PolarHT TM HiPerFET Power MOSFET
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- Samson Bryant
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1 PoarHT TM HiPerFET Power MOSFET N-Channe Enhancement Mode Fast Intrinsic Diode Avaanche Rated S = V I D25 = 17 A R DS(on) 9. mω t rr 15 ns Symbo Test Conditions Maximum Ratings S = 25 C to 175 C V V DGR = 25 C to 175 C; R GS = 1 MΩ V Continuous ± V M Transient ±3 V I D25 = 25 C 17 A I D(RMS) Externa ead current imit 75 A I DM = 25 C, puse width imited by M 35 A I AR = 25 C A E AR = 25 C mj E AS = 25 C 2. J TO-247 (IXFH) G D S TO-264 (IXFK) D (TAB) dv/dt I S I DM, di/dt A/µs, V DD S, 1 V/ns 15 C, R G = 4 Ω P D = 25 C 714 W C M 175 C T stg C T L 1.6 mm (.62 in.) from case for 1 s 3 C T SOLD Pastic body for 1 s 2 C M d Mounting torque (TO-3P) 1.13/1 Nm/b.in. Weight TO-3P 5.5 g TO g TO g Symbo Test Conditions Characteristic Vaues ( = 25 C, uness otherwise specified) Min. Typ. Max. BS = V = 25 µa V (th) = = 4 ma V I GSS = ± V, = V ± na G = Gate S = Source Features D = Drain TAB = Drain Internationa standard packages Uncamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages G D S Easy to mount Space savings High power density D (TAB) I DSS = S 25 µa = V = 125 C 25 µa R DS(on) = 1 V 9. m Ω = 15 V = 35A 6.6 m Ω Puse test, t 3 µs, duty cyce d 2 % 6 IXYS A rights reserved DS993E(3/6)
2 Symbo Test Conditions Characteristic Vaues ( = 25 C, uness otherwise specified) Min. Typ. Max. TO-247 (IXFH) Outine g fs = 1 V; I D, puse test S C iss pf C oss = V, = 25 V, f = 1 MHz 23 pf C rss 73 pf t d(on) 35 ns t r = 1 V, =.5 S = A 5 ns t d(off) R G = 3.3 Ω (Externa) 9 ns t f 33 ns Q g(on) 198 nc Q gs = 1 V, =.5 S 39 nc Q gd 17 nc R thjc.21 C/W R thcs (TO-264).15 C/W Source-Drain Diode Characteristic Vaues ( = 25 C, uness otherwise specified) Symbo Test Conditions Min. Typ. Max. I S = V 17 A I SM Repetitive 35 A Terminas: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Miimeter Inches Min. Max. Min. Max. A A A b b b C D E e L L P Q R S 6.15 BSC 242 BSC TO-264 (IXFK) Outine V SD I F = I S, = V, 1.5 V Puse test, t 3 µs, duty cyce d 2 % t rr I F = 25 A, -di/dt = A/µs 15 ns Q RM V R = 5 V, = V.6 µc F RM 8 A IXYS reserves the right to change imits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,4,65 B1 6,683,344 6,727,585 one or moreof the foowing U.S. patents: 4,85,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,5B2 6,759,692 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2
3 Fig. 1. Output 25ºC Fig. 2. Extended Output 25ºC = 1V 3 2 = 1V V D S - Vots V D S - Vots Fig. 3. Output 15ºC Fig. 4. R DS(on) Norm aized to.5 I D25 Vaue vs. Junction Tem perature = 1V = 1V 1 R D S ( o n ) - Normaized I D = 17A I D = 85A 5V V D S - Vots Degrees Centigrade 2.75 Fig. 5. R DS(on) Norm aized to.5 I D25 Vaue vs. Drain Current 9 Fig. 6. Drain Current vs. Case Temperature 2.5 Externa Lead Current Limit R D S ( o n ) - Normaized = 1V = 1V = 175ºC = 25ºC Degrees Centigrade 6 IXYS A rights reserved
4 Fig. 7. Input Admittance Fig. 8. Transconductance = 15ºC 25ºC -ºC g f s - Siemens = -ºC 25ºC 15ºC V G S - Vots Fig. 9. Source Current vs. Source-To-Drain Votage Fig. 1. Gate Charge = 5V I D = 85A I G = 1mA I S - Amperes 15 V G S - Vots = 15ºC = 25ºC V S D - Vots 1 Q G - nanocouombs Fig. 11. Capacitance Fig. 12. Forw ard-bias Safe Operating Area f = 1MHz R DS(on) Limit = 175ºC = 25ºC Capacitance - picofarads Ciss Coss Crss DC µs 1ms 1ms Vots V D S - Vots IXYS reserves the right to change imits, test conditions, and dimensions.
5 Fig. 13. Maximum Transient Therma Resistance 1. R( t h ) J C - ºC / W Puse Width -Seconds 6 IXYS A rights reserved
PolarHT TM Power MOSFET
PoarHT TM Power MOSFET = 5 V I D25 = A R DS(on) m Ω N-Channe Enhancement Mode Avaanche Rated Symbo Test Conditions Maximum Ratings TO-264 (IXTK) = 25 C to 75 C V V DGR = 25 C to 75 C; R GS = MΩ V Continuous
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GenX TM V IGBT w/diode Ultra Low Vsat PT IGBT for up to khz switching IXGH8NAD S = V = 8A (sat).v TO-7 AD Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
More informationDistributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached materia are the property of its owner. Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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