Optocoupler, Phototransistor Output, LSOP-4, 110 C Rated, Long Mini-Flat Package

Transcription

1 TCLT11. Series Optocoupler, Phototransistor Output, LSOP-4, 11 C Rated, Long Mini-Flat Package DESCRIPTION The TCLT11. series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead LSOP package. APPLICATIONS Switchmode power supplies Computer peripheral interface Microprocessor system interface C A E C FEATURES SMD low profile 4 lead package High isolation 5 V RMS CTR flexibility available see order information Extra low coupling capacitance Connected base DC input with transistor output Temperature range -55 C to +11 C Creepage distance > 8 mm Material categorization: for definitions of compliance please see AGENCY APPROVALS UL1577, file no. E76222 cul - file no. E76222, equivalent to CSA bulletin 5A DIN EN FIMKO: EN 695 ORDERING INFORMATION T C L T 1 1 # LSOP-4 PART NUMBER 1.2 mm AGENCY CTR (%) CERTIFIED/PACKAGE 5 ma 1 ma 5 ma UL, cul, VDE, FIMKO 5 to 6 63 to to 2 5 to 15 1 to 3 8 to to 26 2 to 4 LSOP-4 TCLT11 TCLT112 TCLT113 TCLT115 TCLT116 TCLT117 TCLT118 TCLT119 ABSOLUTE MAXIMUM RATINGS (, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p 1 μs I FSM 1.5 A Power dissipation P diss 1 mw Junction temperature T j 125 C OUTPUT Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p 1 ms I CM 1 ma Power dissipation P diss 15 mw Junction temperature T j 125 C Rev. 1.9, 19-Jan-16 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 TCLT11. Series ABSOLUTE MAXIMUM RATINGS (, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT COUPLER Total power dissipation P tot 25 mw Operating ambient temperature range T amb -55 to +11 C Storage temperature range T stg -55 to +125 C Soldering temperature (1) T sld 26 C Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Wave soldering three cycles are allowed. Also refer to Assembly Instruction ( P tot - Total Power Dissipation (mw) Coupled device Phototransistor IR-diode Fig. 1 - Total Power Dissipation vs. Ambient Temperature ELECTRICAL CHARACTERISTICS (, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage I F = 5 ma V F V Junction capacitance V R = V, f = 1 MHz C j pf OUTPUT Collector emitter voltage I C = 1 ma V CEO V Emitter collector voltage I E = 1 μa V ECO V Collector emitter leakage current V CE = 2 V, I F = A I CEO na COUPLER Collector emitter saturation voltage I F = 1 ma, I C = 1 ma V CEsat V Cut-off frequency V CE = 5 V, I F = 1 ma, R L = 1 Ω f c khz Coupling capacitance f = 1 MHz C k pf Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Rev. 1.9, 19-Jan-16 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 TCLT11. Series CURRENT TRANSFER RATIO (, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT V CE = 5 V, I F = 5 ma TCLT11 CTR 5-6 % V CE = 5 V, I F = 1 ma TCLT112 CTR % TCLT113 CTR 1-2 % TCLT112 CTR % V CE = 5 V, I F = 1 ma TCLT113 CTR % I C /I F TCLT115 CTR 5-15 % TCLT116 CTR 1-3 % V CE = 5 V, I F = 5 ma TCLT117 CTR 8-16 % TCLT118 CTR % TCLT119 CTR 2-4 % SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Partial discharge test voltage - routine test 1 %, t test = 1 s V pd 1.6 kv Partial discharge test voltage - lot test (sample test) t Tr = 6 s, t test = 1 s, (see figure 2) V IOTM 8 kv V pd 1.3 kv Isolation test voltage (RMS) V ISO 5 V RMS V IO = 5 V R IO 1 12 Ω Insulation resistance V IO = 5 V, T amb = 1 C R IO 1 11 Ω V IO = 5 V, T amb = 15 C (construction test only) R IO 1 9 Ω Forward current I si 13 ma Power dissipation P so 265 mw Rated impulse voltage V IOTM 8 kv Safety temperature T si 15 C Clearance distance 8. mm Creepage distance 8. mm Insulation distance (internal).4 mm Note According to DIN EN (VDE 884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. 3 V IOTM 25 2 Phototransistor P so (mw) t 1, t 2 = 1 s to 1 s t 3, t 4 = 1 s t test = 1 s t stres = 12 s 15 1 V pd V IOWM V IORM 5 IR-diode I si (ma) T si - Safety Temperature ( C) t 1 t Tr = 6 s t 3 t test t 4 t 2 t stres t Fig. 2 - Derating Diagram Fig. 3 - Test Pulse Diagram for Sample Test According to DIN EN (VDE 884); IEC Rev. 1.9, 19-Jan-16 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 TCLT11. Series SWITCHING CHARACTERISTICS (, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time V S = 5 V, I C = 2 ma, R L = 1 Ω, V S = 5 V, I C = 2 ma, R L = 1 Ω, V S = 5 V, I C = 2 ma, R L = 1 Ω, V S = 5 V, I C = 2 ma, R L = 1 Ω, V S = 5 V, I C = 2 ma, R L = 1 Ω, V S = 5 V, I C = 2 ma, R L = 1 Ω, V S = 5 V, I F = 1 ma, R L = 1 kω, (see figure 4) V S = 5 V, I F = 1 ma, R L = 1 kω, (see figure 4) t d μs t r μs t f μs t s μs t on μs t off μs t on μs t off μs I F I F R G = 5 Ω I F + 5 V IC = 2 ma; adjusted through input amplitude I C 1 % 9 % t p t t p T =.1 t p = 5 µs 5 Ω 1 Ω Channel I Channel II Oscilloscope R L = 1 MΩ C L = 2 pf 1 % t r t d t on t s t f t off t Fig. 4 - Test Circuit, Non-Saturated Operation t p t d t r t on (= t d + t r ) Pulse duration t s Delay time t f Rise time t off (= t s + t f ) Turn-on time Fig. 6 - Switching Times Storage time Fall time Turn-off time I F I F = 1 ma + 5 V I C R G = 5 Ω t p T =.1 t p = 5 µs 5 Ω 1 kω Channel I Channel II Oscilloscope R L 1 MΩ 2 pf C L Fig. 5 - Test Circuit, Saturated Operation Rev. 1.9, 19-Jan-16 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 TCLT11. Series TYPICAL CHARACTERISTICS (, unless otherwise specified) I F - Forward Current (ma) T amb = 11 C T amb = 75 C T amb = C T amb = - 55 C I C - Collector Current (ma) I F = 1 ma I F = 1 ma I F = 5 ma I F = 2 ma V F - Forward Voltage (V) V CE - Collector Emitter Voltage (sat) (V) Fig. 7 - Forward Voltage vs. Forward Current Fig. 1 - Collector Current vs. Collector Emitter Voltage (saturated) I C - Collector Current (ma) 55 5 I F = 35 ma 45 4 I F = 3 ma 35 I F = 25 ma 3 25 I F = 2 ma 2 I F = 15 ma 15 1 I F = 1 ma I F = 1 ma 5 I F = 5 ma V CE - Collector Emitter Voltage (non-sat) (V) N CTR - Normalized CTR (non-saturated) Normalized to CTR value: I F = 1 ma, V CE = 5 V, Fig. 8 - Collector Current vs. Collector Emitter Voltage (NS) Fig Normalized Current Transfer Ratio (non-saturated) vs. Ambient Temperature I CE - Leakage Current (na) 1 I F = ma V CE = 4 V V CE = 24 V V CE = 12 V N CTR - Normalized CTR (sat) Normalized to CTR value: I F = 1 ma, V CE = 5 V, Fig. 9 - Leakage Current vs. Ambient Temperature Fig Normalized Current Transfer Ratio (saturated) vs. Ambient Temperature Rev. 1.9, 19-Jan-16 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 TCLT11. Series N CTR - Normalized CTR (NS) T amb = -55 C T amb = C T amb = 75 C T amb = 1 C Normalized to: I F = 5 ma, V CE = 5 V, I F - Forward Current (ma) F CTR (khz) 1 V CC = 5 V I C (ma) Fig Normalized CTR (non-saturated) vs. Forward Current Fig CTR Frequency vs. Collector Current N CTR - Normalized CTR (sat) V CE =.4 V Normalized to: I F = 5 ma, V CE = 5 V, T amb = C T amb = - 55 C T amb = 75 C T amb = 1 C I F - Forward Current (ma) t on, t off Switching Time (μs) V CE = 5 V, I F = 5 ma t off (μs) t on (μs) R L - Load Resistance (kω) Fig Normalized CTR (saturated) vs. Forward Current Fig Switching Time vs. Load Resistance Phase Angle (deg) V CE = 5 V R L = 1 Ω R L = 1 Ω V CEsat - Collector Emitter Voltage (V).4 I F = 1 ma.35.3 I c = 5 ma.25.2 I c = 2 ma I c = 1 ma f - Frequency (khz) Fig Phase Angle vs. Frequency Fig Collector Emitter Voltage vs. Ambient Temperature (saturated) Rev. 1.9, 19-Jan-16 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 TCLT11. Series PACKAGE DIMENSIONS (in millimeters) 2.3 max max ± Seating plane.45 ± nom. 4 3 Possible footprint Pin no. 1 identification technical drawings according to DIN specifications PACKAGE MARKING (example of TCLT113) TCLT113 V YWW 68 TAPE AND REEL DIMENSIONS (in millimeters) ESD sticker 1.75 Ø (13") Tape slot in core Regular, special or bar code label Direction of pulling out Ø 1.6 technical drawings according to DIN specification Fig Reel Dimensions (3 units per reel) Fig. 2 - Tape Dimensions Rev. 1.9, 19-Jan-16 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 TCLT11. Series SOLDER PROFILE Temperature ( C) C 24 C 217 C max. 12 s max. 26 C 245 C max. 3 s max. 1 s max. ramp down 6 C/s HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Floor life: unlimited Conditions: T amb < 3 C, RH < 85 % Moisture sensitivity level 1, according to J-STD-2 5 max. ramp up 3 C/s Time (s) Fig Lead (Pb)-free Reflow Solder Profile according to J-STD-2 Rev. 1.9, 19-Jan-16 8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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