Powered-off Protection, 1, 1.8 V to 5.5 V, SPDT Analog Switch (2:1 Multiplexer)

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1 DGE Powered-off Protection,,.8 V to 5.5 V, SPDT Analog Switch (: Multiplexer) DESCRIPTION The DGE is a high performance single-pole, double-throw (SPDT) analog switch designed for.8 V to 5.5 V operation with a single power rail. Fabricated with high density CMOS technology, the device achieves low on resistance of at a 5 V power supply, low power consumption, and fast switching speeds. The DGE can handle both analog and digital signals and permits signals with amplitudes of up to to be transmitted in either direction. Its control logic inputs can go over up to 5.5 V. It features break before make switching performance. Its -3 db bandwidth is typically 6 MHz. A powered-off protection circuit is built into the switch to prevent an abnormal current flow from pin to during the power-down condition. Each output pin can withstand greater than 7 kv (human body model). Operation temperature is specified from -4 C to +85 C. The DGE is available in SC-7-6L package. FEATURES Low switch on-resistance ( ).65 V to 5.5 V single supply operation Available Isolation in powered-off mode Available Control logic inputs can go over Low charge injection (5 pc) Low total harmonic distortion Break before make switching Latch-up performance exceeds 3 ma per JESD 78 ESD tested - 7 V human body model (JS-) - V charge device model (JS-) Material categorization: for definitions of compliance please see Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS Smartphones and tablets Consumer and computing Portable instrumentation Medical equipment FUNCTIONAL BLOCK DIAGRAM AND P CONFIGURATION SC NO (source ) Pin HXXX 3 Top view Device marking: H 4 NC (source ) Device marking: HXXX XXX = date / lot traceability code TRUTH TABLE LOGIC NC NO On Off Off On ORDERG FORMATION TEMP. RANGE PACKAGE PART NUMBER -4 C to +85 C SC-7-6 DGEDL-T-GE3 S8-45-Rev. B, 3-Apr-8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 DGE ABSOLUTE MAXIMUM RATGS PARAMETER LIMIT UNIT,, NC, NO, reference to -.3 to 6 V Continuous current (NO, NC, and pins) ± Peak current (pulsed at ms, % duty cycle) ± 3 ma Storage temperature (D suffix) -65 to +5 C Power dissipation (packages) a 6-pin SO-7 b 5 mw ESD / HBM JS- 7 ESD / CDM JS- V Latch up Per JESD78 with.5 x voltage clamp 3 ma Notes a. All leads welded or soldered to PC board b. Derate 3. mw/ C above 7 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS ( = 5 V) PARAMETER SYMBOL Analog Switch TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = 5 V, ± %, V =.8 V or.4 V e TEMP. a LIMITS -4 C to +85 C UNIT M. b TYP. c MAX. b Analog signal range d V NO, V NC V Full - V = 4.5 V, Room -.6 On-resistance R ON V =.5 V /.5 V, I NO, I NC = ma Full d - R ON flatness d R ON flatness = 4.5 V, Room -..5 V = V to, I NO, I NC = ma R ON match d R ON Room I NO(off) Room -5-5 I NC(off) = 5 V Switch off leakage current f Full - - V NO, V NC =.5 V / 4.5 V, V = 4.5 V /.5 V Room -5-5 I (off) na Full d - - Channel-on leakage current f = 5 V, Room -5-5 I (on) V NO, V NC = V =.5 V / 4.5 V Full d - - Power down leakage I (PD) = V, V = 4.5 V, V = Full d - - μa Digital Control Input high voltage V H Full Input low voltage V L Full V Input capacitance d C Full pf Input current f I L or I H V = V or Full - - μa Dynamic Characteristics Turn-on time d t ON V NO or V NC = 3 V, Room Full d Turn-off time d t OFF R L = 3, C L = 35 pf Room ns Full d Break-before-make time d t d Room 5 - Charge injection d Q J C L = nf, V GEN = V, R GEN = Room pc Off-isolation d OIRR Room R L = 5, C L = 5 pf, f = MHz Crosstalk d X TALK Room db N O, N C off capacitance d C NO(off) Room C NC(off) V = V or, f = MHz pf Channel-on capacitance d C ON Room Power Supply Power supply current I+ V = V or Full -.3 μa S8-45-Rev. B, 3-Apr-8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 DGE SPECIFICATIONS ( = 3 V) PARAMETER SYMBOL Analog Switch TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = 3 V, ± %, V =.4 V or.4 V e TEMP. a LIMITS -4 C to 85 C UNIT M. b TYP. c MAX. b Analog signal range d V NO, V NC V Full - V =.7 V, Room On-resistance R ON V =. V /.5 V, I NO I NC = ma Full d R ON flatness d R ON flatness =.7 V, Room V = V to, I NO, I NC = ma R ON match d R ON Room I NO(off) Room -5-5 I NC(off) = 3.3 V Switch off leakage current f Full -5-5 V NO, V NC = V / 3 V, V = 3 V / V Room -5-5 I (off) na Full d -5-5 Channel-on leakage current f = 3.3 V, Room -5-5 I (on) V NO, V NC = V = V / 3 V Full d -5-5 Digital Control Input high voltage V H Full Input low voltage V L Full V Input capacitance d C Full pf Input current f I L or I H V = V or Full - - μa Dynamic Characteristics Turn-on time d Room - 4 t ON Full d V NO or V NC = V, ns Turn-off time d Room t OFF R L = 3, C L = 35 pf Full d Break-before-make time d t d Room 7 - Charge injection d Q J C L = nf, V GEN = V, R GEN = Room pc Off-isolation d OIRR Room R L = 5, C L = 5 pf, f = MHz Crosstalk d X TALK Room db Bandwidth d BW Room MHz N O, N C off capacitance d C NO(off) Room C NC(off) V = V or, f = MHz pf Channel-on capacitance d C ON Room Power Supply Power supply current I+ V = V or Full -. μa S8-45-Rev. B, 3-Apr-8 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 DGE SPECIFICATIONS ( = V) PARAMETER Analog Switch SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED = V, ± %, V =.4 V or.6 V e TEMP. a LIMITS -4 C to +85 C UNIT M. b TYP. c MAX. b Analog signal range d V NO, V NC, V Full - V =.8 V, V On-resistance R =. V /.9 V Room - 5 ON I NO, I NC = ma Full d R ON flatness d R ON flatness =.8 V, V = V to, Room I NO, I NC = ma R ON match d R ON Room I NO(off) Room I NC(off) =. V Switch off leakage current f Full -5-5 V NO, V NC =.5 V /.5 V, V =.5 V /.5 V Room I (off) na Full d -5-5 Channel-on leakage current f =. V, Room I (on) V NO, V NC = V =.5 V /.5 V Full d -5-5 Digital Control Input high voltage V H Full Input low voltage V L Full V Input capacitance d C Full pf Input current f I L or I H V = V or Full - - μa Dynamic Characteristics Turn-on time d Room t ON Full d V NO or V NC =.5 V, ns Turn-off time d Room t OFF R L = 3, C L = 35 pf Full d Break-before-make time d t d Room 7 - Charge injection d Q J C L = nf, V GEN = V, R GEN = Room - - pc Off-isolation d OIRR Room R L = 5, C L = 5 pf, f = MHz Crosstalk d X TALK Room db N O, N C off capacitance d C NO(off) Room C NC(off) V = V or, f = MHz pf Channel-on capacitance d C ON Room Power Supply Power supply current I+ V = V or Full -. μa Notes a. Room = 5 C, full = as determined by the operating suffix b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet c. Typical values are for design aid only, not guaranteed nor subject to production testing d. Guarantee by design, nor subjected to production test e. V = input voltage to perform proper function f. Guaranteed by 5 V leakage testing, not production tested S8-45-Rev. B, 3-Apr-8 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 DGE TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) R ON - On-Resistance (Ω) = +.8 V = +.7 V = +3.3 V I NO/NC = - ma = +4.5 V R ON - On-Resistance (Ω) C +5 C -4 C = +5 V V - Analog Voltage (V) = +4.5 V I NO/NC = ma 3 4 V - Analog Voltage (V) R ON vs. V and Supply Voltage R ON vs. V and Temperature R ON - On-Resistance (Ω) C +85 C = +.8 V I NO/NC = ma +5 C.5.5 V - Analog Voltage (V) Leakage Current (pa) I NO/NC(OFF),V =.5 V, V NO/NC =.5 V I (OFF),V =.5 V, V NO/NC =.5 V I (ON),V =.5 V I NO/NC(OFF),V =.5 V, V NO/NC =.5 V I (OFF),V =.5 V, V NO/NC =.5 V I (ON),V =.5 V = +. V R ON vs. V and Temperature Leakage Current vs. Temperature R ON - On-Resistance (Ω) = +.7 V I NO/NC = ma +85 C +5 C -4 C V - Analog Voltage (V) Leakage Current (pa) I (ON),V = 3 V I NO/NC(OFF),V = V, V NO/NC = 3 V I (OFF),V = V, V NO/NC = 3 V I (ON),V = V I NO/NC(OFF),V = 3 V, V NO/NC = V I (OFF),V = 3 V, V NO/NC = V = +3.3 V R ON vs. V and Temperature Leakage Current vs. Temperature S8-45-Rev. B, 3-Apr-8 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 DGE TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Leakage Current (pa) I (ON),V = 4.5 V I NO/NC(OFF),V =.5 V, V NO/NC = 4.5 V I NO/NC(OFF),V = 4.5 V, V NO/NC =.5 V I (ON),V =.5 V I - (OFF),V = 4.5 V, V NO/NC =.5 V I (OFF),V =.5 V, V NO/NC = 4.5 V - = +5 V Loss, OIRR, X TALK (db) Loss - X TALK - -3 OIRR = +5 V - K M M M G Frequency (Hz) Leakage Current vs. Temperature Insertion Loss, Off-Isolation Crosstalk vs. Frequency I+ - Supply Current (na) = +3 V V = or = +5 V V = or Supply Current vs. Temperature I+ - Supply Current (μa).... = + V = +3 V = +5 V. K K M M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency 5 5 I+ - Supply Current (μa) = +5 V V =.6 V t ON, t OFF - Switching Time (ns) 45 4 = + V, t ON 35 3 = +5 V, t ON 5 = + V, t OFF = +3 V, t ON 5 = +3 V, t OFF 5 = +5 V, t OFF -5 5 Supply Current vs. Temperature Switching Time vs. Temperature and Supply Voltage S8-45-Rev. B, 3-Apr-8 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 DGE TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) V - Switching Threshold (V) C to +85 C V H V L Supply Voltage (V) I+ - Supply Current (μa) = 3 V = 5 V = V V (V) Switching Threshold vs. Supply Voltage Supply Current vs. Enable Input Voltage Q J - Charge Injection (pc) = 5 V = V = 3 V V NO/NC - Analog Voltage (V) I (PD) Power Down Leakage Current (na) = V =, V = +3 V Charge Injection vs. Analog Voltage Power Down Leakage Current vs. Temperature I (PD) Power Down Leakage Current (na) = V = 85 C 5 C 4 6 V (V) -4 C Power Down Leakage Current vs. V S8-45-Rev. B, 3-Apr-8 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 DGE TEST CIRCUITS Switch Input Logic Input NO or NC Switch Output R L 3 Ω V OUT C L 35 pf Logic Input Switch Output V H V L V t ON 5 % t r < 5 ns t f < 5 ns.9 x V OUT t OFF C L (includes fixture and stray capacitance) R V OUT = V L R L + R ON Logic "" = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. Fig. - Switching Time Logic Input V H t r < 5 ns t f < 5 ns V NO NO V O V L V NC NC R L 3 Ω C L 35 pf V NC = V NO V O 9 % Switch Output V t D t D C L (includes fixture and stray capacitance) Fig. - Break-Before-Make Interval V gen + R gen NC or NO V OUT C L = nf V OUT On ΔV OUT Off On V = - Q = ΔV OUT x C L depends on switch configuration: input polarity determined by sense of switch. Fig. 3 - Charge Injection S8-45-Rev. B, 3-Apr-8 8 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 DGE TEST CIRCUITS nf NC or NO V,.4 V R L V Off Isolation = log V NO/ NC Analyzer Fig. 4 - Off-Isolation nf Meter V,.4 V NC or NO HP49A Impedance Analyzer or Equivalent f = MHz Fig. 5 - Channel Off / On Capacitance maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see S8-45-Rev. B, 3-Apr-8 9 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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