SSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description

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1 Main Product Characteristics V J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity Description The SSF65R580F utilize the latest techniques to achieve high cell density, low on-resistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable for use in power switching applications and a wide variety of other applications. Maximum Ratings (T A = 25 C unless otherwise noted) Parameter Symbol Value Unit Drain Source Voltage V DS 650 V Gate Source Voltage V GS ±30 V Continuous Drain Current 1) Continuous Drain Current 1) T j=0 C A Pulsed Drain Current 2), pulse 24 A Power Dissipation 3) P D 28 W Single Pulsed Avalanche Energy 5) E AS 150 mj MOSFET dv/dt Ruggedness, V DS=0 480 V dv/dt 50 V/ns Reverse Diode dv/dt, V DS=0 480 V, I SD dv/dt 15 V/ns Operation and Storage Temperature T STG T J -55 to 150 C 1/8

2 Thermal Resistance SSF65R580F Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case R θjc 4.5 C/W Thermal Resistance, Junction-to-Ambient 4) R θja 62.5 C/W Electrical Characteristics (T A=25 C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test condition 650 V GS=0 V, =250 μa Drain-Source Breakdown Voltage BV DSS V V GS=0 V, =250 μa T j=150 C Gate Threshold Voltage V GS(th) V V DS=V GS, =250 μa V GS= V, =4 A Drain-Source On-state Resistance R DS(ON) 1.27 Ω V GS= V, =4 A, Tj=150 C Gate-Source Leakage Current I GSS 0 V GS=30 V na -0 V GS=-30 V Drain-Source Leakage Current SS 1 μa V DS=650 V, V GS=0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input Capacitance C iss 464 pf Output Capacitance C oss 38.3 pf Reverse Transfer Capacitance C rss 1.47 pf Turn-on Delay Time t d(on) 18 ns Rise Time t r 18 ns Turn-off Delay Time t d(off) 27 ns Fall Time t f 22 ns V GS=0 V, V DS=50 V, ƒ=1 MHz V GS= V, V DS=380 V, R G=25 Ω, =8 A 2/8

3 Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total Gate Charge Q g 9.5 nc Gate-Source Charge Q gs 2.7 nc Gate-Drain Charge Q gd 3.8 nc Gate Plateau Voltage V plateau 5.6 V =8 A, V DS=480 V, V GS= V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode Forward Current I S 8 Pulsed Source Current I SP 24 A V GS<V th Diode Forward Voltage V SD 1.3 V I S=8 A, V GS=0 V Reverse Recovery Time t rr 211 ns Reverse Recovery Charge Q rr 1.8 μc Peak Reverse Recovery Current I rrm.5 A I S=8 A, di/dt=0 A/μs Notes 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating, pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a=25 C. 5) V DD=50 V, R G=25 Ω, L=.8 mh, starting T J=25 C. 3/8

4 Test Circuits and Waveforms EAS Test Circuit Gate charge test circuit Switching Time Test Circuit Switching Waveforms 4/8

5 Typical Electrical and Thermal Characteristics SSF65R580F V 8 V V DS =20 V, Drain-source current (A) V 5.5 V V GS = 5 V, Drain current(a) 1 0 C 25 C V DS, Drain-source voltage (V) V GS, Gate-source voltage(v) Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 000 C, Capacitance(pF) C iss C oss C rss V GS, Gate-source voltage(v) V DS, Drain-source voltage (V) Q g, Gate charge(nc) Figure 3, Typ. capacitances Figure 4, Typ. gate charge BV DSS, Drain-source voltage (V) R DS(on), On-resistance( ) T j, Juntion temperature ( C ) T j, Juntion temperature ( C ) Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance 5/8

6 Typical Electrical and Thermal Characteristics 0.7 Is, Source current(a) 1 0 C 25 C R DS(ON), On-resistance( ) V GS =7 V V GS = V V SD, Source-drain voltage(v) , Drain current(a) Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistance 0, Drain-source current (A) , Drain current(a) R DS(ON) Limited us 0 s 1ms ms DC T C, Case temperature ( C) V DS, Drain-source voltage(v) Figure 9, Drain current Figure, Safe operation area 6/8

7 Package Outline Dimensions TO-220F Symbol Dimension In Millimeters Dimension In Inches Min Nom Max Min Nom Max E E E A A A A A5 c REF BSC D Q 9.40REF 0.370REF H1 6.70REF 0.264REF e 2.54REF 0.0REF ФP L REF REF L L ФP ФP ФP ϴ1 3 o 5 o 7 o 3 o 5 o 7 o ϴ2-45 o o - DEP F F F F G G G b b K R - 0.5REF REF - 7/8

8 Ordering and Marking Information Device Marking: SSF65R580F Package (Available) TO-220F Operating Temperature Range C : -55 to 150 C Devices per Unit Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO-220F Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T J = 150 of Max V DSS 168 hours 500 hours 00 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T J = 150 of Max V GSS 168 hours 500 hours 00 hours 3 lots x 77 devices 8/8 Doc.USSSF65R580FxST1.0