IRF7406 PD C. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.045Ω PRELIMINARY. Description SO-8. Absolute Maximum Ratings

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1 l Generation V Technology l Ultra Low OnResistance l PChannel Mosfet l urface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast witching escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. PRELIMINRY G Top View P 9.247C HEXFET Power MOFET V = 30V R (on) = 0.045Ω The O8 has been modified through a customized leadframe for enhanced thermal characteristics and multipledie capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. O8 bsolute Maximum Ratings Parameter Max. Units T = 25 C 0 ec. Pulsed rain Current, V 0V 6.7 T = 25 C Continuous rain Current, V 0V 5.8 T = 70 C Continuous rain Current, V 0V 3.7 I M Pulsed rain Current 23 = 25 C Power issipation 2.5 W Linear erating Factor 0.02 W/ C V G Gatetoource Voltage ± 20 V dv/dt Peak iode Recovery dv/dt.3 V/ns T J, T TG Junction and torage Temperature Range 55 to 50 C Thermal Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junctiontombient 50 C/W 8/8/97

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR) raintoource Breakdown Voltage 30 V V G = 0V, I = 250µ V (BR) / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m R (ON) tatic raintoource OnResistance V G = 0V, I = 2.8 ƒ Ω V G = 4.5V, I = 2.4 ƒ V G(th) Gate Threshold Voltage.0 V V = V G, I = 250µ g fs Forward Transconductance 3. V = 5V, I = 2.8 I raintoource Leakage Current.0 V = 24V, V G = 0V µ 25 V = 24V, V G = 0V, T J = 25 C Gatetoource Forward Leakage 00 V G = 20V I G n Gatetoource Reverse Leakage 00 V G = 20V Q g Total Gate Charge 59 I = 2.8 Q gs Gatetoource Charge 5.7 nc V = 2.4V Q gd Gatetorain ("Miller") Charge 2 V G = 0V, ee Fig. 6 and 2 ƒ t d(on) TurnOn elay Time 6 V = 5V t r Rise Time 33 I = 2.8 ns t d(off) TurnOff elay Time 45 R G = 6.0Ω t f Fall Time 47 R = 5.3Ω, ee Fig. 0 ƒ L Internal rain Inductance 2.5 L Internal ource Inductance 4.0 Between lead tip and center of die contact C iss Input Capacitance 00 V G = 0V C oss Output Capacitance 490 pf V = 25V C rss Reverse Transfer Capacitance 220 ƒ =.0MHz, ee Fig. 5 ourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous ource Current MOFET symbol 3. (Body iode) showing the I M Pulsed ource Current integral reverse G 23 (Body iode) pn junction diode. V iode Forward Voltage.0 V T J = 25 C, I = 2.0, V G = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 2.8 Q rr Reverse RecoveryCharge µc di/dt = 00/µs ƒ t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L L ) nh G Notes: Repetitive rating; pulse width limited by max. junction temperature. ( ee fig. ) ƒ Pulse width 300µs; duty cycle 2%. I 2.8, di/dt 90/µs, V V (BR), T J 50 C urface mounted on FR4 board, t 0sec.

3 I, raintoource C urrent () VG TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V 4.5V I, raintoource C urrent ( ) VG TOP 5V 0V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULE W ITH T J = 25 C V, raintoource Voltage (V) 20µs PULE WITH T J = 50 C V, raintoource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, raintoource Current () 000 T J = 25 C 00 T J = 50 C V = 5 V 20µs PULE W ITH V G, Gatetoource Voltage (V) R (on), rainto ource On Resistance (Normalized) I = 4.7 V G = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature

4 C, Capacitance (pf) V G = 0V, f = M Hz C iss = C gs C gd, C ds HORTE C rss = C gd C oss = C ds C gd C is s C oss C rss V, raintoource Voltage (V) V G, Gatetoource Voltage (V) I = 2.8 V = 24V FOR TET CIRCUIT 0 EE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. raintoource Voltage Fig 6. Typical Gate Charge Vs. Gatetoource Voltage I, R everse rain Current () 00 0 T J = 50 C T J = 25 C V G = 0V V, ourcetorain Voltage (V) Fig 7. Typical ourcerain iode Forward Voltage I I, rain Current () 00 0 OPERTION IN THI RE LIMITE BY R (on) 00us ms T = 25 C 0ms TJ = 50 C ingle Pulse V, raintoource Voltage (V) Fig 8. Maximum afe Operating rea

5 6.0 V R I, rain Current () R G V G 0V Pulse Width µs uty Factor 0. %.U.T. Fig 0a. witching Time Test Circuit V T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. mbient Temperature V 90% 0% V G t d(on) t r t d(off) t f Fig 0b. witching Time Waveforms 00 Thermal Response (Z thj ) 0 = INGLE PULE t2 (THERML REPONE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thj T t, Rectangular Pulse uration (sec) PM t Fig. Maximum Effective Transient Thermal Impedance, Junctiontombient

6 Current Regulator ame Type as.u.t. 50KΩ Q G 2V.2µF.3µF 0V Q G Q G.U.T. V V G V G 3m Charge Fig 2a. Basic Gate Charge Waveform I G I Current ampling Resistors Fig 2b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low tray Inductance Ground Plane Low Leakage Inductance Current Transformer ** V G * R G dv/dt controlled by R G I controlled by uty Factor "".U.T. evice Under Test * V * Reverse Polarity for PChannel ** Use PChannel river for PChannel Measurements river Gate rive Period P.W. = P.W. Period [ V G =0V] ***.U.T. I Waveform Reverse Recovery Current Repplied Voltage Body iode Forward Current di/dt.u.t. V Waveform iode Recovery dv/dt Inductor Curent Body iode Ripple 5% Forward rop [ V ] [ ] I *** V G = 5.0V for Logic Level and 3V rive evices Fig 3. For PChannel HEXFET

8 Package Outline O8 Outline imensions are shown in millimeters (inches) 5 E B H 0.25 (.00) M M e 6X e K x 45 θ C 0.0 (.004) L 6 B 8X 8X 0.25 (.00) M C B NOTE:. IMENIONING N TOLERNCING PER NI Y4.5M CONTROLLING IMENION : INCH. 3. IMENION RE HOWN IN MILLIMETER (INCHE). 4. OUTLINE CONFORM TO JEEC OUTLINE M02. 5 IMENION OE NOT INCLUE MOL PROTRUION MOL PROTRUION NOT TO EXCEE 0.25 (.006). 6 IMENION I THE LENGTH OF LE FOR OLERING TO UBTRTE.. C 8X INCHE MILLIMETER IM MIN MX MIN MX B C E e.050 BIC.27 BIC e.025 BIC BIC H K L θ RECOMMENE FOOTPRINT 6.46 (.255 ).27 (.050 ) 3X 0.72 (.028 ) 8X.78 (.070) 8X Part Marking Information O8 EXMPLE : THI I N IRF70 INTERNTIONL RECTIFIER LOGO F70 TOP 32 TE COE (YWW) Y = LT IGIT OF THE YER WW = WEEK PRT NUMBER W FER LOT COE (LT 4 IGIT) XXXX BOTTOM

9 Tape & Reel Information O8 imensions are shown in millimeters (inches) TER MIN TION NUMBER 2.05 (.080).95 (.077) 4.0 (.6).85 (.072) 3.90 (.54).65 (.065).60 (.062).50 (.059) 0.35 (.03) 0.25 (.00) 5.55 (.28) 5.45 (.25) 5.30 (.208) 5.0 (.20) 2.30 (.484).70 (.46) FEE IRECTION 8.0 (.38) 7.90 (.3) 2.60 (.02).50 (.059) 6.50 (.255) 6.30 (.248) 2.20 (.086) 2.00 (.079) 3.20 (.59) 2.80 (.504) 5.40 (.607).90 (.469) (3.000) MX (.969) MIN. NOTE: CONFO RM TO EI48 2 INCLUE FLNGE OUTER EGE 3 IMENION HUB 4 CONTROLLING IMENION : METRIC 4.40 (.566) 2.40 (.448) (.724) MX 3 WORL HEQURTER: 233 Kansas t., El egundo, California 90245, Tel: (30) EUROPEN HEQURTER: Hurst Green, Oxted, urrey RH8 9BB, UK Tel: IR CN: 732 Victoria Park ve., uite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: aalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 007 Borgaro, Torino Tel: IR FR ET: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Tel: IR OUTHET I: 35 Outram Road, #002 Tan Boon Liat Building, ingapore 036 Tel: ata and specifications subject to change without notice. 8/97

IRF7403 PD B. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.022Ω PRELIMINARY SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings

IRF7403 PD B. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.022Ω PRELIMINARY SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings HEXFET Power MOFET PRELIMINRY P - 9.245B IRF7403 l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l