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1 QID3316 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 1697 (724) Dual IGBT HVIGBT Module 1 Amperes/33 Volts S NUTS (3TYP) F A D F J (2TYP) C N 7 8 H B E M H 4 V (4TYP) G (3TYP) R (DEEP) T (SCREWING DEPTH - 3 TYP) 4 K (3TYP) 2 L (2TYP) U (TYP) Q P Description: Powerex HVIGBTs feature highly insulating housings that offer enhanced protection by means of greater creepage and strike clearance distance for many demanding applications like medium voltage drives and auxiliary traction applications Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A B C D 4.88± ±.2 E 2.24±.1 7.±.2 F G H J Dimensions Inches Millimeters L.69±.1 17.±.2 M N.2. P.22. Q R S M Metric M T.63 Min. 16. Min. U.11 x x. Features: -4 to 1 C Extended Temperature Range 1% Dynamic Tested 1% Partial Discharge Tested Advanced Mitsubishi R-Series Chip Technology Aluminum Nitride (AlN) Ceramic Substrate for Low Thermal Impedance Complementary Line-up in Expanding Current Ranges to Mitsubishi HVIGBT Power Modules Copper Baseplate Creepage and Clearance Meet IEC Rugged SWSOA and RRSOA K V.28 Dia. 7. Dia. Applications: High Voltage Power Supplies Medium Voltage Drives Motor Drives Traction 1
2 QID Amperes/33 Volts Absolute Maximum Ratings, T j = 2 C unless otherwise specified Ratings Symbol QID3316 Units Junction Temperature T j - to +1 C Operating Temperature T op - to +1 C Storage Temperature T stg - to +1 C Collector-Emitter Voltage (V GE = V) V CES 33 Volts Gate-Emitter Voltage (V CE = V) V GES ±2 Volts Collector Current (T C = 12 C) I C 1 Amperes Collector Current (T C = 2 C) I C 18 Amperes Peak Collector Current (Pulse) I CM 2* Amperes Diode Forward Current** (T C = 99 C) I F 1 Amperes Diode Forward Surge Current** (Pulse) I FM 2* Amperes I 2 t for Diode (t = 1ms, V R = V, T j = 12 C) I 2 t 7. ka 2 sec Maximum Collector Dissipation (T C = 2 C, IGBT Part, T j(max) 1 C) P C 14 Watts Mounting Torque, M Terminal Screws 3 in-lb Mounting Torque, M6 Mounting Screws 44 in-lb Module Weight (Typical) 8 Grams Isolation Voltage (Charged Part to Baseplate, AC 6Hz 1 min.) V iso 6. kvolts Partial Discharge Q pd 1 pc (V1 = 3 V RMS, V2 = 26 V RMS, f = 6Hz (Acc. to IEC 1287)) Maximum Short-Circuit Pulse Width, t psc 1 µs (V CC 2V, V CE V CES, V GE = 1V, T j = 12 C) Electrical Characteristics, T j = 2 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES V CE = V CES, V GE = V 1. ma Gate Leakage Current I GES V GE = V GES, V CE = V. µa Gate-Emitter Threshold Voltage V GE(th) I C = 1mA, V CE = 1V Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 1A, V GE = 1V, 2.7*** 3. Volts I C = 1A, V GE = 1V, T j = 12 C Volts I C = 1A, V GE = 1V, T j = 1 C 3.6 Volts Total Gate Charge Q G V CC = 18V, I C = 8A, V GE = 1V.9 µc Emitter-Collector Voltage** V EC I E = 1A, V GE = V, Volts * Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). *** Pulse width and repetition rate should be such that device junction temperature rise is negligible. I E = 1A, V GE = V, T j = 12 C 2.4 Volts I E = 1A, V GE = V, T j = 1 C 2. Volts 2
3 QID Amperes/33 Volts Electrical Characteristics, T j = 2 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies 11. nf Output Capacitance C oes V GE = V, V CE = 1V.7 nf Reverse Transfer Capacitance C res.3 nf Turn-on Delay Time t d(on) V CC = 18V, I C = 1A, 8 ns Rise Time t r V GE = ±1V, 16 ns Turn-off Delay Time t d(off) R G(on) = 3Ω, R G(off) = 1Ω, 32 ns Fall Time t f L S = 1nH, Inductive Load 13 ns Turn-on Switching Energy E on T j = 1 C, I C = 1A, V GE = ±1V, 2 mj/p Turn-off Switching Energy E off R G(on) = 3Ω, R G(off) = 1Ω, 18 mj/p V CC = 18V, L S = 1nH, Inductive Load Diode Reverse Recovery Time** t rr V CC = 18V, I E = 1A, ns Diode Reverse Recovery Charge** Q rr V GE = ±1V, R G(on) = 3Ω, 9* µc Diode Reverse Recovery Energy E rec L S = 1nH, Inductive Load, T j = 1 C 133 mj/p Stray Inductance (C1-E2) L SCE 7 nh Lead Resistance Terminal-Chip R CE 1. mω Thermal and Mechanical Characteristics, T j = 2 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case*** R th(j-c) Q Per IGBT.12 C/W Thermal Resistance, Junction to Case*** R th(j-c) D Per FWDi.19 C/W Contact Thermal Resistance, Case to Fin R th(c-f) Per Module,.18 C/W Thermal Grease Applied, λ grease = 1W/mK Comparative Tracking Index CTI 6 Clearance Distance in Air (Terminal to Base) d a(t-b) 3. mm Creepage Distance Along Surface d s(t-b) 64 mm (Terminal to Base) Clearance Distance in Air d a(t-t) 19 mm (Terminal to Terminal) Creepage Distance Along Surface d s(t-t) 4 mm (Terminal to Terminal) *Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). ***T C measurement point is just under the chips. 3
4 QID Amperes/33 Volts OUTPUT CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS 1 1 COLLECTOR CURRENT, I C, (AMPERES) T j = 1 C V GE = 19V COLLECTOR-CURRENT, I C, (AMPERES) V GE = 1V T j = 1 C COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) TRANSFER CHARACTERISTICS FREE-WHEEL DIODE FORWARD CHARACTERISTICS 1 1 COLLECTOR-CURRENT, I C, (AMPERES) V CE = V GE T j = 1 C EMITTER CURRENT, I E, (AMPERES) T j = 1 C GATE-EMITTER VOLTAGE, V GE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) 4
5 QID Amperes/33 Volts CAPACITANCE, C ies, C oes, C res, (nf) SWITCHING ENERGIES, E on, E off, E rec, (mj/pulse) V GE = V f = 1 khz CAPACITANCE VS. V CE C ies C oes C res COLLECTOR-EMITTER VOLTAGE, V CE, (VOLTS) GATE CHARGE, QG, (μc) SWITCHING ENERGY CHARACTERISTICS V CC = 18V V GE = ±1V R G(on) = 3Ω R G(off) = 1Ω L s = 1nH T j = 12 C Inductive Load E on E off E rec GATE-EMITTER VOLTAGE, V GE, (VOLTS) SWITCHING ENERGIES, E on, E off, E rec, (mj/pulse) V CE = 18V I C = 8A GATE CHARGE VS. V GE HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS V CC = 18V V GE = ±1V R G(on) = 3Ω R G(off) = 1Ω L s = 1nH T j = 1 C Inductive Load COLLECTOR CURRENT, I C, (AMPERES) E on E off E rec COLLECTOR CURRENT, I C, (AMPERES)
6 QID Amperes/33 Volts REVERSE BIAS SAFE OPERATING AREA FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA COLLECTOR CURRENT, I C, (AMPERES) V CC 2V V GE = ±1V R G(off) = 1Ω T j = 1 C COLLECTOR EMITTER VOLTAGE, V CES, (VOLTS) 4 REVERSE RECOVERY CURRENT, I rr, (AMPERES) V CC 2V di/dt = 1kA/µs T j = 1 C EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) 4 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c') Z th = R th (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) Single Pulse T C = 2 C Per Unit Base = R th(j-c) =.12 C/W (IGBT) R th(j-c) =.19 C/W (FWDi) TIME, (s) 6
C N V (4TYP) U (5TYP) Dimensions Inches Millimeters L 0.69± ±0.25 M N P Q
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