V DSS R DS(on) max I D 80V GS = 10V 3.6A. 29 P A = 25 C Maximum Power Dissipation 2.0 Linear Derating Factor

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1 PD IRF7380 HEXFET Power MOSFET pplications High frequency DC-DC converters V DSS R DS(on) max I D 80V 73mΩ@ = 0V 3.6 Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See pp. Note N00) Fully Characterized valanche Voltage and Current S G S2 G Top View D D D2 D2 SO-8 bsolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 80 V Gate-to-Source Voltage ± 20 I T = 25 C Continuous Drain 0V 3.6 I T = 00 C Continuous Drain 0V 2.9 I DM Pulsed Drain Current 29 P = 25 C Maximum Power Dissipation 2.0 W Linear Derating Factor 0.02 W/ C dv/dt Peak Diode Recovery dv/dt 2.3 V/ns T J Operating Junction and -55 to + 50 C Storage Temperature Range T STG Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-Drain Lead 20 C/W R θj Junction-to-mbient (PCB Mount) * 50 Notes through are on page /28/02

2 IRF7380 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 80 V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.09 V/ C R DS(on) Static Drain-to-Source On-Resistance 6 73 mω (th) Gate Threshold Voltage V I DSS Drain-to-Source Leakage Current 20 µ 250 I GSS Gate-to-Source Forward Leakage 200 n Gate-to-Source Reverse Leakage -200 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units gfs Forward Transconductance 4.3 S Q g Total Gate Charge 5 23 Q gs Gate-to-Source Charge 2.9 nc Q gd Gate-to-Drain ("Miller") Charge 4.5 t d(on) Turn-On Delay Time 9.0 t r Rise Time 0 t d(off) Turn-Off Delay Time 4 ns t f Fall Time 7 C iss Input Capacitance 660 C oss Output Capacitance 0 C rss Reverse Transfer Capacitance 5 pf C oss Output Capacitance 70 C oss Output Capacitance 72 C oss eff. Effective Output Capacitance 40 valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy 75 mj I R valanche Current 2.2 Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 3.6 (Body Diode) I SM Pulsed Source Current 29 (Body Diode) V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time 50 ns Q rr Reverse Recovery Charge 0 nc Conditions = 0V, I D = 250µ Reference to 25 C, I D = m = 0V, I D = 2.2 V DS =, I D = 250µ V DS = 80V, = 0V V DS = 64V, = 0V, T J = 25 C = 20V = -20V Conditions V DS = 25V, I D = 2.2 I D = 2.2 V DS = 40V = 0V V DD = 40V I D = 2.2 R G = 24Ω = 0V = 0V V DS = 25V ƒ =.0MHz = 0V, V DS =.0V, ƒ =.0MHz = 0V, V DS = 64V, ƒ =.0MHz = 0V, V DS = 0V to 64V Conditions MOSFET symbol showing the G integral reverse S p-n junction diode. T J = 25 C, I S = 2.2, = 0V T J = 25 C, I F = 2.2, V DD = 40V di/dt = 00/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 D

3 I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current () I D, Drain-to-Source Current () IRF VGS TOP 5V 0V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.7V 00 0 VGS TOP 5V 0V 7.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.7V V 3.7V µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 0. 20µs PULSE WIDTH Tj = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = T J = 50 C T J = 25 C V DS = 5V 20µs PULSE WIDTH , Gate-to-Source Voltage (V) RDS(on), Drain-to-Source On Resistance (Normalized) = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 I D, Drain-to-Source Current () C, Capacitance(pF), Gate-to-Source Voltage (V) IRF = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 0 I D = 2. V DS = 64V V DS = 40V V DS = 6V 000 C iss C oss 4 0 C rss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage ISD, Reverse Drain Current () 00 0 T = 25 J C T = 50 J C = 0 V V SD, Source-to-Drain Voltage (V) Tc = 25 C Tj = 50 C Single Pulse OPERTION IN THIS RE LIMITED BY R DS (on) 00µsec msec 0msec V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 IRF V DS R D 3.0 R G D.U.T. + - V DD I D, Drain Current () V Pulse Width µs Duty Factor 0. % Fig 0a. Switching Time Test Circuit T, mbient Temperature ( C) Fig 9. Maximum Drain Current Vs. mbient Temperature V DS 90% 0% t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thj ) 0 D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thj + T t, Rectangular Pulse Duration (sec) P DM t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 R DS (on), Drain-to-Source On Resistance (m Ω) IRF R DS(on), Drain-to -Source On Resistance (m Ω) = 0V I D = I D, Drain Current () , Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. Drain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 2V.2µF 50KΩ.3µF D.U.T. + V - DS V G Q GS Q G Q GD 200 I D 3m I G I D Current Sampling Resistors Charge Fig 4a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)DSS V DS L 5V DRIVER ES, Single Pulse valanche Energy (mj) TOP BOTTOM I S R G 20V tp D.U.T I S 0.0Ω + - V DD Starting T J, Junction Temperature ( C) Fig 5a&b. Unclamped Inductive Test circuit Fig 5c. Maximum valanche Energy and Waveforms Vs. Drain Current 6

7 IRF7380 SO-8 Package Details E 6 6X D e B H 0.25 [.00] DIM INCHES MILLIMETERS MIN MX MIN MX b c D E e e H K L y BSIC.27 BSIC.025 BSIC BSIC e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] 8X L 7 8X c NOTES:. DIMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.5 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.00]. 7 DIMENSION IS THE LENGTH OF LED FOR SOLDERING TO SUBSTRTE. SO-8 Part Marking 6.46 [.255] 3X.27 [.050] FOOTPRINT 8X 0.72 [.028] 8X.78 [.070] EXMPLE: THIS IS N IRF70 (MOSFET) INTERNTIONL RECTIFIER LOGO YWW XXXX F70 DTE CODE (YWW) Y = LST DIGIT OF THE YER WW = WEEK LOT CODE PRT NUMBER 7

8 IRF7380 SO-8 Tape and Reel TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. LL DIMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI-54. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 3mH R G = 25Ω, I S = 2.2. Pulse width 400µs; duty cycle 2% (.566 ) 2.40 (.488 ) When mounted on inch square copper board. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. I SD 2.2, di/dt 220/µs, V DD V (BR)DSS,T J 50 C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information.08/02 8

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor

V DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor P - 95288 HEXFET Power MOSFET pplications High frequency C-C converters Lead-Free l l V SS R S(on) max I 0V 22m:@V GS = V 7.3 Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized