Improved Quad CMOS Analog Switches

Transcription

1 Improved Quad CMOS Analog Switches DG211B, DG212B DESCRIPTION The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG211B and DG212B can handle up to ± 22 V, and have an improved continuous current rating of 30 ma. An epitaxial layer prevents latchup. All devices feature true bi-directional performance in the on condition, and will block signals to the supply levels in the off condition. The DG211B is a normally closed switch and the DG212B is a normally open switch. (see Truth Table.) FEATURES ± 22 V supply voltage rating TTL and CMOS compatible logic Low on-resistance - R DS(on) : Low leakage - I D(on) : 20 pa Single supply operation possible Extended temperature range Fast switching - t ON : 120 ns Low charge injection - Q: 1 pc BENEFITS Wide analog signal range Simple logic interface Higher accuracy Minimum transients Reduced power consumption Superior to DG211, DG212 Space savings (TSSOP) APPLICATIONS Industrial instrumentation Test equipment Communications systems Disk drives Computer peripherals Portable instruments Sample-and-hold circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG211B Dual-In-Line, SOIC and TSSOP IN IN 2 D D 2 S S V+ GND 5 12 V L TRUTH TABLE Logic DG211B DG212B 0 ON OFF 1 OFF ON Logic V Logic V S S 3 D 4 7 D 3 IN IN 3 Top View * Pb containing terminations are not RoHS compliant, exemptions may apply. 1

2 DG211B, DG212B ORDERING INFORMATION Temp. Range Package Standard Part Number Lead (Pb)-free Part Number - 40 C to 85 C 16-Pin Plastic DIP 16-Pin Narrow SOIC 16-Pin TSSOP DG211BDJ DG212BDJ DG211BDY DG211BDY-T1 DG212BDY DG212BDY-T1 DG211BDQ DG211BDQ-T1 DG212BDQ DG212BDQ-T1 DG211BDJ-E3 DG212BDJ-E3 DG211BDY-E3 DG211BDY-T1-E3 DG212BDY-E3 DG212BDY-T1-E3 DG211BDQ-E3 DG211BDQ-T1-E3 DG212BDQ-E3 DG212BDQ-T1-E3 ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) Parameter Limit Unit Voltages Referenced, V+ to 44 GND 25 V Digital Inputs a () - 2 to (V+) + 2, V S, V D or 30 ma, whichever occurs first Current (Any terminal) 30 ma Peak Current, S or D (Pulsed at 1 ms, % duty cycle max.) 0 Storage Temperature - 65 to 125 C Power Dissipation (Package) b 16-Pin Plastic DIP c 470 mw 16-Pin Narrow SOIC and TSSOP d 640 Notes: a. Signals on S X, D X, or IN X exceeding V+ or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6.5 mw/ C above 75 C. d. Derate 7.6 mw/ C above 75 C. SCHEMATIC DIAGRAM (Typical Channel) V+ V L S X IN X Level Shift/ Drive V+ D X GND Figure 1. 2

3 DG211B, DG212B SPECIFICATIONS Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, = V L = 5 V, V IN = 2.4 V, 0.8 V e Temp. a D Suffix - 40 C to 85 C Min. b Typ. c Max. b Analog Switch Analog Signal Range d V ANALOG Full V Drain-Source Room R On-Resistance DS(on) V D = ± V, I S = 1 ma Full 45 R DS(on) Match R DS(on) Room 2 Source Off Leakage Current I S(off) V S = ± 14 V, V D = ± 14 V Room Full - 5 ± 0.01 Drain Off Leakage Current I D(off) V D = ± 14 V, V S = ± 14 V Room Full - 5 ± 0.01 Drain On Leakage Current I D(on) V S = V D = ± 14 V Room Full ± 0.02 Unit 85 0 Digital Control Input Voltage High V INH Full 2.4 Input Voltage Low V INL Full 0.8 V Input Current I INH or I INL V INH or V INL Full µa Input Capacitance C IN Room 5 pf Dynamic Characteristics Turn-On Time t ON V S = V Room 300 Turn-Off Time t OFF see figure 2 Room 200 ns Charge Injection Q C L = 00 pf, V gen = 0 V, R gen = 0 Room 1 pc Source-Off Capacitance C S(off) Room 5 V S = 0 V, f = 1 MHz Drain-Off Capacitance C D(off) Room 5 pf Channel-On Capacitance C D(on) V D = V S = 0 V, f = 1 MHz Room 16 Off Isolation OIRR C L = 15 pf, R L = Room 90 Channel-to-Channel Crosstalk X TALK V S = 1 V RMS, f = 0 khz Room 95 db Power Supply Room Positive Supply Current I+ Full V IN = 0 or 5 V Room - Negative Supply Current I- µa Full - Room Logic Supply Current I L Full Power Supply Range for V Continuous Operation OP Full ± 4.5 ± 22 V na 3

4 DG211B, DG212B SPECIFICATIONS (for Single Supply) Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, = 0 V V L = 5 V, V IN = 2.4 V, 0.8 V e Temp. a D Suffix - 40 C to 85 C Min. b Typ. c Max. b Analog Switch Analog Signal Range d V ANALOG Full 0 12 V Drain-Source On-Resistance R DS(on) V D = 3 V, 8 V, I S = 1 ma Dynamic Characteristics Turn-On Time t ON V S = 8 V Room 300 ns Turn-Off Time t OFF see figure 1 Room 200 Charge Injection Q C L = 1 nf, V gen = 6 V, R gen = 0 Room 4 pc Power Supply Room Positive Supply Current I+ Full V IN = 0 or 5 V Room - Negative Supply Current I- µa Full - Room Logic Supply Current I L Full Power Supply Range for V Continuous Operation OP Full V Notes: a. Room = 25 C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. V IN = input voltage to perform proper function. Room Full Unit Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) R DS(on) - Drain-Source On-Resistance (Ω) ± 5 V ± V ± 15 V ± 20 V V D - Drain Voltage (V) R DS(on) vs. V D and Power Supply Voltages R DS(on) - Drain-Source On-Resistance (Ω) V+ = 15 V = 125 C 85 C 25 C - 55 C V D - Drain V oltage (V) R DS(on) vs. V D and Temperature 4

5 DG211B, DG212B TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) R DS(on) - Drain-Source On-Resistance (Ω) V+ = 5 V 7 V V 12 V 15 V I S, I D - Current (pa) V+ = 22 V = - 22 V T A = 25 C I D(on) I S( of f), I D(of f) V D - Drain V oltage (V) R DS(on) vs. V D and Single Power Supply Voltages V ANALO G - Analog V oltage (V) Leakage Currents vs. Analog Voltage 1 na V+ = 15 V = V S, V D = ± 14 V I S, I D - Current 0 pa pa I S( of f), I D(of f) Q - Charge (pc) 0 - V+ = 15 V = V+ = 12 V = 0 V pa Temperature ( C) Leakage Current vs. Temperature V ANALOG - Analog Voltage (V) Q S, Q D - Charge Injection vs. Analog Voltage V+ = = 0 OIRR (db) R L = Ω K 0K 1M M f - Frequency (Hz) Off Isolation vs. Frequency 5

6 DG211B, DG212B TEST CIRCUITS V S = + 2 V S V+ D Logic Input 3 V 0 V % t r < 20 ns t f < 20 ns 3 V IN GND R L 1 kω C L 35 pf Switch Output 90 % t OFF R L t ON = V S R L + r DS(on) Figure 2. Switching Time C C V S R g = Ω 0V, 2.4 V Off Isolation = 20 log V+ S D IN GND C V S R L V S S 1 R g = Ω IN 1 0 V, 2.4 V S 2 NC IN 2 0 V, 2.4 V GND C = RF bypass V S X TALK Isolation = 20 log V+ D 1 D 2 C Ω R L Figure 3. Off Isolation Figure 4. Channel-to-Channel Crosstalk Δ R g S V+ D V g 3 V IN GND C L 00 pf IN X ON OFF ON Δ = measured voltage error due to charge injection The charge injection in coulombs is Q = C L x Δ Figure 5. Charge Injection 6

7 DG211B, DG212B APPLICATIONS + 5 V V L V+ Logic Input Low = Sample High = Hold DG21 1B 1 kω V IN - LM1A + 5 MΩ 5.1 MΩ 30 pf pf 200 W 00 pf J202 2N4400 J0 J7 UT Aquisition T ime = 25 µs Aperature T ime = 1 µs Sample to Hold Of fset = 5 mv Droop Rate = 5 mv/s Figure 6. Sample-and-Hold C 4 V f C4 Select 1 pf C TTL Control f C3 Select f C2 Select f C1 Select 10 pf C µf C µf V oltage Gain - db f C1 f C2 f C3 f C4 f L1 f L2 f L3 f L4 DG21 1B GND R 3 = 1 MΩ K K 0K 1M Frequency - Hz R 1 = kω - LM1A UT A L (Voltage Gain Below Break Frequency) = 1 f C (Break Frequency) = R 3 R 1 = 0 (40 db) + f L (Unity Gain Frequency) = 2πR 3 C X 1 2πR 1 C X R 2 = kω 30 pf Max. Attenuation = R DS(on) kω - 47 db Figure 7. Active Low Pass Filter with Digitally Selected Break Frequency 7

8 DG211B, DG212B APPLICATIONS + 5 V 30 pf V IN1 V L V+ + LM1A V IN2 CH GND DG419 - DG212B R F1 18 kω R F2 9.9 kω R F3 0 kω Gain = R F + R G R G Gain 1 (x1) Gain 2 (x) Gain 3 (x0) Gain 4 (x00) Logic High = Switch On GND R G1 2 kω R G2 0 Ω R G3 0 Ω Figure 8. A Precision Amplifier with Digitally Programable Input and Gains maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?

9 Package Information JEDEC Part Number: MS E Dim Min Max Min Max A A B C D E e 1.27 BSC 0.0 BSC H L ECN: S Rev. F, 09-Jul-01 DWG: 5300 D H C All Leads e B A1 L 0.1 mm IN Document Number: Jul-01 1

10 Package Information E 1 E D S Q 1 A A 1 L B 1 e 1 B C e A 15 MAX Dim Min Max Min Max A A B B C D E E e e A L Q S ECN: S Rev. D, 09-Jul-01 DWG: 5482 Document Number: Jul-01 1

11 Package Information TSSOP: 16-LEAD DIMENSIONS IN MILLIMETERS Symbols Min Nom Max A A A B C D E E e L L y θ ECN: S Rev. D, 23-Oct-06 DWG: 5624 Document Number: Oct-06 1

12 PAD Pattern RECOMMENDED MINIMUM PAD FOR TSSOP (4.90) (1.40) (7.15) (4.35) (0.35) (0.65) (0.30) Recommended Minimum Pads Dimensions in inches (mm) Revision: 02-Sep-11 1 Document Number: 635 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?900

13 Application Note 826 RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO (9.449) (1.194) APPLICATION NOTE (6.248) (3.861) (0.559) 0.0 (1.270) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index Document Number: Revision: 21-Jan-08

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