PolarHT TM Power MOSFET
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- Magnus Manning
- 5 years ago
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1 PoarHT TM Power MOSFET = 5 V I D25 = A R DS(on) m Ω N-Channe Enhancement Mode Avaanche Rated Symbo Test Conditions Maximum Ratings TO-264 (IXTK) = 25 C to 75 C V V DGR = 25 C to 75 C; R GS = MΩ V Continuous ± V M Transient ±3 V I D25 = 25 C A I D(RMS) Externa ead current imit 75 A I DM = 25 C, puse width imited by M 3 A I AR = 25 C A E AR = 25 C mj E AS = 25 C 4 J G D S G = Gate S = Source (TAB) D = Drain TAB = Drain dv/dt I S I DM, di/dt A/µs, V DD, V/ns 5 C, R G = 4 Ω P D = 25 C W C M 75 C T stg C T L.6 mm (.62 in.) from case for s 3 C T SOLD Pastic body for s 2 C M d Mounting torque.3/ Nm/b.in. Weight g Symbo Test Conditions Characteristic Vaues ( = 25 C, uness otherwise specified) Min. Typ. Max. B = V = 25 µa 5 V Features Internationa standard package Uncamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density (th) = = 5µA V I GSS = ± V DC, = ± na I DSS = 25 µa = V = 5 C 25 µa R DS(on) = V m Ω Puse test, t 3 µs, duty cyce d 2 % 5 IXYS A rights reserved DS99297E(2/5)
2 Symbo Test Conditions Characteristic Vaues ( = 25 C, uness otherwise specified) Min. Typ. Max. TO-264 (IXTK) Outine g fs = V; I D, puse test S C iss 7 pf C oss = V, = 25 V, f = MHz 225 pf C rss 55 pf t d(on) 3 ns t r = V, =.5 = A 32 ns t d(off) R G = 3.3 Ω (Externa) 5 ns t f 36 ns Q g(on) 2 nc Q gs = V, =.5 55 nc Q gd nc R thjc.8 C/W R thcs.5 C/W Source-Drain Diode Characteristic Vaues ( = 25 C, uness otherwise specified) Symbo Test Conditions Min. Typ. Max. I S = V A Dim. Miimeter Inches Min. Max. Min. Max. A A A b b b c D E e 5.46 BSC.25 BSC J K L L P Q Q R R S T I SM Repetitive 3 A V SD I F = I S, = V,.5 V Puse test, t 3 µs, duty cyce d 2 % t rr I F = 25 A, -di/dt = A/µs 5 ns Q RM V R = V, = V 2.3 µc IXYS reserves the right to change imits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,93,844 5,49,96 5,237,48 6,62,665 6,4,65 B 6,683,344 6,727,585 one or moreof the foowing U.S. patents: 4,85,72 5,7,58 5,63,37 5,38,25 6,259,23 B 6,534,343 6,7,5B2 6,759,692 4,88,6 5,34,796 5,87,7 5,486,75 6,36,728 B 6,583,55 6,7,463 6,77,478 B2
3 Fig.. Output 25ºC Fig. 2. Extended Output 25ºC = V 3 2 = V 2 8V 8V 6 6V V D S - Vots V D S - Vots Fig. 3. Output 5ºC = V Fig. 4. R DS(on) Normaized to.5 I D25 Vaue vs. Junction Tem perature = V 8 6V 5V R D S ( o n ) - Normaized I D = A I D = 9A V D S - Vots Degrees Centigrade 3.4 Fig. 5. R DS(on) Normaized to.5 I D25 Vaue vs. Drain Current 9 Fig. 6. Drain Current vs. Case Temperature R D S ( o n ) - Normaized = 5V = 75ºC = V = 25ºC Externa Lead Current Limit Degrees Centigrade 5 IXYS A rights reserved
4 Fig. 7. Input Admittance Fig. 8. Transconductance = 5ºC g f s - Siemens = -ºC 25ºC 5ºC ºC -ºC V G S - Vots Fig. 9. Source Current vs. Source-To-Drain Votage Fig.. Gate Charge = 75V I D = 9A I G = ma I S - Amperes 5 VG S - Vots = 5ºC 3 5 = 25ºC V S D - Vots Q G - nanocouombs, Fig.. Capacitance Fig. 2. Forw ard-bias Safe Operating Area f = MHz Capacitance - picofarads,, C is C os C rs R DS(on) Limit = 75ºC = 25ºC DC 25µs µs ms ms Vots V D S - Vots IXYS reserves the right to change imits, test conditions, and dimensions.
5 Fig. 3. M axim um Transient Therm a Resistance. R ( t h ) J C - ºC / W.... Puse Width - miiseconds 5 IXYS A rights reserved
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High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYH1N5CV1HV S 11 = 5V = 1A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5 V V CGR = 5 C to 175 C, R GE
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PD 97049B IRF52SPbF IRF52LPbF HEXFET Power MOSFET Advanced Process Technoogy Utra Low OnResistance 50 C Operating Temperature Fast Switching Repetitive Avaanche Aowed up to Tjmax Some Parameters are Different
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High Voltage XPT TM IGBT w/ Diode Preliminary Technical Information IXYX5N5CV1 IXYX5N5CV1HV S 11 = 5V = 5A (sat).v = ns t fi(typ) PLUS7 (IXYX) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5
More informationIXXH80N65B4H1 V CES. XPT TM 650V IGBT GenX4 TM w/ Sonic Diode = 650V I C110. = 80A V CE(sat) 2.1V = 52ns. t fi(typ)
XPT TM 5V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXHN5BH S = 5V = A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 75 C 5 V V CGR
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V XPT TM IGBT GenX TM High-Speed IGBT for - khz Switching IXYHNC S = V = A (sat).v t fi(typ) = 9ns Symbol Test Conditions Maximum Ratings S = C to 7 C V V CGR = C to 7 C, R GE = MΩ V V GES Continuous ±
More informationAdvance Technical Information IXFN110N85X V DSS. High Power Density Easy to Mount Space Savings BV DSS. = 3mA 850 V. = 8mA
Advance Technical Information X-Class HiPerFET TM Power MOFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN11N85X V D = 85V I D25 = 11A R D(on) 33m D minibloc, OT-227 E153432 ymbol
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High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Information V CES = 3V 11 = 11A V CE(sat) 3.2V C1 C2 (Electrically Isolated Tab) G1 E1C3 G2 E2C G3 G E3E C1 C2
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GenX TM V IGBTs Medium-Speed-Low-Vsat PT IGBTs for -khz Switching S = V = A (sat).v t fi(typ) = ns TO- (IXGK) Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
More informationIXGH60N60C3 = 600V I C110. GenX3 TM 600V IGBT V CES. = 60A V CE(sat) 2.5V t fi (typ) = 50ns. High Speed PT IGBT for kHz Switching TO-247 AD
GenX3 TM V IGBT High Speed PT IGBT for -khz Switching IXGHNC3 V CES = V 11 = A V CE(sat) V t fi (typ) = 5ns Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C, R GE = 1MΩ
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HiPerFAST TM IGBT with Diode C2-Class High Speed IGBTs IXGH 3N6C2D1 IXGT 3N6C2D1 S = 6 V 2 = 7 A (sat) = 2.7 V t fi typ = 32 ns Symbol Test Conditions Maximum Ratings S = 2 C to 1 C 6 V V CGR = 2 C to
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High Voltage IGBTs For Capacitor Discharge Applications Preliminary Technical Information IXGKN25 IXGXN25 S = 25V 11 = A (sat) 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C
More informationDistributed by: www.jameco.com -800-83-4242 The content and copyrights of the attached materia are the property of its owner. Utra Low On-Resistance N-Channe MOSFET SOT-23 Footprint Low Profie (
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TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored
More informationGenX3 TM 1200V IGBT IXGH50N120C3 V CES = 1200V I C110 = 50A. 4.2V t fi(typ) = 64ns. Preliminary Technical Information
Preliminary Technical Information GenX3 TM 12V IGBT High speed PT IGBTs for 2 - khz switching IXGHN12C3 V CES = 12V 11 = A V CE(sat).2V t fi(typ) = ns Symbol Test Conditions Maximum Ratings V CES = C to
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XPT TM 6V IGBT GenX3 TM w/diode (Electrically Isolated Tab) Preliminary Technical Information MMIXXN6B3H S = 6V = 7A (sat).7v t fi(typ) = ns Extreme Light Punch Through IGBT for -3kHz Switching Symbol
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More informationIXYL40N250CV1 V CES. High Voltage XPT TM IGBT w/ Diode = 2500V I C110. = 40A V CE(sat) 4.0V = 134ns. t fi(typ) Advance Technical Information
High Voltage XPT TM IGBT w/ Diode Advance Technical Information IXYLN2CV1 S = 2V 11 = A (sat).v = 13ns t fi(typ) (Electrically Isolated Tab) ISOPLUS i-pak TM Symbol Test Conditions Maximum Ratings S =
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Preliminary Technical Information 12V XPT TM IGBT GenX3 TM High-Speed IGBT for 2- khz Switching IXYHN12C3 S = 12V 11 = A (sat).v t fi(typ) = 38ns Symbol Test Conditions Maximum Ratings S = 2 C to 17 C
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V XPT TM GenX3 TM IGBTs High-Speed IGBT for - khz Switching IXYANC3HV IXYPNC3 IXYHNC3 S 11 = V = A (sat) 3.V = 1ns t fi(typ) TO-3HV (IXYA) Symbol Test Conditions Maximum Ratings S = C to 17 C V V CGR =
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XPT TM V GenX TM w/ Sonic Diode (Electrically Isolated Tab) Extreme Light Punch Through IGBT for -khz Switching IXXRNBH S = V = 7A (sat).v = ns t fi(typ) ISOPLUS7 TM Symbol Test Conditions Maximum Ratings
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