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2 dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G PD 9482C IRF9530N HEXFET Power MOSFET D S V DSS = 0V R DS(on) = 0.20Ω I D = 4 The TO220 package is universay preferred for a commerciaindustria appications at power dissipation eves to approximatey 50 watts. The ow therma TO220B resistance and ow package cost of the TO220 contribute to its wide acceptance throughout the industry. bsoute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain V 4 I T C = 0 C Continuous Drain V I DM Pused Drain Current 56 P C = 25 C Power Dissipation 79 W Linear Derating Factor 0.53 W/ C GatetoSource Votage ± 20 V E S Singe Puse vaanche Energy 250 mj I R vaanche Current 8.4 E R Repetitive vaanche Energy 7.9 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 632 or M3 screw bf in (.N m) Therma Resistance Parameter Typ. Max. Units R θjc JunctiontoCase.9 R θcs CasetoSink, Fat, Greased Surface 0.50 C/W R θj Junctiontombient 62 5/3/98
3 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Votage 0 V = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Votage Temp. Coefficient 0. V/ C Reference to 25 C, I D = m R DS(on) Static DraintoSource OnResistance 0.20 Ω = V, I D = 8.4 (th) Gate Threshod Votage V V DS =, I D = 250µ g fs Forward Transconductance 3.2 S V DS = 50V, I D = 8.4 I DSS DraintoSource Leakage Current 25 V µ DS = 0V, = 0V 250 V DS = 80V, = 0V, T J = 50 C I GSS GatetoSource Forward Leakage 0 = 20V n GatetoSource Reverse Leakage 0 = 20V Q g Tota Gate Charge 58 I D = 8.4 Q gs GatetoSource Charge 8.3 nc V DS = 80V Q gd GatetoDrain ("Mier") Charge 32 = V, See Fig. 6 and 3 t d(on) TurnOn Deay Time 5 V DD = 50V t r Rise Time 58 I D = 8.4 ns t d(off) TurnOff Deay Time 45 R G = 9.Ω t f Fa Time 46 R D = 6.2Ω, See Fig. Between ead, L D Interna Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 760 = 0V C oss Output Capacitance 260 pf V DS = 25V C rss Reverse Transfer Capacitance 70 ƒ =.0MHz, See Fig. 5 D S SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbo 4 (Body Diode) showing the I SM Pused Source Current integra reverse G 56 (Body Diode) pn junction diode. S V SD Diode Forward Votage.6 V T J = 25 C, I S = 8.4, = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 8.4 Q rr Reverse RecoveryCharge nc di/dt = 0/µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L D ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 7.0mH R G = 25Ω, I S = 8.4. (See Figure 2) ƒ I SD 8.4, di/dt 490/µs, V DD V (BR)DSS, T J 75 C Puse width 300µs; duty cyce 2%.
4 I D, DraintoSource Current () 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current () 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T c = 25 C V DS, DraintoSource Votage (V) 20µs PULSE W IDTH 0. T C = 75 C 0. 0 V DS, DraintoSource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I D = 4 I D, DraintoSource Current () T = 25 C J V DS = 50V 20µs PULSE WIDTH V, GatetoSource Votage (V) GS T J = 75 C R DS(on), DraintoSource On Resistance (Normaized) = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature
5 C, Capacitance (pf) = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd C iss C oss C rss 0 0 V DS, DraintoSource Votage (V), GatetoSource Votage (V) I = D 8.4 V DS =80V V DS =50V V DS =20V FOR TEST CIRCUIT SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. DraintoSource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I SD, Reverse Drain Current () 0 T J = 50 C T J = 25 C 0. = 0V V SD, SourcetoDrain Votage (V) I I D, Drain Current () 00 0 OPERTION IN THIS RE LIMITED BY R DS(on) us 0us ms TC = 25 C TJ = 75 C Singe Puse ms 0 00 V DS, DraintoSource Votage (V) Fig 7. Typica SourceDrain Diode Forward Votage Fig 8. Maximum Safe Operating rea
6 I D, Drain Current () R G V DS V Puse Width µs Duty Factor 0. % R D D.U.T. Fig a. Switching Time Test Circuit V DD T, Case Temperature ( C C) t d(on) t r t d(off) t f % Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig b. Switching Time Waveforms Therma Response (Z thjc ) 0. D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectanguar Puse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase
7 Fig 2a. Uncamped Inductive Test Circuit I S V DS L R G D.U.T V DD IS 20V DRIVER tp 0.0Ω 5V E S, Singe Puse vaanche Energy (mj) I D TOP BOTTOM Starting T, Junction Temperature ( J C) Fig 2c. Maximum vaanche Energy Vs. Drain Current tp V (BR)DSS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as D.U.T. V Q G 2V.2µF 50KΩ.3µF Q GS Q GD D.U.T. V DS V G 3m Charge I G I D Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
8 Peak Diode Recovery dv/dt Test Circuit IRF9530N D.U.T* ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer R G dv/dt controed by R G I SD controed by Duty Factor "D" D.U.T. Device Under Test V DD * Reverse Poarity of D.U.T for PChanne Driver Gate Drive Period P.W. D = P.W. Period [ =V ] *** D.U.T. I SD Waveform Reverse Recovery Current Reppied Votage Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Rippe 5% Forward Drop [ V DD ] [ ] I SD *** = 5.0V for Logic Leve and 3V Drive Devices Fig 4. For PChanne HEXFETS
9 Package Outine TO220B Outine Dimensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.255) 6. (.240) (.045) M IN LED SSIGNMENTS GTE 2 DRIN 3 SOU RC E 4 DRIN 4.09 (.555) 3.47 (.530) 4.06 (.60) 3.55 (.40) 3X.40 (.055).5 (.045) 2.54 (.0) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) D IM E N S IO N IN G & TO L E R N C ING P E R N S I Y 4.5M, O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO 2 20 B. 2 CONTROLLING DIMENSION : INCH 4 HETSINK & LED MESUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220B EXMPLE EXMPLE : THIS : THIS N IS N IRF IRF W ITH W ITH SSEMBLY LOT LOT CODE CODE 9BM 9BM INTERNTIONL RECTIFIER RECTIFIER IRF IRF LOGO LOGO B 9B M M SSEMBLY SSEMBLY LOT LOT CO DE CO DE PRT PRT NUMBER NUMBER DTE DTE CODE CODE (YYWW) (YYWW) YY YY = YER = YER WW WW = WEEK = WEEK WORLD HEDQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CND: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 304 NishiIkebukuro 3Chome, Toshimaku, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #02 Tan Boon Liat Buiding, Singapore 036 Te: Data and specifications subject to change without notice. 5/98
TO-220AB contribute to its wide acceptance throughout the industry.
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Features Low gate charge 1% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification S = 88 V @T jmax = 3A R DS(ON) =. (max) @ = 1 V D G Absolute Maximum Ratings
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PoarHT TM HiPerFET Power MOSFET N-Channe Enhancement Mode Avaanche Rated Fast Intrinsic Diode = 15 V I D25 = 15 A R DS(on) 11 mω t rr ns Symbo Test Conditions Maximum Ratings = 25 C to 175 C 15 V V DGR
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V DS 30 V V GS Max ± 20 V R DS(on) max (@V GS = V) R DS(on) max (@V GS = 4.5V) m: 54 m: G S PD - 97432 HEXFET Power MOSFET 2 3 D Micro3 TM (SOT-23) Application(s) Load/ System Switch Features and Benefits
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PD - 9757 IRLML000TRPbF HEXFET Power MOSFET V DS 00 V V GS Max ± 6 V G R DS(on) max (@V GS = 0V) 220 m: 3 D R DS(on) max (@V GS = 4.5V) 235 m: S 2 Micro3 TM (SOT-23) IRLML000TRPbF Application(s) Load/
More informationSSF65R580F. Main Product Characteristics 700V. V J max. 0.52Ω (typ.) I D 8.0A TO-220F. Features and Benefits. Description
Main Product Characteristics V DSS @T J max R DS (on) 700V 0.52Ω (typ.) 8.0A TO-220F Schematic Diagram Features and Benefits Low R DS(on) and FOM Extremely low switching loss Excellent stability and uniformity
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Bulletin PD -.9 rev. /00 HEXFRED TM HF5TB60 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
More informationV DSS R DS(on) max Qg. 30V GS = 10V 30nC. 170 P A = 25 C Power Dissipation 2.5 P A = 70 C Power Dissipation Linear Derating Factor
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance
Advanced Prcess Techngy Surface Munt (IRF3NS) Lw-prfie thrugh-he (IRF3NL) 75 C Operating Temperature Fast Switching Fuy Avaanche Rated Descriptin Fifth Generatin HEXFETs frm Internatina Rectifier utiize
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Bulletin PD -.364 rev. B /00 HEXFRED TM HF6PB0 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Advanced Prcess Technlgy l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Descriptin Fifth Generatin HEXFETs frm Internatinal Rectifier utilize
More informationV DSS R DS(on) max Qg. 30V GS = 10V 30nC. Thermal Resistance Parameter Typ. Max. Units Junction-to-Drain Lead g 20 Junction-to-Ambient f
pplications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated C-C Converters Benefits l Very Low R S(on) at 4.5V V GS l Ultra-Low Gate Impedance l Fully Characterized
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More information250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor
PDP TRENCH IGBT PD - 9634 IRG6B33UDPbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM
More information30V GS = 10V 6.2nC
pplications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated C-C Converters in Networking Systems Benefits l Very Low Gate Charge l Very Low R S(on)
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4V NChannel MOSFET General Description The AOD484A combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is well suited for high current
More informationProduct Summary. Drain source voltage V DS 200 V Drain-Source on-state resistance R DS(on) 0.4 Ω Continuous drain current I D 7 A I D.
SIPMOS Power Transistor Features N channel Enhancement mode valanche rated dv/dt rated Product Summary Drain source voltage V DS V DrainSource onstate resistance R DS(on). Ω Continuous drain current I
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AOVS6 6V 8A αmos TM Power Transistor General Description The AOVS6 has been fabricated using the advanced αmos TM high voltage process that is designed to deliver high levels of performance and robustness
More informationV DSS R DS(on) max I D. 100V GS = 10V 7.3A. 58 P A = 25 C Maximum Power Dissipation 2.5 Linear Derating Factor
P - 94683C HEXFET Power MOSFET Applications l High frequency C-C converters V SS R S(on) max I 0V 22m:@V GS = V 7.3A Benefits l Low Gate to rain Charge to Reduce Switching Losses l Fully Characterized
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 600 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationPower MOSFET D 2 PAK (TO-263) G D. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 Gate-Source Voltage V GS ± 20
Power MOSFET DTW2070 PRODUCT SUMMRY V DS (V) 200 R DS(on) ( ) V GS = 0 V 0.09 Q g (Max.) (nc) 70 Q gs (nc) 3 Q gd (nc) 39 Configuration Single FETURES Halogen-free ccording to IEC 6249-2-2 Definition Surface
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Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Advanced Prcess Technlgy Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Descriptin Fifth Generatin HEXFET Pwer MOSFETs frm Internatinal Rectifier
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Polar3 TM HiperFET TM Power MOSFET Preliminary Technical Information V DSS I D2 R DS(on) = V = 42A 8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum
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PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 30 27.5m 7A annel -30 34m -6A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel
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SIPMOS SmallSignalTransistor Features PChannel Enhancement mode valanche rated Logic Level dv/dt rated Qualified according to EC Q Halogen free according to IEC6249 2 2 Product Summary Drain source voltage
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D Series Power MOSFET SiHUND PRODUCT SUMMRY (V) at T J max. R DS(on) max. () at 2 C V GS = V.2 Q g max. (nc) 2 Q gs (nc) 2 Q gd (nc) Configuration Single D IPK (TO2) G D S ORDERING INFORMTION Package Lead
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4V Dual NChannel MOSFET General Description The AON64 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This is an all purpose device that is suitable for use in a wide
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Advance Technical Information Polar3 TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN8N6P3 S = I D25 = 66A R DS(on) 7mΩ t rr 25ns minibloc E53432 G S Symbol Test Conditions
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Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA7NP IXFP7NP V DSS = V I D = 7A R DS(on).9 TO-3 (IXFA) Symbol Test Conditions Maximum Ratings V
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AOL4 4V NChannel MOSFET General Description The AOL4 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.power losses are minimized
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PRODUCT SUMMARY D V (BR)DSS R DS(ON) I D -4V 15mΩ -45A G 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source
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High Voltage Power MOSFET S = 5V I D5 = 3A R DS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-7 Symbol Test Conditions Maximum Ratings S = 5 C to 5 C 5 V V DGR = 5 C to 5 C,
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Polar TM HiPerFET TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier S I D25 R DS(on) t rr = 9V = 56A 145m ns Symbol Test Conditions Maximum Ratings S = 25 C to 1 C 9 V
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AON7 3V PChannel MOSFET General Description Product Summary The AON7 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is ideal for load switch and battery
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