TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T
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1 TKJT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TKJT Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.Ω (typ.) High forward transfer admittance: Y fs = 5 S (typ.) Low leakage current: I DSS = μa (V DS = V) Enhancement-mode: V th =.~5. V (V DS = V, I D = ma).max.. 5.9max. Ф.± ±. Absolute Maximum Ratings (Ta = 5 C) Characteristics Symbol Rating Unit.± ±.5 Drain-source voltage V DSS V Gate-source voltage V GSS ± V Drain current DC (Note ) I D Pulse (t = ms) (Note ) I DP Drain power dissipation () P D W Single pulse avalanche energy (Note ) E AS 57 mj Avalanche current (Note ) I AR A Repetitive avalanche energy E AR mj Channel temperature T ch 5 C Storage temperature range T stg -55~5 C A.max. 5.5± Gate. Drain(heat sink). Source JEDEC JEITA TOSHIBA 5.5±. Weight :. g (typ.)..max. SC-5 -CB Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c). C/W Thermal resistance, channel to ambient R th (ch-a) 5 C/W Note : Please use devices on conditions that the channel temperature is below 5 C. Note : V DD = 9 V, T ch = 5 C (initial), L =. mh, R G = 5 Ω, I AR = A Note : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 7--
2 TKJT Electrical Characteristics (Ta = 5 C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ± V, V DS = V ± μa Drain cut-off current I DSS V DS = V, V GS = V μa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V V Gate threshold voltage V th V DS = V, I D = ma. 5. V Drain-source ON resistance R DS (ON) V GS = V, I D = A.. Ω Forward transfer admittance Y fs V DS = V, I D = A 5 S Input capacitance C iss 9 Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz Output capacitance C oss 9 Rise time t r V V GS I D = A V OUT V Switching time Turn-on time t on R L = 5Ω 5 Ω Fall time t f 5 V DD V Turn-off time t off Duty < = %, t w = μs pf ns Total gate charge Q g 7 Gate-source charge Q gs V DD V, V GS = V, I D = A 5 Gate-drain charge Q gd nc Source-Drain Ratings and Characteristics (Ta = 5 C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note ) I DR A Pulse drain reverse current (Note ) I DRP A Forward voltage (diode) V DSF I DR = A, V GS = V -.7 V Reverse recovery time t rr I DR = A, V GS = V, 55 ns Reverse recovery charge Q rr di DR /dt = A/μs μc Marking TOSHIBA KJT Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb)-Free Finish 7--
3 TKJT I D V DS 7 I D V DS VGS = 5.5V 7.5 VGS = 5.5 V 5 5 Drain-source voltage VDS Drain-source voltage VDS VDS = V I D V GS Tc = 55 C 5 Drain-source voltage VDS V DS V GS ID = A Gate-source voltage VGS Gate-source voltage VGS Forward transfer admittance Yfs (S).. VDS = V Y fs I D R DS (ON) I D Tc = 55 C 5 Drain-source ON resistance RDS (ON) (Ω). VGS =,5 V. 7--
4 TKJT Drain-source ON resistance RDS (ON) (Ω) VGS = V R DS (ON) Tc ID = A Drain reverse current IDR (A),5 5 I DR V DS VGS = V Case temperature Tc ( C) Drain-source voltage VDS Capacitance V DS 5 V th Tc Capacitance C (pf) VGS = V f = MHz Ciss Coss Crss. Drain-source voltage VDS Gate threshold voltage Vth VDS = V ID = ma Case temperature Tc ( C) Drain power dissipation PD (W) 5 P D Tc Drain-source voltage VDS 5 VDS Dynamic input / output characteristics VDD = V VGS ID = A V V Gate-source voltage VGS Case temperature Tc ( C) Total gate charge Qg (nc) 7--
5 TKJT r th t w Normalized transient thermal impedance rth (t)/rth (ch-c).. μ Duty= SINGLE PULSE PDM μ m m m t T Duty = t/t Rth (ch-c) =. C/W Pulse width t w (s) SAFE OPERATING AREA E AS T ch ID max (pulse) * ID max (continuous) ms * DC OPEATION μs * Avalanche energy EAS (mj) Single pulse Ta=5. Curves must be derated linearly with increase in temperature.. VDSS max Drain-source voltage V DS Channel temperature (initial) T ch ( C) 5 V 5 V B VDSS I AR V DD V DS TEST CURCUIT R G = 5 Ω V DD = 9 V, L =. mh WAVE FORM = BVDSS ΕAS L I BVDSS VDD 5 7--
6 TKJT RESTRICTIONS ON PRODUCT USE 77-EN GENERAL The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7--
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