Power MOSFET D 2 PAK (TO-263) G D. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 Gate-Source Voltage V GS ± 20

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1 Power MOSFET DTW2070 PRODUCT SUMMRY V DS (V) 200 R DS(on) ( ) V GS = 0 V 0.09 Q g (Max.) (nc) 70 Q gs (nc) 3 Q gd (nc) 39 Configuration Single FETURES Halogen-free ccording to IEC Definition Surface Mount Low-Profile Through-Hole vailable in Tape and Reel Dynamic dv/dt Rating 0 C Operating Temperature Fast Switching Fully valanche Rated Compliant to RoHS Directive 2002/9/EC I 2 PK (TO-262) D 2 PK (TO-263) D G D G S S N-Channel MOSFET BSOLUTE MXIMUM RTINGS (T C = 2 C, unless otherwise noted) PRMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 Gate-Source Voltage V GS ± 20 V Continuous Drain Current V GS at 0 V T C = 2 C 20 I D T C = 00 C 3 Pulsed Drain Current a, e I DM 72 Linear Derating Factor.0 W/ C Single Pulse valanche Energy b, e E S 80 mj valanche Current a I R 20 Repetiitive valanche Energy a E R 3 mj Maximum Power Dissipation T C = 2 C 3. P D T = 2 C 30 W Peak Diode Recovery dv/dt c, e dv/dt.0 V/ns Operating Junction and Storage Temperature Range T J, T stg - to 0 Soldering Recommendations (Peak Temperature) for 0 s 300 d C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. V DD = 0 V, starting T J = 2 C, L = 2.7 mh, R g = 2, I S = 8 (see fig. 2). c. I SD 20, di/dt 0 /μs, V DD V DS, T J 0 C. d..6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply

2 THERML RESISTNCE RTINGS PRMETER SYMBOL TYP. MX. UNIT Maximum Junction-to-mbient (PCB Mounted, Steady-State) a R thj - 40 C/W Maximum Junction-to-Case (Drain) R thjc -.0 Note a. When mounted on " square PCB (FR-4 or G-0 material). SPECIFICTIONS (T J = 2 C, unless otherwise noted) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 20 μ V V DS Temperature Coefficient V DS /T J Reference to 2 C, I D = m c V/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 20 μ V Gate-Source Leakage I GSS V GS = ± 20 V - - ± 00 n V DS = 200 V, V GS = 0 V Zero Gate Voltage Drain Current I DSS V DS = 60 V, V GS = 0 V, T J = 2 C Drain-Source On-State Resistance R DS(on) V GS = 0 V I D = b Forward Transconductance g fs V DS = 0 V, I D = d S Dynamic Input Capacitance C iss V GS = 0 V, Output Capacitance C oss V DS = 2 V, Reverse Transfer Capacitance C rss f =.0 MHz, see fig. d Total Gate Charge Q g Gate-Source Charge Q gs I V GS = 0 V D = 20, V DS = 60 V, see fig. 6 and 3 b, c Gate-Drain Charge Q gd Turn-On Delay Time t d(on) Rise Time t r V DD = 00 V, I D = 20, - - Turn-Off Delay Time t d(off) R g = 9., R D =.4, see fig. 0 b, c Fall Time t f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I S showing the integral reverse Pulsed Diode Forward Current a G I SM p - n junction diode Body Diode Voltage V SD T J = 2 C, I S = 20, V GS = 0 V b V Body Diode Reverse Recovery Time t rr T J = 2 C, I F = 20, di/dt = 00 /μs b, c ns Body Diode Reverse Recovery Charge Q rr μc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 300 μs; duty cycle 2 %. c. Uses IRF640/SiHF640 data and test conditions. S μ pf nc ns 2

3 TYPICL CHRCTERISTICS (2 C, unless otherwise noted) I D, Drain Current () V GS Top V 0 V 8.0 V 7.0 V 6.0 V. V.0 V Bottom 4. V 4. V I D, Drain Current () C 2 C 20 µs Pulse Width T C = 2 C 0-20 µs Pulse Width V DS = 0 V _0 V DS, Drain-to-Source Voltage (V) 9037_03 V GS, Gate-to-Source Voltage (V) Fig. - Typical Output Characteristics, T J = 2 C Fig. 3 - Typical Transfer Characteristics I D, Drain Current () 9037_ Top Bottom V GS V 0 V 8.0 V 7.0 V 6.0 V. V.0 V 4. V µs Pulse Width T C = 0 C V DS, Drain-to-Source Voltage (V) 4. V R DS(on), Drain-to-Source On Resistance (Normalized) 9037_ I D = 20 V GS = 0 V T J, Junction Temperature ( C) Fig. 2 - Typical Output Characteristics, T J = 7 C Fig. 4 - Normalized On-Resistance vs. Temperature 3

4 Capacitance (pf) 9037_ C iss C oss C rss V GS = 0 V, f = MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd V DS, Drain-to-Source Voltage (V) I SD, Reverse Drain Current () 9037_07 0 C 2 C V GS = 0 V V SD, Source-to-Drain Voltage (V) Fig. - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage V GS, Gate-to-Source Voltage (V) I D = 20 V DS = 00 V V DS = 40 V V DS = 60 V For test circuit see figure I D, Drain Current () Operation in this area limited by R DS(on) T C = 2 C T J = 0 C Single Pulse µs 00 µs ms 0 ms _06 Q G, Total Gate Charge (nc) 9037_08 V DS, Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating rea 4

5 22 V DS R D I D, Drain Current () 9037_ T C, Case Temperature ( C) R g V GS 0 V Pulse width µs Duty factor 0. % D.U.T. Fig. 0a - Switching Time Test Circuit V DS 90 % - V DD Fig. 9 - Maximum Drain Current vs. Case Temperature 0 % V GS t d(on) t r t d(off) t f Fig. 0b - Switching Time Waveforms 0 Thermal Response (Z thjc ) 9037_ Single Pulse (Thermal Response) t, Rectangular Pulse Duration (s) P DM t t 2 Notes:. Duty Factor, D = t /t 2 2. Peak T j = P DM x Z thjc T C Fig. - Maximum Effective Transient Thermal Impedance, Junction-to-Case

6 V t p V DS V DS L Driver R g 20 V t p D.U.T. I S 0.0 Ω - V DD I S Fig. 2a - Unclamped Inductive Test Circuit Fig. 2b - Unclamped Inductive Waveforms E S, Single Pulse Energy (mj) 9037_2c Top Bottom I D V DD = 0 V Starting T J, Junction Temperature ( C) Fig. 2c - Maximum valanche Energy vs. Drain Current Current regulator Same type as D.U.T. 0 V Q G 2 V 0.2 µf 0 kω 0.3 µf Q GS Q GD D.U.T. V - DS V G V GS Charge Fig. 3a - Basic Gate Charge Waveform 3 m Fig. 3b - Gate Charge Test Circuit I G I D Current sampling resistors 6

7 Peak Diode Recovery dv/dt Test Circuit D.U.T. - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period V GS = 0 V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. V DS waveform Diode recovery dv/dt V DD Re-applied voltage Inductor current Body diode forward drop Ripple % I SD Note a. V GS = V for logic level devices Fig. 4 - For N-Channel 7

8 TO-263B (HIGH VOLTGE) (Datum ) 3 4 E 4 L 4 D H 2 C 3 C L2 B B Detail c2 B Gauge plane 0 to 8 L3 L L4 Detail Rotated 90 CW scale 8: H B Seating plane 2 x b2 2 x e 2 x b 0.00 M M B Plating b, b3 c ± M B Base metal E D 4 (c) c Lead tip (b, b2) Section B - B and C - C Scale: none E View - 4 MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX D E b E b e 2.4 BSC 0.00 BSC b H b L c L c L c L3 0.2 BSC 0.00 BSC D L ECN: S-820-Rev., -Sep-08 DWG: 970 Notes. Dimensioning and tolerancing per SME Y4.M Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.00") per side. These dimensions are measured at the outmost extremes of the plastic body at datum. 4. Thermal PD contour optional within dimension E, L, D and E.. Dimension b and c apply to base metal only. 6. Datum and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263B.

9 RECOMMENDED MINIMUM PDS FOR D 2 PK: 3-Lead (0.668) 0.63 (6.29) 0.3 (9.07) 0.4 (3.683) 0.3 (3.429) (.080) 0.00 (.27) Recommended Minimum Pads Dimensions in Inches/(mm)

10 Disclaimer DTW2070 LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Din-Tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Din-Tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Din-Tek s knowledge of typical requirements that are often placed on Din-Tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Din-Tek s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death. Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Din-Tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 20/6/EU of The European Parliament and of the Council of June 8, 20 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/9/EC. We confirm that all the products identified as being compliant to Directive 2002/9/EC conform to Directive 20/6/EU. Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709 standards. Please note that some Din-Tek documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS709 standards.

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