IXXH80N65B4H1 V CES. XPT TM 650V IGBT GenX4 TM w/ Sonic Diode = 650V I C110. = 80A V CE(sat) 2.1V = 52ns. t fi(typ)

Transcription

1 XPT TM 5V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXHN5BH S = 5V = A (sat).v = 5ns t fi(typ) Symbol Test Conditions Maximum Ratings S = 5 C to 75 C 5 V V CGR = 5 C to 75 C, R GE = M 5 V V GES Continuous ± V V GEM Transient ±3 V 5 = 5 C (Chip Capability) A = C A I F = C A M = 5 C, ms 3 A SSOA V GE = 5V, T VJ = 5 C, R G = 3 M = A (RBSOA) Clamped Inductive S t sc V GE = 5V, = 3V, = 5 C μs (SCSOA) R G =, Non Repetitive P C = 5 C 5 W C M 75 C T stg C T L Maximum Lead Temperature for Soldering 3 C T SOLD. mm (.in.) from Case for s C M d Mounting Torque.3/ Nm/lb.in. Weight g TO-7 AD G C E Tab G = Gate C = Collector E = Emitter Tab = Collector Features Optimized for 5-3kHz Switching Square RBSOA Anti-Parallel Sonic Diode Short Circuit Capability International Standard Package Advantages High Power Density Extremely Rugged Low Gate Drive Requirement Applications Symbol Test Conditions Characteristic Values ( = 5 C, Unless Otherwise Specified) Min. Typ. Max. BS = 5 A, V GE = V 5 V V GE(th) = 5 A, = V GE..5 V ES = S, V = V 5 A GE = 5 C ma I GES = V, V GE = V na (sat) = A, V GE = 5V, Note.5. V = 5 C. V Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts IXYS CORPORATION, All Rights Reserved DS5C(9/)

2 IXXHN5BH Symbol Test Conditions Characteristic Values ( = 5 C Unless Otherwise Specified) Min. Typ. Max. g fs = A, = V, Note 5 S C ies 3 pf C oes = 5V, V GE = V, f = MHz 395 pf C res 5 pf Q g(on) nc Q ge = A, V GE = 5V, =.5 S 3 nc Q gc nc t d(on) ns t ri Inductive load, = 5 C 3 ns = A, V GE = 5V. mj t d(off) = V, R G = 3 ns t fi Note 5 ns. mj t d(on) 3 ns t ri Inductive load, = 5 C ns = A, V GE = 5V 5. mj t d(off) = V, R G = 3 5 ns t fi Note ns 3. mj R thjc. C/W R thcs. C/W TO-7 (IXXH) Outline - Gate, - Collector 3 - Emitter Reverse Sonic Diode (FRD) Symbol Test Conditions Characteristic Values ( = 5 C Unless Otherwise Specified) Min. Typ. Max. V F I F = 5A, V GE = V, Note.5 V = 5 C. V I RM I = 5 C 5 A F = 5A, V GE = V, -di F /dt = 9A/μs, t rr V = 5 C 5 ns R = 3V R thjc.5 C/W Notes:. Pulse test, t 3μs, duty cycle, d %.. Switching times & energy losses may increase for higher (clamp), or R G. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered,35,59,93, 5,9,9 5,37,,,5,,5 B,3,3,77,55 7,5,73 B 7,57,33B by one or more of the following U.S. patents:,,7 5,7,5 5,3,37 5,3,5,59,3 B,53,33,7,5 B,759,9 7,3,975 B,, 5,3,79 5,7,7 5,,75,3,7 B,53,55,7,3,77,7 B 7,7,537

3 IXXHN5BH Fig.. Output = 5ºC V GE = 5V 3V V V V 9V Fig.. Extended Output = 5ºC V GE = 5V V 3V V V V V 5 9V V 7V Fig. 3. Output = 5ºC V GE = 5V V 3V V V V 9V V 7V V VCE(sat) - Normalized V GE = 5V Fig.. Dependence of (sat) on = A = A = A Degrees Centigrade 7V.5 Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage Fig.. Input Admittance. = 5ºC VCE - Volts = A = - ºC 5ºC = 5ºC V GE - Volts A A V GE - Volts IXYS CORPORATION, All Rights Reserved

4 IXXHN5BH 5 = V Fig. 7. Transconductance = - ºC = 35V = A Fig.. Gate Charge 5ºC I G = ma g f s - Siemens 3 5ºC VGE - Volts Amperes Q G - NanoCoulombs, Fig. 9. Capacitance Fig.. Reverse-Bias Safe Operating Area Capacitance - PicoFarads, f = MHz C ies Coes Cres = 5ºC R G = 3Ω dv / dt < V / ns Fig.. Maximum Transient Thermal Impedance Z(th)JC - K / W Pulse Width - Second IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

5 IXXHN5BH.5 Fig.. Inductive Switching Energy Loss vs. Gate Resistance. Fig. 3. Inductive Switching Energy Loss vs. Collector Current. = 5ºC, V GE = 5V = V 3. = V Eoff - MilliJoules = A - MilliJoules Eoff - MilliJoules.5..5 = 5ºC MilliJoules = A. = 5ºC R G - Ohms Amperes 3. Fig.. Inductive Switching Energy Loss vs. Fig. 5. Inductive Turn-off Switching Times vs. Gate Resistance t f i t d(off) = 5ºC, V GE = 5V 5. = V = V Eoff - MilliJoules.... = A = A MilliJoules t f i - Nanoseconds 9 = A = A 3 t d(off) - Nanoseconds Degrees Centigrade R G - Ohms Fig.. Inductive Turn-off Switching Times vs. Collector Current Fig. 7. Inductive Turn-off Switching Times vs. t f i t d(off) t f i t d(off) t f i - Nanoseconds = V = 5ºC = 5ºC t d(off) - Nanoseconds t f i - Nanoseconds = V = A, A t d(off) - Nanoseconds Amperes Degrees Centigrade IXYS CORPORATION, All Rights Reserved

6 IXXHN5BH Fig.. Inductive Turn-on Switching Times vs. Gate Resistance Fig. 9. Inductive Turn-on Switching Times vs. Collector Current t r i - Nanoseconds 5 9 t r i t d(on) = 5ºC, V GE = 5V = V = A t d(on) - Nanoseconds t r i - Nanoseconds t r i t d(on) = V = 5ºC = 5ºC t d(on) - Nanoseconds 3 = A R G - Ohms Amperes Fig.. Inductive Turn-on Switching Times vs. 3 t r i t d(on) 3 = V t r i - Nanoseconds = A = A t d(on) - Nanoseconds Degrees Centigrade IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

7 IXXHN5BH Fig.. Typ. Forward characteristics Fig.. Typ. Reverse Recovery Charge Q rr vs. -di F /dt T VJ = 5ºC T VJ = 5ºC T VJ = 5ºC V R = 3V I F = A I F Q RM 5A [A] [µc] 5A V F - [V] -di F / dt [A/µs] Fig. 3. Typ. Peak Reverse Current I RM vs. -di F /dt Fig.. Typ. Recovery Time t rr vs. -di F /dt 35 7 T VJ = 5ºC V R = 3V I F = A 3 I F = A T VJ = 5ºC V R = 3V 5A 5 5A I RM [A] 5 5A t rr [ns] 5A 5 3 di F /dt [A/µs] 5 -di F /dt [A/µs] Fig. 5. Typ. Recovery Energy E rec vs. -di F /dt Fig.. Maximum Transient Thermal Impedance. T VJ = 5ºC V R = 3V. I F = A. E rec. [mj] 5A Z(th)JC - ºC / W.. 5A.. -di F /dt [A/µs]..... Pulse Width - Seconds IXYS CORPORATION, All Rights Reserved IXYS REF: IXX_N5B(E7-RZ3) 9--