I FSM = A V TO = V Applications r T = m.
5SDF 131Z41 5SDF 131Z41 High Frequency Housingless Welding Diode Properties Key Parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 13 58 A I FSM = 7
5SNA 2000K StakPak IGBT Module
Data Sheet, Doc. No. 5SYA 143-1-213 5SNA K4513 StakPak IGBT Module = 45 V = A Low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC High tolerance to uneven mounting pressure Explosion
ABB HiPak TM. IGBT Module 5SNA 1200E V CE = 2500 V I C = 1200 A
V CE = 25 V I C = 2 A ABB HiPak TM IGBT Module 5SNA 2E25 Doc. No. 5SYA 557-2 July 4 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC
5SNA 1000G HiPak IGBT module
Datasheet 5SYA 1465-02, Nov. 2018 5SNA 1000G650300 HiPak IGBT module VCE = 6500 V IC = 1000 A Ultra-low-loss, rugged SPT ++ chip-set Exceptional ruggedness and highest current rating High insulation package
5SDD 36K5000 Old part no. DV 889B
Rectifier Diode Old part no. DV 889B-36-5 Properties Key Parameters Industry standard housing V RRM = 5 V Suitable for parallel operation I FAVm = 3 638 A High operating temperature I FSM = 45 A Low forward
5SDD 0120C0400 Old part no. DS 879D
Old part no. DS 879D-12-4 Welding diode Properties Key parameters High forward current capability V RRM = 4 V Low forward and reverse recovery losses I FAVm = 11 3 A High operational reliability I FSM
5SDD 71B0400 Old part no. DS 808D
Old part no. DS 88D-71-4 Welding diode Properties Key parameters High forward current capability VRRM = 4 V Low forward and reverse recovery losses IFAVm = 7 1 A High operational reliability IFSM = A VTO
5STP 18F1801 Old part no. T
5STP 18F181 Phase Control Thyristor Properties 5STP 18F181 Old part no. T 918-177-18 Key Parameters High operational capability V DRM, V RRM = 1 8 V Possibility of serial and parallel connection I TAVm
Phase Control Thyristor Types N2500VC120 to N2500VC160
WESTCODE Date:- 2 Nov, 21 Data Sheet Issue:- 1 Phase Control Thyristor Types N25VC12 to N25VC16 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VDRM Repetitive peak off-state voltage, (note 1)
Rectifier Diode Types W3708MC300 to W3708MC350
Date:- 18 th May 2017 Data Sheet Issue:- 2 Rectifier Diode Types W3708MC300 to W3708MC350 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VRRM Repetitive peak reverse voltage, (note 1) 3000-3500
5SGS 08D4500 Old part no. TG
Old part no. TG 97-8-45 Gate Turn-off Thyristor Properties Key Parameters Full reverse voltage V DRM, V RRM = 4 5 V High reliability I TGQM = 8 A Suitable for drives and traction applications I TAVm =
Phase Control Thyristor Type SKT552/16E
Date:- 4 Feb 22 Data Sheet Issue:- 3 Absolute Maximum Ratings Phase Control Thyristor Type VOLTAGE RATINGS Symbol Parameter MAXIMUM UNITS V DRM Repetitive peak off-state voltage, (note 1) 16 V V DSM Non-repetitive
ST2600C..R SERIES 2630A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25199 rev. B 02/00 (R-PUK)
ST2600C..R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Double side cooling High surge capability High mean current Fatigue free 2630A Typical Applications DC motor controls Controlled DC
Max Q1. Symbol V GS I DM 15 I DSM 7.8 I AS E AS V SPIKE P D 2.5 P DSM. Junction and Storage Temperature Range T J, T STG
3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low RDS(on) at 4.V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant
ST1230C..K SERIES 1745A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25194 rev. B 01/00. case style A-24 (K-PUK)
ST1230C..K SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case A-24 (K-PUK) High profile hockey-puk 1745A Typical
< HIGH VOLTAGE DIODE MODULES > RM400DG-90F. APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
I F 4A V RRM 45V 2-element in a Pack High insulated Type Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT
Phase Control Thyristor Types N1467NC200 to N1467NC260
Date:- 31 st July 2012 Data Sheet Issue:- 3 Phase Control Thyristor Types N1467NC200 to N1467NC260 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note
STTH10R04. High efficiency rectifier. Description. Features
STTH1R4 High efficiency rectifier Datasheet - production data Features K A A NC D 2 PAK K Ultrafast recovery Low power losses High surge capability Low leakage current High junction temperature ECOPACK
CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
M6HG-1H rd-ersion M6HG-1H I...6 A S... 6 High Insulated Type 1-element in a Pack AISi Baseplate APPLIATION Traction drives, High Reliability onverters / Inverters, D choppers OUTLIN DRAWING & IRUIT DIAGRAM
WESTCODE. An IXYS Company. Date:- 10 Oct, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 1 Oct, 26 Data Sheet Issue:- 1 Provisional Data Wespack Rectifier Diode Types W5334MK2-W5334MK22 Previous Type No.: W4987MK2-22 Absolute Maximum Ratings VOLTAGE RATINGS
PHP7NQ60E; PHX7NQ60E
Rev. 1 2 August 22 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ6E in TO-22AB (SOT78) PHX7NQ6E in isolated TO-22AB. 2. Features Very
500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
30ETH06 30ETH06S 30ETH06-1
Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Dual Diode Center Tap 30ETH06 30ETH06S 30ETH06- t rr = 8ns typ.
DATA SHEET. BYV2100 Fast soft-recovery controlled avalanche rectifier DISCRETE SEMICONDUCTORS. Product specification 1996 Oct 07. handbook, 2 columns
DISCRETE SEMICONDUCTORS DATA SHEET handbook, columns M3D6 BYV 996 Oct 7 BYV FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy
Phase Control Thyristor Types N2086NC060 to N2086NC100
Date:- August 1 Data Sheet Issue:- 3 Phase Control Thyristor Types N86NC6 to N86NC1 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 6-1 V V DSM
Phase Control Thyristor Types N1114LS120 to N1114LS180
WESTCODE Date:- 6 Feb, 1 Data Sheet Issue:- 1 Phase Control Thyristor Types N1114LS1 to N1114LS18 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VDRM Repetitive peak off-state voltage, (note 1)
CM400DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM400DY-24A. IC...400A VCES V Insulated Type 2-elements in a pack
CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 9±0. G 80 6±0. CE E C G E
DATA SHEET. BYD31 series Fast soft-recovery controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 18
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D Supersedes data of 996 Jun 5 File under Discrete Semiconductors, SC 996 Sep 8 FEATURES Glass passivated High maximum operating temperature Low leakage
Phase Control Thyristor Types N4085ZC080 to N4085ZC120 Old Type No.: N1600CH02-12
Date:- 3 Jan, 23 Data Sheet Issue:- 1 Phase Control Thyristor Types N485ZC8 to N485ZC12 Old Type No.: N16CH2-12 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage,
Dual Diode Water Cooled Modules MD# 950
Date: 23.5.25 Data Sheet Issue: 2 Dual Diode Water Cooled Modules MD# 95 Absolute Maximum Ratings V RRM V DRM [V] MDD MDA MDK 12 95-12N1W 95-12N1W 95-12N1W 14 95-14N1W 95-14N1W 95-14N1W 16 95-16N1W 95-16N1W
Rectifier Diode Types W3270N#200 and W3270N#220 Old Type No.: SW20-22CXC14C
Date:- 23 October, 213 Data Sheet Issue:- 6 Rectifier Diode Types W327N#2 and W327N#22 Old Type No.: SW2-22CXC14C Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse voltage,
Phase Control Thyristor Types N3165HA260 and N3165HA280 Development Type No.: NX450HA260 and NX450HA280
Date:- 8 th December, 214 Data Sheet Issue:- A1 Phase Control Thyristor Types N3165HA26 and N3165HA28 Development Type No.: NX45HA26 and NX45HA28 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM1000HG-130XA
CMHG-3XA CMHG-3XA I C A V CES 65 V -element in pack High Insulated type CSTBT TM (III) / RFC Diode AlSiC baseplate APPLICATION Traction drives,
Phase Control Thyristor Types N0465WN140 and N0465WN160
Date:- 4 th June, 214 Data Sheet Issue:- 4 Phase Control Thyristor Types N465WN14 and N465WN16 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1)
TSP10N60M / TSF10N60M
TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
DATA SHEET. BYD63 Ripple blocking diode DISCRETE SEMICONDUCTORS Jun 10
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D9 Supersedes data of November 995 File under Discrete Semiconductors, SC 996 Jun FEATURES Glass passivated High maximum operating temperature Low leakage
Phase Control Thyristor Types N3533Z#140 to N3533Z#220 Old Type No.: N1400CH02-20
WESTCODE An IXYS Company Date:- 18 Sept 27 Data Sheet Issue:- 2 Phase Control Thyristor Types N3533Z#14 to N3533Z#22 Old Type No.: N14CH2-2 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM
Standard Rectifier Module
Standard ectifier Module = 2x16 M I = 31 A FA F = 1.3 Phase leg Part number MDD312-16N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 Package with B ceramic Improved temperature
MUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline
Ultrafast Rectifier MUR300WT Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature BASE COMMON CATHODE 3 ANODE COMMON ANODE CATHODE t rr = 35ns
ST303C..L SERIES 515A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25186 rev. A 05/94. case style TO-200AC (B-PUK)
ST303C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-AC (B-PUK) All diffused design Center amplifying gate Guaranteed
C N V (4TYP) U (5TYP)
QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) 92-7272 www.pwrx.com Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M 1
< HVIGBT MODULE > CMH1200DC-34S HIGH POWER SWITCHING USE SiC Hybrid HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Module
< HVIGBT MODULE > I C 2A V CES 7V 2-element in a Pack Insulated Type CSTBT SiC Schottky-Barrier Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE
WESTCODE. Rectifier Diode Types W1520N#500 to W1520N#600 Old Part No.: SW46-58CXC620. An IXYS Company. Date:- 5 Apr, Data Sheet Issue:- 2
WESTCODE An IXYS Company Date:- 5 Apr, 26 Data Sheet Issue:- 2 Rectifier Diode Types W152N#5 to W152N#6 Old Part No.: SW46-58CXC62 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive
WESTCODE. Rectifier Diode Types W1856NC400 to W1856NC500 Old Type No: SW40-50CXC815. An IXYS Company. Date:- 21 Dec, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 21 Dec, 24 Data Sheet Issue:- 1 Rectifier Diode Types W1856NC4 to W1856NC5 Old Type No: SW4-5CXC815 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive
Single Phase Fast Recovery Bridge (Power Modules), 61 A
VS-SA6BA60 Single Phase Fast Recovery Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 600 V I O 6 A t rr 70 ns Type Modules - Bridge, Fast Package SOT-227 Circuit configuration Single
5SMY 12H1280. IGBT-Die V CE = 1200 V I C = 57 A. Die size: 9.1 x 9.1 mm
V CE = 12 V I C = 57 A IGBT-Die 5SMY 12H128 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 132-4 12 14 Ultra low loss thin IGBT die Highly rugged SPT + design Large bondable emitter area Passivation : Silicon Nitride
Dual rugged ultrafast rectifier diode, 20 A, 150 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
Rev. 04 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features and benefits High reverse
Phase Control Thyristor Types N1075LN180
Date:- 3 th April, 15 Data Sheet Issue:- 3 Phase Control Thyristor Types Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 18 V V DSM Non-repetitive
PHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
M3D3 Rev. 1 16 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold
DATA SHEET. BYD77 series Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS May 24
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D Supersedes data of December 99 File under Discrete Semiconductors, SC 996 May 4 FEATURES Glass passivated High maximum operating temperature Low leakage
WESTCODE. Rectifier Diode Types W2820V#360 to W2820V#450 Old Type No.: SW36-45C/FXC1100. An IXYS Company. Date:- 9 Jul, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 9 Jul, 24 Data Sheet Issue:- 1 Rectifier Diode Types W282V#36 to W282V#45 Old Type No.: SW36-45C/FXC11 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive
Rectifier Diode Types W0507YH360 to W0507YH450 Previous Type No.: SW36-45HXC270
Date:- 6 th March, 214 Data Sheet Issue:- 3 Rectifier Diode Types W57YH36 to W57YH45 Previous Type No.: SW36-45HXC27 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse
8ETU04 8ETU04S 8ETU04-1
8ETU04 8ETU04S 8ETU04- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 60ns I F(AV) = 8Amp V R = 400V Description/
PHP/PHB174NQ04LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
Rev. 1 12 May 24 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level
AOD4184A 40V N-Channel MOSFET
4V NChannel MOSFET General Description The AOD484A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is well suited for high current
CM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts
CM1DUC-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 Amperes/17 Volts A P D (8 PLACES) G U H H N S L K C2 C2E1 C1 W X J F BB G2 E2 E1 G1 Y C B Z E CC
Phase Control Thyristor Types N1588NC200 to N1588NC260
Date:- 2 August 212 Data Sheet Issue:- 2 Phase Control Thyristor Types N1588NC2 to N1588NC26 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 2-26
WESTCODE. An IXYS Company. Date:- 16 Jun, Data Sheet Issue:- 1
WESTCODE An IXYS Company Date:- 16 Jun, 26 Data Sheet Issue:- 1 Provisional Data Rectifier Diode Type W428##25 to W428##32 Development Type No.: WX171##25-32 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM
STGWA40HP65FB2. Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long leads package. Datasheet. Features.
Datasheet Trench gate field-stop, 65 V, 4 A, high-speed HB2 series IGBT in a TO-247 long leads package Features Maximum junction temperature : T J = 175 C Low V CE(sat) = 1.55 V(typ.) @ I C = 4 A Co-packaged
2SJ182(L), 2SJ182(S)
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable
V DS. I D (at V GS =-4.5V) -40A R DS(ON) (at V GS =-1.8V) 100% UIS Tested 100% R g Tested. DFN 3x3_EP D
AON747 V PChannel MOSFET General Description The AON747 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch
400V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID. Features. Ordering Information 400V 0.55Ω 10.5A. This Power MOSFET is produced using
400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
15ETL06PbF 15ETL06FPPbF
Ultra-low V F Hyperfast Rectifier for Discontinuous Mode PFC Features Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 75 C Operating Junction Temperature Fully Isolated
AOD466 N-Channel Enhancement Mode Field Effect Transistor
NChannel Enhancement Mode Field Effect Transistor General Description The AOD466 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for
CM300DY-24A. APPLICATION AC drive inverters & Servo controls, etc CM300DY-24A. IC...300A VCES V Insulated Type 2-elements in a pack
CM00DY-A CM00DY-A IC...00A CES... 0 Insulated Type -elements in a pack APPLICATION AC drive inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8 9±0. -M6 NUTS G +1.0 0 0.
IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse
Features / Advantages: Applications: Package: SOT-227B (minibloc)
IX7R1N XPT CS 1 I C5 1 1.8 C(sat) Boost Chopper Part number IX7R1N Backside: isolated 3 1 Features / dvantages: pplications: Package: SOT-7B (minibloc) asy paralleling due to the positive temperature coefficient
2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level
ST700C..L SERIES 910A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25190 rev. D 04/00. case style TO-200AC (B-PUK)
ST0C..L SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-0AC (B-PUK) 910A Typical Applications DC motor
HFB20HJ20C. Ultrafast, Soft Recovery Diode. Features. Description. Absolute Maximum Ratings. 1 PD A V R = 200V I F(AV) = 20A
PD - 9469A HEXFRED TM Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Surface Mount Ultrafast, Soft Recovery Diode V R = 200V I F(AV) = 20A t rr
AON V Common-Drain Dual N-Channel MOSFET
2V CommonDrain Dual NChannel MOSFET General Description Low R DS(ON) With ESD Protection to improve battery performance and safety Common drain configuration for design simplicity RoHS and HalogenFree
250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 9634 IRG6B33UDPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM
PHM21NQ15T. TrenchMOS standard level FET
M3D879 Rev. 2 11 September 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO8)
GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
Converter - Brake - Inverter Module (CBI 1) Trench IGBT
Converter - Brake - Inverter Module (CBI 1) Trench IGBT Preliminary data Three Phase Rectifier Brake Chopper Three Phase Inverter RRM = 16 CES = 12 CES = 12 I DM25 = 151 I C25 = 19 I C25 = 43 I FSM = 32