MDS9651 Complementary N-P Channel Trench MOSFET
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- Emory Wilkins
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1 General Description The MDS961 uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability (D2) 6(D2) 7(D1) 8(D1) MDS961 Complementary N-P Channel Trench MOSFET 4(G2) 3(S2) 2(G1) 1(S1) Features N-Channel P-Channel V DS = 3V V DS = -3V = = V = = -V = V = -V = 4.V = -4.V Applications Inverters General purpose applications G1 D1 S1 G2 D2 S2 Absolute Maximum Ratings (T a =2 o C unless otherwise noted) Characteristics Symbol N-Ch Rating P-Ch Unit Drain-Source Voltage V DSS 3-3 V Gate-Source Voltage S ± ± V Continuous Drain Current T a=2 o C A T a= o C A Pulsed Drain Current M 3-3 A Power Dissipation (1) T a=2 o C 2 2 T a= o C P D.8.8 Single Pulse Avalanche Energy (2) E AS mj Junction and Storage Temperature Range T J, T stg -~1 W o C Thermal Characteristics Characteristics Device Symbol Rating Unit Thermal Resistance, Junction-to-Ambient(Steady-State) (1) N-Ch R θja 62. Thermal Resistance, Junction-to-Case N-Ch R θjc 6 o C/W Thermal Resistance, Junction-to-Ambient(Steady-State) (1) P-Ch R θja 62. Thermal Resistance, Junction-to-Case P-Ch R θjc 4 1
2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDS961URH -~1 o C SOIC-8 Tape & Reel Halogen Free N-channel Electrical Characteristics (T a =2 o C unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = 2µA, = V Gate Threshold Voltage (th) V DS =, = 2µA V Drain Cut-Off Current SS V DS = 24V, = V - 1. Gate Leakage Current I GSS = ±V, V DS = V µa Drain-Source ON Resistance = V, = 6.9A mω = 4.V, =.A Forward Transconductance g FS V DS = V, = 6.9A S Dynamic Characteristics Total Gate Charge Q g Gate-Source Charge Q gs V DS = 1V, = 6.9A, = V nc Gate-Drain Charge Q gd Input Capacitance C iss Reverse Transfer Capacitance C rss V DS = 1V, = V, f = 1.MHz Output Capacitance C oss Turn-On Delay Time t d(on) Turn-On Rise Time t r = V,V DS = 1V, Turn-Off Delay Time t d(off) R L = 2.2Ω, R GEN = 3Ω Turn-Off Fall Time Drain-Source Body Diode Characteristics t f -. - Source-Drain Diode Forward Voltage V SD I S = 1A, = V V Body Diode Reverse Recovery Time t rr I F = 6.9A, di/dt = A/µs ns Body Diode Reverse Recovery Charge nc Q rr pf ns Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 2 C, L = 1mH, IAS = 6A, VDD = 1V, VGS = V 2
3 P-channel Electrical Characteristics (T a =2 o C unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BV DSS = -2µA, = V Gate Threshold Voltage (th) V DS =, = -2µA V Drain Cut-Off Current SS V DS = -24V, = V Gate Leakage Current I GSS = ±V, V DS = V - - ±.1 µa Drain-Source ON Resistance = -V, = -6.A mω = -4.V, = -.A Forward Transconductance g FS V DS = -V, = -6.A S Dynamic Characteristics Total Gate Charge Q g Gate-Source Charge Q gs V DS = -1V, = -6.A, = -V nc Gate-Drain Charge Q gd Input Capacitance C iss Reverse Transfer Capacitance C rss V DS = -1V, = V, f = 1.MHz Output Capacitance C oss Turn-On Delay Time t d(on) Turn-On Rise Time t r = -V,V DS = -1V, Turn-Off Delay Time t d(off) R L = 2.7Ω, R GEN = 3Ω Turn-Off Fall Time Drain-Source Body Diode Characteristics t f Source-Drain Diode Forward Voltage V SD I S = -1A, = V V Body Diode Reverse Recovery Time t rr I F = -6.A, di/dt = A/µs - - ns Body Diode Reverse Recovery Charge nc Q rr pf ns Note : 1. Surface mounted RF4 board with 2oz. Copper. 2. Starting TJ = 2 C, L = 1mH, IAS = -11A, VDD = -1V, VGS = -V 3
4 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (A), (Normalized) Drain-Source On-Resistance V 6.V.V Fig.1 On-Region Characteristics Notes : 1. = V 2. = 6.9 A 4.V 4.V V DS (Volts) 3.V VGS=3V =V =4.V [mω ] [mω ], Drain-Source On-Resistance =4.V 1 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage T A = 2 =V T A = T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature , Gate to Source Volatge [V] Fig.4 On-Resistance Variation with Gate to Source Voltage *Note ; VDS=V (A) I S (Volts) Fig. Transfer Characteristics V SD [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 4
5 , Gate-Source Voltage [V], Drain Current Note : I = 6.9A D Fig.7 Gate Charge Characteristics Operation in This Area is Limited by R DS(on) Single Pulse R θ ja =62. /W T a =2 Q G, Total Gate Charge [nc] Fig.9 Maximum Safe Operating Area DC s ms V DS, Drain-Source Voltage [V] ms 1 ms us Capacitance [pf] 17 C iss = C gs + C gd (C ds = shorted) 16 1 C iss C oss = C ds + C gd C rss = C gd 14, Drain Current C rss C oss V DS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics Fig. Maximum Drain Current Vs. Case Temperature Notes ; 1. = V 2. f = 1 MHz T a, Case Temperature [ ] 1 Z θ ja (t), Normalized Thermal Response -1-2 D= single pulse Notes : Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ Ja * R θ Ja (t) + T a R Θ JA =62. /W t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve
6 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS, (Normalized) Drain-Source On-Resistance V -6.V Fig.1 On-Region Characteristics Notes : 1. = - V 2. = 6. A -.V -4.V V DS [V] -4.V -3.V -3.V =-V =-4.V [mω ] [mω ], Drain-Source On-Resistance =-4.V =-V Fig.2 On-Resistance Variation with Drain Current and Gate Voltage T A = 2 T A = T J, Junction Temperature [ o C] Fig.3 On-Resistance Variation with Temperature , Gate to Source Volatge [V] Fig.4 On-Resistance Variation with Gate to Source Voltage * Notes ; 1. V DS =-V I S [V] Fig. Transfer Characteristics V SD [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 6
7 -, Drain Current -, Gate-Source Voltage [V] Note : I = -6.A D Fig.7 Gate Charge Characteristics Operation in This Area is Limited by R DS(on) Single Pulse R θ ja =62. /W T a =2 -Q G, Total Gate Charge [nc] DC s ms -V DS, Drain-Source Voltage [V] ms 1 ms us Capacitance [pf] -, Drain Current C rss C oss C iss V DS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics T a, Ambient Temperature [ ] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ; 1. = V 2. f = 1 MHz Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case Temperature 1 Z θ ja (t), Normalized Thermal Response -1-2 D= single pulse Notes : Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z θ Ja * R θ Ja (t) + T a R Θ JA =62. /W t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve 7
8 Physical Dimensions 8 Leads SOIC Dimensions are in millimeters unless otherwise specified 8
9 Worldwide Sales Support Locations U.S.A Sunnyvale Office 787 N. Mary Ave. Sunnyvale CA 948 U.S.A Tel : Fax : americasales@magnachip.com Chicago Office 23 Barrington Road, Suite 33 Hoffman Estates, IL 619 U.S.A Tel : Fax : U.K Knyvett House The Causeway, Staines Middx, TW18 3BA,U.K. Tel : +44 () Fax : +44 () europesales@magnachip.com Japan Tokyo Office Shinbashi 2-chome MT bldg 4F 2-- Shinbashi, Minato-ku Tokyo, -4 Japan Tel : Fax : japansales@magnachip.com Osaka Office 3F, Shin-Osaka MT-2 Bldg Miyahara Yodogawa-Ku Osaka, 32-3 Japan Tel : Fax : osakasales@magnachip.com Taiwan R.O.C 2F, No.61, Chowize Street, Nei Hu Taipei,114 Taiwan R.O.C Tel : Fax : taiwansales@magnachip.com China Hong Kong Office Office 3, 42/F, Office Tower Convention Plaza 1 Harbour Road, Wanchai, Hong Kong Tel : Fax : chinasales@magnachip.com Shenzhen Office Room 183, 18/F International Chamber of Commerce Tower Fuhua 3Road, Futian District ShenZhen, China Tel : Fax : Shanghai Office Ste 192, 1 Huaihai Rd. (C) 21 Shanghai, China Tel : Fax : Korea 891, Daechi-Dong, Kangnam-Gu Seoul, Korea Tel : Fax : ~9 koreasales@magnachip.com DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 9
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
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More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On February the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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