P-Channel 30-V (D-S) MOSFET

Transcription

1 P-Channel 3-V (-) MOFET TM443 PROUCT UMMARY V (V) - 3 R (on) ( ) at V G = - V.6 R (on) ( ) at V G = - 4. V.22 I (A) - 8 Configuration ingle O-8 FEATURE Halogen-free According to IEC efinition TrenchFET Power MOFET % R g and UI Tested Compliant to RoH irective 22/9/EC APPLICATION Adaptor witch Notebook G 3 6 G 4 Top View P-Channel MOFET ABOLUTE MAXIMUM RATING (, unless otherwise noted) PARAMETER YMBOL LIMIT UNIT rain-ource Voltage V - 3 Gate-ource Voltage V G ± 2 V Continuous rain Current - 8 I Continuous ource Current (iode Conduction) I A Pulsed rain Current a I M - 6 ingle Pulse Avalanche Current I A - 2 L =. mh ingle Pulse Avalanche Energy E A 3 mj 6.8 Maximum Power issipation a P 2.3 W Operating Junction and torage Temperature Range T J, T stg - to + 7 C THERMAL REITANCE RATING PARAMETER YMBOL LIMIT UNIT Junction-to-Ambient PCB Mount b R thja 8 Junction-to-Foot (rain) R thjf 22 Notes: a. urface mounted on " x " FR4 board. b. t = s. c. Maximum under steady state conditions is 8 C/W. d. Based on. C/W

2 PECIFICATION (, unless otherwise noted) PARAMETER YMBOL TET CONITION MIN. TYP. MAX. UNIT tatic rain-ource Breakdown Voltage V V G =, I = - 2 μa Gate-ource Threshold Voltage V G(th) V = V G, I = - 2 μa Gate-ource Leakage I G V = V, V G = ± 2 V - - ± na Zero Gate Voltage rain Current I V G = V V = - 3 V, T J = 2 C V G = V V = - 3 V Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V G = V V = - 3 V, T J = 7 C On-tate rain Current a I (on) V G = - V V - V A rain-ource On-tate Resistance a R (on) V G = - V I = - 8 A V G = - V I = - 8 A, T J = 2 C V G = - V I = - 8 A, T J = 7 C V G = - 4. V I = - 6 A Forward Transconductance b g fs V = - V, I = - 8 A ynamic b Input Capacitance C iss Output Capacitance C oss V G = V V = - V, f = MHz Reverse Transfer Capacitance C rss Total Gate Charge c Q g Gate-ource Charge c Q gs V G = - V V = - V, I = A Gate-rain Charge c Q gd Gate Resistance R g f = MHz 2-7 Turn-On elay Time c t d(on) Rise Time c t r V = - V, R L = - 9 Turn-Off elay Time c t d(off) I - A, V GEN = - V, R g = Fall Time c t f - ource-rain iode Ratings and Characteristics b TM443 Pulsed Current a I M A Forward Voltage V I F = - 8 A, V G = V V μa pf nc ns tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2

3 TYPICAL CHARACTERITIC (T A = 2 C, unless otherwise noted) TM V G = V thru V 4 I - rain Current (A) V G = 4 V I - rain Current (A) V G = 3 V V -rain-to-ource Voltage (V) Output Characteristics T C = - C V G - Gate-to-ource Voltage (V) Transfer Characteristics 4. g fs -Transconductance () T C = - C R (on) -On-Resistance (Ω) V G = 4. V V G = V 2 2 I -rain Current (A) Transconductance I - rain Current (A) On-Resistance vs. rain Current 3 C - Capacitance (pf) 2 2 C iss C oss V G - Gate-to-ource Voltage (V) I = 4.6 A C rss V -rain-to-ource Voltage (V) Capacitance Q g -Total Gate Charge (nc) Gate Charge 3

4 TYPICAL CHARACTERITIC (T A = 2 C, unless otherwise noted) TM R (on) -On-Resistance (Normalized) I = 8 A V G = V V G = 4. V I - ource Current (A).. T J = C T J = 2 C T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature V - ource-to-rain Voltage (V) ource rain iode Forward Voltage. -3 I = ma V G(th) Variance (V) I = 2 μa I = ma V -rain-to-ource Voltage (V) T J -Temperature( C) Threshold Voltage T J - Junction Temperature ( C) rain ource Breakdown vs. Junction Temperature I M Limited I - rain Current (A). Limited by R (on)* ingle Pulse BV Limited µs ms ms ms s s, C... V - rain-to-ource Voltage (V) * V G minimum V G at which R (on) is specified afe Operating Area 4

5 THERMAL RATING (T A = 2 C, unless otherwise noted) TM443 uty Cycle =. Normalized Effective Transient Thermal Impedance..2.. t t 2 t.2. uty Cycle, = t 2 2. Per Unit Base =R thja = 8 C/W 3. T JM -T A =P M Z (t) thja ingle Pulse 4. urface Mounted quare Wave Pulse uration (s) Notes: P M Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. uty Cycle = ingle Pulse quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (2 C) - Normalized Transient Thermal Impedance Junction-to-Foot (2 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.

6 Package Information OIC (NARROW): 8-LEA JEEC Part Number: M E H A.2 mm (Gage Plane) h x 4 C All Leads e B A L q. mm.4" IM MILLIMETER INCHE Min Max Min Max A A B C E e.27 BC. BC H h L q ECN: C-627-Rev. I, -ep-6 WG: 498

7 Application Note RECOMMENE MINIMUM PA FOR O-8.72 (4.369).28 (.7) APPLICATION NOTE.47 (.94).246 (6.248).2 (3.86).22 (.9). (.27) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index

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