IRLMS2002PbF. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω

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1 P IRLMS2002PbF HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount Avaiabe in Tape & Ree 2.5V Rated Lead-Free G A S V SS = 20V R S(on) = 0.030Ω escription These N-Channe MOSFETs from Internationa Rectifier utiize advanced processing techniques to achieve the extremey ow on-resistance per siicon area. This benefit provides the designer with an extremey efficient device for use in battery and oad management appications. Top View The Micro6 package with its customized eadframe produces a HEXFET power MOSFET with R S(on) 60% ess than a simiar size SOT-23. This package is idea for appications where printed circuit board space is at a premium. It's unique therma design and R S(on) reduction enabes a current-handing increase of neary 300% compared to the SOT-23. Micro6 Absoute Maximum Ratings Parameter Max. Units V S rain- Source Votage 20 V T A = 25 C Continuous rain Current, V 4.5V 6.5 T A = 70 C Continuous rain Current, V 4.5V 5.2 A I M Pused rain Current 20 A = 25 C Power issipation 2.0 A = 70 C Power issipation.3 W Linear erating Factor 0.06 W/ C V GS Gate-to-Source Votage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Therma Resistance Parameter Max. Units R θja Maximum Junction-to-Ambientƒ 62.5 C/W /8/05

2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Votage 20 V V GS = 0V, I = 250µA V (BR)SS / T J Breakdown Votage Temp. Coefficient 0.06 V/ C Reference to 25 C, I = ma R S(on) Static rain-to-source On-Resistance V GS = 4.5V, I = 6.5A Ω V GS = 2.5V, I = 5.2A V GS(th) Gate Threshod Votage V V S = V GS, I = 250µA g fs Forward Transconductance 3 S V S = 0V, I = 6.5A I SS rain-to-source Leakage Current.0 V S = 6V, V GS = 0V µa 25 V S = 6V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -00 V GS = -2V na Gate-to-Source Reverse Leakage 00 V GS = 2V Q g Tota Gate Charge 5 22 I = 6.5A Q gs Gate-to-Source Charge nc V S = 0V Q gd Gate-to-rain ("Mier") Charge V GS = 5.0V t d(on) Turn-On eay Time 8.5 V = 0V t r Rise Time I =.0A ns t d(off) Turn-Off eay Time 36 R G = 6.0Ω t f Fa Time 6 R = 0Ω C iss Input Capacitance 30 V GS = 0V C oss Output Capacitance 50 pf V S = 5V C rss Reverse Transfer Capacitance 36 ƒ =.0MHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 2.0 (Body iode) showing the A I SM Pused Source Current integra reverse G 20 (Body iode) p-n junction diode. V S iode Forward Votage.2 V T J = 25 C, I S =.7A, V GS = 0V t rr Reverse Recovery Time 9 29 ns T J = 25 C, I F =.7A Q rr Reverse Recovery Charge 3 20 nc di/dt = 00A/µs S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) ƒ Surface mounted on FR-4 board, t 5sec. Puse width 400µs; duty cyce 2%. 2

3 I, rain-to-source Current (A) 00 0 VGS TOP 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM.50V.50V 20µs PULSE WITH T J = 25 C V S, rain-to-source Votage (V) I, rain-to-source Current (A) 00 0 VGS TOP 7.50V 5.00V 4.00V 3.50V 3.00V 2.50V 2.00V BOTTOM.50V.50V 20µs PULSE WITH T J = 50 C V S, rain-to-source Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, rain-to-source Current (A) 00 0 T J = 25 C T J = 50 C V S= 5V 20µs PULSE WITH V GS, Gate-to-Source Votage (V) R S(on), rain-to-source On Resistance (Normaized) 2.0 I = 5.3A V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTE Crss = Cgd Coss = Cds + Cgd C iss C oss 0 C rss 0 00 V S, rain-to-source Votage (V) V GS, Gate-to-Source Votage (V) 0 I = 5.3A 6.5A V S = 0V Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. rain-to-source Votage Fig 6. Typica Gate Charge Vs. Gate-to-Source Votage I S, Reverse rain Current (A) 00 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Votage (V) I, rain Current (A) 00 0 OPERATION IN THIS AREA LIMITE BY R S(on) ms 0ms TA = 25 C TJ = 50 C Singe Puse V S, rain-to-source Votage (V) Fig 7. Typica Source-rain iode Forward Votage Fig 8. Maximum Safe Operating Area 4

5 V GS(th), Variace ( V ) IRLMS2002PbF I, rain Current (A) Id = 250µA T C, Case Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum rain Current Vs. Case Temperature Fig 0. Typica Vgs(th) Variance Vs. Juction Temperature 00 Therma Response (Z thja ) 0 = Notes: SINGLE PULSE. uty factor = t / t 2 (THERMAL RESPONSE) 2. Peak T J= P M x Z thja + TA t, Rectanguar Puse uration (sec) PM t t2 Fig. Maximum Effective Transient Therma Impedance, Junction-to-Ambient 5

6 R S ( on), rain-to-source On Resistance ( Ω ) IRLMS2002PbF R S(on), rain-to -Source Votage ( Ω ) Id = 5.3A 0.04 VGS= 2.5V V GS, Gate -to -Source Votage ( V ) I, - rain Current (A ) VGS = 4.5V Fig 2. Typica On-Resistance Vs. Gate Votage Fig 3. Typica On-Resistance Vs. rain Current 6

7 Micro6 (SOT23 6L) Package Outine imensions are shown in miimeters (inches) 3.00 (.8 ) 2.80 (. ) -B- LEA ASSIGNMENTS RECOMMENE FOOTPRINT S 2X 0.95 (.0375 ).75 (.068 ).50 (.060 ) -A (.8 ) 2.60 (.03 ) (.087 ) 6X (.06 (.042 ) 0.95 (.0375 ) 2X 0.50 (.09 ) 6X 0.35 (.04 ) 0.5 (.006 ) M C A S B S G 6X 0.65 (.025 ).30 (.05 ) 0.90 (.036 ).45 (.057 ) 0.90 (.036 ) O O (.007 ) 6X 0.09 (.004 ) -C- 0.5 (.006 ) MAX. 0.0 (.004 ) 6 SURFACES 0.60 (.023 ) 0.0 (.004 ) NOTES :. IMENSIONING & TOLERANCING PER ANSI Y4.5M CONTROLLING IMENSION : MILLIMETER. 3. IMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Micro6 (SOT23 6L) Part Marking Information Micro6 P W = (-26) IF PRECEE BY LAST IGIT OF CALENAR YEAR PART NUMBER PART NUMBER COE REFERENCE: A = IRLMS902 B = IRLMS503 C = IRLMS6702 = IRLMS 5703 E = IRLMS6802 F = IRLMS4502 G = IRLMS2002 H = IRLMS6803 TOP Note: A ine above the work week (as shown here) indicates Lead-Free. Y = YEAR W = WEEK LOT COE YEAR W = (27-52) IF PRECEE BY A LETTER YEAR Y Y WORK WEEK WORK WEEK A 27 B 28 C E F G H J K W A B C X Y Z W A B C Y X Z 7

8 Micro6 Tape & Ree Information imensions are shown in miimeters (inches) 8mm 4mm FEE IRECTION NOTES :. OUTLINE CONFORMS TO EIA-48 & EIA ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. This product has been designed and quaified for the consumer market. Quaification Standards can be found on IR s Web site. ata and specifications subject to change without notice. IR WORL HEAQUARTERS: 233 Kansas St., E Segundo, Caifornia 90245, USA Te: (30) TAC Fax: (30) Visit us at for saes contact information. ata and specifications subject to change without notice. 0/05 8

IRLMS2002. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω

IRLMS2002. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.030Ω P- 93758 IRLMS2002 HEXFET Power MOSFET Utra Low On-Resistance N-Channe MOSFET Surface Mount vaiabe in Tape & Ree 2.5V Rated G 2 6 5 3 4 S V SS = 20V R S(on) = 0.030Ω escription These N-Channe MOSFETs from