VS-5EWL06FN-M3. Ultralow V F Ultrafast Rectifier, 5 A FRED Pt. Vishay Semiconductors. FEATURES DESCRIPTION / APPLICATIONS

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1 Ultralow V F Ultrafast Rectifier, 5 FRED Pt FETURES TO-252 (D-PK) N/ 2, 4 3 node Ultrafast recovery time, extremely low V F and soft recovery 75 maximum operating junction temperature For PF DM operation Low leakage current Meets MSL level, per J-STD-2, LF maximum peak of 26 Material categorization: for definitions of compliance please see PRODUT SUMMRY Package TO-252 (D-PK) I F(V) 5 V R 6 V V F at I F.85 V t rr (typ.) 59 ns T J max. 75 Diode variation Single die DESRIPTION / PPLITIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PF boost stage in the /D section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. BSOLUTE MXIMUM RTINGS PRMETER SYMBOL TEST ONDITIONS VLUES UNITS Peak repetitive reverse voltage V RRM 6 V verage rectified forward current I F(V) T = 59 5 Non-repetitive peak surge current I FSM T J = 25 8 Peak repetitive forward current I FM T = 59, f = 2 khz, d = 5 % Operating junction and storage temperatures T J, T Stg -65 to +75 ELETRIL SPEIFITIONS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS TYP. MX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μ I F = Forward voltage V F I F = 5, T J = V R = V R rated Reverse leakage current I R T J = 5, V R = V R rated μ Junction capacitance T V R = 6 V pf Series inductance L S Measured lead to lead 5 mm from package body nh V Revision: 4-Oct-6 Document Number: 9325 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

2 DYNMI REOVERY HRTERISTIS (T J = 25 unless otherwise specified) PRMETER SYMBOL TEST ONDITIONS TYP. MX. UNITS I F =, di F /dt = /μs, V R = 3 V Reverse recovery time t rr I F =, di F /dt = 5 /μs, V R = 3 V T J = ns T J = Peak recovery current I RRM T J = 25 I F = di F /dt = 2 /μs T J = 25 V R = 39 V T J = Reverse recovery charge Q rr T J = n THERML - MEHNIL SPEIFITIONS PRMETER SYMBOL TEST ONDITIONS TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg Thermal resistance, junction to case per leg R thj /W pproximate weight.3 g. oz. Marking device ase style TO-252 (D-PK) 5EWL6FN I F - Instantaneous Forward urrent () T J = 75 T J = 25 T J = I R - Reverse urrent (μ).. T J = 75 T J = 5 T J = 25 T J = T J = 75 T J = V F - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Typical Forward Voltage Drop haracteristics Fig. 2 - Typical Values of Reverse urrent vs. Reverse Voltage Revision: 4-Oct-6 2 Document Number: 9325 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

3 T - Junction apacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction apacitance vs. Reverse Voltage Z thj - Thermal Impedance ( /W) Single pulse (thermal resistance) D =.5 D =.2 D =. D =.5 D =.2 D = t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thj haracteristics 8 7 llowable ase Temperature ( ) Square wave (D =.5) Rated V R applied See note () D verage Power Loss (W) D D =. D =.2 D =.5 D =. D =.2 D =.5 RMS limit I F(V) - verage Forward urrent () I F(V) - verage Forward urrent () Fig. 5 - Maximum llowable ase Temperature vs. verage Forward urrent Fig. 6 - Forward Power Loss haracteristics Revision: 4-Oct-6 3 Document Number: 9325 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

4 3 6 t rr (ns) , T J = 25 5, T J = 25 Q rr (n) 4 2 5, T J = 25 5, T J = di F /dt (/μs) Fig. 7 - Typical Reverse Recovery Time vs. di F /dt Note () Formula used: T = T J - (Pd + Pd REV ) x R thj ; Pd = forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = inverse power loss = V R x I R ( - D); I R at V R = rated V R 6 di F /dt (/μs) Fig. 8 - Typical Stored harge vs. di F /dt V R = 2 V L = 7 μh. Ω di F /dt adjust G D IRFP25 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test ircuit (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 4-Oct-6 4 Document Number: 9325 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

5 ORDERING INFORMTION TBLE Device code VS- 5 E W L 6 FN TRL -M product 2 - urrent rating (5 = 5 ) 3 - ircuit configuration: E = single diode 4 - Package identifier: W = D-PK 5 - L = low V F, fast recovery 6 - Voltage rating (6 = 6 V) 7 - FN = TO None = tube TR = tape and reel TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PKGING DESRIPTION 75 3 ntistatic plastic tube VS-5EWL6FNTR-M " diameter reel VS-5EWL6FNTRL-M " diameter reel VS-5EWL6FNTRR-M " diameter reel Dimensions Part marking information Packaging information SPIE model LINKS TO RELTED DOUMENTS Revision: 4-Oct-6 5 Document Number: 9325 RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

6 D-PK (TO-252) M Outline Dimensions DIMENSIONS in millimeters and inches E (5) Pad layout Ø 2 b3 (3). M B L3 (3) 4 Ø B D (5) 2 3 L4 c2 Seating plane H D 4 E (2.4).49 (.4).265 (6.74).245 (6.23) (2) L5 b2 2 x e b. M B Lead tip Detail Detail Rotated 9 W Scale: 2: Gauge plane L2 Ø c (L) L H (7) Seating plane.6 (.524).93 (2.38).85 (2.8).89 (2.28) SYMBOL MILLIMETERS INHES MILLIMETERS INHES NOTES SYMBOL MX. MX. MX. MX. NOTES e 2.29 BS.9 BS H b L b L 2.74 BS.8 REF. b L2.5 BS.2 BS c L c L D L D Ø E Ø 5 5 E Ø Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Lead dimension uncontrolled in L5 (3) Dimension D, E, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section - dimension apply to the flat section of the lead between.3 and.25 mm (.5 and.") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b and c applied to base metal only (7) Datum and B to be determined at datum plane H (8) Outline conforms to JEDE outline TO-252 Revision: 24-Jun-6 Document Number: RE SUBJET TO SPEIFI DISLIMERS, SET FORTH T

7 Legal Disclaimer Notice Vishay Disclaimer LL PRODUT, PRODUT SPEIFITIONS ND DT RE SUBJET TO HNGE WITHOUT NOTIE TO IMPROVE RELIBILITY, FUNTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. ustomers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHY INTERTEHNOLOGY, IN. LL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9

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