N-Channel 30-V (D-S) MOSFET

Transcription

1 N-Channel 3-V (D-S) MOSFET DTK43 PRODUCT SUMMRY V DS (V) R DS(on) ( ) I D () a, e Q g (Typ).38 at V GS = V nc.44 at V GS = 4.5 V 98 FETURES TrenchFET Power MOSFET % R g and UIS Tested Compliant to RoHS Directive 2/65/EU PPLICTIONS OR-ing Server DC/DC D I 2 PK (TO-262) D 2 PK (TO-263) G G D S S N-Channel MOSFET BSOLUTE MXIMUM RTINGS (, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 3 V Gate-Source Voltage V GS ± 2 98 a, e T C = 7 C 98 e Continuous Drain Current (T J = 75 C) I D 28.8 b, c T = 7 C 27 b, c Pulsed Drain Current I DM 9 valanche Current Pulse I S 36 L =. mh Single Pulse valanche Energy E S 64.8 V 9 a, e Continuous Source-Drain Diode Current I S 3.3 b, c 25 a T C = 7 C 75 Maximum Power Dissipation P D W 3.75 b, c T = 7 C 2.63 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERML RESISTNCE RTINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-mbient b, d t sec R thj 32 4 Maximum Junction-to-Case Steady State R thjc.5.6 C/W Notes: a. Based on. b. Surface mounted on " x " FR4 board. c. t = sec. d. Maximum under steady state conditions is 9 C/W. e. Calculated based on maximum junction temperature. Package limitation current is 9.

2 SPECIFICTIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 µ 3 V V DS Temperature Coefficient V DS /T J 35 I D = 25 µ V GS(th) Temperature Coefficient V GS(th) /T J mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25 µ V Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V ± n V DS = 3 V, V GS = V Zero Gate Voltage Drain Current I DSS V DS = 3 V, V GS = V, T J = 55 C µ On-State Drain Current a I D(on) V DS 5 V, V GS = V 9 V GS = V, I D = 28.8 Drain-Source On-State Resistance a R DS(on) V GS = 4.5 V, I D = Forward Transconductance a g fs V DS = 5 V, I D = S Dynamic b Input Capacitance C iss 265 Output Capacitance C oss V DS = 5 V, V GS = V, f = MHz 725 pf Reverse Transfer Capacitance C rss 97 V DS = 5 V, V GS = V, I D = Total Gate Charge Q g nc Gate-Source Charge Q gs V DS = 5 V, V GS = 4.5 V, I D = Gate-Drain Charge Q gd 29 Gate Resistance R g f = MHz.4 2. Turn-On Delay Time t d(on) 8 27 Rise Time t r V DD = 5 V, R L = Turn-Off Delay Time t d(off) I D 24, V GEN = V, R g = 7 5 Fall Time t f 5 Turn-On Delay Time t d(on) ns Rise Time t r V DD = 5 V, R L = Turn-Off Delay Time t d(off) I D 22.5, V GEN = 4.5 V, R g = Fall Time t f 2 8 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S 9 Pulse Diode Forward Current a I SM 9 Body Diode Voltage V SD I S = V Body Diode Reverse Recovery Time t rr ns Body Diode Reverse Recovery Charge Q rr nc I F = 2, di/dt = /µs, T J = 25 C Reverse Recovery Fall Time t a 27 ns Reverse Recovery Rise Time t b 25 Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. DTK43 Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2

3 TYPICL CHRCTERISTICS (25 C, unless otherwise noted) DTK V GS = V thru 4 V ID - Drain Current () V GS = 2 V V GS = 3 V V DS - Drain-to-Source Voltage (V) I D - Drain Current () T C = - 55 C V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 6.5 (S) Transconductance - G f s T C = - 55 C On-Resistance (Ω) R DS(on) V GS = 4.5 V V GS = V I D - Drain Current () Transconductance I D - Drain Current () R DS(on) vs. Drain Current 5 Capacitance (pf) C C iss Gate-to-Source Voltage (V) I D = 28.8 V DS = 5 V V DS = 24 V 3 C oss - VGS 2 C rss V DS - Drain-to-Source Voltage (V) Capacitance Q g - Total Gate Charge (nc) Gate Charge 3

4 TYPICL CHRCTERISTICS (25 C, unless otherwise noted) DTK43 R D S(on ) - On-Res istance (Normalized ) V GS = V, I D = 28.8 V GS = 4.5 V, I D = 27 () Source Current - IS.. T J = 5 C T J = 25 C T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature V SD - Source-to-Drain Voltage (V) Forward Diode Voltage vs. Temperature I D = 28.8 R DS(on) - On-Resistanc e (Ω) Variance (V) V GS(th ) I D = 25 µ V GS - Gate-to-Source Voltage (V) R DS(on) vs. V GS vs. Temperature T J - Temperature ( C) Threshold Voltage *Limited by r DS (on) - Drain Current () I D. ms ms s s dc. Single Pulse.. V DS - Drain-to-Source Voltage (V) *V GS minimum V GS at which r DS(on) is specified Safe Operating rea, Junction-to-mbient 4

5 TYPICL CHRCTERISTICS (25 C, unless otherwise noted) DTK I D - Drain Current ( ) 2 5 Package Limited Dissipation (W) Power T C - Case Temperature ( C) Current Derating* TC - Case Temperature ( C) Power Derating *The power dissipation P D is based on T J(max) = 75 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 5

6 DTK43 TO-263B (HIGH VOLTGE) (Datum ) 3 4 E 4 L 4 D H 2 C 3 C L2 B B 5 Detail c2 B Gauge plane to 8 L3 L L4 Detail Rotated 9 CW scale 8: H B Seating plane 2 x b2 2 x e 2 x b. M M B Plating 5 b, b3 c ±.4 M B Base metal E D 4 (c) c 5 Lead tip (b, b2) Section B - B and C - C Scale: none E View - 4 MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX D E b E b e 2.54 BSC. BSC b H b L c L c L c L3.25 BSC. BSC D L ECN: S-82-Rev., 5-Sep-8 DWG: 597 Notes. Dimensioning and tolerancing per SME Y4.5M Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outmost extremes of the plastic body at datum. 4. Thermal PD contour optional within dimension E, L, D and E. 5. Dimension b and c apply to base metal only. 6. Datum and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263B.

7 DTK43 RECOMMENDED MINIMUM PDS FOR D 2 PK: 3-Lead.42 (.668).635 (6.29).355 (9.7).45 (3.683).35 (3.429).2 (5.8).5 (.257) Recommended Minimum Pads Dimensions in Inches/(mm)

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