2SJ280(L), 2SJ280(S)
|
|
- Hollie Franklin
- 5 years ago
- Views:
Transcription
1 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline LDPAK 4 4 D G S 1. Gate. Drain 3. Source 4. Drain
2 Absolute Maximum Ratings (Ta = 5 C) Item Symbol Ratings Unit Drain to source voltage V DSS 6 V Gate to source voltage V GSS ± V Drain current I D 3 A Drain peak current I D(pulse) * 1 1 A Body to drain diode reverse drain current I DR 3 A Avalanche current I AP * 3 3 A Avalanche energy E AR * 3 77 mj Channel dissipation Pch* 75 W Channel temperature Tch 15 C Storage temperature Tstg 55 to +15 C Notes 1. PW 1 µs, duty cycle 1%. Value at T C = 5 C 3. Value at Tch = 5 C, Rg 5 Ω
3 Electrical Characteristics (Ta = 5 C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown V (BR)DSS 6 V I D = 1 ma, V GS = voltage Gate to source breakdown voltage V (BR)GSS ± V I G = ± µa, V DS = Gate to source leak current I GSS ±1 µa V GS = ±16 V, V DS = Zero gate voltage drain current I DSS 5 µa V DS = 5 V, V GS = Gate to source cutoff voltage V GS(off) 1..5 V I D = 1 ma, V DS = 1 V Static drain to source on state resistance R DS(on) Ω I D = 15 A, V GS = 1 V* Ω I D = 15 A, V GS = 4 V* 1 Forward transfer admittance y fs 17 5 S I D = 15 A, V DS = 1 V* 1 Input capacitance Ciss 33 pf V DS = 1 V, V GS =, f = 1 MHz Output capacitance Coss 15 pf Reverse transfer capacitance Crss 48 pf Turn-on delay time t d(on) 3 ns I D = 15 A, V GS = 1 V, R L = Ω Rise time t r 17 ns Turn-off delay time t d(off) 5 ns Fall time t f 39 ns Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test V DF 1.5 V I F = 3 A, V GS = t rr ns I F = 3 A, V GS =, di F /dt = 5 A/µs 3
4 75 Power vs. Temperature Derating Channel Dissipation Pch (W) Case Temperature Tc ( C) Drain Current I D (A) Maximum Safe Operation Area Operation in this area is limited by R DS(on) 1 µ s 1 µ s 1 ms PW = 1 ms DC Operation (Tc = 5 C) 3 Ta = 5 C Drain to Source Voltage V DS (V) Drain Current I (A) D Typical Output Characteristics 1 V 6 V 4 V 3.5 V 3 V.5 V V GS = V Drain to Source Voltage V DS (V) Drain Current I (A) D Typical Transfer Characteristics Tc = 5 C 5 C 75 C Pulse Test V GS = 1 V Gate to Source Voltage V GS (V) 4
5 Drain to Source Saturation Voltage V DS (on) (V) Drain-Source Saturation Voltage vs. Gate-Source Voltage Pulse Test I D = 3 A A 1 A Gate to Source Voltage V GS (V) Static Drain-Source on State Resistance R DS(on) ( Ω ) Static Drain-Source on State Resistance vs. Drain Current V GS= 4 V 1 V Drain Current I D (A).1 Static Drain-Source on State Resistance vs. Temperature Static Drain-Source on State Resistance R DS(on) ( Ω ) Pulse test V GS= 4 V 1 V I = 3 A D 1 A, A I D = 3 A 1 A, A Case Temperature T C ( C) 5
6 1 Forward Transfer Admittance y fs (s) Forward Transfer Admittance vs. Drain Current Pulse Test V DS= 1 V Tc = 5 C 5 C 75 C Drain Current I D (A) 5 Body-Drain Diode Reverse Recovery Time Reverse Recovery Time t rr (ns) di/dt = 5 A/ µ s, V GS = Ta = 5 C Reverse Drain Current I DR (A) 1 Typical Capacitance vs. Drain-Source Voltage Ciss Capacitance C (pf) 1 1 V GS=, f = 1 MHz Coss Crss Drain to Source Voltage V (V) DS 6
7 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DD= 1 V 5 V 5 V VDS V DD= 1 V 5 V 5 V I D = 3 A V GS Gate Charge Qg (nc) Gate to Source Voltage V GS (V) 1 Switching Characteristics t d(off) Switching Time t (ns) t f t r t d(on) V GS = 1 V, V DD 3 V PW = µ s, duty < = 1% Drain Current I D (A) =: 5 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) Pulse Test V GS= 1 V 5 V, 5V Source to Drain Voltage V (V) SD Repetive Avaranche Energy E AR (mj) Maxmum Avalanche Energy vs. Channel Temperature Derating I AP = 3 A V DD = 5 V duty <.1% Rg > = 5 Ω Channel Temperature Tch ( C) 7
8 Avalanche Test Circuit and Waveform V DS Monitor Rg Vin 15 V 5Ω L IAP Monitor D.U.T V DD V DD E = AR I AP 1 L I AP I D V DSS V DSS VDD VDS V (BR)DSS Normalized Transient Thermal Impedance γ S (t) µ D = Shot Pulse Normalized Transient Thermal Impedance vs. Pulse Width T PW T C = 5 C θch c (t) = γ S (t) θch c θch c = 1.67 C/W, T C = 5 C 1 µ 1 m 1 m 1 m 1 1 Pulse Width PW (s) P DM D = PW T Switching Time Test Circuit Vin Monitor D.U.T Vout Monitor Vin 1 V 5 Ω R L V. DD =. 3 V Vin 1% Waveforms 9% 9% 9% Vout 1% t d (on) t r t d (off) 1% t f 8
9 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice.. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 9
2SJ182(L), 2SJ182(S)
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable
More information2SJ332(L), 2SJ332(S)
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from V source Suitable
More information2SJ172. Silicon P-Channel MOS FET
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable
More information2SJ174. Silicon P-Channel MOS FET
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable
More information2SK1169, 2SK1170. Silicon N-Channel MOS FET. Application. Features. Outline. High speed power switching
Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
More information2SK1254(L), 2SK1254(S)
Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching V gate drive device Can be driven from V source Suitable for motor drive, DC-DC converter,
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK6A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Unit: mm V gate drive Low drain-source ON resistance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3567
SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.7Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK15J60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. (typ.) High forward transfer admittance: Y fs
More informationTOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON-resistance: R DS (ON)
More informationP-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) 2SK3538
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) SK Switching Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 7 mω (typ.) High forward
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667
SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.7Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3767
SK77 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK77 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) 2SK4013
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) SK Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =. Ω (typ.) High forward transfer admittance:
More information500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) 2SK3565
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) SK Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj
SK TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) SK Switching Regulator Applications Unit: mm Low drain source ON resistance : R DS (ON) =. Ω (typ.) High forward transfer admittance
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T
TKJT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TKJT Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK12A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) Motor Drive Application Load Swithch Application Chopper Regulator and DC DC Converter Application Unit: mm Low drain-source ON resistance:
More informationTPCF8402 F6B TPCF8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)
TPCF84 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF84 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source
More informationTSP10N60M / TSF10N60M
TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationOptiMOS 2 Power-Transistor
IPI3N3LA, IPP3N3LA OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC ) for target applications N-channel - Logic level Product Summary V DS 25 V
More informationTPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C)
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter
More informationOptiMOS 3 Power-MOSFET
BSB14N8NP3 G OptiMOS 3 Power-MOSFET Features Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Low profile (
More informationOptiMOS TM Power-Transistor
Type OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. % avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC ) for target applications
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385 2SK2385 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON resistance
More informationOptiMOS 3 Power-MOSFET
OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Product Summary V DS 3 V R DS(on),max
More informationOptiMOS 2 Power-Transistor
OptiMOS 2 Power-Transistor Features Ideal for high-frequency dc/dc converters Qualified according to JEDEC 1) for target application N-channel, logic level Product Summary V DS 25 V R DS(on),max (SMD version)
More informationOptiMOS TM Power-Transistor
Type IPD25N6N OptiMOS TM Power-Transistor Features Optimized for synchronous rectification % avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC ) for target
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 1 V R DS(on),max 7.2 mω I D 8 A Very low on-resistance R DS(on) 175 C operating
More informationOptiMOS 3 Power-MOSFET
BSC886N3LS G OptiMOS 3 Power-MOSFET Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications N-channel Logic level Product
More informationOptiMOS 3 Power-Transistor
BSZ4N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS 4 V
More informationGP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
More informationOptiMOS TM 3 Power-Transistor
OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 15 V R DS(on),max (TO263) 1.8 mw I D 83
More informationOptiMOS 2 Power-Transistor
IPB12CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max (TO252) 12.4
More informationOptiMOS 2 Power-Transistor
IPB26CN1N G IPD25CN1N G OptiMOS 2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 1 V R DS(on),max
More informationOptiMOS 3 Power-Transistor
BSC27N4LS G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS 4 V
More informationOptiMOS TM 3 Power-Transistor
IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004
TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: R DS (ON) = 9 mω (typ.) High
More informationOptiMOS TM Power-MOSFET
BSC1NE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance N-channel Qualified
More informationSIPMOS Power-Transistor
SPP18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175 C operating temperature Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A PG-TO22-3 Type Package
More informationIRF5851. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge.
PD-93998B HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge G S2 G2 2 3 6 5 4 D S D2 N-Ch P-Ch DSS 20-20 R DS(on)
More information400V N-Channel MOSFET GENERAL DESCRIPTION VDSS RDS(ON) ID. Features. Ordering Information 400V 0.55Ω 10.5A. This Power MOSFET is produced using
400V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 0.74 Ω (typ.)
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF82 TPCF82 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 24 mω (typ.)
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2610
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) High
More informationOptiMOS 2 + OptiMOS -P 2 Small Signal Transistor
BSZ5DCKD H OptiMOS + OptiMOS -P Small Signal Transistor Features Product Summary Complementary P + channel P Enhancement mode Super Logic level (.5V rated) Common drain Avalanche rated V DS - V R DS(on),max
More informationOptiMOS 3 Power-Transistor
Type IPD135N3L G OptiMOS 3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary V DS
More informationOptiMOS 3 M-Series Power-MOSFET
BSO15N3MD G OptiMOS 3 M-Series Power-MOSFET Features Dual N-channel Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested Product Summary V DS
More informationOptiMOS (TM) 3 Power-Transistor
BSZ67N6LS3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product
More informationOptiMOS 3 M-Series Power-MOSFET
BSO33N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS % Avalanche tested N-channel Product Summary V DS 3 V R
More informationOptiMOS 3 Power-Transistor
OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V R DS(on),max 2.8 mω I D 1 A Very low on-resistance R DS(on) 175 C operating
More informationOptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS 8 V R DS(on).2 m Features N-channel - Enhancement mode AEC qualified I D 3 A H-PSOF-8- Tab MSL up to 26 C peak reflow 75 C operating temperature Green product
More informationOptiMOS TM Power-MOSFET
BSNNE2LS OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Very low parasitic inductance Low profile (
More informationOptiMOS 2 Small-Signal-Transistor
OptiMOS Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Product Summary V DS 3 V R DS(on),max V GS =1 V 16 mω V GS =4.5 V 8 I D 1.4 A Qualified according
More informationOptiMOS (TM) 3 Power-Transistor
Type BSZ123N8NS3 G OptiMOS (TM) 3 Power-Transistor Package Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance Product Summary V DS 8 V
More informationOptiMOS TM Power-MOSFET
OptiMOS TM Power-MOSFET Features Optimized for high performance SMPS Integrated monolithic Schottky-like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested Superior thermal resistance
More informationTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H
TPCA-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications.±..7.±..
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC84 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small
More informationOptiMOS 2 Power-Transistor
BSC32N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1 for target applications Product Summary V
More informationOptiMOS (TM) 3 Power-Transistor
IPD96N8N3 G OptiMOS (TM) 3 Power-Transistor Features Ideal for high frequency switching Optimized technology for DC/DC converters Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 8 V
More informationOptiMOS P2 Small-Signal-Transistor
OptiMOS P Small-Signal-Transistor Features P-channel Enhancement mode Super Logic Level (.5V rated) Avalanche rated Qualified according to AEC Q % lead-free; RoHS compliant Product Summary V DS - V R DS(on),max
More informationOptiMOS 3 M-Series Power-MOSFET
BSC12N3MS G OptiMOS 3 M-Series Power-MOSFET Features Optimized for 5V driver application (Notebook, VGA, POL) Low FOM SW for High Frequency SMPS 1% Avalanche tested N-channel Product Summary V DS 3 V R
More informationOptiMOS -P2 Power-Transistor
Type IPD5P4P4-13 OptiMOS -P2 Power-Transistor Package Marking Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow Product Summary V DS -4 V R DS(on) 12.6 mw I
More informationOptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS V R DS(on).5 m Features N-channel - Enhancement mode AEC qualified MSL up to 26 C peak reflow 75 C operating temperature I D 3 A P/G-HSOF-8- Tab 8 Tab Green
More informationOptiMOS Power-Transistor
OptiMOS Power-Transistor Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 C operating temperature Product Summary V DS 6 V R DS(on),max SMDversion
More informationOptiMOS TM Power-Transistor
Type BSC14N6NS OptiMOS TM Power-Transistor Features Optimized for high performance SMPS, e.g. sync. rec. 1% avalanche tested Superior thermal resistance N-channel Qualified according to JEDEC 1) for target
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode / Logic level Avalanche rated Product Summary V DS - V R DS(on),max.8 W I D -.36 A Pb-free lead plating; RoHS compliant Footprint compatible
More informationOptiMOS TM Power-MOSFET
BSC18NE2LSI OptiMOS TM Power-MOSFET Features Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resistance R DS(on) @ V GS =4.5 V 1% avalanche tested N-channel
More informationOptiMOS 2 Power-Transistor
BSO9N3S OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC ) for target applications Product Summary V DS
More informationOptiMOS TM P3 Power-Transistor
BSZ86P3NS3E G OptiMOS TM P3 Power-Transistor Features single P-Channel in S3O8 Qualified according JEDEC ) for target applications 5 C operating temperature V GS =25 V, specially suited for notebook applications
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA83 TPCA83 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications.±..27 8.4±. Unit: mm. M A Small
More informationN-channel TrenchMOS transistor
PSMN2-5W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Very low on-state resistance Fast switching Low thermal resistance g d s V DSS = 5 V I D = 73 A R DS(ON) 2 mω GENERAL DESCRIPTION PINNING
More informationDistributed by: www.jameco.com 1-8-831-4242 The content and copyrights of the attached material are the property of its owner. BSC22N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS
More informationOptiMOS 3 Power-Transistor
IPI2N15N3 G IPP2N15N3 G OptiMOS 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Product Summary V DS 15 V R DS(on),max 2 mw I D 5 A Very low on-resistance
More informationOptiMOS -T2 Power-Transistor
OptiMOS -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 4.1 mω Features N-channel - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 MSL1 up to 26 C peak reflow 175 C operating temperature
More informationOptiMOS Power-Transistor
OptiMOS Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q11 qualified MSL1 up to 26 C peak reflow 175 C operating temperature Green package (lead free) Product Summary V DS 75 V R
More informationIXTT440N04T4HV V DSS
Advance Technical Information TrenchT4 TM Power MOSFET IXTT44N4T4HV V DSS = 4V I D25 = 44A R DS(on).25m N-Channel Enhancement Mode Avalanche Rated TO-268HV Symbol Test Conditions Maximum Ratings V DSS
More informationFEATURES SYMBOL QUICK REFERENCE DATA
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Low on-state resistance Fast switching d g s V DSS = 2 V I D = 7.6 A R DS(ON) 23 mω GENERAL DESCRIPTION N-channel enhancement mode field-effect power
More informationOptiMOS TM 3 Power-Transistor
Type OptiMOS TM 3 Power-Transistor Features Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 15 C operating temperature BSZ12DN2NS3
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features P-Channel Enhancement mode Logic level Product Summary V DS - V R DS(on),max 8 mw I D - A Avalanche rated Pb-free lead plating; RoHS compliant PG-SOT-3 Qualified
More informationOptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max.7 mω Features N-channel - Enhancement mode I D 8 A PG-TO263-7-3 AEC Q qualified MSL up to 26 C peak reflow 75 C operating temperature
More informationCoolMOS Power Transistor
CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Product Summary V DS @ T J =25 C 9 V R DS(on),max @ T J = 25 C.5 Ω Q g,typ 68 nc Qualified
More informationPHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
M3D3 Rev. 1 16 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold
More informationSIPMOS Small-Signal-Transistor
SIPMOS Small-Signal-Transistor Features N-channel Depletion mode dv /dt rated Product Summary V DS 6 V R DS(on),max 8 Ω I DSS,min.13 A Available with V GS(th) indicator on reel Pb-free lead-plating; RoHS
More informationOptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 1 V R DS(on),max 6.7 mw Features N-channel - Normal Level - Enhancement mode AEC qualified I D 9 A PG-TO252-3-313 TAB MSL1 up to 26 C peak reflow 175
More informationOptiMOS -T Power-Transistor
IPB35N2S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 2 V R DS(on),max 26.3 mw Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode I D 35 A PG-TO263-3-2 Tab
More informationOptiMOS -P Small-Signal-Transistor
OptiMOS -P Small-Signal-Transistor Features P-Channel Enhancement mode Super Logic level ( 2.5 V rated) 5 C operating temperature Avalanche rated Product Summary V DS -2 V R DS(on),max 55 mω I D -.63 A
More informationOptiMOS -T Power-Transistor Product Summary
OptiMOS -T Power-Transistor Product Summary V DS 1 V R DS(on),max 26 mw Features N-channel - Enhancement mode Automotive AEC Q11 qualified I D 35 A PG-TO252-3-11 MSL1 up to 26 C peak reflow 175 C operating
More informationOptiMOS 2 Power-Transistor
BSC79N3S G OptiMOS 2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC converters Qualified according to JEDEC 1) for target applications Product Summary
More informationCoolMOS TM Power Transistor
CoolMOS TM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC 1) for target applications Pb-free lead plating;
More informationOptiMOS -T2 Power-Transistor Product Summary
OptiMOS -T2 Power-Transistor Product Summary V DS 6 V R DS(on),max 9. mω Features N-channel - Enhancement mode I D 5 A PG-TO252-3-11 AEC qualified MSL1 up to 26 C peak reflow 175 C operating temperature
More informationOptiMOS TM -T2 Power-Transistor
OptiMOS TM -T2 Power-Transistor Product Summary V DS 4 V R DS(on),max 7.2 mω I D 5 A Features Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 AEC qualified MSL1 up to 26 C peak reflow
More informationOptiMOS -5 Power-Transistor
OptiMOS -5 Power-Transistor Product Summary V DS 4 V R DS(on),max mw Features OptiMOS - power MOSFET for automotive applications I D A PG-HSOF-5 N-channel - Enhancement mode - Normal Level AEC Q qualified
More informationOptiMOS -P2 Power-Transistor Product Summary
OptiMOS -P2 Power-Transistor Product Summary V DS -3 V R DS(on) 4.5 mω Features P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 26 C peak reflow I D -9 A PG-TO252-3-11 175 C operating
More informationSIPMOS Power-Transistor
SPB18P6P G SIPMOS Power-Transistor Features P-Channel Enhancement mode Avalanche rated Product Summary V DS -6 V R DS(on),max.13 Ω I D -18.6 A dv /dt rated 175 C operating temperature PG-TO63-3 Halogen-free
More informationSSF8NP60U. Main Product Characteristics: 600V V DSS. 0.73Ω (typ.) Features and Benefits: Description: Absolute max Rating:
Main Product Characteristics: V DSS 600V R DS (on) 0.73Ω (typ.) I D 8A 1 Features and Benefits: TO-220 Marking and pin Assignment Schematic diagram High dv/dt and avalanche capabilities 100% avalanche
More information