Description Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units

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1 P IRF734PbF Generation V Technoogy Utra Low On-Resistance ua P-Channe MOSFET Surface Mount Fuy vaanche Rated Lead-Free S G S2 G2 HEXFET Power MOSFET V SS = -20V R S(on) = 0.058Ω escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow on-resistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. Top View The SO-8 has been modified through a customized eadframe for enhanced therma characteristics and mutipe-die capabiity making it idea in a variety of power appications. With these improvements, mutipe devices can be used in an appication with dramaticay reduced board space. The package is designed for vapor phase, infra red, or wave sodering techniques. SO-8 bsoute Maximum Ratings ( T = 25 C Uness Otherwise Noted) Symbo Maximum Units rain-source Votage V S -20 Gate-Source Votage V GS ± 2 V T = 25 C -5.3 Continuous rain Current I T = 70 C -4.3 Pused rain Current I M -2 Continuous Source Current (iode Conduction) I S -2.5 Maximum Power issipation T = 25 C 2.0 P T = 70 C.3 W Singe Puse vaanche Energy E S 50 mj vaanche Current I R -2.9 Repetitive vaanche Energy E R 0.20 mj Peak iode Recovery dv/dtƒ dv/dt -5.0 V/ ns Junction and Storage Temperature Range T J, T STG -55 to + 50 C Therma Resistance Ratings Parameter Symbo Limit Units Maximum Junction-to-mbient R θj 62.5 C/W /7/04

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage -20 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Votage Temp. Coefficient 0.03 V/ C Reference to 25 C, I = -m R S(on) Static rain-to-source On-Resistance V GS = -4.5V, I = -2.9 Ω V GS = -2.7V, I = -.5 V GS(th) Gate Threshod Votage V V S = V GS, I = -250µ g fs Forward Transconductance 5.9 S V S = -V, I = -.5 I SS rain-to-source Leakage Current -.0 V S = -6V, V GS = 0V µ -25 V S = -6V, V GS = 0V, T J = 55 C I GSS Gate-to-Source Forward Leakage 0 V GS = -2V n Gate-to-Source Reverse Leakage -0 V GS = 2V Q g Tota Gate Charge 9 29 I = -2.9 Q gs Gate-to-Source Charge nc V S = -6V Q gd Gate-to-rain ("Mier") Charge V GS = -4.5V, See Fig. t d(on) Turn-On eay Time 5 22 V = -V t r Rise Time I = -2.9 ns t d(off) Turn-Off eay Time R G = 6.0Ω t f Fa Time R = 3.4Ω C iss Input Capacitance 780 V GS = 0V C oss Output Capacitance 470 pf V S = -5V C rss Reverse Transfer Capacitance 240 ƒ =.0MHz, See Fig. 5 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo -2.5 (Body iode) showing the I SM Pused Source Current integra reverse G -2 (Body iode) p-n junction diode. V S iode Forward Votage V T J = 25 C, I S = -2.9, V GS = 0V ƒ t rr Reverse Recovery Time 47 7 ns T J = 25 C, I F = -2.9 Q rr Reverse RecoveryCharge nc di/dt = 0/µs ƒ S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 35mH R G = 25Ω, I S = ƒ I S -2.9, di/dt -77/µs, V V (BR)SS, T J 50 C Puse width 300µs; duty cyce 2%. Surface mounted on FR-4 board, t sec.

3 -I, rain-to-source Current () 0 VGS TOP -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -.50V -.50V 20µs PULSE WITH T J = 25 C V S, rain-to-source Votage (V) -I, rain-to-source Current () 0 VGS TOP -7.50V -4.50V -4.00V -3.50V -3.00V -2.70V -2.00V BOTTOM -.50V -.50V 20µs PULSE WITH T J = 50 C V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics 0 0 -I, rain-to-source Current () T J = 25 C T J = 50 C -I S, Reverse rain Current () T J = 50 C T J = 25 C V S= -V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) V GS = 0 V V S,Source-to-rain Votage (V) Fig 3. Typica Transfer Characteristics Fig 4. Typica Source-rain iode Forward Votage

4 R S(on), rain-to-source On Resistance (Normaized) I = -2.9 V GS = -4.5V T J, Junction Temperature ( C) R S(on), rain-to-source On Resistance ( Ω ) V GS = -2.7V I, rain Current () V GS = -4.5V Fig 5. Normaized On-Resistance Vs. Temperature Fig 6. Typica On-Resistance Vs. rain Current R S(on), rain-to-source On Resistance ( Ω ) V GS I = -5.3, Gate-to-Source Votage (V) E S, Singe Puse vaanche Energy (mj) I TOP BOTTOM Starting T, Junction Temperature ( J C) Fig 7. Typica On-Resistance Vs. Gate Votage Fig 8. Maximum vaanche Energy Vs. rain Current

5 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd C iss C oss C rss -V GS, Gate-to-Source Votage (V) I = -2.9 V S = -6V 0 0 -V S, rain-to-source Votage (V) Q G, Tota Gate Charge (nc) Fig 9. Typica Capacitance Vs. rain-to-source Votage Fig. Typica Gate Charge Vs. Gate-to-Source Votage 0 Therma Response (Z thj ) Notes: SINGLE PULSE (THERML RESPONSE). uty factor = t / t 2 2. Peak T J= P M x Z thj + T t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-mbient

6 SO-8 Package Outine imensions are shown in miimeters (inches) E 6 6X e B H 0.25 [.0] INCHES IM MIN MX b MILLIMETERS MIN MX c E e.050 BSIC.27 BSIC e.025 BSIC BSIC H K L y e C y K x 45 8X b 0.25 [.0] C B 0. [.004] 8X L 7 8X c NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENS ION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES ]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO S UBS TRTE [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking Information (Lead-Free) EXMPLE : THIS IS N IRF7 (MOSFET ) INTERNTIONL RECTIFIER LOGO XXXX F7 TE COE (YWW) P = ESIGNTES LE-FREE PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = S S EMB LY S IT E COE LOT COE PRT NUMBER

7 SO-8 Tape and Ree imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) ata and specifications subject to change without notice. This product has been designed and quaified for the Consumer market. Quaifications Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, US Te: (3) TC Fax: (3) Visit us at for saes contact information./04

Si4435DYPbF HEXFET Power MOSFET

Si4435DYPbF HEXFET Power MOSFET P- 9533 Si4435YPbF HEXFET Power MOSFET Utra Low On-Resistance P-Channe MOSFET Surface Mount vaiabe in Tape & Ree Lead-Free S S S G 2 3 8 7 6 4 5 V SS = -30V R S(on) = 0.020Ω escription These P-channe HEXFET