3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers
|
|
- Avice Riley
- 6 years ago
- Views:
Transcription
1 G948E, G949E 3.2, Fast Switching Speed, +12 V / +5 V / +3 V / ± 5 V, 4- / 8-Channel Analog Multiplexers ESCRIPTION The G948E, G949E uses BiCMOS wafer fabrication technology that allows the G948E, G949E to operate on single and dual supplies. Single supply voltage ranges from 3 V to 16 V while dual supply operation is recommended with ± 3 V to ± 8 V. The G948E is an 8-channel single-ended analog multiplexer designed to connect one of eight inputs to a common output as determined by a 3-bit binary address (A,, ). The G949E is a dual 4-channel differential analog multiplexer designed to connect one of four differential inputs to a common dual output as determined by its 2-bit binary address (A, ). Break-before-make switching action to protect against momentary crosstalk between adjacent channels. As a committed partner to the community and the environment, manufactures this product with lead (Pb)-free device terminations. The G948E, G949E are offered in a QFN package that has a nickel-palladium-gold device terminations and is represented by the lead (Pb)-free -E4 suffix. The nickel-palladium-gold device terminations meet all the JEEC standards for reflow and MSL ratings. FEATURES 3 V to 16 V single supply or ± 3 V to ± 8 V dual supply operation Low on-resistance - R ON : 3.2 typ. Fast switching: t ON - 36 ns, t OFF - 24 ns Break-before-make guaranteed Low leakage TTL, CMOS, LV logic (3 V) compatible 25 V ES protection (HBM) Material categorization: for definitions of compliance please see BEFITS Fast switching speed Low switch resistance Wide operation voltage range Simple logic interface APPLICATIONS Automatic test equipment Process control and automation ata acquisition systems Meters and instruments Medical and healthcare systems Communication systems Audio and video signal routing Relay replacement Battery powered systems FUNCTIONAL BLOCK IAGRAM AN PIN CONFIGURATION G948E QFN16 S G949E QFN16 S 1b b a S S 5 S 2b 1 12 S 1a GN 2 11 S 6 GN 2 11 S 2a S 3 3 S 3b 3 S 4 4 ecoder / driver 9 S 7 S 4b 4 ecoder / driver 95 S 3a A S 8 A S 4a Top view Top view Note QFN16 package central exposed pad has no electrical connection inside the chip. It can be connected GN,,, or left floating. S Rev. A, 25-Jul-16 1 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
2 G948E, G949E TRUTH TABLE AN ORERING INFORMATION TRUTH TABLE G948E A ON SWITCH X X X 1 None TRUTH TABLE G949E A ON SWITCH X X 1 None X = do not care For low and high voltage levels for V AX and V consult igital Control parameters for specific operation. See specifications tables for: Single supply 12 V ual supply = 5 V, = -5 V Single supply 5 V Single supply 3 V ORERING INFORMATION TEMP. RANGE PACKAGE PART NUMBER MIN. ORER / PACK. QUANTITY -4 C to +85 C 16-pin QFN (4 mm x 4 mm) (variation 1) G948EN-T1-GE4 G949EN-T1-GE4 Tape and reel, 25 units Tape and reel, 25 units ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) PARAMETER LIMIT UNIT Voltage referenced to -.3 to +18 GN to 18 V igital inputs a, V S, V () -.3 to () +.3 Current (any terminal except S or ) 3 Continuous current, S or ma Peak current, S or (pulsed at 1 ms, % duty cycle max.) 2 Package solder reflow conditions (lead (Pb)-free assembly) d 16-pin (4 x 4 mm) QFN 26 + / -5 Storage temperature -65 to +15 C Power dissipation (package) b, (T A = 7 C) 16-pin (4 x 4 mm) QFN c 188 mw ES human body model (HBM), per ANSI / ESA / JEEC JS-1 25 V Latch up current, per JES78 4 ma Notes a. Signals on SX, X or INX exceeding or will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. erate 23.5 mw/ C above 7 C. d. Manual soldering with soldering iron is not recommended for leadless components. The QFN is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S Rev. A, 25-Jul-16 2 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
3 G948E, G949E SPECIFICATIONS (Single Supply 12 V) PARAMETER SYMBOL TEST CONITIONS UNLESS OTHERWISE SPECIFIE = 12 V, ± %, = V V A, V =.8 V or 2.4 V f TEMP. b LIMITS -4 C to +85 C MIN. c TYP. d MAX. c Analog Switch Analog signal range e V ANALOG Full - 12 V =.8 V, V On-resistance R = 2 V or 9 V, I S = 5 ma Room ON sequence each switch on Full Room =.8 V, V = 2 V or 9 V, I S = 5 ma On-resistance flatness i R ON flatness Room Switch off leakage current I S(off) V = 2.4 V, V = 11 V or 1 V, V S = 1 V or 11 V I (off) na Channel on leakage current I (on) V = V, V S = V = 1 V or 11 V igital Control Logic high input voltage V INH Full Logic low input voltage V INL Full V Input current I IN V AX = V = 2.4 V or.8 V Full -1-1 μa ynamic Characteristics Transition time t TRANS V S1 = 8 V, V S8 = V, (G948E) V S1b = 8 V, V S4b = V, (G949E) see fig. 2 Room Full V Break-before-make time t S(all) = V A = 5 V Room BBM see fig. 4 Full ns Room Enable turn-on time t ON() VAX = V, V S1 = 5 V (G948E) Full V AX = V, V S1b = 5 V (G949E) Enable turn-off time t see fig. 3 Room OFF() Full Charge injection e Q C L = 1 nf, V G = V, R G = Room pc Off isolation e, h OIRR Room f = khz, R L = 1 k Crosstalk e X TALK Room db Source off capacitance e C S(off) f = 1 MHz, V S = V, V = 2.4 V G948E Room G949E Room rain off capacitance e C (off) f = 1 MHz, V = V, V = 2.4 V G948E Room G949E Room pf rain on capacitance e C (on) f = 1 MHz, V = V, V = V G948E Room G949E Room Power Supplies Power supply current I+ V = V A = V or Room μa UNIT S Rev. A, 25-Jul-16 3 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
4 G948E, G949E SPECIFICATIONS (ual Supply = 5 V, = -5 V) PARAMETER SYMBOL TEST CONITIONS UNLESS OTHERWISE SPECIFIE = 5 V, = -5 V, ± % V A, V =.8 V or 2 V f TEMP. b LIMITS -4 C to +85 C MIN. c TYP. d MAX. c Analog Switch Analog signal range e V ANALOG Full -5-5 V = 4.5 V, = -4.5 V, V On-Resistance R = ± 3.5 V, I S = 5 ma Room ON sequence each switch on Full Room = 4.5 V, = -4.5 V, V = ± 3.5 V, I S = 5 ma On-resistance flatness i R ON Flatness Room I S(off) Switch off leakage current a = 5.5, = -5.5 V V = 2.4 V, V = ± 4.5 V, V S = ± 4.5 V I (off) na Channel on leakage current a = 5.5 V, = -5.5 V I (on) V = V, V = ± 4.5 V, V S = ± 4.5 V igital Control Logic high input voltage V INH Full Logic low input voltage V INL Full V Input current a I IN V AX = V = 2 V or.8 V Full -1-1 μa ynamic Characteristics Transition time e t TRANS V S1b = 3.5 V, V S4b = -3.5 V, (G949E) see fig. 2 Full V S1 = 3.5 V, V S8 = -3.5 V, (G948E) Room Break-before-make time e V t S(all) = V A = 3.5 V Room BBM see fig. 4 Full ns Enable turn-on time e Room t ON() VAX = V, V S1 = 3.5 V (G948E) Full V AX = V, V S1b = 3.5 V (G949E) Enable turn-off time e t see fig. 3 Room OFF() Full Source off capacitance e C S(off) f = 1 MHz, V S = V, V = 2 V rain off capacitance e C (off) f = 1 MHz, V = V, V = 2 V rain on capacitance e C (on) f = 1 MHz, V = V, V = V Power Supplies Power supply current G948E Room G949E Room G948E Room G949E Room G948E Room G949E Room I+ Room V = VA = V or I- Room UNIT pf μa S Rev. A, 25-Jul-16 4 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
5 G948E, G949E SPECIFICATIONS (Single Supply 5 V) PARAMETER SYMBOL TEST CONITIONS UNLESS OTHERWISE SPECIFIE = 5 V, ± %, = V V A, V =.8 V or 2 V f TEMP. b LIMITS -4 C to +85 C MIN. c TYP. d MAX. c Analog Switch Analog signal range e V ANALOG Full - 5 V On-resistance R ON = 4.5 V, V or V S = 1 V or 3.5 V, I S = 5 ma Room Full R ON match between channels g R ON Room = 4.5 V, V = 1 V or 3.5 V, I S = 5 ma On-resistance flatness i R ON Room Flatness Switch off leakage current a I S(off) = 5.5 V I (off) V S = 1 V or 4 V, V = 4 V or 1 V na Channel on leakage current a = 5.5 V I (on) V = V S = 1 V or 4 V, sequence each switch on igital Control Logic high input voltage V INH Full = 5 V Logic low input voltage V INL Full V Input current a I IN V AX = V = 2 V or.8 V Full -1-1 μa ynamic Characteristics Transition time e t TRANS V S1 = 3.5 V, V S8 = V, (G948E) V S1b = 3.5 V, V S4b = V, (G949E) see fig. 2 Room Full Break-before-make time e V t S(all) = V A = 3.5 V Room OP see fig. 4 Full ns Enable turn-on time e Room t ON() VAX = V, V S1 = 3.5 V (G948E) Full V AX = V, V S1b = 3.5 V (G949E) Enable turn-off time e t see fig. 3 Room OFF() Full Charge injection e Q C L = 1 nf, R G =, V G = V Room pc Off isolation e, h OIRR Room R L = 1 k, f = khz Crosstalk e X TALK Room db Source off capacitance e C S(off) f = 1 MHz, V S = V, V = V G948E Room G949E Room rain off capacitance e C (off) f = 1 MHz, V = V, V = 2 V G948E Room G949E Room pf rain on capacitance e C (on) f = 1 MHz, V = V, V = V G948E Room G949E Room Power Supplies Power supply current I+ V = V A = V or Room μa UNIT S Rev. A, 25-Jul-16 5 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
6 G948E, G949E SPECIFICATIONS (Single Supply 3 V) PARAMETER SYMBOL TEST CONITIONS UNLESS OTHERWISE SPECIFIE = 3 V, ± %, = V V =.4 V or 1.8 V f TEMP. b LIMITS -4 C to +85 C MIN. c TYP. d MAX. c Analog Switch Analog signal range e V ANALOG Full - 3 V On-resistance R ON = 2.7 V, V =.5 V or 2.2 V, I S = 5 ma R ON match between channels g R ON = 2.7 V, V =.5 V or 2.2 V, I S = 5 ma On-resistance flatness i R ON Flatness Room Full Room Room I S(off) Switch off leakage current a = 3.3 V V S = 2 V or 1 V, V = 1 or 2 V I (off) na Channel on leakage current a = 3.3 V I (on) V = V S = 1 V or 2 V, sequence each switch on igital Control Logic high input voltage V INH Full Logic low input voltage V INL Full V Input current a I IN V AX = V = 1.8 V or.4 V Full -1-1 μa ynamic Characteristics Transition time t TRANS V S1b = 1.5 V, V S4b = V, (G949E) see fig. 2 Full V S1 = 1.5 V, V S8 = V, (G948E) Room V Break-before-make time t S(all) = V A = 1.5 V Room BBM see fig. 4 Full ns Room Enable turn-on time t ON() VAX = V, V S1 = 1.5 V (G948E) Full V AX = V, V S1b =1.5 V (G949E) Enable turn-off time t see fig. 3 Room OFF() Full Charge injection e Q C L = 1 nf, R G =, V G = V Room pc Off isolation e, h OIRR Room f = khz, R L = 1 k Crosstalk e X TALK Room db Source off capacitance e C S(off) f = 1 MHz, V S = V, V = 1.8 V rain off capacitance e C (off) f = 1 MHz, V = V, V = 1.8 V rain on capacitance e C (on) f = 1 MHz, V = V, V = V Power Supplies G948E Room G949E Room G948E Room G949E Room G948E Room G949E Room Power supply current I+ V = V A = V or Room μa Notes a. Leakage parameters are guaranteed by worst case test condition and not subject to production test. b. Room = 25 C, full = as determined by the operating temperature suffix. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. d. Typical values are for ESIGN AI ONLY, not guaranteed nor subject to production testing. e. Guaranteed by design, not subject to production test. f. V IN = input voltage to perform proper function. g. R ON = R ON max. - R ON min. h. Worst case isolation occurs on channel 4 due to proximity to the drain pin. i. R ON flatness is measured as the difference between the minimum and maximum measured values across a defined analog signal. UNIT pf S Rev. A, 25-Jul-16 6 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
7 G948E, G949E TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) R ON - On-Reistance (Ω) = +3 V, I S = 5 ma T A = 25 C = +5 V, I S = 5 ma = +12 V, I S = 5 ma = +16 V, I S = 5 ma R ON - On-Reistance (Ω) C C C 6 4 = +3 V 2 I S = 5 ma V - Analog Voltage (V) V - Analog Voltage (V) On-Resistance vs. Analog Voltage On-Resistance vs. Analog Voltage R ON - On-Reistance (Ω) C +25 C -4 C = +12 V I S = 5 ma V - Analog Voltage (V) R ON - On-Reistance (Ω) V± = ± 5 V V± = ± 8 V V - Analog Voltage (V) T A = 25 C I S = 5 ma On-Resistance vs. Analog Voltage On-Resistance vs. Analog Voltage R ON - On-Reistance (Ω) = +5 V I S = 5 ma +85 C +25 C -4 C R ON - On-Reistance (Ω) C +25 C C 1. V± = ± 5 V.5 I S = 5 ma V - Analog Voltage (V) V - Analog Voltage (V) On-Resistance vs. Analog Voltage On-Resistance vs. Analog Voltage S Rev. A, 25-Jul-16 7 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
8 G948E, G949E TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 5 I S(OFF) I (OFF) Leakage Current (pa) I (ON) V± = ± 5 V I+ - Supply Current (pa) V± = 12 V / V V = V A = V V± = ± 5 V V = V A = V V - Analog Voltage (V) Leakage Current vs. Analog Voltage Temperature ( C) Supply Current vs. Temperature Leakage Current (pa) IS(OFF) I (ON) I (OFF) V± = +12 V / V V - Analog Voltage (V) Leakage Current vs. Analog Voltage Loss, OIRR, X TALK (db) - Loss OIRR -5 X TALK -6-7 G948E -8 V± = 12 V / V -9 - K 1M M M 1G Frequency (Hz) Loss, OIRR, X TALK vs. Frequency Leakage Current (pa) 2 V± = ± 5 V 18 I (ON),V = 4.5 V 16 I (OFF),V = 4.5 V, V S = -4.5 V 14 I (ON),V = -4.5 V 12 I (OFF),V = 1 V, V S = 4.5 V 8 I S(OFF),V = -4.5 V, V S = 4.5 V 6 4 I S(OFF),V = 4.5 V, V S = -4.5 V Temperature ( C) Leakage Current vs. Temperature Loss, OIRR, X TALK (db) - Loss OIRR -5 X TALK -6-7 G949E -8 V± = 12 V / V -9 - K 1M M M 1G Frequency (Hz) Loss, OIRR, X TALK vs. Frequency S Rev. A, 25-Jul-16 8 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
9 G948E, G949E TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) V± = ± 5 V I+ - Supply Current (μa) V T - Switching Threshold (V) V IH = 25 C V IH =-4 C V IL = 25 C V IL = 85 C.1 K K 1M M Input Switching Frequency (Hz) Supply Voltage (V) Supply Current vs. Input Switching Frequency Switching Threshold vs. Supply Voltage t ON(), t OFF() - Switching Time (ns) = 3 V, t ON = 5 V, t ON = 3 V, t OFF = 5 V, t OFF = 12 V, t ON Q INJ - Charge Injection (pc) = 12 V G948E G949E = 12 V, t OFF Temperature ( C) V S - Analog Voltage (V) Switching Time vs. Temperature Charge Injection vs. Analog Voltage = 3 V, t TRANS G948E t TRANS, - Transition Time (ns) = 5 V, t TRANS- = 5 V, t TRANS+ = 3 V, t TRANS+ = 12 V, t TRANS+ Capacitance (pf) C (ON) C (OFF) 25 = 12 V, t TRANS Temperature ( C) 2 C S(OFF) V ANALOG (V) Transition Time vs. Temperature Capacitance vs. Analog Voltage S Rev. A, 25-Jul-16 9 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
10 G948E, G949E TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 12 G949E C (ON) Capacitance (pf) C (OFF) 2 C S(OFF) V ANALOG (V) SCHEMATIC IAGRAM (Typical Channel) Capacitance vs. Analog Voltage A A X Level Shift ecode/ rive S 1 GN S n Fig. 1 - S Rev. A, 25-Jul-16 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
11 G948E, G949E TEST CIRCUITS 5 Ω A S 1 S 2 - S 7 G948E S 8 V S1 V S8 Logic Input V AX 3 V V 5 % t r < 5 ns t f < 5 ns GN 3 Ω 35 pf Switch Output V S1 5 % 9 % V S8 9 % 5 Ω S 1b A S 1a - S 4a, a S G949E 4b b GN 3 Ω V S1b V S4b 35 pf t TRANS S 1 ON Return to Specifications: Single Supply 12 V ual Supply = 5 V, = - 5 V Single Supply 5 V Single Supply 3 V S 8 ON (G948) or S 4 ON (G949) t TRANS Fig. 2 - Transition Time S 1 V S1 5 S 2 - S A 8 G948E GN 3 35 pf Logic Input 3 V V t OFF() 5 % t r < 5 ns t f < 5 ns t ON() Switch Output 9 % S 1b V S1 V 9 % 5 A S 1a - S 4a, a S 2b - S 4b G949E b GN 3 35 pf Return to Specifications: Single Supply 12 V ual Supply = 5 V, = - 5 V Single Supply 5 V Single Supply 3 V Fig. 3 - Enable Switching Time S Rev. A, 25-Jul ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
12 G948E, G949E TEST CIRCUITS 5 A G948E G949E All S and a GN b, 3 V S1 35 pf Logic Input Switch Output 3 V V V S V 5 % 9 % t OP t r < 5 ns t f < 5 ns Return to Specifications: Single Supply 12 V ual Supply = 5 V, = - 5 V Single Supply 5 V Single Supply 3 V Fig. 4 - Break-Before-Make Interval V g R g Channel Select S X A GN C L 1 nf Logic Input Switch Output 3 V V OFF ON OFF Δ is the measured voltage due to charge transfer error Q, when the channel turns off. Q = C L x Δ Δ Fig. 5 - Charge Injection V IN S X R g = 5 Ω S 8 A UT GN R L 5 Ω Off Isolation = 2 log UT V IN Fig. 6 - Off Isolation S Rev. A, 25-Jul ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
13 G948E, G949E TEST CIRCUITS S 1 V S IN X R IN 5 Ω R g = 5 Ω S 8 A UT GN R L 5 Ω Crosstalk = 2 log UT V IN Fig. 7 - Crosstalk V IN S 1 R g = 5 Ω A GN R L 5 Ω UT Insertion Loss = 2 log Fig. 8 - Insertion Loss UT V IN Channel Select A1 A S 1 S 8 Meter HP4192A Impedance Analyzer or Equivalent GN f = 1 MHz Fig. 9 - Source rain Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S Rev. A, 25-Jul ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
14 QFN 4x4-16L Case Outline Package Information (5) (4) VARIATION 1 VARIATION 2 IM MILLIMETERS (1) INCHES MILLIMETERS (1) INCHES MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. MIN. NOM. MAX. A A A3.2 ref..8 ref..2 ref..8 ref. b BSC.157 BSC 4. BSC.157 BSC e.65 BSC.26 BSC.65 BSC.26 BSC E 4. BSC.157 BSC 4. BSC.157 BSC E K.2 min..8 min..2 min..8 min. L N (3) Nd (3) Ne (3) Notes (1) Use millimeters as the primary measurement. (2) imensioning and tolerances conform to ASME Y14.5M (3) N is the number of terminals. Nd and Ne is the number of terminals in each and E site respectively. (4) imensions b applies to plated terminal and is measured between.15 mm and.3 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max..5 mm. ECN: S Rev. B, 22-Apr-13 WG: 589 Revision: 22-Apr-13 1 ocument Number: For technical questions, contact: powerictechsupport@vishay.com ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
15 Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT SPECIFICATIONS AN ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 217 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVE Revision: 8-Feb-17 1 ocument Number: 9
Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers
Precision 8-Ch/ual 4-Ch Low Voltage Analog Multiplexers ESCRIPTION The G948, G949 uses BiCMOS wafer fabrication technology that allows the G948, G949 to operate on single and dual supplies. Single supply
More informationDG2707. High Speed, Low Voltage, 3, Differential 4:1 CMOS Analog Multiplexer/Switch. Vishay Siliconix FEATURES DESCRIPTION APPLICATIONS
G2707 High Speed, Low Voltage, 3, ifferential 4:1 CMOS Analog Multiplexer/Switch ESCRIPTION The G2707 is a high speed, low voltage, 3, differential 4:1 multiplexer. It operates from a 1.65 V to 4.3 V single
More informationPowered-off Protection, 6, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
Powered-off Protection,, 1. V to 5.5 V, SPDT Analog Switch (:1 Multiplexer) DESCRIPTION The is a high performance single-pole, double-throw (SPDT) analog switch designed for 1. V to 5.5 V operation with
More informationPowered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)
DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation
More informationN-Channel 20 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiS6ENT 3.3 mm mm Top View PowerPAK -8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) R S(on) max. () at V GS = 4.5 V.39 R S(on) max. () at V GS = 3.7 V.4 R S(on) max. () at
More informationFEATURES BENEFITS APPLICATIONS
0.37, Low Capacitance, Dual DPDT / Quad SPDT Analog Switch DESCRIPTION The, is a four-channel single-pole double-throw (SPDT) analog switch with two control inputs. It is also known as a two-channel double-pole
More informationLow-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (MAX.) I (A) f Q g (TYP.) 5 3.3 mm.58 at V GS = V 2.2.85 at V GS = 7.5 V 6.6 PowerPAK 22-8S S S S 2 3 3.3 mm G 4 8 7 6 Bottom View 5 Ordering
More informationImproved Quad CMOS Analog Switches
Improved Quad CMOS Analog Switches DG211B, DG212B DESCRIPTION The DG211B, DG212B analog switches are highly improved versions of the industry-standard DG211, DG212. These devices are fabricated in proprietary
More informationFEATURES APPLICATIONS
6 On-Resistance, +12 V, ± V, + V, +3 V, SPST and SPDT Switches DESRIPTION analog switches are designed to operate from +3 V to +16 V single supply or ± 3 V to ± 8 V dual supply and are fully specified
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (-S) MOSFET SiA6J 2. mm Top View PowerPAK SC-7-6L Single 2. mm 2 3 G Bottom View PROUCT SUMMARY V S (V) 6 R S(on) max. () at V GS = V.8 R S(on) max. () at V GS = 7. V.22 Q g typ. (nc) 6.9
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PowerPAK 22-8 Single 8 5 6 7 FEATURES TrenchFET Gen IV power MOSFET % R g and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationP-Channel 30 V (D-S) MOSFET
SiA42J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.3 at V GS = - V - 2 a nc.6 at V GS = - 4. V - 2 a PowerPAK SC-7-6L-Single FEATURES TrenchFET Power MOSFET New Thermally
More informationN-Channel 30 V (D-S) MOSFET
New Product SiA462J N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3 6.8 at V GS = V 2.2 at V GS = 6 V 2.22 at V GS = 4. V 2 PowerPAK SC-7-6L-Single 2. mm S 4 S
More informationLow-Voltage Single SPDT Analog Switch
Low-Voltage Single SPDT Analog Switch DG22 DESCRIPTION The DG22 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power,
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-S) MOSFET SiB45K PROUCT SUMMARY V S (V) R S(on) ( ) MAX. I (A) a Q g (Typ.).85 at V GS = V.3.3 at V GS = 4.5 V 4.9 PowerPAK SC-75-L-Single 5. mm S 4 S 2 3 G. mm Ordering Information: SiB45K-T-GE3
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).2 at V GS = - 4. V - 2 a - 2.27 at V GS = - 2. V - 2 a.36 at V GS = -.8 V - 2 a 24. nc.6 at V GS = -. V - 4 Thin PowerPAK SC-7-6L-Single
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i7en 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) -3 R (on) max. () at V G = -4.5 V.855 R (on) max. () at V G = -2.5 V.6 Q g typ. (nc) 3.5 I
More informationP-Channel 100 V (D-S) MOSFET
P-Channel V (-) MOFET i73an PowerPAK 22-8 ingle 8 5 7 FEATURE TrenchFET power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 3.3 mm
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i765n PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen III p-channel power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationAutomotive N- and P-Channel 100 V (D-S) 175 C MOSFET
SQJ57EP Automotive N- and P-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL V DS (V) - R DS(on) ( ) at V GS = ± V.45 46 R DS(on) ( ) at V GS = ± 4.5 V.58.265 I D (A) 5-9.5 Configuration
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (-) MOFET i785ap Vishay iliconix 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 6 R (on) max. ( ) at V G = V.95 R (on) max. ( ) at V G = 4.5 V.25 Q g typ.
More informationN-Channel 250 V (D-S) MOSFET
N-Channel 5 V (-) MOFET i79ap 6.5 mm Top View PowerPAK O-8 ingle 8 5.5 mm 4 G Bottom View PROUCT UMMARY V (V) 5 R (on) max. ( ) at V G = V. R (on) max. ( ) at V G = 7.5 V Q g typ. (nc).7 I (A) 4.4 f Configuration
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-) MOFET ir87ap 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.66 R (on) max. (Ω) at V G = 7.5 V.7 R (on) max. (Ω) at V G = 4.5 V.5 Q g typ.
More informationAutomotive N- and P-Channel 40 V (D-S) 175 C MOSFET
SQJ54EP Automotive N- and P-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D D 4 G 3 S G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-) MOFET PowerPAK 22-8 ingle 8 5 6 7 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see /doc?9992 3.3 mm Top View
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-) MOFET 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) 25 R (on) max. () at V G = V.4 R (on) max. () at V G = 4.5 V.24 Q g typ. (nc) 7.2 I (A) a, g Configuration
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.) 3.8 at V GS = V 2.22 at V GS = 4. V 2 6 2. mm PowerPAK SC-7-6L-Single S 4 S 2 3 G 2. mm Bottom View Ordering Information:
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-) MOFET ir668p 6.5 mm Top View PowerPAK O-8C 5.5 mm Bottom View PROUCT UMMARY V (V) R (on) max. (Ω) at V G = V.48 R (on) max. (Ω) at V G = 7.5 V.55 Q g typ. (nc) 55 I (A) 95 Configuration
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET 8 7 O-8 ingle 5 FEATURE TrenchFET Gen III p-channel power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 Top View PROUCT
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i443y 8 7 6 O-8 ingle Top View PROUCT UMMARY V (V) -2 R (on) max. () at V G = -4. V.4 R (on) max. () at V G = -2. V.2 R (on) max. () at V G = -.8 V.3 Q g typ. (nc) 39 I (A) -.4
More informationPC Card (PCMCIA) Dual Interface Switch
Product is End of Life 3/204 Si9707 PC Card (PCMCIA) Dual Interface Switch DESCRIPTION The Si9707 offers an integrated solution for dual PC Card power interfaces that require only V CC switching. This
More informationP-Channel 8 V (D-S) MOSFET
SiA427J P-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.).6 at V GS = - 4. V - 2 a - 8 ocument Number: 667 S2-4-Rev. C, 2-May-2.2 at V GS = - 2. V - 2 a.26 at V GS = -.8 V -
More informationN-Channel 150 V (D-S) MOSFET
N-Channel V (-) MOFET 8 7 O-8 ingle FEATURE ThunderFET power MOFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?999 Marking code: 4848A Top View PROUCT
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationN-Channel 60 V (D-S) MOSFET
N-Channel V (-) MOFET i485by 8 7 O-8 ingle 5 FEATURE TrenchFET Gen IV power MOFET % R g and UI tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PROUCT UMMARY
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET i443y PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) d Q g (TYP.).6 at V G = - V -5.3-3.74 at V G = -6 V -3. 54 nc.9 at V G = -4.5 V -.8 FEATURE TrenchFET power MOFET % R g and UI tested
More informationP-Channel 30-V (D-S) MOSFET
Si5435BC P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).45 at V GS = - V - 5.9-3.8 at V GS = - 4.5 V - 4.4 FEATURES Halogen-free According to IEC 649-- Available TrenchFET Power MOSFETs
More informationPrecision 16-Channel/Dual 8-Channel CMOS Analog Multiplexers
G6B, G7B Precision 6-Channel/ual 8-Channel CMOS nalog Multiplexers ESCRIPTION The G6B and G7B are high performance analog multiplexers. Their ultra-low switch charge injection, low channel capacitance,
More informationN-Channel 8 V (D-S) MOSFET
Si00X N-Channel 8 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) 0.086 at V GS =. V. a 8 0.09 at V GS =. V.9 0.0 at V GS =.8 V. 7. 0.0 at V GS =. V 0.7 FEATURES Halogen-free According
More information8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers
8-Ch/ual 4-Ch High-Performance CMOS Analog Multiplexers Low On-Resistance r S(on) : Low Charge Injection Q: pc Fast Transition Time t TRANS : 6 ns Low Power I SUPPLY : A Single Supply Capability 44-V Supply
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-) MOFET i887b PROUCT UMMARY V (V) R (on) (Ω) MAX. I (A) a, e Q g (Typ.).76 at V G = -4.5 V -2.9-2 at V G = -2.5 V -2.5 45 at V G = -.8 V -2. 7.5 nc.32 at V G = -.5 V -.5 FEATURE TrenchFET
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- FL Weight: approx. 9. mg Packaging codes/options: 08/K per 7" reel (8 mm tape), 8K/box FEATURES Silicon epitaxial planar diode Fast switching
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance
More informationSmall Signal Fast Switching Diode FEATURES
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 DESIGN SUPPORT TOOLS click logo to get started FEATURES Silicon epitaxial planar diode Fast switching
More informationP-Channel 20 V (D-S) MOSFET
Si37L P-Channel 0 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) c Q g (Typ.) - 0 0.50 at V GS = - 4.5 V -.4 0.9 at V GS = -.5 V -.3 0.70 at V GS = -.8 V -. SOT-33 SC-70 (3-LEAS) 4.3 nc FEATURES
More informationDual High-Voltage Trench MOS Barrier Schottky Rectifier
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.53 V at I F = 5.0 A 2 TMBS esmp Series Top View PIN PIN 2 PRIMARY CHARACTERISTICS K Bottom View I F(AV) 2 x A V RRM 0 V I FSM 50
More informationSmall Signal Zener Diodes
Small Signal Zener Diodes DESIGN SUPPORT TOOLS click logo to get started FEATURES Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).3 at V G = - V - 9. - 3 3 nc.9 at V G = -. V -.8 FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET % R
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i3y PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V 3 nc.5 at V G =.5 V FEATURE Halogen-free According to IEC 9-- TrenchFET Power MOFET % R g and UI Tested
More informationPC Card (PCMCIA) Interface Switch
End of Life. Last Available Purchase Date is 3-Dec-204 Si9706DY PC Card (PCMCIA) Interface Switch FEATURES Single SO-8 Package CMOS-Logic Compatible Inputs Slow V CC Ramp Time Smart Switching Extremely
More informationN-Channel 12 V (D-S) MOSFET
New Product Si44H N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) a Q g (Typ.). at V GS = 4.5 V 4.4 at V GS =.5 V 4.3 at V GS =.8 V 4 SOT-363 SC-7 (6-LEAS) 6 3. nc FEATURES TrenchFET
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.). at V G = V.. at V G = V. 9 nc O- FEATURE Halogen-free According to IEC 9-- Available TrenchFET Power MOFET % UI Tested APPLICATION
More informationN-Channel 8 V (D-S) MOSFET
N-Channel 8 V (-) MOFET i88b Vishay iliconix PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (TYP.) 8.8 mm xxx xx.54 at V G = 4.5 V 3.5.6 at V G =.5 V 3.3.68 at V G =.8 V 3..86 at V G =.5 V.3.35 at V G =. V
More informationN-Channel 20 V (D-S) MOSFET
N-Channel 2 V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a, e Q g (TYP.) 2 mm. at V G =.5 V.5.5 at V G = 2.5 V.2.56 at V G =.8 V.7 at V G =.5 V.5 xxxx xxx MICRO FOOT x Backside View Bump ide View Marking
More informationN-Channel 40-V (D-S) MOSFET
New Product N-Channel -V (-) MOFET i2y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).75 at V G = V 2.5.9 at V G =.5 V 8.7 2 nc FEATURE Halogen-free According to IEC 29-2-2 Available TrenchFET Power
More informationP-Channel 150-V (D-S) MOSFET
i55y P-Channel 5-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) Q g (Typ.) - 5 G.295 at V G = - V - 8.9 c 23.2 nc.35 at V G = - 6 V - 8.6 c 2 3 O-8 8 7 6 5 FEATURE TrenchFET Power MOFET % R g and UI
More informationP-Channel 60-V (D-S) MOSFET
New Product P-Channel -V (-) MOFET i97by PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = - V -.7-8 nc. at V G = -. V -. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET
More informationConductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance
Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance FEATURES Long useful life: up to 5000 h at 105 C Very low ESR and highest ripple current SMD-version with base plate, lead (Pb) free reflow
More informationSmall Signal Fast Switching Diode
Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial
More informationN-Channel 30-V (D-S) MOSFET
i7y N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.). at V G = V.8 nc. at V G =. V FEATURE Halogen-free TrenchFET Power MOFET Optimized for High-ide ynchronous Rectifier Operation
More informationP-Channel 30-V (D-S) MOSFET
New Product P-Channel 3-V (-) MOFET i825y PROUCT UMMARY V (V) R (on) (Ω) I (A) d Q g (Typ.).25 at V G = - V -.9-3 29.5 nc.25 at V G = -.5 V -. FEATURE Halogen-free TrenchFET Power MOFET % R g Tested %
More informationFEATURES. Heatsink. 1 2 Pin 1 Pin 2
Ultralow V F Ultrafast Rectifier, 8 A FRED Pt esmp Series 2 SlimDPAK (TO-252AE) k Heatsink k 2 Pin Pin 2 FEATURES Ultrafast recovery time, extremely low V F and soft recovery For PFC CCM operation Low
More informationN-Channel 30-V (D-S) MOSFET
i462y N-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 3.79 at V G = V 9.3 a 8.8 nc. at V G = 4. V 7. a FEATURE Halogen-free TrenchFET Power MOFET % R g Tested % UI Tested RoH COMPLIANT
More informationN-Channel 200-V (D-S) MOSFET
iy N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A). at V G = V.. at V G =. V. FEATURE Halogen-free According to IEC 9-- efinition TrenchFET Power MOFET PWM Optimized for Low Q g and Low R g
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a high speed and high sensitive PIN photodiode with enhanced sensitivity for visible light. It is a low profile surface-mount device (SMD) including the chip with
More information4-Line BUS-Port ESD-Protection
4-Line BUS-Port ESD-Protection 2397 6 5 4 1 2 3 MARKING (example only) Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 2453 1 XX YY 211 FEATURES Ultra compact LLP75-6L package 4-line
More informationP-Channel 2.5 V (G-S) MOSFET
i3cy P-Channel 2.5 V (G-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).8 at V G = - V - 8. - 2. at V G = -.5 V -. 5 nc. at V G = - 2.5 V - FEATURE Halogen-free According to IEC 29-2-2 efinition
More informationSmall Signal Zener Diodes, Dual
Small Signal Zener Diodes, Dual DESIGN SUPPORT TOOLS Models Available PRIMARY CHARACTERISTICS 6 PARAMETER VALUE UNIT range nom.. to V Test current T specification Pulse current Circuit configuration Dual
More informationP-Channel 30-V (D-S) MOSFET
i59ay P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) ( ) I (A) d Q g (Typ.).5 at V G = - V - 29-3 nc.775 at V G = -.5 V - 23 FEATURE Halogen-free According to IEC 29-2-2 efinition TrenchFET Power MOFET
More informationSmall Signal Fast Switching Diode FEATURES PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
Small Signal Fast Switching Diode MARKING (example only) Bar = cathode marking XY = type code X Y 6 MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box
More informationSilicon PIN Photodiode
VEMD550CF Silicon PIN Photodiode DESCRIPTION VEMD550CF is a high speed and high sensitive PIN photodiode. It is a low profile surface-mount device (SMD) including the chip with a 7.5 mm 2 sensitive area
More informationSmall Signal Zener Diodes, Dual
DZ-G Series Small Signal Zener Diodes, Dual PRIMARY CHARACTERISTICS PARAMETER ALUE UNIT range nom.. to Test current T specification Pulse current Int. construction Dual common cathode FEATURES Dual silicon
More informationN-Channel 40-V (D-S) MOSFET
ir8p N-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.).5 at V G = V. at V G =.5 V FEATURE Halogen-free According to IEC 9-- efinition Q g Optimized % R g Tested % UI Tested Compliant
More informationRF Power Plate Capacitors for Higher Voltages, Class 1 Ceramic
RF Power Plate Capacitors for Higher Voltages, Class Ceramic FEATURES Low losses High reliability High voltage ratings APPLICATIONS These high quality power plate capacitors are designed for usage in high
More information1 pc Charge Injection, 100 pa Leakage CMOS 5 V/5 V/3 V 4-Channel Multiplexer ADG604
a FEATURES 1 pc Charge Injection (Over the Full Signal Range) 2.7 V to 5.5 V ual Supply 2.7 V to 5.5 ingle Supply Automotive Temperature Range: 4 C to +125 C 1 pa Max @ 25 C Leakage Currents 85 Typ On
More informationCMOS, +1.8 V to +5.5 V/ 2.5 V, 2.5 Low-Voltage, 8-/16-Channel Multiplexers ADG706/ADG707 REV. A
a FEATURES +.8 V to +. ingle Supply. V ual Supply. ON Resistance. ON Resistance Flatness pa Leakage Currents ns Switching Times Single -to- Multiplexer AG ifferential 8-to- Multiplexer AG 8-Lead TSSOP
More informationN-Channel 20-V (D-S) Fast Switching MOSFET
N-Channel -V (-) Fast witching MOFET i7n PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.) 8 7.53 at V G = V..78 at V G = 4.5 V 7.4 PowerPAK -8 6 5 3.3 mm 3.3 mm Bottom View 3 G 4 4 nc Ordering Information:
More informationHigh Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier
High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0. V at I F = A FEATURES Trench MOS Schottky technology Available 8 Low forward voltage drop, low power losses High
More informationonlinecomponents.com
a FEATURES +.8 V to +. ingle Supply 2. V ual Supply 2. ON Resistance. ON Resistance Flatness pa Leakage Currents 4 ns Switching Times Single 6-to- Multiplexer AG76 ifferential 8-to- Multiplexer AG77 28-Lead
More informationHigh Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
VP0 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.43 V at I F = 5 A TMBS esmp Series TO-77A (SMPC) Anode Cathode Anode FEATURES Very low profile - typical height
More informationDual Low-Voltage Trench MOS Barrier Schottky Rectifier
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.3 V at I F = 5.0 A 2 TMBS esmp Series SMPD (TO-263AC) Top View PIN PIN 2 K K Bottom View HEATSINK FEATURES Trench MOS Schottky technology
More informationZener Diodes FEATURES APPLICATIONS
Zener Diodes SMA (DO-4AC) PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 3.3 to 00 V Test current I ZT.7 to 80 ma V BR 5. to 95 V V WM 4.7 to 90 V P PPM 40 W T J max. 50 C V Z specification
More informationSmall Signal Zener Diodes
Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V FEATURES Very sharp reverse characteristic Low reverse current level Very high stability Low noise TZMC-
More informationSilicon PIN Photodiode, RoHS Compliant
Silicon PIN Photodiode, RoHS Compliant DESCRIPTION 948642 is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the
More informationV20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V200S-E3, VF200S-E3, VB200S-E3, VI200S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.446 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low forward
More informationSilicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION VBPW34S VBPW34SR 21733 VBPW34S and VBPW34SR are high speed and high sensitive PIN photodiodes. It is a surface mount device (SMD) including the chip with a 7.5 mm 2 sensitive
More informationLow-Power, High-Speed CMOS Analog Switches
Low-Power, High-Speed MOS Analog es G41/43/4 ESRIPTION The G41/43/4 monolithic analog switches were designed to provide precision, high performance switching of analog signals. ombining low power (.3 µw,
More informationFilter Inductors, High Current, Radial Leaded
Filter Inductors, High Current, Radial Leaded ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with zero DC current Dielectric: 2500 V RMS between winding and 0.250" [6.35 mm] of insulating covering
More informationAluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical
Aluminum Electrolytic Capacitors SMD (Chip) Long Life Vertical FEATURES Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing SMD-version with base plate, vertical construction
More informationTrench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V F = 0.3 V at I F = 5 A TMBS esmp Series FEATURES Trench MOS Schottky technology Very low profile - typical height of.7
More informationRF Power Feed-Through Capacitors with Conductor Rod, Class 1 Ceramic
DB 06030, DB 06040, DB 06060 RF Power Feed-Through Capacitors with Conductor Rod, Class Ceramic FEATURES Small size Geometry minimizes inductance Wide range of capacitance values APPLICATIONS Filtering
More informationQuad SPST CMOS Analog Switches
G444, G44 Quad SPST MOS Analog Switches APPLIATIONS Audio switching Battery powered systems ata acquisition Sample-and-hold circuits Telecommunication systems Automatic test equipment Single supply circuits
More informationV30100S-E3, VF30100S-E3, VB30100S-E3, VI30100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier
V3000S-E3, VF3000S-E3, VB3000S-E3, VI3000S-E3 High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V F = 0.39 V at I F = 5 A TO-220AB TMBS ITO-220AB FEATURES Trench MOS Schottky technology Low
More informationN-Channel 20 V (D-S) MOSFET
Si3V N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).8 at V GS =. V 7.9.3 at V GS =. V 7..38 at V GS =.8 V.8 TSOP- Top View.7 nc FEATURES Halogen-free According to IEC 9--
More informationSurface Mount Multilayer Ceramic Chip Capacitors for Ultra Small Commodity Applications
Surface Mount Multilayer Ceramic Chip Capacitors for Ultra Small Commodity Applications FEATURES High capacitance in unit size High precision dimensional tolerances Suitably used in high-accuracy automatic
More informationSmall Signal Zener Diodes
Small Signal Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT V Z range nom. 2.4 to 75 V Test current I ZT 2.5; 5 ma V Z specification Pulse current Int. construction Single FEATURES Saving space
More information