400V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID. Features. Ordering Information 400V 0.55Ω 10.5A. This Power MOSFET is produced using

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1 400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, VDSS RDS(ON) ID 400V 0.55Ω 10.5A provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features 10.5A, 400V, RDS(on) = = 10 V Low gate charge ( typical Fast switching 100% avalanche tested Improved dv/dt capability 30nC) Ordering Information PART NUMBER PACKAGE BRAND TO-220 0GFD TEL: FAX:

2 Absolute Maximum Ratings TC = 25 Cunless otherwise noted Symbol Parameter F Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25 C) - Continuous (TC = 100 C) A A IDM Drain Current- Pulsed (Note 1) A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 378 mj EAR Repetitive Avalanche Energy (Note 1) 13.9 mj dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25 C) W Derate above 25 C W/ C TJ, TSTG Operating and Storage Temperature Range -55 to +150 C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 C Thermal Characteristics Symbol Parameter SLPC SLFC Units RθJC Thermal Resistance, Junction-to-Case C/W RθCS Thermal Resistance, Case-to-Sink Typ C/W RθJA Thermal Resistance, Junction-to-Ambient C/W TEL: FAX:

3 Electrical Characteristics TC = 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µa V BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 250 µa, Referenced to 25 C V/ C IDSS Zero Gate Voltage Drain Current VDS = 400 V, VGS = 0 V µa VDS = 320 V, TC = 125 C µa IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V na IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V na On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID= 250 µa V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 5.25 A Ω Dynamic Characteristics Ciss Input Capacitance pf Coss Output Capacitance VDS = 25 V, VGS = 0 V, pf f = 1.0 MHz Crss Reverse Transfer Capacitance pf TEL: FAX:

4 Switching Characteristics td(on) Turn-On Delay Time ns tr Turn-On Rise Time ns VDD = 200 V, ID = 10.5A, RG = 25 Ω td(off) Turn-Off Delay Time ns tf Turn-Off Fall Time (Note 4, 5) ns Qg Total Gate Charge nc VDS = 320 V, ID = 10.5 A, Qgs Gate-Source Charge nc VGS = 10 V (Note 4, 5) Qgd Gate-Drain Charge nc Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current A ISM Maximum Pulsed Drain-Source Diode Forward Current A VSD Drain-Source Diode Forward Voltage VGS = 0 V,IS = 10.5 A V trr Reverse Recovery Time VGS = 0 V,IS = 10.5 A, dif / dt = 100 A/µs ns (Note 4) Qrr Reverse Recovery Charge µc Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6 mh, IAS = 10.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 C 3. ISD 10.5 A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25 C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature TEL: FAX:

5 Typical Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6 Typical Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-1. Maximum Safe Operating Area for SLPC Figure 9-2. Maximum Safe Operating Area for SLFC Figure 10. Maximum Drain Current vs Case Temperature

7 Typical Characteristics (Continued) Figure Transient Thermal Response Curve for SLPC Figure Transient Thermal Response Curve for SLFC

8 Gate Charge Test Circuit & Waveform 12V 200nF 50KΩ 300nF Same Type as DUT V GS 10V Q g V GS V DS Q gs Q gd 3mA DUT Charge Resistive Switching Test Circuit & Waveforms V DS R L V DS 90% V GS R G V DD 10V DUT 10% V GS t d(on) t r t d(off) tf t on t off Unclamped Inductive Switching Test Circuit & Waveforms V DS L BV DSS E AS = LI 2 AS BV DSS -V DD I D BV DSS I AS R G V DD I D (t) 10V DUT V DD V DS (t t p t p Time

9 Peak Diode Recovery dv/dt Test Circuit & Waveforms D U T + V D S _ I S D L D r i v e r R G S a m e T y p e a s D U T V D D V G S d v / d t c o n t r o l l e d b y R G I S D c o n t r o l l e d b y p u l s e p e r i o d V G S ( D riv e r ) D = G a te P u ls e W id th G a t e P u l s e P e r i o d 1 0 V I F M, B o d y D i o d e F o r w a r d C u r r e n t I S D ( D U T ) d i / d t I R M B o d y D i o d e R e v e r s e C u r r e n t V D S ( D U T ) B o d y D i o d e R e c o v e r y d v / d t V S D V D D B o d y D i o d e F o r w a r d V o l t a g e D r o p