PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET
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1 Rev. 7 November 29 Product data sheet. Product profile. General description SiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only..2 Features and benefits Low conduction losses due to low on-state resistance Suitable for very low gate drive sources.3 Applications Computer motherboards DC-to-DC convertors Switched-mode power supplies.4 Quick reference data Table. Quick reference Symbol Parameter Conditions Min Typ Max Unit V DS drain-source voltage T j 25 C; T j 5 C V I D drain current T sp =25 C; V GS =4.5V; A see Figure and 3 P tot total power dissipation T sp =25 C; see Figure W Dynamic characteristics Q GD gate-drain charge V GS = 2.5 V; I D =3A; V DS =V; T j =25 C; see Figure nc Static characteristics R DSon drain-source V GS = 2.5 V; I D =5A; mω on-state resistance T j =25 C; see Figure 9 and V GS =.8 V; I D =5A; mω T j = 25 C; see Figure V GS = 4.5 V; I D =5A; T j =25 C; see Figure 9 and mω
2 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol S source 2 S source 8 5 D 3 S source 4 G gate G 5 D drain 4 mbb76 S 6 D drain SOT96- (SO8) 7 D drain 8 D drain 3. Ordering information Table 3. Ordering information Type number Package Name Description Version SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage T j 25 C; T j 5 C - 2 V V GS gate-source voltage - V I D drain current T sp =25 C; V GS = 4.5 V; see Figure and 3-32 A I DM peak drain current T sp =25 C; t p µs; pulsed; see Figure 3-6 A P tot total power dissipation T sp =25 C; see Figure W T stg storage temperature - 5 C T j junction temperature C Source-drain diode I S source current T sp =25 C A I SM peak source current T sp =25 C; t p µs; pulsed - 3 A _ Product data sheet Rev. 7 November 29 2 of 2
3 2 3aa25 2 3aa7 I der (%) P der (%) T sp ( C) T sp ( C) Fig. Normalized continuous drain current as a function of solder point temperature Fig 2. Normalized total power dissipation as a function of solder point temperature 2 3ai63 I D (A) Limit R DSon = V DS /I D t p = µs ms ms DC ms 2 V DS (V) Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage _ Product data sheet Rev. 7 November 29 3 of 2
4 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-sp) thermal resistance from mounted on a metal clad board; K/W junction to solder point see Figure 4 2 3ai62 Z th(j-sp) (K/W) δ = P t p δ = T.2 single pulse t p t T t p (s) Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration _ Product data sheet Rev. 7 November 29 4 of 2
5 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V (BR)DSS drain-source I D =25µA; V GS =V; T j =25 C V breakdown voltage V GS(th) gate-source threshold I D =ma; V DS = V GS ; T j = 5 C; see Figure V voltage I D =ma; V DS = V GS ; T j =25 C; see Figure V I DSS drain leakage current V DS =2V; V GS =V; T j = 5 C µa V DS =2V; V GS =V; T j = 25 C -.5 µa I GSS gate leakage current V GS =8V; V DS =V; T j = 25 C - na V GS =-8V; V DS =V; T j = 25 C - na R DSon drain-source on-state V GS =2.5V; I D =5A; T j = 25 C; see Figure mω resistance and V GS =.8V; I D =5A; T j = 25 C; see Figure mω V GS =4.5V; I D =5A; T j = 25 C; see Figure 9 and mω Dynamic characteristics Q G(tot) total gate charge I D =3A; V DS =V; V GS =25V; T j =25 C; nc see Figure Q GS gate-source charge I D =3A; V DS =V; V GS =2.5V; T j =25 C; - - nc Q GD gate-drain charge see Figure nc C iss input capacitance V DS =2V; V GS = V; f = MHz; T j =25 C; pf C oss output capacitance see Figure pf C rss reverse transfer pf capacitance t d(on) turn-on delay time V DS =V; R L =Ω; V GS =4.5V; ns t r rise time R G(ext) =6Ω; T j =25 C ns t d(off) turn-off delay time ns t f fall time ns g fs forward transconductance V DS =5V; I D =A S Source-drain diode V SD source-drain voltage I S =3A; V GS =V; T j = 25 C; see Figure V t rr reverse recovery time I S =A; di S /dt = -7 A/µs; V GS =V; ns Q r recovered charge V DS =25V; T j =25 C nc _ Product data sheet Rev. 7 November 29 5 of 2
6 3 I D (A) 4.5 V 2.5 V 2 V 3ai64.5 V 3 I D (A) V DS > I D x R DSon 3ai V. V T j = 5 C 25 C V GS = V V DS (V) V GS (V) Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values 3ai7 3ai7 I D (A) 2 V GS(th) (V).8 typ 3 min typ min V GS (V) T j ( C) Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Gate-source threshold voltage as a function of junction temperature _ Product data sheet Rev. 7 November 29 6 of 2
7 3ai65 2 3af8 R DSon (mw) 8 T j = 25 C a.5 6 V GS =.5 V 4 2 V 2.5 V 4.5 V I D (A) T j ( C) Fig 9. Drain-source on-state resistance as a function of drain current; typical values Fig. Normalized drain-source on-state resistance factor as a function of junction temperature 5 3ai69 4 3ai68 V GS (V) 4 V DD = V I D = 3 A T j = 25 C C (pf) C iss C oss C rss Q G (nc) 2 2 V DS (V) Fig. Gate-source voltage as a function of gate charge; typical values Fig 2. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values _ Product data sheet Rev. 7 November 29 7 of 2
8 3 I S (A) V GS = V 3ai67 2 T j = 5 C 25 C V SD (V) Fig 3. Source current as a function of source-drain voltage; typical values _ Product data sheet Rev. 7 November 29 8 of 2
9 7. Package outline SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96- D E A X c y H E v M A Z 8 5 Q A 2 A (A ) 3 A pin index θ L p 4 L e b p w M detail X mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max A A 2 A 3 b p c D () E (2) e H () E L L p Q v w y Z Notes. Plastic or metal protrusions of.5 mm (.6 inch) maximum per side are not included. 2. Plastic or metal protrusions of.25 mm (. inch) maximum per side are not included θ.7.3 o 8 o.28.2 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT96-76E3 MS Fig 4. Package outline SOT96- (SO8) _ Product data sheet Rev. 7 November 29 9 of 2
10 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes _ 297 Product data sheet - - _ Product data sheet Rev. 7 November 29 of 2
11 9. Legal information 9. Data sheet status Document status [][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Nexperia does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Nexperia sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, Nexperia does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes Nexperia reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use Nexperia products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia accepts no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 634) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Nexperia. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.. Contact information For more information, please visit: For sales office addresses, please send an to: salesaddresses@nexperia.com _ Product data sheet Rev. 7 November 29 of 2
12 . Contents Product profile General description Features and benefits Applications Quick reference data Pinning information Ordering information Limiting values Thermal characteristics Characteristics Package outline Revision history Legal information Data sheet status Definitions Disclaimers Trademarks Contact information For more information, please visit: For sales office addresses, please send an to: salesaddresses@nexperia.com Date of release: 7 November 29
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