TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3567

Size: px
Start display at page:

Download "TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3567"

Transcription

1 SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.7Ω (typ.) High forward transfer admittance: Yfs =.S (typ.) Low leakage current: IDSS = μa (VDS = V) Enhancement mode: Vth =.~. V (VDS = V, ID = ma) Maximum Ratings (Ta = C) Characteristics Symbol Rating Unit Drain-source voltage V DSS V Drain-gate voltage (R GS = kω) V DGR V Gate-source voltage V GSS ± V Drain current DC (Note ) I D. Pulse (t = ms) (Note ) I DP Drain power dissipation (Tc = C) P D W Single pulse avalanche energy (Note ) E AS mj Avalanche current I AR. A Repetitive avalanche energy (Note ) E AR. mj Channel temperature T ch C Storage temperature range T stg -~ C Thermal Characteristics A JEDEC JEITA TOSHIBA : Gate : Drain : Source Weight :.7 g (typ.) SC-7 -UB Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch-c).7 C/W Thermal resistance, channel to ambient R th (ch-a). C/W Note : Ensure that the channel temperature does not exceed. Note : V DD = 9 V, T ch = C(initial), L =. mh, I AR =. A, R G = Ω Note : Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. -7-

2 SK7 Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ± V, V DS = V ± µa Gate-source breakdown voltage V (BR) GSS I G = ± µa, V DS = V ± V Drain cut-off current I DSS V DS = V, V GS = V µa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V V Gate threshold voltage V th V DS = V, I D = ma.. V Drain-source ON resistance R DS (ON) V GS = V, I D =. A.7. Ω Forward transfer admittance Y fs V DS = V, I D =. A.7. S Input capacitance C iss Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz Output capacitance C oss Rise time t r V V GS I D =. A V OUT V Turn-on time t on R L = Ω Switching time Ω Fall time t f V DD V pf ns Turn-off time t off Duty < = %, t w = µs Total gate charge Q g Gate-source charge Q gs V DD V, V GS = V, I D =. A nc Gate-drain charge Q gd Source-Drain Ratings and Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note ) I DR. A Pulse drain reverse current (Note ) I DRP A Forward voltage (diode) V DSF I DR =. A, V GS = V.7 V Reverse recovery time t rr I DR =. A, V GS = V, ns Reverse recovery charge Q rr di DR /dt = A/µs 9. µc Marking K7 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. -7-

3 SK7.... Tc = C I D V DS,.... VGS = V. I D V DS,. Tc = C. VGS = V I D V GS VDS = V Tc = C DRAIN-SOURCE VOLTAGE VDS V DS V GS Tc = ID =. A. GATE-SOURCE VOLTAGE V GS GATE-SOURCE VOLTAGE V GS FORWARD TRANSFER ADMITTANCE Yfs (S) Y fs I D Tc = C VDS = V.. DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) Tc = C R DS (ON) I D VGS = V V. DRAIN CURRENT I D (A) DRAIN CURRENT I D (A) -7-

4 SK7 DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) R DS (ON) Tc VGS = V ID =.A. DRAIN REVERSE CURRENT IDR (A). Tc = C. I DR V DS VGS =, V..... CASE TEMPERATURE Tc ( C) CAPACITANCE V DS V th Tc CAPACITANCE C (pf) Ciss Coss VGS = V Crss f = MHz Tc = C. GATE THRESHOLD VOLTAGE Vth VDS = V ID = ma CASE TEMPERATURE Tc ( C) DRAIN POWER DISSIPATION PD (W) P D Tc DRAIN-SOURCE VOLTAGE VDS DYNAMIC INPUT / OUTPUT CHARACTERISTICS VDS VDD = V VGS ID =. A Tc = C GATE-SOURCE VOLTAGE VGS CASE TEMPERATURE Tc ( C) TOTAL GATE CHARGE Q g (nc) -7-

5 SK7 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/rth (ch-c)..... Duty=... SINGLE PULSE r th t w. μ μ m m m PDM t T Duty = t/t Rth (ch-c) =.7 C/W PULSE WIDTH t w (s) SAFE OPERATING AREA E AS T ch. ID max (PULSED) * ID max (CONTINUOUS) * DC OPERATION Tc = C SINGLE NONREPETITIVE PULSE Tc= CURVES MUST BE DERATED ms * µs * AVALANCHE ENERGY EAS (mj) 7 CHANNEL TEMPERATURE (INITIAL) T ch ( C). LINEARLY WITH INCREASE IN TEMPERATURE. VDSS max V B VDSS V I AR V DD V DS TEST CIRCUIT R G = Ω V DD = 9 V, L =.mh WAVE FORM = BVDSS ΕAS L I BVDSS VDD -7-

6 SK7 RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 9EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. -7-

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3767

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3767 SK77 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK77 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.Ω (typ.) High forward transfer admittance:

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) 2SK3565

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) 2SK3565 SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) SK Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =.Ω (typ.) High forward transfer admittance:

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) 2SK4013

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) 2SK4013 SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) SK Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) =. Ω (typ.) High forward transfer admittance:

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667 SK7 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) SK7 Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.7Ω (typ.) High forward transfer admittance:

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) 2SK3538

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) 2SK3538 SK TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) SK Switching Regulator, DC-DC Converter Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 7 mω (typ.) High forward

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK15J60U

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK15J60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. (typ.) High forward transfer admittance: Y fs

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Unit: mm V gate drive Low drain-source ON resistance:

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) Motor Drive Application Load Swithch Application Chopper Regulator and DC DC Converter Application Unit: mm Low drain-source ON resistance:

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK12A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance:

More information

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON-resistance: R DS (ON)

More information

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj SK TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) SK Switching Regulator Applications Unit: mm Low drain source ON resistance : R DS (ON) =. Ω (typ.) High forward transfer admittance

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF82 TPCF82 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 24 mω (typ.)

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T TKJT TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TKJT Switching Regulator Applications Unit: mm Low drain-source ON resistance: R DS (ON) =.Ω (typ.) High forward transfer admittance:

More information

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type. (P Channel U MOS IV/N Channel U-MOS III) TPC8405. Rating P Channel N Channel

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type. (P Channel U MOS IV/N Channel U-MOS III) TPC8405. Rating P Channel N Channel TPC85 TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type Lithium Ion Secondary Battery Applications Portable Equipment Applications Notebook PC Applications (P Channel U MOS IV/N Channel U-MOS

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC84 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385 2SK2385 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain source ON resistance

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996 DC DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 0.74 Ω (typ.)

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004 TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: R DS (ON) = 9 mω (typ.) High

More information

TPCF8402 F6B TPCF8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)

TPCF8402 F6B TPCF8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) TPCF84 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCF84 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source

More information

TPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C)

TPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C) TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026 TPC26 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC26 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due

More information

TPCS8209 查询 TPCS8209 供应商 TPCS8209. Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools. Maximum Ratings (Ta = 25 C)

TPCS8209 查询 TPCS8209 供应商 TPCS8209. Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools. Maximum Ratings (Ta = 25 C) 查询 TPCS89 供应商 TPCS89 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS89 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Unit: mm Small footprint

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA83 TPCA83 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications.±..27 8.4±. Unit: mm. M A Small

More information

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H TPCA-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications.±..7.±..

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028 TPC TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Unit: mm Small footprint due to small

More information

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8037-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8037-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC7-H TPC7-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8017-H

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8017-H TPC7-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC7-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) High Power Amplifier Application Unit: mm High breakdown voltage: V DSS = 8 V Complementary to SJ68.. MAX. 5.9 MAX. Ф. ±... 9..5. ±..

More information

TPCP8402 TPCP8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)

TPCP8402 TPCP8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8402 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications Unit: mm Low drain-source

More information

TPC8203 TPC8203. Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs. Maximum Ratings (Ta = 25 C) Circuit Configuration

TPC8203 TPC8203. Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs. Maximum Ratings (Ta = 25 C) Circuit Configuration TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSII) TPC8203 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm Small footprint due to small and thin

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU SSMK7FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMK7FU High Speed Switching Applications Analog Switch Applications Unit: mm Suitable for high-density mounting due to compact package

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168. DC I D 200 ma Pulse I DP 800

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168. DC I D 200 ma Pulse I DP 800 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications Unit: mm Excellent switching time: ton = 14 ns (typ.) High

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK6A50D

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK6A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TKAD TKAD Switching Regulator Applications Unit: mm Low drain-source ON-resistance: R DS (ON) =. Ω (typ.) High forward transfer admittance:

More information

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE. DC I D 100 ma Pulse I DP 200

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE. DC I D 100 ma Pulse I DP 200 High Speed Switching Applications Analog Switch Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSMJ6TE Small package Low on-resistance : R on = 8 Ω (max) (@V GS = 4 V) : R on =

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2610

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) 2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSIII) Chopper Regulator, DC DC Converter and Motor Drive Applications Unit: mm Low drain source ON resistance : RDS (ON) = 2.3 Ω (typ.) High

More information

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSMJ7TU High-Speed Switching Applications 4 V drive Low ON-resistance: R on = 225 mω (max) (@V GS = ) R on = 7 mω (max) (@V GS = V) Absolute Maximum

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F High Speed Switching Applications Unit: mm Small package Low on resistance : R on = 200 mω (max) (V GS = 4 V) : R on = 250 mω (max) (V

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiii) 2SK2613

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiii) 2SK2613 SK6 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiii) SK6 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON-resistance: R DS

More information

TPC8116-H TPC8116-H. High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications

TPC8116-H TPC8116-H. High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (Ultra-High-Speed U-MOSIII) High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter

More information

GT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking

GT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking GTQ TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GTQ High Power Switching Applications Motor Control Applications Unit: mm Third-generation IGBT Enhancement mode type High speed: tf

More information

2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)

2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C) SC7 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) SC7 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) =. V (max) (IC = A) High speed switching time:

More information

TPCP8404 TPCP8404. Portable Equipment Applications Motor Drive Applications. Absolute Maximum Ratings (Ta = 25 C) Circuit Configuration

TPCP8404 TPCP8404. Portable Equipment Applications Motor Drive Applications. Absolute Maximum Ratings (Ta = 25 C) Circuit Configuration TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ) TPCP8 Portable Equipment Applications Motor Drive Applications Low drain-source ON-resistance : P Channel R DS (ON) = 38 mω(typ.)

More information

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C) TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications

More information

Rating Q1 Q (Note 4a)

Rating Q1 Q (Note 4a) TPCA Q:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U-MOSⅢ) Q:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U-MOSⅢ) TPCA DC-DC CONVERTER Notebook

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE SSMNFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMNFE High Speed Switching Applications Analog Switching Applications Unit: mm Small package Low ON resistance : R on =. Ω (max) (@V GS

More information

TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel/N-Channel Ultra-High-Speed U-MOSIII) TPC8406-H. Rating P-Channel N-Channel

TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel/N-Channel Ultra-High-Speed U-MOSIII) TPC8406-H. Rating P-Channel N-Channel TPC86-H TOSHIBA Field Effect Transistor Silicon P/N-Channel MOS Type (P-Channel/N-Channel Ultra-High-Speed U-MOSIII) TPC86-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable

More information

2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C)

2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C) TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type Horizontal Deflection Output for HDTV&Digital TV. Unit: mm High voltage: VCBO = V Low saturation voltage: VCE (sat) = V (max) High speed: tf =.

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE. DC I D 100 ma Pulse I DP 200

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE. DC I D 100 ma Pulse I DP 200 SSMNFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSMNFE High Speed Switching Applications Analog Switching Applications.±. Unit: mm Compact package suitable for high-density mounting Low

More information

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7002BFU. DC I D 200 ma Pulse I DP 800

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7002BFU. DC I D 200 ma Pulse I DP 800 TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) SSM6N7BFU High-Speed Switching Applications Analog Switch Applications Small package Low ON-resistance : R DS(ON) =. Ω (max) (@V GS =.

More information

2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C)

2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C) TOSHIBA Transistor Silicon Epitaxial Planar Type 2SC42 Video Output for High Definition VDT High Speed Switching Applications Unit: mm High transition frequency: ft = 4 MHz (typ.) (VCE = V, IC = 7 ma)

More information

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU 2 Input NOR Gate Features High-level output current: I OH /I OL = ±8 ma (min) at = 3.0 High-speed operation: t pd = 2.4 ns (typ.) at

More information

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N7FU High Speed Switching Applications Analog Switch Applications Unit: mm.v drive Low ON-resistance R DS(ON) =.6 Ω (max) (@V GS =. V) R DS(ON)

More information

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE

TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FE SSM6L3FE TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L3FE High-Speed Switching Applications Analog Switch Applications.6±. Unit: mm N-ch:.2-V drive.2±. P-ch:.2-V drive N-ch, P-ch,

More information

TC4013BP,TC4013BF,TC4013BFN

TC4013BP,TC4013BF,TC4013BFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4013BP,TC4013BF,TC4013BFN TC4013B Dual D-Type Flip Flop TC4013B contains two independent circuits of D type flip-flop. The input level applied

More information

TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK

TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX08F/FN/FT/FK TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK Low-Voltage Quad 2-Input AND Gate with 5-V Tolerant Inputs and Outputs The

More information

TC4066BP,TC4066BF,TC4066BFN,TC4066BFT

TC4066BP,TC4066BF,TC4066BFN,TC4066BFT TOSHIBA MOS Digital Integrated ircuit Silicon Monolithic T466BP/BF/BFN/BFT T466BP,T466BF,T466BFN,T466BFT T466B Quad Bilateral Switch T466B contains four independent circuits of bidirectional switches.

More information

TC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK

TC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX244F/FW/FT/FK TC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK Low-Voltage Octal Bus Buffer with 5-V Tolerant Inputs and Outputs The

More information

N-channel TrenchMOS transistor

N-channel TrenchMOS transistor PSMN2-5W FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Very low on-state resistance Fast switching Low thermal resistance g d s V DSS = 5 V I D = 73 A R DS(ON) 2 mω GENERAL DESCRIPTION PINNING

More information

TA7262P,TA7262P(LB),TA7262F

TA7262P,TA7262P(LB),TA7262F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA7262P,TA7262P(LB),TA7262F DC MOTOR DRIVER (3 PHASE Bi DIRECTIONAL) The TA7262P / P (LB) / F are 3 Phase Bi Directional supply voltage control

More information

FEATURES SYMBOL QUICK REFERENCE DATA

FEATURES SYMBOL QUICK REFERENCE DATA FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Low on-state resistance Fast switching d g s V DSS = 2 V I D = 7.6 A R DS(ON) 23 mω GENERAL DESCRIPTION N-channel enhancement mode field-effect power

More information

P-channel enhancement mode MOS transistor

P-channel enhancement mode MOS transistor FEATURES SYMBOL QUICK REFERENCE DATA Very low threshold voltage s V DS = 2 V Fast switching Logic level compatible I D =.2 A Subminiature surface mount g package R DS(ON). Ω (V GS =. V) GENERAL DESCRIPTION

More information

PHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.

PHD110NQ03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1. M3D3 Rev. 1 16 June 24 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold

More information

2SJ280(L), 2SJ280(S)

2SJ280(L), 2SJ280(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable

More information

PHP7NQ60E; PHX7NQ60E

PHP7NQ60E; PHX7NQ60E Rev. 1 2 August 22 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ6E in TO-22AB (SOT78) PHX7NQ6E in isolated TO-22AB. 2. Features Very

More information

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab BUK755-3A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using V DS Drain-source voltage

More information

2SJ332(L), 2SJ332(S)

2SJ332(L), 2SJ332(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from V source Suitable

More information

FEATURES SYMBOL QUICK REFERENCE DATA

FEATURES SYMBOL QUICK REFERENCE DATA FEATURES SYMBOL QUICK REFERENCE DATA Trench technology Low on-state resistance Fast switching Low thermal resistance g d s V DSS = V I D = 8 A R DS(ON) 9 mω GENERAL DESCRIPTION N-channel enhancement mode

More information

TC74VHCT573AF,TC74VHCT573AFW,TC74VHCT573AFT

TC74VHCT573AF,TC74VHCT573AFW,TC74VHCT573AFT TOSHIBA CMOS igital Integrated Circuit Silicon Monolithic TC74HCT573AF/AFW/AFT TC74HCT573AF,TC74HCT573AFW,TC74HCT573AFT Octal -Type Latch with 3-State Output The TC74HCT573A is an advanced high speed CMOS

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab BUK958-55 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench V DS Drain-source voltage

More information

N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET Rev. 2 3 November 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching. M3D88 Rev. 2 19 February 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in

More information

N-channel TrenchMOS standard level FET

N-channel TrenchMOS standard level FET Rev. 2 27 November 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

FEATURES SYMBOL QUICK REFERENCE DATA. V DSS = 55 V Very low on-state resistance Fast switching

FEATURES SYMBOL QUICK REFERENCE DATA. V DSS = 55 V Very low on-state resistance Fast switching PHP37N6LT, PHB37N6LT, PHD37N6LT FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d V DSS = 55 V Very low on-state resistance Fast switching I D = 37 A Stable off-state characteristics High thermal

More information

TC74HC4051AP,TC74HC4051AF,TC74HC4051AFT TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT TC74HC4053AP,TC74HC4053AF,TC74HC4053AFN,TC74HC4053AFT

TC74HC4051AP,TC74HC4051AF,TC74HC4051AFT TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT TC74HC4053AP,TC74HC4053AF,TC74HC4053AFN,TC74HC4053AFT T4H40,40P/F/FT,40P/F/FN/FT TOSHI MOS Digital Integrated ircuit Silicon Monolithic T4H40P,T4H40F,T4H40FT T4H40P,T4H40F,T4H40FT T4H40P,T4H40F,T4H40FN,T4H40FT T4H40P/F/FT 8-hannel nalog Multiplexer/Demulitiplexer

More information

PINNING - SOT223 PIN CONFIGURATION SYMBOL

PINNING - SOT223 PIN CONFIGURATION SYMBOL BUK78-55 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface V DS Drain-source

More information

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

TO220AB & SOT404 PIN CONFIGURATION SYMBOL

TO220AB & SOT404 PIN CONFIGURATION SYMBOL BUK754-55A BUK764-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope V DS Drain-source

More information

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance Rev. 2 3 February 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab

PINNING - TO220AB PIN CONFIGURATION SYMBOL. tab GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope using trench V DS Drain-source voltage 55

More information

PHM21NQ15T. TrenchMOS standard level FET

PHM21NQ15T. TrenchMOS standard level FET M3D879 Rev. 2 11 September 23 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features SOT96 (SO8)

More information

PINNING - SOT223 PIN CONFIGURATION SYMBOL

PINNING - SOT223 PIN CONFIGURATION SYMBOL BUK86A GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. UNIT logic level fieldeffect power transistor in a plastic envelope V DS Drainsource voltage 6 V suitable

More information

2SJ182(L), 2SJ182(S)

2SJ182(L), 2SJ182(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from V source Suitable

More information

TC74HC148AP,TC74HC148AF

TC74HC148AP,TC74HC148AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC148AP,TC74HC148AF 8-to-3 Line Priority Encoder The TC74HC148A is a high speed CMOS 8-to-3 LINE ENCODER fabricated with silicon gate C2MOS

More information

PHP/PHB/PHD55N03LTA. TrenchMOS Logic Level FET

PHP/PHB/PHD55N03LTA. TrenchMOS Logic Level FET Rev. 4 4 September 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP55N3LTA in a SOT78 (TO-22AB)

More information

BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G)

BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G) Rev. 1 3 August 27 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive

More information

PHP/PHB174NQ04LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1.

PHP/PHB174NQ04LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 Description. 1.2 Features. 1. Rev. 1 12 May 24 Product data 1. Product profile 1.1 Description Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Logic level

More information

TC74HC373AP,TC74HC373AF,TC74HC373AFW

TC74HC373AP,TC74HC373AF,TC74HC373AFW TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC373AP/AF/AFW TC74HC373AP,TC74HC373AF,TC74HC373AFW Octal D-Type Latch with 3-State Output The TC74HC373A is a high speed CMOS OCTAL LATCH

More information

PHB108NQ03LT. N-channel TrenchMOS logic level FET

PHB108NQ03LT. N-channel TrenchMOS logic level FET Rev. 4 2 February 29 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

TC4511BP,TC4511BF TC4511BP/BF. TC4511B BCD-to-Seven Segment Latch/Decoder/Driver. Pin Assignment. Display

TC4511BP,TC4511BF TC4511BP/BF. TC4511B BCD-to-Seven Segment Latch/Decoder/Driver. Pin Assignment. Display TC411BP/BF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC411BP,TC411BF TC411B BCD-to-Seven Segment Latch/Decoder/Driver TC411B is decoder which converts the input of BCD code into the 7

More information

PSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses

PSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses Rev. 2 25 June 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO22 package qualified to 175 C. This product is designed and qualified for use in a wide

More information

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH

GP1M003A080H/ GP1M003A080F GP1M003A080HH/ GP1M003A080FH Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings

More information

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PINNING - TO220AB PIN CONFIGURATION SYMBOL GENERAL DESCRIPTION QUICK REFERENCE DATA Nchannel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT fieldeffect power transistor in a plastic envelope. BUK455 A B The device is intended for use in V DS

More information

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Rev. 24 March 29 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package

More information

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1. Rev. 1 17 November 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features

More information

PHP/PHB/PHD45N03LTA. TrenchMOS logic level FET

PHP/PHB/PHD45N03LTA. TrenchMOS logic level FET Rev. 3 2 October 22 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PHP45N3LTA in SOT78 (TO-22AB)

More information

TC74HC74AP,TC74HC74AF,TC74HC74AFN

TC74HC74AP,TC74HC74AF,TC74HC74AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC74AP/AF/AFN TC74HC74AP,TC74HC74AF,TC74HC74AFN Dual D-Type Flip Flop Preset and Clear The TC74HC74A is a high speed CMOS D FLIP FLOP fabricated

More information

PHP110NQ08T. N-channel TrenchMOS standard level FET

PHP110NQ08T. N-channel TrenchMOS standard level FET Rev. 2 12 October 29 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

More information

IRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor

IRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor M3D3 Rev. 4 August Product data. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: in SOT48 (D-PAK).. Features Fast switching

More information

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1. Rev. 2 24 March 25 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features

More information