TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK12A50D
|
|
- Darcy Hampton
- 5 years ago
- Views:
Transcription
1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance: Y fs =. S (typ.) Low leakage current: I DSS = μa (V DS = V) Enhancement mode: V th =. to. V (V DS = V, I D = ma) Absolute Maximum Ratings (Ta = C) Characteristics Symbol Rating Unit Drain-source voltage V DSS V Gate-source voltage V GSS ± V Drain current DC (Note ) I D Pulse (t = ms) (Note ) I DP Drain power dissipation (Tc = C) P D W Single pulse avalanche energy (Note ) E AS mj Avalanche current I AR A Repetitive avalanche energy (Note ) E AR. mj Channel temperature T ch C Storage temperature range T stg - to C A JEDEC JEITA TOSHIBA : Gate : Drain : Source Weight:.7 g (typ.) SC-7 -UB Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c).7 C/W Thermal resistance, channel to ambient R th (ch-a). C/W Note : Ensure that the channel temperature does not exceed. Note : V DD = 9 V, T ch = C(initial), L =. mh, R G = Ω, I AR = A Note : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. -9-
2 TKAD Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ± V, V DS = V ± μa Drain cut-off current I DSS V DS = V, V GS = V μa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V V Gate threshold voltage V th V DS = V, I D = ma.. V Drain-source ON resistance R DS (ON) V GS = V, I D = A.. Ω Forward transfer admittance Y fs V DS = V, I D = A.. S Input capacitance C iss Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz Output capacitance C oss Rise time t r V V GS I D = A V OUT V Turn-on time t on R L = Ω Ω Switching time Fall time t f V DD V pf ns Turn-off time t off Duty %, t w = μs Total gate charge Q g Gate-source charge Q gs V DD V, V GS = V, I D = A nc Gate-drain charge Q gd 9 Source-Drain Ratings and Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note ) I DR A Pulse drain reverse current (Note ) I DRP A Forward voltage (diode) V DSF I DR = A, V GS = V.7 V Reverse recovery time t rr I DR = A, V GS = V, ns Reverse recovery charge Q rr di DR /dt = A/μs μc Marking KAD Part No. (or abbreviation code) Lot No. A line indicates Lead(Pb)-Fee Finish. -9-
3 TKAD I D V DS, 7 Tc = C... VGS =.V, 7. I D V DS Tc = C VGS = V DRAIN-SOURCE VOLTAGE V DS DRAIN-SOURCE VOLTAGE V DS I D V GS VDS = V Tc = C DRAIN-SOURCE VOLTAGE VDS V DS V GS Tc = ID = A GATE-SOURCE VOLTAGE V GS GATE-SOURCE VOLTAGE V GS FORWARD TRANSFER ADMITTANCE Yfs (S) Y fs I D VDS = V Tc = C.. DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω) R DS (ON) I D Tc = C VGS = V V.. DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) -9-
4 TKAD DRAIN-SOURCE ON-RESISTANCE RDS (ON) (Ω) R DS (ON) Tc... ID = A. VGS = V. DRAIN REVERSE CURRENT IDR (A). Tc = C. I DR V DS VGS =, V CASE TEMPERATURE Tc ( C) DRAIN-SOURCE VOLTAGE V DS CAPACITANCE V DS V th Tc CAPACITANCE C (pf) VGS = V f = MHz Tc = C. Ciss Coss Crss GATE THRESHOLD VOLTAGE Vth VDS = V ID = ma DRAIN-SOURCE VOLTAGE V DS CASE TEMPERATURE Tc ( C) DRAIN POWER DISSIPATION PD (W) P D Tc DRAIN-SOURCE VOLTAGE VDS VDS DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDD = V VGS ID = A Tc = C GATE-SOURCE VOLTAGE VGS CASE TEMPERATURE Tc ( C) TOTAL GATE CHARGE Q g (nc) -9-
5 TKAD NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/rth (ch-c).... μ.. Duty=... SINGLE PULSE r th t w PDM μ m m m PULSE WIDTH t w (s) t T Duty = t/t Rth (ch-c) =.7 C/W ID max (PULSED) * SAFE OPERATING AR E AS T ch... ID max (CONTINUOUS) * DC OPERATION Tc = C ms * * SINGLE NONREPETITIVE PULSE Tc= C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. μs * VDSS max AVALANCHE ENERGY EAS (mj) 7 CHANNEL TEMPERATURE (INITIAL) T ch ( C) V B VDSS DRAIN-SOURCE VOLTAGE V DS V I AR V DD V DS TEST CIRCUIT R G = Ω V DD = 9 V, L =. mh WAVEFORM = BVDSS ΕAS L I BVDSS VDD -9-
6 TKAD RESTRICTIONS ON PRODUCT USE 77-EN GENERAL The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. -9-
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667
SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.7Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK15J60U
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. (typ.) High forward transfer admittance: Y fs
More informationTOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON-resistance: R DS (ON)
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T
TKJT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TKJT Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj
SK TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) SK Switching Regulator Applications Unit: mm Low drain source ON resistance : R DS (ON) =. Ω (typ.) High forward transfer admittance
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3567
SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.7Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3767
SK77 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK77 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) 2SK3565
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) SK Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004
TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: R DS (ON) = 9 mω (typ.) High
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) 2SK4013
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) SK Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =. Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8037-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC7-H TPC7-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028
TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) 2SK3538
SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) SK Switching Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 7 mω (typ.) High forward
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) Motor Drive Application Load Swithch Application Chopper Regulator and DC DC Converter Application Unit: mm Low drain-source ON resistance:
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Unit: mm V gate drive Low drain-source ON resistance:
More informationTOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H
TPCA-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications.±..7.±..
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026
TPC26 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC26 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8017-H
TPC7-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC7-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
More informationTPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C)
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA83 TPCA83 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications.±..27 8.4±. Unit: mm. M A Small
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) High Power Amplifier Application Unit: mm High breakdown voltage: V DSS = 8 V Complementary to SJ68.. MAX. 5.9 MAX. Ф. ±... 9..5. ±..
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK6A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance:
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF82 TPCF82 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 24 mω (typ.)
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU
SSMK7FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMK7FU High Speed Switching Applications Analog Switch Applications Unit: mm Suitable for high-density mounting due to compact package
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC84 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small
More informationTOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type. (P Channel U MOS IV/N Channel U-MOS III) TPC8405. Rating P Channel N Channel
TPC85 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications (P Channel U MOS IV/N Channel U-MOS
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE. DC I D 100 ma Pulse I DP 200
High Speed Switching Applications Analog Switch Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSMJ6TE Small package Low on-resistance : R on = 8 Ω (max) (@V GS = 4 V) : R on =
More informationTOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSMJ7TU High-Speed Switching Applications 4 V drive Low ON-resistance: R on = 225 mω (max) (@V GS = ) R on = 7 mω (max) (@V GS = V) Absolute Maximum
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385 2SK2385 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON resistance
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 0.74 Ω (typ.)
More informationTPCF8402 F6B TPCF8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)
TPCF84 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF84 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm Small package Low on resistance : R on = 200 mω (max) (V GS = 4 V) : R on = 250 mω (max) (V
More informationTPCS8209 查询 TPCS8209 供应商 TPCS8209. Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools. Maximum Ratings (Ta = 25 C)
查询 TPCS89 供应商 TPCS89 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS89 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm Small footprint
More informationTPCP8402 TPCP8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source
More informationTPC8203 TPC8203. Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs. Maximum Ratings (Ta = 25 C) Circuit Configuration
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII) TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2610
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) High
More informationTOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168. DC I D 200 ma Pulse I DP 800
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm Excellent switching time: ton = 14 ns (typ.) High
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiii) 2SK2613
SK6 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiii) SK6 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON-resistance: R DS
More informationTPC8116-H TPC8116-H. High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter
More informationTPCP8404 TPCP8404. Portable Equipment Applications Motor Drive Applications. Absolute Maximum Ratings (Ta = 25 C) Circuit Configuration
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ) TPCP8 Portable Equipment Applications Motor Drive Applications Low drain-source ON-resistance : P Channel R DS (ON) = 38 mω(typ.)
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE
SSMNFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMNFE High Speed Switching Applications Analog Switching Applications Unit: mm Small package Low ON resistance : R on =. Ω (max) (@V GS
More informationTOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU 2 Input NOR Gate Features High-level output current: I OH /I OL = ±8 ma (min) at = 3.0 High-speed operation: t pd = 2.4 ns (typ.) at
More informationGT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking
GTQ TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTQ High Power Switching Applications Motor Control Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE. DC I D 100 ma Pulse I DP 200
SSMNFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMNFE High Speed Switching Applications Analog Switching Applications.±. Unit: mm Compact package suitable for high-density mounting Low
More informationTOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel/N-Channel Ultra-High-Speed U-MOSIII) TPC8406-H. Rating P-Channel N-Channel
TPC86-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel/N-Channel Ultra-High-Speed U-MOSIII) TPC86-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable
More informationTOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7002BFU. DC I D 200 ma Pulse I DP 800
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7BFU High-Speed Switching Applications Analog Switch Applications Small package Low ON-resistance : R DS(ON) =. Ω (max) (@V GS =.
More informationTOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7FU High Speed Switching Applications Analog Switch Applications Unit: mm.v drive Low ON-resistance R DS(ON) =.6 Ω (max) (@V GS =. V) R DS(ON)
More informationTOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE
SSM6L3FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L3FE High-Speed Switching Applications Analog Switch Applications.6±. Unit: mm N-ch:.2-V drive.2±. P-ch:.2-V drive N-ch, P-ch,
More informationRating Q1 Q (Note 4a)
TPCA Q:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U-MOSⅢ) Q:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U-MOSⅢ) TPCA DC-DC CONVERTER Notebook
More information2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)
SC7 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) SC7 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) =. V (max) (IC = A) High speed switching time:
More informationMP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications
More information2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C)
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for HDTV&Digital TV. Unit: mm High voltage: VCBO = V Low saturation voltage: VCE (sat) = V (max) High speed: tf =.
More information2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC42 Video Output for High Definition VDT High Speed Switching Applications Unit: mm High transition frequency: ft = 4 MHz (typ.) (VCE = V, IC = 7 ma)
More informationTC4013BP,TC4013BF,TC4013BFN
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4013BP,TC4013BF,TC4013BFN TC4013B Dual D-Type Flip Flop TC4013B contains two independent circuits of D type flip-flop. The input level applied
More informationTC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX08F/FN/FT/FK TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK Low-Voltage Quad 2-Input AND Gate with 5-V Tolerant Inputs and Outputs The
More informationTA78033AS, TA7804AS, TA7805AS, TA7807AS, TA7808AS, TA7809AS
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA7833AS, TA784AS, TA785AS, TA787AS, TA788AS, TA789AS TA7833, 4, 5, 7, 8, 9AS 1 A Three-Terminal Positive oltage Regulator The TA78***AS series
More informationTC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX244F/FW/FT/FK TC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK Low-Voltage Octal Bus Buffer with 5-V Tolerant Inputs and Outputs The
More informationFEATURES SYMBOL QUICK REFERENCE DATA
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Low on-state resistance Fast switching d g s V DSS = 2 V I D = 7.6 A R DS(ON) 23 mω GENERAL DESCRIPTION N-channel enhancement mode field-effect power
More informationN-channel TrenchMOS transistor
PSMN2-5W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Very low on-state resistance Fast switching Low thermal resistance g d s V DSS = 5 V I D = 73 A R DS(ON) 2 mω GENERAL DESCRIPTION PINNING
More informationP-channel enhancement mode MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = 2 V Fast switching Logic level compatible I D =.2 A Subminiature surface mount g package R DS(ON). Ω (V GS =. V) GENERAL DESCRIPTION
More informationTC4066BP,TC4066BF,TC4066BFN,TC4066BFT
TOSHIBA MOS Digital Integrated ircuit Silicon Monolithic T466BP/BF/BFN/BFT T466BP,T466BF,T466BFN,T466BFT T466B Quad Bilateral Switch T466B contains four independent circuits of bidirectional switches.
More informationTLP250 TLP250. Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive. Truth Table
TOSHIB Photocoupler Gals Ired & Photo IC TLP20 Transistor Inverter Inverter For ir Conditioner IGBT Gate Drive Power MOS FET Gate Drive Unit in mm The TOSHIB TLP20 consists of a Gals light emitting diode
More informationPHP7NQ60E; PHX7NQ60E
Rev. 1 2 August 22 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ6E in TO-22AB (SOT78) PHX7NQ6E in isolated TO-22AB. 2. Features Very
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin
More information2SJ280(L), 2SJ280(S)
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable
More informationPHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
M3D3 Rev. 1 16 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
BUK755-3A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using V DS Drain-source voltage
More information2SJ332(L), 2SJ332(S)
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from V source Suitable
More informationTA7262P,TA7262P(LB),TA7262F
TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7262P,TA7262P(LB),TA7262F DC MOTOR DRIVER (3 PHASE Bi DIRECTIONAL) The TA7262P / P (LB) / F are 3 Phase Bi Directional supply voltage control
More informationFEATURES SYMBOL QUICK REFERENCE DATA
FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Low on-state resistance Fast switching Low thermal resistance g d s V DSS = V I D = 8 A R DS(ON) 9 mω GENERAL DESCRIPTION N-channel enhancement mode
More informationGP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH
Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
More informationTC74VHC164F,TC74VHC164FN,TC74VHC164FT,TC74VHC164FK
TOSHIBA CMOS igital Integrated Circuit Silicon Monolithic TC74VHC164F/FN/FT/FK TC74VHC164F,TC74VHC164FN,TC74VHC164FT,TC74VHC164FK 8-Bit Shift egister (S-IN, P-OUT) The TC74VHC164 is an advanced high speed
More informationTC74VHCT573AF,TC74VHCT573AFW,TC74VHCT573AFT
TOSHIBA CMOS igital Integrated Circuit Silicon Monolithic TC74HCT573AF/AFW/AFT TC74HCT573AF,TC74HCT573AFW,TC74HCT573AFT Octal -Type Latch with 3-State Output The TC74HCT573A is an advanced high speed CMOS
More informationPHM21NQ15T. TrenchMOS standard level FET
M3D879 Rev. 2 11 September 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO8)
More informationFEATURES SYMBOL QUICK REFERENCE DATA. V DSS = 55 V Very low on-state resistance Fast switching
PHP37N6LT, PHB37N6LT, PHD37N6LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = 55 V Very low on-state resistance Fast switching I D = 37 A Stable off-state characteristics High thermal
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
BUK958-55 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench V DS Drain-source voltage
More informationTO220AB & SOT404 PIN CONFIGURATION SYMBOL
BUK754-55A BUK764-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope V DS Drain-source
More informationTC74HC148AP,TC74HC148AF
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC148AP,TC74HC148AF 8-to-3 Line Priority Encoder The TC74HC148A is a high speed CMOS 8-to-3 LINE ENCODER fabricated with silicon gate C2MOS
More information2SJ182(L), 2SJ182(S)
Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable
More informationPINNING - SOT223 PIN CONFIGURATION SYMBOL
BUK78-55 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface V DS Drain-source
More informationTC74HC4051AP,TC74HC4051AF,TC74HC4051AFT TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT TC74HC4053AP,TC74HC4053AF,TC74HC4053AFN,TC74HC4053AFT
T4H40,40P/F/FT,40P/F/FN/FT TOSHI MOS Digital Integrated ircuit Silicon Monolithic T4H40P,T4H40F,T4H40FT T4H40P,T4H40F,T4H40FT T4H40P,T4H40F,T4H40FN,T4H40FT T4H40P/F/FT 8-hannel nalog Multiplexer/Demulitiplexer
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL. tab
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench V DS Drain-source voltage 55
More informationTC74HC74AP,TC74HC74AF,TC74HC74AFN
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC74AP/AF/AFN TC74HC74AP,TC74HC74AF,TC74HC74AFN Dual D-Type Flip Flop Preset and Clear The TC74HC74A is a high speed CMOS D FLIP FLOP fabricated
More informationµtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.
M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in
More informationPINNING - SOT223 PIN CONFIGURATION SYMBOL
BUK86A GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level fieldeffect power transistor in a plastic envelope V DS Drainsource voltage 6 V suitable
More informationPHP/PHB/PHD55N03LTA. TrenchMOS Logic Level FET
Rev. 4 4 September 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP55N3LTA in a SOT78 (TO-22AB)
More informationN-channel TrenchMOS standard level FET
Rev. 2 27 November 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More informationPHP/PHB174NQ04LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.
Rev. 1 12 May 24 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level
More informationTC74HC373AP,TC74HC373AF,TC74HC373AFW
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC373AP/AF/AFW TC74HC373AP,TC74HC373AF,TC74HC373AFW Octal D-Type Latch with 3-State Output The TC74HC373A is a high speed CMOS OCTAL LATCH
More informationPINNING - SOT404 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope V DS Drain-source voltage 55 V suitable
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationN-channel TrenchMOS logic level FET
Rev. 2 3 November 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
More information500V N-Channel MOSFET
830 / 830 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize
More informationFeatures. T A =25 o C unless otherwise noted
NDS65 NDS65 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high cell
More information2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 3 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level
More informationP-Channel Enhancement Mode Field Effect Transistor PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source
More informationBUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G)
Rev. 1 3 August 27 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive
More informationPHP/PHB/PHD45N03LTA. TrenchMOS logic level FET
Rev. 3 2 October 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP45N3LTA in SOT78 (TO-22AB)
More informationPSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses
Rev. 2 25 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a wide
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT fieldeffect power transistor in a plastic envelope. BUK455 A B The device is intended for use in V DS
More information