J/SST111 Series. N-Channel JFETs. Vishay Siliconix J111 SST111 J112 SST112 J113 SST113

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1 N-Channel JFETs J SST J SST J SST Part Number V GS(off) (V) r DS(on) Max ( ) I D(off) Typ (pa) t ON Typ (ns) J/SST to 5 4 J/SST to J/SST 5 4 Low On-Resistance: < Fast Switching t ON : 4 ns Low Leakage: 5 pa Low Capacitance: pf Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible Off-Error, Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally On Switches Current Limiters The J/SST series consists of all-purpose analog switches designed to support a wide range of applications. The J/SST are useful in a high-gain amplifier mode. For similar products in TO-6AA(TO-8) packaging, see the N/PN/SST49 series, N4856A/4857A/4858A, and N5564/5565/5566 (duals) data sheets. The J series, TO-6AA (TO-9) plastic package, provides low cost, while the SST series, TO6 (SOT-) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-6AA (TO-9) TO-6 (SOT-) D D S S G G Top View J J J Top View SST (C)* SST (C)* SST (C)* *Marking Code for TO-6 Gate-Drain, Gate-Source Voltage V Gate Current ma Lead Temperature ( / 6 from case for seconds) C Storage Temperature to 5 C Operating Junction Temperature to 5 C For applications information see AN5. Power Dissipation a (TO-6) (TO-6AA) Notes a. Derate.8 mw/ C above 5 C 5 mw mw Document Number: 7 S-8 Rev. E, 4-Jun- 7-

2 Limits J/SST J/SST J/SST Parameter Symbol Test Conditions Typ a Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V (BR)GSS I G = A, V DS = V Gate-Source Cutoff Voltage V GS(off) V DS = 5 V, I D = A 5 V Saturation Drain Current b I DSS V DS = 5 V, V GS = V 5 ma Gate Reverse Current I GSS T A = 5 C V GS = 5 V, V DS = V.5 na Gate Operating Current I G V DG = 5 V, I D = ma 5 pa Drain Cutoff Current I D(off) T A = 5 C V DS = 5 V, V GS = V.5 na Drain-Source On-Resistance r DS(on) V GS = V, V DS =. V 5 Gate-Source Forward Voltage V GS(F) I G = ma, V DS = V.7 V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance g fs g os V DS = V, I D = ma f = khz 6 ms 5 S Drain-Source On-Resistance r ds(on) V GS = V, I D = ma f = khz 5 Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance C iss C rss V DS = V, V GS = V f = MHz pf Equivalent Input Noise Voltage e n V DG = V, I D = ma f = khz nv Hz Switching Turn-On Time Turn-Off Time t d(on) t r VDD V = V, V GS(H) = V t d(off) See Switching Circuit 6 t f 5 ns Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NCB b. Pulse test: PW s duty cycle %. 7- Document Number: 7 S-8 Rev. E, 4-Jun-

3 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage On-Resistance vs. Drain Current r DS(on) Drain-Source On-Resistance ( Ω ) r I D = ma, V GS = I V DS = V, V GS = r DS I DSS I DSS Saturation Drain Current (ma) r DS(on) Drain-Source On-Resistance ( Ω ) T A = 5 C V GS(off) = V 4 V 8 V V GS(off) Gate-Source Cutoff Voltage (V) r DS(on) Drain-Source On-Resistance ( Ω ) On-Resistance vs. Temperature I D = ma r DS changes X.7%/ C V GS(off) = V 4 V 8 V Turn-On Switching Switching Time (ns) 5 4 t I D = ma t r approximately independent of I D V DD = 5 V, R G = 5 Ω V GS(L) = V t r t I D = ma T A Temperature ( _C) V GS(off) Gate-Source Cutoff Voltage (V) Turn-Off Switching Capacitance vs. Gate-Source Voltage t d(off) independent of device V GS(off) V DD = 5 V, V GS(L) = V f = MHz 4 4 Switching Time (ns) 8 t d(off) t V GS(off) = V Capacitance (pf) 8 C V DS = V 6 t V GS(off) = 8 V 6 C V DS = V V GS Gate-Source Voltage (V) Document Number: 7 S-8 Rev. E, 4-Jun- 7-

4 en Noise Voltage nv / Hz Noise Voltage vs. Frequency V DS = V I D = ma I D = ma g fs Forward Transconductance Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 5 g fs and g V DS = V 5 V GS = V, f = khz g fs g os 5 gos Output Conductance k k k f Frequency (Hz) V GS(off) Gate-Source Cutoff Voltage (V) na na Gate Leakage Current I 5 C T A = 5 C I D = ma Common-Gate Input Admittance V DG = V I D = ma T A = 5 C g ig I G Gate Leakage pa pa T A = 5 C ma ma ma I 5 C b ig pa. pa V DG Drain-Gate Voltage (V). 5 Common-Gate Forward Admittance V DG = V I D = ma T A = 5 C Common-Gate Reverse Admittance V DG = V I D = ma T A = 5 C g fg b fg. b rg g fg +g rg. g rg Document Number: 7 S-8 Rev. E, 4-Jun-

5 Common-Gate Output Admittance V DG = V I D = ma T A = 5 C V GS(off) = 4 V Output Characteristics b og g og V GS = V V DS Drain-Source Voltage (V) Output Characteristics Transfer Characteristics V GS(off) = 4 V V GS(off) = 4 V V DS = V V GS = V T A = 55 C 5 C 5 C 4 5 V DS Drain-Source Voltage (V) V GS Gate-Source Voltage (V) V DD J/SST J/SST J/SST R L V GS(L) V 7 V 5 V R L * OUT I D(on) ma 6 ma ma V GS(H) *Non-inductive V GS(L) k 5 Rise Time < ns Fall Time < ns Pulse Width ns PRF MHz Rise Time.4 ns Input Resistance M Input Capacitance.5 pf V GS Scope 5 Document Number: 7 S-8 Rev. E, 4-Jun- 7-5

6 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8

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