PD A N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8. 1

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1 l l l l l Generation Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S G S2 G2 N-CHNNEL MOSFET 8 D D D2 D2 P-CHNNEL MOSFET Top iew PD -979 IRF7343 HEXFET Power MOSFET N-Ch P-Ch DSS R DS(on).5Ω.5Ω The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 bsolute Maximum Ratings Max. Parameter N-Channel P-Channel Units DS Drain-Source oltage I T = 25 C Continuous Drain Current, I T = 7 C Continuous Drain Current, I DM Pulsed Drain Current P = 25 C Maximum Power Dissipation 2. W P = 7 C Maximum Power Dissipation.3 W E S Single Pulse valanche Energyƒ 72 4 mj I R valanche Current E R Repetitive valanche Energy.2 mj GS Gate-to-Source oltage ± 2 dv/dt Peak Diode Recovery dv/dt /ns T J, T STG Junction and Storage Temperature Range -55 to + 5 C Thermal Resistance Parameter Typ. Max. Units R θj Maximum Junction-to-mbient 62.5 C/W 4//5

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions N-Ch 55 GS =, I D = 25µ (BR)DSS Drain-to-Source Breakdown oltage P-Ch -55 GS =, I D = -25µ N-Ch.59 Reference to 25 C, I D = m (BR)DSS / T J Breakdown oltage Temp. Coefficient / C P-Ch.54 Reference to 25 C, I D = -m R DS(ON) Static Drain-to-Source On-Resistance.43.5 GS =, I D = 4.7 N-Ch GS = 4.5, I D = 3.8 Ω.95.5 GS = -, I D = -3.4 P-Ch.5.7 GS = -4.5, I D = -2.7 N-Ch. DS = GS, I D = 25µ GS(th) Gate Threshold oltage P-Ch -. DS = GS, I D = -25µ g N-Ch 7.9 DS =, I D = 4.5 fs Forward Transconductance S P-Ch 3.3 DS = -, I D = -3. N-Ch 2. DS = 55, GS = I P-Ch -2. DS = -55, GS = DSS Drain-to-Source Leakage Current µ N-Ch 25 DS = 55, GS =, T J = 55 C P-Ch -25 DS = -55, GS =, T J = 55 C I GSS Gate-to-Source Forward Leakage N-P ± n GS = ±2 Q N-Ch g Total Gate Charge N-Channel P-Ch I N-Ch D = 4.5, DS = 44, GS = Q gs Gate-to-Source Charge nc P-Ch P-Channel Q N-Ch 7. gd Gate-to-Drain ("Miller") Charge I P-Ch D = -3., DS = -44, GS = - t N-Ch d(on) Turn-On Delay Time N-Channel P-Ch 4 22 N-Ch DD = 28, I D =., R G = 6.Ω, t r Rise Time R P-Ch 5 D = 28Ω ns t N-Ch d(off) Turn-Off Delay Time P-Channel P-Ch t N-Ch 3 2 DD = -28, I D = -., R G = 6.Ω, f Fall Time R P-Ch D = 28Ω C N-Ch 74 iss Input Capacitance N-Channel P-Ch 69 GS =, DS = 25, ƒ =.MHz C N-Ch 9 pf oss Output Capacitance P-Ch 2 P-Channel C N-Ch 7 rss Reverse Transfer Capacitance P-Ch 86 GS =, DS = -25, ƒ =.MHz Source-Drain Ratings and Characteristics I S I SM SD t rr Q rr Parameter Min. Typ. Max. Units Conditions Continuous Source Current (Body Diode) N-Ch 2. P-Ch -2. Pulsed Source Current (Body Diode) N-Ch 38 P-Ch -27 Diode Forward oltage Reverse Recovery Time Reverse Recovery Charge N-Ch.7.2 T J = 25 C, I S = 2., GS = ƒ P-Ch T J = 25 C, I S = -2., GS = ƒ N-Ch 6 9 ns N-Channel P-Ch 54 8 T J = 25 C, I F =2., di/dt = /µs N-Ch 2 7 nc P-Channel P-Ch 85 3 T J = 25 C, I F = -2., di/dt = /µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 22 ) N-Channel I SD 4.7, di/dt 22/µs, DD (BR)DSS, T J 5 C P-Channel I SD -3.4, di/dt -5/µs, DD (BR)DSS, T J 5 C ƒ N-Channel Starting T J = 25 C, L = 6.5mH R G = 25Ω, I S = 4.7. P-Channel Starting T J = 25 C, L = 2mH R G = 25Ω, I S = Pulse width 3µs; duty cycle 2%. Surface mounted on FR-4 board, t sec. 2

3 N-Channel IRF7343 I D, Drain-to-Source Current () GS GS TOP TOP BOTTOM BOTTOM I D, Drain-to-Source Current () 3.. DS, Drain-to-Source oltage () T J = 5 C. DS, Drain-to-Source oltage () Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current () T J = 5 C I SD, Reverse Drain Current () T J = 5 C DS= GS, Gate-to-Source oltage () GS = SD,Source-to-Drain oltage () Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward oltage 3

4 N-Channel R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = GS = T J, Junction Temperature ( C) R DS (on), Drain-to-Source On Resistance (Ω).2..8 GS = GS = I D, Drain Current () Fig 5. Normalized On-Resistance s. Temperature Fig 6. Typical On-Resistance s. Drain Current RDS(on), Drain-to-Source On Resistance ( Ω ) GS I = 4.7 D, Gate-to-Source oltage () E S, Single Pulse valanche Energy (mj) TOP BOTTOM I D Starting T, Junction Temperature ( J C) Fig 7. Typical On-Resistance s. Gate oltage Fig 8. Maximum valanche Energy s. Drain Current 4

5 N-Channel IRF7343 C, Capacitance (pf) GS =, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED GS, Gate-to-Source oltage () I = D 4.5 DS = 48 DS = 3 DS = 2 C rss DS, Drain-to-Source oltage () Q G, Total Gate Charge (nc) Fig 9. Typical Capacitance s. Drain-to-Source oltage Fig. Typical Gate Charge s. Gate-to-Source oltage Thermal Response (Z thj ) D = PDM. t SINGLE PULSE (THERML RESPONSE) t2 Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thj + T..... t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5

6 P-Channel -I D, Drain-to-Source Current () GS TOP BOTTOM DS, Drain-to-Source oltage () -I D, Drain-to-Source Current () GS TOP BOTTOM T J = 5 C. - DS, Drain-to-Source oltage () Fig 2. Typical Output Characteristics Fig 3. Typical Output Characteristics -I D, Drain-to-Source Current () T J = 5 C -I SD, Reverse Drain Current () T J = 5 C DS= GS, Gate-to-Source oltage () GS = SD,Source-to-Drain oltage () Fig 4. Typical Transfer Characteristics Fig 5. Typical Source-Drain Diode Forward oltage 6

7 P-Channel IRF7343 R DS(on), Drain-to-Source On Resistance (Normalized) 2. I D = GS = T J, Junction Temperature ( C) (Ω) R DS (on), Drain-to-Source On Resistance GS = -4.5 GS = I D, Drain Current () Fig 6. Normalized On-Resistance s. Temperature Fig 7. Typical On-Resistance s. Drain Current RDS(on), Drain-to-Source On Resistance ( Ω ) I D = GS, Gate-to-Source oltage () Fig 8. Typical On-Resistance s. Gate oltage E S, Single Pulse valanche Energy (mj) I D TOP BOTTOM Starting T, Junction Temperature ( J C) Fig 9. Maximum valanche Energy s. Drain Current 7

8 P-Channel C, Capacitance (pf) GS =, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED - GS, Gate-to-Source oltage () I D = -3. DS =-48 DS =-3 DS = DS, Drain-to-Source oltage () Q G, Total Gate Charge (nc) Fig 2. Typical Capacitance s. Drain-to-Source oltage Fig 2. Typical Gate Charge s. Gate-to-Source oltage Thermal Response (Z thj ) D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thj + T..... t, Rectangular Pulse Duration (sec) PDM t t2 Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 8

9 SO-8 Package Outline Dimensions are shown in millimeters (inches) E 6 6X e D B H.25 [.] DIM INCHES MILLIMETERS MIN MX MIN MX b c D E e e H K L y BSIC.27 BSIC.25 BSIC.635 BSIC e C y K x 45 8X b.25 [.] C B. [.4] NOT ES :. DIMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED.5 [.6]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED.25 [.]. 7 DIMENSION IS THE LENGTH OF LED FOR SOLDERING TO SUBST RT E. 8X L [.255] 3X.27 [.5] 8X c F OOT PRINT 8X.72 [.28] 8X.78 [.7] SO-8 Part Marking EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7 DT E CODE (YWW) P = DE S IGNT E S L E D-F RE E PRODUCT (OPTIONL) Y = LST DIGIT OF THE YER WW = WEEK = SSEMBLY SITE CODE LOT CODE PRT NUMBER 9

10 SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. LL DIMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.4 (.488 ) Data and specifications subject to change without notice. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) isit us at for sales contact information. 4/5

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