Optocoupler, Phototransistor Output, with Base Connection

Transcription

1 Vishay Semiconductors Optocoupler, Phototransistor Output, 2842 DESCRIPTION i Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS Underwriters laboratory file no. E52744 DIN EN (VDE 0884) BSI: EN 60065:2002, EN 60950:2000 FIMKO; EN 60065, EN 60335, EN certificate no A C NC 2 3 V D E B C E FEATURES Isolation test voltage 5000 V RMS Interfaces with common logic families Input-output coupling capacitance < pf Industry standard dual-in-line 6 pin package Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC APPLICATIONS AC mains detection Reed relay driving Switch mode power supply feedback Telephone ring detection Logic ground isolation Logic coupling with high frequency noise rejection ORDER INFORMATION PART 4N35 4N36 4N37 REMARKS CTR > 00 %, DIP-6 CTR > 00 %, DIP-6 CTR > 00 %, DIP-6 ABSOLUTE MAXIMUM RATINGS () PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current 50 ma Surge current t 0 µs SM A Power dissipation P diss 70 mw OUTPUT Collector emitter breakdown voltage O 70 V Emitter base breakdown voltage V EBO 7 V Collector current I C 50 ma t ms I C 00 ma Power dissipation P diss 70 mw COUPLER Isolation test voltage V ISO 5000 V RMS Creepage 7 mm Clearance 7 mm Isolation thickness between emitter and detector 0.4 mm Document Number: 88 For technical questions, contact: optocoupleranswers@vishay.com Rev.., 26-Oct-09 53

2 Vishay Semiconductors Optocoupler, Phototransistor Output, ABSOLUTE MAXIMUM RATINGS () PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Comparative tracking index DIN IEC 2/VDE 0303, part 75 Isolation resistance V IO = 500 V, T amb R IO 0 2 Ω V IO = 500 V, T amb = 00 C R IO 0 Ω Storage temperature T stg - 55 to + 50 C Operating temperature T amb - 55 to + 00 C Junction temperature T j 00 C max.0 s dip soldering: Soldering temperature (2) distance to seating plane T sld 260 C.5 mm Notes () T amb, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering condditions for through hole devices (DIP). ELECTRICAL CHARACTERISTICS () PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Junction capacitance V R = 0 V, f = MHz C j 50 pf Forward voltage (2) = 0 ma V F.3.5 V = 0 ma, T amb = - 55 C V F V Reverse current (2) V R = 6 V I R 0. 0 µa Capacitance V R = 0 V, f = MHz C O 25 pf OUTPUT Collector emitter breakdown voltage (2) I C = ma 4N35 BO 30 V 4N36 BO 30 V 4N37 BO 30 V Emitter collector breakdown voltage (2) I E = 00 µa BV ECO 7 V OUTPUT Collector base breakdown voltage (2) I C = 00 µa, I B = µa 4N35 BV CBO 70 V 4N36 BV CBO 70 V 4N37 BV CBO 70 V = 0 V, = 0 4N35 I CEO 5 50 na 4N36 I CEO 5 50 na Collector emitter leakage current (2) = 0 V, = 0 4N37 I CEO 5 50 na 4N35 I CEO 500 µa T amb = 00 C = 30 V, = 0, 4N36 I CEO 500 µa 4N37 I CEO 500 µa Collector emitter capacitance = 0 C CE 6 pf COUPLER Resistance, input output (2) V IO = 500 V R IO 0 Ω Capacitance, input output f = MHz C IO 0.6 pf Notes () T amb, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. (2) Indicates JEDEC registered value. For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev.., 26-Oct-09

3 Optocoupler, Phototransistor Output, Vishay Semiconductors CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT DC current transfer ratio () Note () Indicates JEDEC registered values. Note () Indicates JEDEC registered values. TYPICAL CHARACTERISTICS T amb, unless otherwise specied = 0 V, = 0 ma = 0 V, = 0 ma, = - 55 C to + 00 C 4N35 CTR DC 00 % 4N36 CTR DC 00 % 4N37 CTR DC 00 % 4N35 CTR DC % 4N36 CTR DC % 4N37 CTR DC % SWITCHING CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Switching time () V CC = 0 V, I C = 2 ma, R L = 00 Ω t on, t off 0 µs V F -Forward Voltage (V) = - 55 C = 85 C N CTR - Normalized CTR.5.0 = 0 V, = 0 ma, = 50 C i4n25_0 0 - Forward Current (ma) i4n25_ Fig. - Forward Voltage vs. Forward Current Fig. 3 - Normalized Non-Saturated and Saturated CTR vs. - Normalized CTR.5 = 0 V, = 0 ma, i4n25_02 Fig. 2 - Normalized Non-Saturated and Saturated CTR vs. - Normalized CTR i4n25_04 = 0 V, = 0 ma, = 0 00 Fig. 4 - Normalized Non-Saturated and Saturated CTR vs. Document Number: 88 For technical questions, contact: optocoupleranswers@vishay.com Rev.., 26-Oct-09 55

4 Vishay Semiconductors Optocoupler, Phototransistor Output, - Normalized CTR i4n25_05 = 0 V, = 0 ma, = 85 C 0 00 Fig. 5 - Normalized Non-Saturated and Saturated CTR vs. cb - Normalized CTR cb.5.0 V CB = 9.3 V, = 0 ma, 50 C i4n25_08 Fig. 8 - Normalized CTR cb vs. and Temperature I CE - Collector Current (ma) i4n25_06 50 C 85 C Normalized Photocurrent 0 = 0 ma, 0. Nib, = - 20 C Nib, = 20 C Nib, = 50 C Nib, = i4n25_09 Fig. 6 - Collector Emitter Current vs. Temperature and Fig. 9 - Normalized Photocurrent vs. and Temperature I CEO - Collector Emitter (na) Typical = 0 V Nh FE - Normalized h FE C I B = 20 µa, = 0 V, i4n25_ T amb - Ambient Temperature ( C) i4n25_0 I b - Base Current (µa) Fig. 7 - Collector Emitter Leakage Current vs. Temperature Fig. 0 - Normalized Non-Saturated h FE vs. Base Current and Temperature For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev.., 26-Oct-09

5 Optocoupler, Phototransistor Output, Vishay Semiconductors Nh FE(sat) - Normalized Saturated h FE C 50 C = 0 V, I b = 20 µa i4n25_ I b - Base Current (µa) = 0 ma i4n25_4 f = 0 khz DF = 50 % V CC = 5 V R L V O Fig. - Normalized h FE vs. Base Current and Temperature Fig. 4 - Switching Schematic t PLH - Propagation Delay (µs) = 0 ma, V CC = 5.0 V, V th =.5 V t PHL t PLH i4n25_2 R L - Collector Load Resistor (kω) Fig. 2 - Propagation Delay vs. Collector Load Resistor t PHL - Propagation Delay (µs) t D V O t R t PLH V TH =.5 V t PHL t S t F i4n25_3 Fig. 3 - Switching Timing Document Number: 88 For technical questions, contact: optocoupleranswers@vishay.com Rev.., 26-Oct-09 57

6 Vishay Semiconductors Optocoupler, Phototransistor Output, PACKAGE DIMENSIONS in millimeters 7.2 ± typ. 6.5 ± ± ± 0.3 ± 0..2 ± ± ± to 9.5 typ. 477_2 2 3 PACKAGE MARKING 4N35 V YWW For technical questions, contact: optocoupleranswers@vishay.com Document Number: Rev.., 26-Oct-09

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