Hyperfast Rectifier, 8 A FRED Pt

Size: px
Start display at page:

Download "Hyperfast Rectifier, 8 A FRED Pt"

Transcription

1 Hyperfast Rectifier, 8 A FRED Pt L TO-0 FullPAK Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 8 A V R 600 V V F at I F.3 V t rr typ. 8 ns T J max. 75 C Package L TO-0 FullPAK Circuit configuration Single FEATURES Hyperfast recovery time Low forward voltage drop 75 C operating junction temperature Low leakage current Fully isolated package (V INS = 500 V RMS ) UL pending Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see /doc?999 DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Repetitive peak reverse voltage V RRM 600 V Average rectified forward current I F(AV) T C = 08 C 8 Non-repetitive peak surge current I FSM 00 A Repetitive peak forward current I FM 6 Operating junction and storage temperatures T J, T Stg -65 to +75 C ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 00 μa I F = 8 A Forward voltage V F I F = 8 A, T J = 50 C V R = V R rated Reverse leakage current I R T J = 50 C, V R = V R rated μa Junction capacitance C T V R = 600 V pf Series inductance L S Measured lead to lead 5 mm from package body nh V Revision: 6-Oct-7 Document Number: 9649 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9000

2 DYNAMIC RECOVERY CHARACTERISTICS (T C = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I F = A, di F /dt = 00 A/μs, V R = 30 V - 8 Reverse recovery time t rr I F = 8 A, di F /dt = 00 A/μs, V R = 30 V T J = 5 C ns T J = 5 C Peak recovery current I RRM I F = 8 A T J = 5 C di F /dt = 00 A/μs T J = 5 C V R = 390 V A T J = 5 C Reverse recovery charge Q rr T J = 5 C nc Reverse recovery time t rr I F = 8 A ns Peak recovery current I RRM T J = 5 C di F /dt = 600 A/μs - - A Reverse recovery charge Q rr V R = 390 V nc THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T J, T Stg C Thermal resistance, junction-to-case R thjc C/W Thermal resistance, junction-to-ambient per leg R thja Typical socket mount Thermal resistance, case-to-heatsink Weight Mounting torque R thcs Mounting surface, flat, smooth, and greased g oz. Marking device Case style L TO-0 FullPAK 8ETH06FP 6.0 (5.0) - (0) kgf cm (lbf in) I F - Instantaneous Forward Current (A) T J = 75 C T J = 50 C T J = 5 C 3 4 V F - Forward Voltage Drop (V) Fig. - Typical Forward Voltage Drop Characteristics I R - Reverse Current (µa) 000 T 00 J = 75 C T J = 50 C 0 T J = 5 C T J = 00 C 0. T J = 5 C V R - Reverse Voltage (V) Fig. - Typical Values of Reverse Current vs. Reverse Voltage Revision: 6-Oct-7 Document Number: 9649 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9000

3 000 C T - Junction Capacitance (pf) 00 T J = 5 C V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 0 D = 0.50 t 0. D = 0.0 t D = 0.0 Single pulse D = 0.05 Notes: (thermal resistance) D = 0.0. Duty factor D = t /t. D = 0.0. Peak T J = P DM x Z thjc + T C t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM Allowable Case Temperature ( C) D = DC D = D = Square wave (D = 0.50) 6 D = 0.0 Rated V R applied D = DC D = 0.50 See note () I F(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 5); Pd REV = inverse power loss = V R x I R ( - D); I R at V R = rated V R Fig. 6 - Forward Power Loss Characteristics Revision: 6-Oct-7 3 Document Number: 9649 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9000 Average Power Loss (W) RMS limit I F(AV) - Average Forward Current (A)

4 60 50 V R = 390 V T J = 5 C T J = 5 C V R = 390 V T J = 5 C T J = 5 C t rr (ns) Q rr (nc) I F = 6 A I F = 8 A 0 I F = 6 A I F = 8 A di F /dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. di F /dt di F /dt (A/µs) Fig. 8 - Typical Stored Charge vs. di F /dt (3) t rr 0 I F t a tb () I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing () I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 6-Oct-7 4 Document Number: 9649 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9000

5 ORDERING INFORMATION TABLE Device code VS- 8 E T H 06 FP -N3 - product - Current rating (8 = 8 A) 3 - E = single 4 - T = TO-0, D PAK (TO-63AB) 5 - H = hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - FP = L TO-0 FullPAK Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION Antistatic plastic tube Dimensions Part marking information LINKS TO RELATED DOCUMENTS /doc?9657 /doc?9539 Revision: 6-Oct-7 5 Document Number: 9649 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9000

6 Outline Dimensions L TO-0 FullPAK DIMENSIONS in millimeters Hole Ø Mold flash bleeding Exposed Cu TYP TYP R 0.7 ( places) R Bottom view 5 ± ± 0.5 Revision: 06-Jul-7 Document Number: 9657 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9000

7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 07 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-7 Document Number: 9000

FEATURES. Heatsink. 1 2 Pin 1 Pin 2

FEATURES. Heatsink. 1 2 Pin 1 Pin 2 Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low

More information

Hyperfast Rectifier, 1 A FRED Pt

Hyperfast Rectifier, 1 A FRED Pt Hyperfast Rectifier, 1 A FRED Pt SMF (DO-219AB) Cathode Anode FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 17 C maximum operating junction temperature Low forward voltage drop Low

More information

FEATURES DESCRIPTION APPLICATIONS

FEATURES DESCRIPTION APPLICATIONS Ultralow V F Hyperfast Rectifier for Discontinuous Mode PFC, 5 FRED Pt 3 2L TO-22C 2 FETURES Hyperfast recovery time Benchmark ultralow forward voltage drop 75 C operating junction temperature Low leakage

More information

Hyperfast Rectifier, 2 x 15 A FRED Pt

Hyperfast Rectifier, 2 x 15 A FRED Pt Hyperfast Rectifier, 2 x 5 FRED Pt 3L TO-220B PRIMRY CHRCTERISTICS Base common cathode 2 2 Common node cathode node 3 Package 3L TO-220B I F(V) 2 x 5 V R 300 V V F at I F 0.85 V t rr typ. See Recovery

More information

Ultrafast Rectifier, 8 A FRED Pt

Ultrafast Rectifier, 8 A FRED Pt Ultrafast Rectifier, 8 FRED Pt 2L TO-220C Base cathode 2 2L TO-220 FULL-PK FETURES State of the art low forward voltage drop Ultrafast recovery time 75 C operating junction temperature Low leakage current

More information

Ultrafast Rectifier, 16 A FRED Pt

Ultrafast Rectifier, 16 A FRED Pt Ultrafast Rectifier, 6 FRED Pt 4 TO-220B 2 3 Base common cathode 4 2 Common node cathode node 3 FETURES Ultrafast recovery time Low forward voltage drop 75 C operating junction temperature Low leakage

More information

Ultrafast Rectifier, 2 x 15 A FRED Pt

Ultrafast Rectifier, 2 x 15 A FRED Pt Ultrafast Rectifier, x 5 FRED Pt TO-47C PRODUCT SUMMRY 3 node Base common cathode 3 Common cathode node Package TO-47C I F(V) x 5 V R 00 V V F at I F 0.85 V t rr typ. See Recovery table T J max. 75 C Diode

More information

Hyperfast Rectifier, 8 A FRED Pt

Hyperfast Rectifier, 8 A FRED Pt Hyperfast Rectifier, 8 FRED Pt Vishay Semiconductors 2L TO-220C Base cathode 2 2L TO-220 FULL-PK FETURES Hyperfast soft recovery time Low forward voltage drop 75 C operating junction temperature Low leakage

More information

Single Phase Fast Recovery Bridge (Power Modules), 61 A

Single Phase Fast Recovery Bridge (Power Modules), 61 A VS-SA6BA60 Single Phase Fast Recovery Bridge (Power Modules), 6 A SOT-227 PRIMARY CHARACTERISTICS V RRM 600 V I O 6 A t rr 70 ns Type Modules - Bridge, Fast Package SOT-227 Circuit configuration Single

More information

Hyperfast Rectifier, 30 A FRED Pt

Hyperfast Rectifier, 30 A FRED Pt VS-30ETH06SPbF, VS-30ETH06-PbF Hyperfast Rectifier, 30 FRED Pt FETURES Hyperfast recovery time Low forward voltage drop 3 D PK (TO-63) ase cathode 3 TO-6 Low leakage current 75 C operating junction temperature

More information

VS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors. FEATURES BENEFITS PRODUCT SUMMARY

VS-HFA08SD60SPbF. HEXFRED Ultrafast Soft Recovery Diode, 8 A. Vishay Semiconductors.  FEATURES BENEFITS PRODUCT SUMMARY HEXFRED Ultrafast Soft Recovery Diode, 8 2, 4 FETURES Ultrafast recovery time Ultrasoft recovery Very low I RRM 3 TO-252 (D-PK) N/C node PRODUCT SUMMRY Package TO-252 (D-PK) I F(V) 8 V R 600 V V F at I

More information

Hyperfast Rectifier, 30 A FRED Pt

Hyperfast Rectifier, 30 A FRED Pt VS-30CTH0S-M3, VS-30CTH0--M3 Hyperfast Rectifier, 30 FRED Pt 3 D PK (TO-63) ase Common Cathode Common Cathode 3 node node VS-30CTH0S-M3 3 PRIMRY CHRCTERISTICS TO-6 ase Common Cathode Common Cathode 3 node

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

Ultrafast Rectifier, 2 x 15 A FRED Pt

Ultrafast Rectifier, 2 x 15 A FRED Pt Ultrafast Rectifier, x 5 FRED Pt ommon cathode, Base FETURES Ultrafast recovery time Low forward voltage drop 75 operating junction temperature 3 TO-47 3L node 3 node Low leakage current Designed and qualified

More information

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline MURD60CT Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 5ns I F(AV) = 6Amp V R = 00V Description/ Applications

More information

Ultrafast Rectifier, 8 A FRED Pt

Ultrafast Rectifier, 8 A FRED Pt Ultrafast Rectifier, 8 FRED Pt TO-63 (D PK) ase cathode 1 3 N/C node VS-8ETU04SHM3 PRODUCT SUMMRY N/C TO-6 1 3 node Package TO-63 (D PK), TO-6 I F(V) 8 V R 400 V V F at I F 0.94 V t rr typ. 35 ns T J max.

More information

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50

More information

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier VP0 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode FEATURES Very low profile - typical height

More information

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at I F = 5.0 A 2 TMBS esmp Series SMPD (TO-263AC) Top View PIN PIN 2 K K Bottom View HEATSINK FEATURES Trench MOS Schottky technology

More information

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High

More information

MUR1620CT MURB1620CT MURB1620CT-1

MUR1620CT MURB1620CT MURB1620CT-1 Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature MUR60CT MURB60CT MURB60CT- t rr = 5ns I F(AV) = 6Amp V R = 00V Description/

More information

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3   High Voltage Trench MOS Barrier Schottky Rectifier V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low

More information

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3   High Voltage Trench MOS Barrier Schottky Rectifier V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- FL Weight: approx. 9. mg Packaging codes/options: 08/K per 7" reel (8 mm tape), 8K/box FEATURES Silicon epitaxial planar diode Fast switching

More information

Ultrafast Soft Recovery Diode, 60 A FRED Pt

Ultrafast Soft Recovery Diode, 60 A FRED Pt Ultrafast Soft Recovery Diode, 60 FRED Pt FETURES Ultrafast recovery time 3 2 TO-247D 2L athode to base 2 3 athode node Low forward voltage drop 75 operating junction temperature Designed and qualified

More information

Small Signal Fast Switching Diode

Small Signal Fast Switching Diode Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial

More information

High Voltage Trench MOS Barrier Schottky Rectifier

High Voltage Trench MOS Barrier Schottky Rectifier High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.50 V at I F = 5 A TO-220AB DESIGN SUPPORT TOOLS Models Available PIN PIN 3 NC A V2000SG PRIMARY CHARACTERISTICS I F(AV) 20 A V RRM 00

More information

Ultrafast Rectifier, 2 x 30 A FRED Pt

Ultrafast Rectifier, 2 x 30 A FRED Pt Ultrafast Rectifier, x 30 FRED Pt TO-47 PRODUT SUMMRY node Base common cathode 3 ommon cathode node Package TO-47 I F(V) x 30 V R 400 V V F at I F 0.9 V t rr typ. 37 ns T J max. 75 Diode variation ommon

More information

Small Signal Fast Switching Diode FEATURES

Small Signal Fast Switching Diode FEATURES Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 DESIGN SUPPORT TOOLS click logo to get started FEATURES Silicon epitaxial planar diode Fast switching

More information

VS-5EWL06FN-M3. Ultralow V F Ultrafast Rectifier, 5 A FRED Pt. Vishay Semiconductors. FEATURES DESCRIPTION / APPLICATIONS

VS-5EWL06FN-M3. Ultralow V F Ultrafast Rectifier, 5 A FRED Pt. Vishay Semiconductors.  FEATURES DESCRIPTION / APPLICATIONS Ultralow V F Ultrafast Rectifier, 5 FRED Pt FETURES TO-252 (D-PK) N/ 2, 4 3 node Ultrafast recovery time, extremely low V F and soft recovery 75 maximum operating junction temperature For PF DM operation

More information

30ETH06 30ETH06S 30ETH06-1

30ETH06 30ETH06S 30ETH06-1 Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Dual Diode Center Tap 30ETH06 30ETH06S 30ETH06- t rr = 8ns typ.

More information

Hyperfast Rectifier, 2 x 15 A FRED Pt

Hyperfast Rectifier, 2 x 15 A FRED Pt Hyperfast Rectifier, x 5 FRED Pt VS-30CTH0SPbF ase Common Cathode Common Cathode 3 node node D PK PRODUCT SUMMRY t rr (maximum) I F(V) V R VS-30CTH0-PbF ase Common Cathode Common Cathode 3 node node TO-6

More information

Ultrafast Rectifier, 30 A FRED Pt

Ultrafast Rectifier, 30 A FRED Pt VS-ETU3006S-M3, VS-ETU3006--M3 Ultrafast Rectifier, 30 FRED Pt FETURES Low forward voltage drop Ultrafast recovery time 3 D PK (TO-63) ase cathode 3 TO-6 75 C operating junction temperature Low leakage

More information

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS

Small Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box

More information

Hyper Fast Rectifier, 8 A FRED Pt

Hyper Fast Rectifier, 8 A FRED Pt Hyper Fast Rectifier, 8 FRED Pt 2 3 DPK (TO-252) N/ 2, 3 node PRIMRY HRTERISTIS Package DPK (TO-252) I F(V) 8 V R 600 V V F at I F.3 V t rr (typ.) 8 ns T J max. 75 ircuit configuration Single die FETURES

More information

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.3 V at I F = 5 A TMBS esmp Series FEATURES Trench MOS Schottky technology Very low profile - typical height of.7

More information

Ultrafast Rectifier, 8 A FRED Pt

Ultrafast Rectifier, 8 A FRED Pt 8 FRED Pt VS-8ETU04SPbF N/C ase cathode 1 3 D PK PRODUCT SUMMRY t rr I F(V) V R node VS-8ETU04-1PbF 1 3 N/C node TO-6 60 ns 8 400 V FETURES Ultrafast recovery time Low forward voltage drop Low leakage

More information

Ultrafast Rectifier, 8 A FRED Pt

Ultrafast Rectifier, 8 A FRED Pt VS-8ETU04S-M3, VS-8ETU04-1-M3 Ultrafast Rectifier, 8 FRED Pt 1 3 D PK (TO-63) ase cathode 1 3 N/C node VS-8ETU04S-M3 1 3 PRIMRY CHRCTERISTICS TO-6 N/C 1 3 node I F(V) 8 V R 400 V V F at I F 0.94 V t rr

More information

Ultrafast Rectifier, 2 x 8 A FRED Pt

Ultrafast Rectifier, 2 x 8 A FRED Pt VS-MUR60CT-M3, VS-MUR60CT--M3 Ultrafast Rectifier, x 8 FRED Pt 3 D PK (TO-63) node ase common cathode 3 Common cathode node VS-MUR60CT-M3 3 node PRIMRY CHRCTERISTICS TO-6 ase common cathode 3 Common cathode

More information

8ETU04 8ETU04S 8ETU04-1

8ETU04 8ETU04S 8ETU04-1 8ETU04 8ETU04S 8ETU04- Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature t rr = 60ns I F(AV) = 8Amp V R = 400V Description/

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

15ETL06PbF 15ETL06FPPbF

15ETL06PbF 15ETL06FPPbF Ultra-low V F Hyperfast Rectifier for Discontinuous Mode PFC Features Benchmark Ultra-low Forward Voltage Drop Hyperfast Recovery Time Low Leakage Current 75 C Operating Junction Temperature Fully Isolated

More information

60EPU04 60APU04. Ultrafast Soft Recovery Diode. t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V. Bulletin PD rev. D 07/01

60EPU04 60APU04. Ultrafast Soft Recovery Diode. t rr = 50ns (typ) I F(AV) = 60Amp V R = 400V. Bulletin PD rev. D 07/01 Bulletin PD-0745 rev. D 07/0 Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Benefits Reduced RFI and EMI Higher Frequency Operation Reduced Snubbing Reduced

More information

Zener Diodes FEATURES APPLICATIONS

Zener Diodes FEATURES APPLICATIONS Zener Diodes SMA (DO-4AC) PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 3.3 to 00 V Test current I ZT.7 to 80 ma V BR 5. to 95 V V WM 4.7 to 90 V P PPM 40 W T J max. 50 C V Z specification

More information

Hyperfast Rectifier, 30 A FRED Pt

Hyperfast Rectifier, 30 A FRED Pt VS-PH3006-F3, VS-PH3006-N3, VS-EPH3006-F3, VS-EPH3006-N3 Hyperfast Rectifier, 30 FRE Pt FETURES Low forward voltage drop Hyperfast soft recovery time 75 operating junction temperature TO-247 Base cathode

More information

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:

More information

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

SPECIFICATIONS (T J = 25 C, unless otherwise noted) N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.). at V GS = V. at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View FEATURES APPLICATIONS Top View D 3 4 8 7 6 5 G Pin

More information

Zener Diodes FEATURES APPLICATIONS. MINIMUM ORDER QUANTITY BZX85-series BZX85-series-TR 5000 (52 mm tape on 13" reel) /box

Zener Diodes FEATURES APPLICATIONS. MINIMUM ORDER QUANTITY BZX85-series BZX85-series-TR 5000 (52 mm tape on 13 reel) /box Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom.. to V Test current I ZT. to 8 ma V Z specification Pulse current Int. construction Single FEATURES Silicon planar power Zener diodes

More information

60EPU04PbF 60APU04PbF

60EPU04PbF 60APU04PbF Bulletin PD-080 08/05 60EPU04PbF 60APU04PbF Ultrafast Soft Recovery Diode Features Ultrafast Recovery 75 C Operating unction Temperature Lead-Free ("PbF" suffix) Benefits Reduced RFI and EMI Higher Frequency

More information

Filter Inductors, High Current, Radial Leaded

Filter Inductors, High Current, Radial Leaded Filter Inductors, High Current, Radial Leaded ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with zero DC current Dielectric: 2500 V RMS between winding and 0.250" [6.35 mm] of insulating covering

More information

Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A

Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A VS-4MT2UHAPbF Half Bridge IGBT MTP (Ultrafast NPT IGBT), 8 A MTP PRIMARY CHARACTERISTICS V CES 2 V V CE(on) typical at V GE = 5 V 3.36 V I C at T C = 25 C 8 A Speed 8 khz to 3 khz Package MTP Circuit configuration

More information

Silicon PIN Photodiode, RoHS Compliant

Silicon PIN Photodiode, RoHS Compliant Silicon PIN Photodiode, RoHS Compliant DESCRIPTION 948642 is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the

More information

Small Signal Zener Diodes, Dual

Small Signal Zener Diodes, Dual Small Signal Zener Diodes, Dual DESIGN SUPPORT TOOLS Models Available PRIMARY CHARACTERISTICS 6 PARAMETER VALUE UNIT range nom.. to V Test current T specification Pulse current Circuit configuration Dual

More information

Surface Mount ESD Capability Rectifier

Surface Mount ESD Capability Rectifier Surface Mount ESD Capability Rectifier MSQPG, MSQPJ esmp Series op View Bottom View MicroSMP (DO-29AD) PRIMARY CHARACERISICS I F(AV).0 A V RRM 400 V, 600 V I FSM 5 A V F at I F =.0 A 0.99 V J max. 75 C

More information

Fast Recovery Diodes (Stud Version) 200 A

Fast Recovery Diodes (Stud Version) 200 A Fast Recovery Diodes (Stud Version) DO-9 (DO-05AB) PRMARY CHARACTERSTCS F(AV) Package DO-9 (DO-05AB) Circuit configuration Single FEATURES High power fast recovery diode series.0 μs to.0 μs recovery time

More information

Small Signal Zener Diodes

Small Signal Zener Diodes Small Signal Zener Diodes DESIGN SUPPORT TOOLS click logo to get started FEATURES Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise

More information

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration

More information

MUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline

MUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline Ultrafast Rectifier MUR300WT Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating unction Temperature BASE COMMON CATHODE 3 ANODE COMMON ANODE CATHODE t rr = 35ns

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992

More information

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A PRIMARY CHARACTERISTICS I F(AV) A V RRM 00 V I FSM 00 A E AS 00 mj V F at I F = A 0.58 V T J max. 50 C High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at

More information

Aluminum Electrolytic Capacitors Power Long Life Snap-In

Aluminum Electrolytic Capacitors Power Long Life Snap-In Aluminum Electrolytic Capacitors Power Long Life Snap-In PUL-SI smaller dimensions 0/0 PLL-SI Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 0 0 Nominal case sizes (Ø D x L in mm) x to x 0 Rated capacitance

More information

Surface Mount ESD Capability Rectifiers

Surface Mount ESD Capability Rectifiers Surface Mount ESD Capability Rectifiers Top View esmp TM Series MicroSMP Bottom View PRIMARY CHARACTERISTICS I F(AV).0 A V RRM 00 V, 200 V, 400 V, 600 V I FSM 20 A V F at I F =.0 A 0.925 V I R µa T J max.

More information

Aluminum Capacitors Power Printed Wiring Style

Aluminum Capacitors Power Printed Wiring Style FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte Large types, cylindrical aluminum case, insulated Provided with keyed polarity Very long useful life: 000 h at 8 C Low ESR, high

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally

More information

Aluminum Electrolytic Capacitors Power Long Life Snap-In

Aluminum Electrolytic Capacitors Power Long Life Snap-In Aluminum Electrolytic Capacitors Power Long Life Snap-In PUL-SI smaller dimensions 0/0 PLL-SI Fig. QUICK REFERENCE DATA DESCRIPTION VALUE 0 0 Nominal case sizes (Ø D x L in mm) x to x 0 Rated capacitance

More information

Small Signal Schottky Diode FlipKY Gen 2

Small Signal Schottky Diode FlipKY Gen 2 Small Signal Schottky Diode FlipKY Gen 2 MECHNICL DT Case: CLP0603-2M X FETURES Schottky diode for high-speed switching Very low dimensions: 0.6 mm x 0.3 mm x 0.29 mm 0.2 forward current Low forward voltage

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering

More information

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105  Optocoupler, Phototransistor Output, no Base Connection MOC80, MOC80, MOC803, MOC80, MOC80 Optocoupler, Phototransistor Output, no Base Connection i79009- DESCRIPTION The MOC80, MOC80, MOC803, MOC80, MOC80 family optocoupler consisting of a gallium arsenide

More information

Double Metallized Polypropylene Film Capacitor Radial AC and Pulse Capacitor

Double Metallized Polypropylene Film Capacitor Radial AC and Pulse Capacitor End of Life September 018 - Alternative Device: MMKP8 Double Metallized Polypropylene Film Capacitor Radial AC and Pulse Capacitor FEATURES Material categorization: for definitions of compliance please

More information

Small Signal Zener Diodes

Small Signal Zener Diodes Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise TZMC-

More information

Aluminum Electrolytic Capacitors Power Standard Miniature Snap-In

Aluminum Electrolytic Capacitors Power Standard Miniature Snap-In Aluminum Electrolytic Capacitors Power Standard Miniature Snap-In Fig. QUICK REFERENCE DATA DESCRIPTION / PUM-SI smaller dimensions 0/0 PSM-SI long life 0 C Note () A 0 V range is available on request

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single

More information

Automotive N-Channel 80 V (D-S) 175 C MOSFET

Automotive N-Channel 80 V (D-S) 175 C MOSFET Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance

More information

N-Channel 8 V (D-S) MOSFET

N-Channel 8 V (D-S) MOSFET Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According

More information

Automotive N-Channel 80 V (D-S) 175 C MOSFET

Automotive N-Channel 80 V (D-S) 175 C MOSFET Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance

More information

N-Channel 150 V (D-S) MOSFET

N-Channel 150 V (D-S) MOSFET N-Channel V (-) MOFET 8 7 O-8 ingle FEATURE ThunderFET power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Marking code: 4848A Top View PROUCT

More information

Two-Line ESD Protection in SOT-23

Two-Line ESD Protection in SOT-23 Two-Line ESD Protection in 2 3 20456 MARKING (example only) YYY = type code (see table below) XX = date code 1 XX YYY XX 20512 20357 1 FEATURES Two-line ESD-protection device ESD-protection acc. IEC 61000-4-2

More information

Aluminum Capacitors Power Standard Miniature Snap-In

Aluminum Capacitors Power Standard Miniature Snap-In Aluminum Capacitors Power Standard Miniature Snap-In Fig. QUICK REFERENCE DATA DESCRIPTION / PUM-SI smaller dimensions 0/0 PSM-SI long life 0 C Note () A 0 V range is available on request 0/0 PLL-SI VALUE

More information

4-Line BUS-Port ESD-Protection

4-Line BUS-Port ESD-Protection 4-Line BUS-Port ESD-Protection 2397 6 5 4 1 2 3 MARKING (example only) Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 2453 1 XX YY 211 FEATURES Ultra compact LLP75-6L package 4-line

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View

More information

Aluminum Electrolytic Capacitors Axial High Temperature High Voltage for E.L.B.

Aluminum Electrolytic Capacitors Axial High Temperature High Voltage for E.L.B. Aluminum Electrolytic Capacitors Axial High Temperature High Voltage for E.L.B. 04-043 ASH standard 04/043 AHH-ELB 550 V/4 h Fig. 85 C 04/043 AMH-ELB 550 V/4 h FEATURES Useful life: 0 000 h at 05 C Stable

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode with enhanced sensitivity for visible light. It is a low profile surface-mount device (SMD) including the chip with

More information

Optocoupler, Phototransistor Output, no Base Connection

Optocoupler, Phototransistor Output, no Base Connection Optocoupler, Phototransistor Output, no Base Connection FEATURES A C NC 1 2 3 6 5 4 NC C E Isolation test voltage, 5 V RMS No base terminal connection for improved common mode interface immunity Long term

More information

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life

Aluminum Electrolytic Capacitors Axial Miniature, Long-Life Aluminum Electrolytic Capacitors Axial Miniature, Long-Life 38 AML 0 ASM smaller dimensions Fig. QUICK REFERENCE DATA DESCRIPTION Nominal case sizes (Ø D x L in mm) 6.3 x.7 to 0 x 5 VALUE 0 x 30 to x 38

More information

Silicon PIN Photodiode

Silicon PIN Photodiode Silicon PIN Photodiode DESCRIPTION VBPW34S VBPW34SR 21733 VBPW34S and VBPW34SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5 mm 2 sensitive

More information

Small Signal Zener Diodes

Small Signal Zener Diodes Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V Test current I ZT 2.5; 5 ma V Z specification Pulse current Int. construction Single FEATURES Saving space

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY

More information

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 5 A

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = V at I F = 5 A New Product V3000C, VF3000C, VB3000C & VI3000C Dual HighVoltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.56 V at I F = 5 A TMBS TO0AB ITO0AB 3 3 V3000C VF3000C CASE TO63AB TO6AA 3 VB3000C

More information

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance

Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance Aluminum Electrolytic Capacitors Radial Miniature, Low Impedance 36 RVI miniaturize FEATURES Very long useful life: 4000 h to 0 000 h at 05 C, high stability, high reliability Very low impedance and low

More information

Power Resistor Thick Film Technology

Power Resistor Thick Film Technology Power Resistor Thick Film Technology LTO series are the extension of RTO types. We used the direct ceramic mounting design (no metal tab) of our RCH power resistors applied to semiconductor packages. FEATURES

More information

Silicon PIN Photodiode

Silicon PIN Photodiode VEMD550CF Silicon PIN Photodiode DESCRIPTION VEMD550CF is a high speed and high sensitive PIN photodiode. It is a low profile surface-mount device (SMD) including the chip with a 7.5 mm 2 sensitive area

More information

Small Signal Zener Diodes

Small Signal Zener Diodes Small Signal Zener Diodes FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise AEC-Q qualified Compliant to RoHS Directive 22/95/EC and in accordance to WEEE

More information

SMD Aluminum Solid Capacitors with Conductive Polymer

SMD Aluminum Solid Capacitors with Conductive Polymer SMD Aluminum Solid Capacitors with Conductive Polymer FEATURES New OS-CON series provides improved characteristics with up to 25 C temperature capability and 35 V maximum voltage rating in a SMD package

More information

Small Signal Zener Diodes, Dual

Small Signal Zener Diodes, Dual DZ-G Series Small Signal Zener Diodes, Dual PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT range nom.. to Test current T specification Pulse current Int. construction Dual common cathode FEATURES Dual silicon

More information