IXTT76P10THV IXTA76P10T IXTP76P10T IXTH76P10T
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1 TrenchP TM Power MOFET P-Channel Enhancement Mode Avalanche Rated IXTT76P1THV IXTA76P1T IXTP76P1T IXTH76P1T ymbol Test Conditions Maximum Ratings V = 25 C to 15 C - 1 V V R = 25 C to 15 C, R = 1M - 1 V Continuous 15 V M Transient 25 V I 25 = 25 C - 76 A I M = 25 C, Pulse Width Limited by M - 23 A I A = 25 C - 38 A E A = 25 C 1 J P = 25 C 298 W C M 15 C T stg C T L Maximum Lead Temperature for oldering 3 C T OL 1.6 mm (.62in.) from Case for 1s 26 C M d Mounting Torque (TO-22 & TO-7) 1.13 /1 Nm/lb.in. Weight TO g TO g TO-268HV 4. g TO-7 6. g V = - 1V I 25 = - 76A R (on) 25m TO-268HV (IXTT) TO-263 AA (IXTA) TO-22AB (IXTP) TO-7 (IXTH) Features (Tab) = ate = rain = ource Tab = rain International tandard Packages Avalanche Rated Extended FBOA Fast Intrinsic iode Low R (ON) and Q (Tab) (Tab) (Tab) Advantages ymbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise pecified) Min. Typ. Max. BV = V, I = - 25 A -1 V (th) V =, I = - 25 A V I = 15V, V = V 1 na I V = V, = V - 15 A = 125 C - 75 A R (on) = -1V, I =.5 I 25, Note 1 25 m Easy to Mount pace avings Applications High-ide witching Push Pull Amplifiers C Choppers Automatic Test Equipment Current Regulators Battery Charger Applications 217 IXY CORPORATION, All Rights Reserved 1C(9/15)
2 ymbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise pecified) Min. Typ. Max. g fs V = -1V, I =.5 I 25, Note C iss 13.7 nf C oss = V, V = - 25V, f = 1MHz 89 pf C rss 275 pf t d(on) 25 ns Resistive witching Times t r 4 ns V t = -1V, V =.5 V, I =.5 I 25 d(off) 52 ns R t = 1 (External) f 2 ns Q g(on) 197 nc Q gs = -1V, V =.5 V, I =.5 I nc Q gd 65 nc R thjc.42 C/W R thc TO-22.5 C/W TO-7.21 C/W IXTT76P1THV IXTA76P1T IXTP76P1T IXTH76P1T ource-rain iode ymbol Test Conditions Characteristic Values ( = 25 C, Unless Otherwise pecified) Min. Typ. Max. I = V - 76 A I M Repetitive, Pulse Width Limited by M - 34 A V I F = - 38A, = V, Note V t rr I 7 ns F = - 38A, -di/dt = -1A/ s Q RM V 215 nc I R = - 5V, = V RM - 6 A Note 1: Pulse test, t 3 s, duty cycle, d 2%. IXY Reserves The Right to Change Limits, Test Conditions, and imensions. IXY MOFETs and IBTs are covered 4,835,592 4,931,844 5,49,961 5,237,481 6,162,665 6,44,65 B1 6,683,344 6,727,585 7,5,734 B2 7,157,338B2 by one or more of the following U.. patents: 4,86,72 5,17,58 5,63,37 5,381,25 6,259,123 B1 6,534,343 6,71,45 B2 6,759,692 7,63,975 B2 4,881,16 5,34,796 5,187,117 5,486,715 6,36,728 B1 6,583,55 6,71,463 6,771,478 B2 7,71,537
3 IXTT76P1THV IXTA76P1T IXTP76P1T IXTH76P1T -8 Fig. 1. Output = 25 o C -28 Fig. 2. Extended Output = 25 o C -7 = -1V - 9V - 8V - = -1V - 9V - 8V -6-7V V V V -1-5V -4-5V Fig. 3. Output = -1V - 9V - 8V - 7V - 6V - 5V R(on) - Normalized Fig. 4. R (on) Normalized to I = - 38A Value vs. Junction Temperature = -1V I = - 76A I = - 38A egrees Centigrade 2.2 Fig. 5. R (on) Normalized to I = - 38A Value vs. rain Current -9 Fig. 6. Maximum rain Current vs. Case Temperature 2. = -1V -8-7 R(on) - Normalized = 25 o C I - Amperes egrees Centigrade 217 IXY CORPORATION, All Rights Reserved
4 IXTT76P1THV IXTA76P1T IXTP76P1T IXTH76P1T V = -1V Fig. 7. Input Admittance 1 8 V = -1V Fig. 8. Transconductance = - 4 o C o C - 4 o C g f s - iemens o C 125 o C Volts I - Amperes Fig. 9. Forward Voltage rop of Intrinsic iode -1 Fig. 1. ate Charge V = - 5V I = - 38A I = -1mA I - Amperes = 25 o C V - Volts V - Volts Q - NanoCoulombs 1, f = 1 MHz Fig. 11. Capacitance -1, Fig. 12. Forward-Bias afe Operating Area Capacitance - PicoFarads 1, 1, Ciss Coss -1-1 R (on) Limit = 15 o C 1ms 1ms C 1ms 1µs 25µs Crss = 25 o C ingle Pulse IXY Reserves The Right to Change Limits, Test Conditions, and imensions.
5 IXTT76P1THV IXTA76P1T IXTP76P1T IXTH76P1T 44 Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature 44 Fig. 14. Resistive Turn-on Rise Time vs. rain Current 4 R = 1Ω, = -1V 4 V = - 5V t r - Nanoseconds I = - 38A t r - Nanoseconds R = 1Ω, = -1V V = - 5V = 25 o C I = - 76A egrees Centigrade I - Amperes 2 Fig. 15. Resistive Turn-on witching Times vs. ate Resistance 11 Fig. 16. Resistive Turn-off witching Times vs. Junction Temperature 75 t r - Nanoseconds t r t d(on), = -1V V = - 5V I = - 76A, - 38A t d(on) - Nanoseconds t f - Nanoseconds t f t d(off) R = 1Ω, = -1V V = - 5V I = - 76A I = - 38A t d(off) - Nanoseconds R - Ohms egrees Centigrade Fig. 17. Resistive Turn-off witching Times vs. rain Current 66 2 Fig. 18. Resistive Turn-off witching Times vs. ate Resistance t f t d(off) R = 1Ω, = -1V V = - 5V t f t d(off), = -1V V = - 5V t f - Nanoseconds , 25 o C t d(off) - Nanoseconds t f - Nanoseconds I = - 38A, - 76A t d(off) - Nanoseconds I - Amperes R - Ohms 217 IXY CORPORATION, All Rights Reserved
6 IXTT76P1THV IXTA76P1T IXTP76P1T IXTH76P1T Fig. 19. Maximum Transient Thermal Impedance 1.1 Z(th)JC - K / W Pulse Width - econds IXY Reserves The Right to Change Limits, Test Conditions, and imensions. IXY REF: T_76P1T(A6) A
7 IXTT76P1THV IXTA76P1T IXTP76P1T IXTH76P1T TO-268HV Outline PIN: 1 - ate 2 - ource 3 - rain TO-263 Outline TO-22 Outline TO-7 Outline A A2 E B A R Q 2 P L1 1 = ate 2 = rain 3 = ource 4 = rain A1 C L b b2 b4 e C E1 1 - ate 2,4 - rain 3 - ource Pins: 1 - ate 2 - rain 3 - ource 217 IXY CORPORATION, All Rights Reserved
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High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor Preliminary Technical Information V CES = 3V 11 = 11A V CE(sat) 3.2V C1 C2 (Electrically Isolated Tab) G1 E1C3 G2 E2C G3 G E3E C1 C2
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XPT TM 65V IGBT GenX TM w/ Sonic Diode Extreme Light Punch Through IGBT for 5-3 khz Switching IXXH6N65BH V CES = 65V = 6A V CE(sat) 2.2V = 3ns t fi(typ) TO-27 Symbol Test Conditions Maximum Ratings V CES
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High Voltage, High Gain BIMOSFET TM Monolithic Bipolar MOS Transistor IXBT24N17 IXBH24N17 S 11 = 1 = 24A (sat) 2. TO-26 (IXBT) Symbol Test Conditions Maximum Ratings S = 25 C to 15 C 17 V V CGR = 25 C
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High Voltage XPT TM IGBT w/ Diode Preliminary Technical Information IXYX5N5CV1 IXYX5N5CV1HV S 11 = 5V = 5A (sat).v = ns t fi(typ) PLUS7 (IXYX) Symbol Test Conditions Maximum Ratings S = 5 C to 175 C 5
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GenX3 TM V IGBT High Speed PT IGBT for -khz Switching IXGHNC3 V CES = V 11 = A V CE(sat) V t fi (typ) = 5ns Symbol Test Conditions Maximum Ratings V CES = 25 C to 15 C V V CGR = 25 C to 15 C, R GE = 1MΩ
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V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYHNC3D S = V 9 = A (sat).v t fi(typ) = 38ns Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
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V XPT TM IGBT GenX3 TM w/ Diode High-Speed IGBT for - khz Switching IXYBNC3H S = V = A (sat) 3.V = 93ns t fi(typ) PLUS TM Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = M V
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GenX TM V IGBT w/diode Ultra Low Vsat PT IGBT for up to khz switching IXGH8NAD S = V = 8A (sat).v TO-7 AD Symbol Test Conditions Maximum Ratings S = C to C V V CGR = C to C, R GE = MΩ V V GES Continuous
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